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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Defect states in nc-Si:H films investigated by surface photovoltage spectroscopy

Hydrogenated nanocrystalline silicon (nc-Si:H) is a multiphase, heterogeneous material, composed of Si nanocrystals embedded in an amorphous matrix. It has been intensively studied recently due to very promising photovoltaic and optoelectronics applications. The present paper aims to study electronic transitions in nc-Si:H grown by Low Energy Plasma Enhanced Chemical Vapor Deposition by Surface Photovoltage Spectroscopy. The study of several thin films grown at different conditions and the comparison with recently published computational studies allowed us to advance a hypothesis on the defect structure responsible for electronic transitions in nc-Si:H.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Thermal stability of amorphous GaN{sub 1-x}As{sub x} alloys

GaN{sub 1-x}As{sub x} alloys grown across the composition range by low temperature molecular beam epitaxy have great technological potential for photovoltaic applications owing to their strong absorption coefficient and wide tunability of band gap and band edges. We found that amorphous GaN{sub 1-x}As{sub x} alloys that are formed for the compositions x, in the range of x{approx}0.3-0.7 are stable up to 700 deg. C. This is surprising since growth of GaN{sub 1-x}As{sub x} above 400 deg. C results in phase segregation. At annealing temperatures higher than 700 deg. C the alloy phase segregates into GaAs:N and GaN:As. The relative size of the nanocrystals depends on the initial film composition and annealing conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness

One order larger photovoltage is obtained with critical thicknesses of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} films in both kinds of heterostructures of La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/SrTiO{sub 3} (0.8 wt % Nb-doped) and La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/Si fabricated at various oxygen pressures. Our self-consistent calculation reveals that the critical thickness of the La{sub 0.9}Sr{sub 0.1}MnO{sub 3} film with the ultimate value of photovoltage is just the thickness of the depletion layer of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} in both heterojunctions, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Solution processable organic polymers and small molecules for bulk-heterojunction solar cells: A review

Solution processed bulk heterojunction (BHJ) organic solar cells (OSCs) have gained wide interest in past few years and are established as one of the leading next generation photovoltaic technologies for low cost power production. Power conversion efficiencies up to 6% and 6.5% have been reported in the literature for single layer and tandem solar cells, respectively using conjugated polymers. A recent record efficiency about 8.13% with active area of 1.13 cm{sup 2} has been reported. However Solution processable small molecules have been widely applied for photovoltaic (PV) devices in recent years because they show strong absorption properties, and they can be easily purified and deposited onto flexible substrates at low cost. Introducing different donor and acceptor groups to construct donor--acceptor (D--A) structure small molecules has proved to be an efficient way to improve the properties of organic solar cells (OSCs). The power conversion efficiency about 4.4 % has been reported for OSCs based on the small molecules. This review deals with the recent progress of solution processable D--A structure small molecules and discusses the key factors affecting the properties of OSCs based on D--A structure small molecules: sunlight absorption, charge transport and the energy level of the molecules.

14 SOLAR ENERGY↗
DOE OSTI2011

Bilayer Polymer Solar Cells with Improved Power Conversion Efficiency and Enhanced Spectrum Coverage

We demonstrate the construction of an efficient bilayer polymer solar cell comprising of Poly(3-hexylthiophene)(P3HT) as a p-type semiconductor and asymmetric fullerene (C{sub 70}) as n-type counterparts. The bilayer configuration was very efficient compared to the individual layer performance and it behaved like a regular p-n junction device. The photovoltaic characteristic of the bilayers were studied under AM 1.5 solar radiation and the optimized device parameters are the following: Voc = 0.5V, Jsc = 10.1 mA/cm{sup 2}, FF = 0.60 and power conversion efficiency of 3.6 %. A high fill factor of {approx}0.6 was achieved, which is only slightly reduced at very intense illumination. Balanced mobility between p-and n-layers is achieved which is essential for achieving high device performance. Correlation between the crystallinity, morphology and the transport properties of the active layers is established. The External quantum efficiency (EQE) spectral distribution of the bilayer devices with different processing solvents correlates well with the trends of short circuit current densities (J{sub sc}) measured under illumination. Efficiency of the bilayer devices with rough P3HT layer was found to be about 3 times higher than those with a planar P3HT surface. Hence it is desirable to have a larger grains with a rough surface of P3HT layer for providing larger interfacial area for the exciton dissociation.

