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At least 163 records · Page 9

High Broadband Spectral Resolving Transition-Edge Sensors for High Count-Rate Astrophysical Applications

We are developing arrays of transition-edge sensor (TES) X-ray detectors optimized for high count-rate solar astronomy applications where characterizing the high velocity motions of X-ray jets in solar flares is of particular interest. These devices are fabricated on thick Si substrates and consist of 35x35micron^2 TESs with 4.5micron thick, 60micron pitch, electroplated absorbers. We have tested devices fabricated with different geometric stem contact areas with the TES and surrounding substrate area, which allows us to investigate the loss of athermal phonons to the substrate. Results show a correlation between the stem contact area and a non-Gaussian broadening in the spectral line shape consistent with athermal phonon loss. When the contact area is minimized we have obtained remarkable board-band spectral resolving capabilities of 1.3 plus or minus 0.leV at an energy of 1.5 keV, 1.6 plus or minus 0.1 eV at 5.9 keV and 2.0 plus or minus 0.1 eV at 8 keV. This, coupled with a capability of accommodating 100's of counts per second per pixel makes these devices an exciting prospect of future x-ray astronomy applications.

Smith, Stephen↗

Searches for light dark matter using condensed matter systems

Identifying the nature of dark matter (DM) has long been a pressing question for particle physics. In the face of ever-more-powerful exclusions and null results from large-exposure searches for TeV-scale DM interacting with nuclei, a significant amount of attention has shifted to lighter (sub-GeV) DM candidates. Direct detection of the light DM in our galaxy by observing DM scattering off a target system requires new approaches compared to prior searches. Lighter DM particles have less available kinetic energy, and achieving a kinematic match between DM and the target mandates the proper treatment of collective excitations in condensed matter systems, such as charged quasiparticles or phonons. In this context, the condensed matter physics of the target material is crucial, necessitating an interdisciplinary approach. In this review, we provide a self-contained introduction to direct detection of keV–GeV DM with condensed matter systems. We give a brief survey of DM models and basics of condensed matter, while the bulk of the review deals with the theoretical treatment of DM-nucleon and DM-electron interactions. Here, we also review recent experimental developments in detector technology, and conclude with an outlook for the field of sub-GeV DM detection over the next decade.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Temperature-dependent optical properties of Cd(1-x),Zn(x),Te substitute material

In this study, we report cryogenic optical properties of Cd(l-x), Zn(x), Te wafers that are used as substrate seed layers in the manufacturing of HgCdTe focal-plane array detectors. These studies are motivated by the fact that the substrate optical properties influence the overall detector performance. The studies consist of measuring the substrate frequency dependent transmittance T(W) and reflectance R(W) above and below the optical band-gap in the UV/Visible and infrared frequency ranges, and with temperature variation of the sample from 5 to 300 K. Determination of the optical absorption from these measurements show that the optical absorption energy gap near 1.6 eV shows a substantial increase as the temperature is reduced from 300 to 5 K. Furthermore, we observe the presence of infrared-active optical phonons whose peak frequency shifts as the temperature of the sample is varied over the measured temperature range. The theoretical frequency dependent optical conductivity, with allowance for redistribution of spectral weight among the interband transition charge carriers, will be discussed.

Quijada, Manuel A.↗

Hyper-Raman spectroscopy of CeO 2

Cerium dioxide (CeO 2 ) belongs to the fluorite structure group (Oh 5 point group) resulting in one Raman active T 2g mode and two IR active T 1u TO and LO modes. The T 2g Raman band in CeO 2 has been used to probe the symmetric Ce-O vibrational mode of different sized nanoparticulates. Far infrared studies of the Ce-O interactions are difficult to conduct due to low optical transmission, efficiency of the detector and water absorption bands interfering with the measurements. The selection rules of hyper-Raman spectroscopy (HRS) allow the study of IR bands in the far infrared spectral region, such as the motion of the Ce atoms. For the first time, HRS was used to investigate the T 1u TO and LO IR modes in CeO 2 . The position and full-width half-maximum (FWHM) of the TO and LO bands in the HRS spectrum were used to investigate the spectral response in relation to particle size (i.e., phonon confinement). The investigation of CeO2 with HRS provides a research platform for future work in the study of ThO 2 , UO 2 and PuO 2 IR modes.

74 ATOMIC AND MOLECULAR PHYSICS↗

Performing spectroscopic and specific heat studies of improper ferroelectrics

The results of infrared measurements on Ni-Br, Cu-Cl, and Fe-I boracite improper ferroelectrics and far infrared measurements of Ni-Br boracite are presented. The boracites have the general formula X3B7O3Y, where X = divalent metal and Y = halogen. They undergo a first order phase transition from a high temperature paraelectric phase with cubic symmetry to a ferroelectric phase with orthorhombic symmetry. The boracites are