14 SOLAR ENERGY↗
DOE OSTI2014

Multi-bit quantum random number generation by measuring positions of arrival photons

We report upon the realization of a novel multi-bit optical quantum random number generator by continuously measuring the arrival positions of photon emitted from a LED using MCP-based WSA photon counting imaging detector. A spatial encoding method is proposed to extract multi-bits random number from the position coordinates of each detected photon. The randomness of bits sequence relies on the intrinsic randomness of the quantum physical processes of photonic emission and subsequent photoelectric conversion. A prototype has been built and the random bit generation rate could reach 8 Mbit/s, with random bit generation efficiency of 16 bits per detected photon. FPGA implementation of Huffman coding is proposed to reduce the bias of raw extracted random bits. The random numbers passed all tests for physical random number generator.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2019

Probing energy landscapes in multilayer heterostructures: Challenges and opportunities

Quantitative characterization of energy landscapes at buried interfaces is essential for assessing their functionality. This perspective highlights recent developments in reconstructing internal potential profiles based on hard x-ray photoemission experiments that have proved to be a rich source of information. We show that band-edge profiles can be reconstructed from core-level photoelectron spectra by performing a comprehensive search for the best-fit set of associated layer-resolved spectra. The use of hard x-rays allows heterostructures to be probed over length scales comparable to relevant electronic screening lengths.Significantly,this information takes our understanding of such systems to a new level that is not currently achievable using any other experimental technique.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Improved lifetime of a high spin polarization superlattice photocathode

Negative Electron Affinity (NEA) activated surfaces are required to extract highly spin-polarized electron beams from GaAs-based photocathodes, but they suffer extreme sensitivity to poor vacuum conditions that results in rapid degradation of quantum efficiency. We report on a series of unconventional NEA activations on surfaces of bulk GaAs with Cs, Sb, and O 2 using different methods of oxygen exposure for optimizing photocathode performance. Additionally, one order of magnitude improvement in lifetime with respect to the standard Cs–O 2 activation is achieved without significant loss of electron spin polarization and quantum efficiency by codepositing Cs, Sb, and O 2 . A strained GaAs/GaAsP superlattice sample activated with the codeposition method demonstrated similar enhancement in lifetime near the photoemission threshold while maintaining 90% spin polarization.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires

We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial n-type GaAs/Al{sub x}Ga{sub 1 –x}As (x = 0.3) nanowires (NWs) grown by molecular beam epitaxy on a p-type silicon substrate. Results revealed a significant decrease in the time of NW photoresponse recovery as compared to that in a bulk crystal upon the transition of EL2 centers from a metastable nonactive state to the normal ground state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Continuous Energy Photon Transport Implementation in MCATK

The Monte Carlo Application ToolKit (MCATK) code development team has implemented Monte Carlo photon transport into the MCATK software suite. The current particle transport capabilities in MCATK, which process the tracking and collision physics, have been extended to enable tracking of photons using the same continuous energy approximation. We describe the four photoatomic processes implemented, which are coherent scattering, incoherent scattering, pair-production, and photoelectric absorption. The accompanying background, implementation, and verification of these processes will be presented.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2016

SU-G-TeP3-13: The Role of Nanoscale Energy Deposition in the Development of Gold Nanoparticle-Enhanced Radiotherapy

Purpose: Gold nanoparticles (GNPs) can enhance radiotherapy effects. The high photoelectric cross section of gold relative to tissue, particularly at lower energies, leads to localized dose enhancement. However in a clinical context, photon energies must also be sufficient to reach a target volume at a given depth. These properties must be balanced to optimize such a therapy. Given that nanoscale energy deposition patterns around GNPs play a role in determining biological outcomes, in this work we seek to establish their role in this optimization process. Methods: The PENELOPE Monte Carlo code was used to generate spherical dose deposition kernels in 1000 nm diameter spheres around 50 nm diameter GNPs in response to monoenergetic photons incident on the GNP. Induced “lesions” were estimated by either a local effect model (LEM) or a mean dose model (MDM). The ratio of these estimates was examined for a range of photon energies (10 keV to 2 MeV), for three sets of linear-quadratic parameters. Results: The models produce distinct differences in expected lesion values, the lower the alpha-beta ratio, the greater the difference. The ratio of expected lesion values remained constant within 5% for energies of 40 keV and above across all parameter sets and rose to a difference of 35% for lower energies only for the lowest alpha-beta ratio. Conclusion: Consistent with other work, these calculations suggest nanoscale energy deposition patterns matter in predicting biological response to GNP-enhanced radiotherapy. However the ratio of expected lesions between the different models is largely independent of energy, indicating that GNP-enhanced radiotherapy scenarios can be optimized in photon energy without consideration of the nanoscale patterns. Special attention may be warranted for energies of 20 keV or below and low alpha-beta ratios.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2024

Halogenated Dibenzo[ f , h ]quinoxaline Units Constructed 2D‐Conjugated Guest Acceptors for 19% Efficiency Organic Solar Cells

Abstract Halogenation of Y‐series small‐molecule acceptors (Y‐SMAs) is identified as an effective strategy to optimize photoelectric properties for achieving improved power‐conversion‐efficiencies (PCEs) in binary organic solar cells (OSCs). However, the effect of different halogenation in the 2D‐structured large π‐fused core of guest Y‐SMAs on ternary OSCs has not yet been systematically studied. Herein, four 2D‐conjugated Y‐SMAs (X‐QTP‐4F, including halogen‐free H‐QTP‐4F, chlorinated Cl‐QTP‐4F, brominated Br‐QTP‐4F, and iodinated I‐QTP‐4F) by attaching different halogens into 2D‐conjugation extended dibenzo[ f , h ]quinoxaline core are developed. Among these X‐QTP‐4F, Cl‐QTP‐4F has a higher absorption coefficient, optimized molecular crystallinity and packing, suitable cascade energy levels, and complementary absorption with PM6:L8‐BO host. Moreover, among ternary PM6:L8‐BO:X‐QTP‐4F blends, PM6:L8‐BO:Cl‐QTP‐4F obtains a more uniform and size‐suitable fibrillary network morphology, improved molecular crystallinity and packing, as well as optimized vertical phase distribution, thus boosting charge generation, transport, extraction, and suppressing energy loss of OSCs. Consequently, the PM6:L8‐BO:Cl‐QTP‐4F‐based OSCs achieve a 19.0% efficiency, which is among the state‐of‐the‐art OSCs based on 2D‐conjugated Y‐SMAs and superior to these devices based on PM6:L8‐BO host (17.70%) and with guests of H‐QTP‐4F (18.23%), Br‐QTP‐4F (18.39%), and I‐QTP‐4F (17.62%). The work indicates that halogenation in 2D‐structured dibenzo[ f , h ]quinoxaline core of Y‐SMAs guests is a promising strategy to gain efficient ternary OSCs.

14 SOLAR ENERGY↗
DOE OSTI2016

Effects of europium substitution for In on structure and photoelectric properties of CuIn{sub 1−x}Eu{sub x}Te{sub 2}

The structures and optical and electric properties of europium doped CuIn{sub 1−x}Eu{sub x}Te{sub 2} have been studied systematically using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive spectrum (EDS), ultraviolet and visible spectrophotometer (UV–vis), and standard four-probe method. The studies reveal that the minor europium doping into CuIn{sub 1−x}Eu{sub x}Te{sub 2} could still stabilize the chalcopyrite structure in a solid solution of x=0.1. The lattice parameters are going up with increasing the content of europium in CuIn{sub 1−x}Eu{sub x}Te{sub 2} due to the size effect at In site. The structural refinement confirms that Eu partly substitutes for In and occupies the 4b crystal position. SEM morphologies show that the europium doping into CuIn{sub 1−x}Eu{sub x}Te{sub 2} can fine the grains from the largely agglomerated state to the uniformly separated state. The electrical resistivities of single phase CuIn{sub 1−x}Eu{sub x}Te{sub 2} follow a mixture model of hopping conductivity and variable range hopping conductivity. The absorption band-gaps of CuIn{sub 1−x}Eu{sub x}Te{sub 2} at room temperature tend to increase with increasing Eu content. CuIn{sub 1−x}Eu{sub x}Te{sub 2} might be a good candidate for photovoltaic cell. - Graphical abstract: CuIn{sub 0.9}Eu{sub 0.1}Te{sub 2} follows a mixture of hopping conductivity and variable range hopping conductivity mechanism. - Highlights: • Novel europium doped CuIn{sub 1−x}Eu{sub x}Te{sub 2}. • Potential application for devices and solar cells. • A mixture of hopping and variable range hopping conductivity mechanism.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity

We report an improved photosensitivity in few-layer tin disulfide (SnS 2 ) field-effect transistors(FETs) following doping with CdSe/ZnS core/shell quantum dots(QDs). The hybrid QD-SnS 2 FET devices achieve more than 500% increase in the photocurrent response compared with the starting SnS 2 -only FET device and a spectral responsivity reaching over 650 A/W at 400 nm wavelength. The negligible electrical conductance in a control QD-only FET device suggests that the energy transfer between QDs and SnS 2 is the main mechanism responsible for the sensitization effect, which is consistent with the strong spectral overlap between QDphotoluminescence and SnS 2 optical absorption as well as the large nominal donor-acceptor interspacing between QD core and SnS 2 . Furthermore, we also find enhanced charge carrier mobility in hybrid QD-SnS 2 FETs which we attribute to a reduced contact Schottky barrier width due to an elevated background charge carrier density.

36 MATERIALS SCIENCE↗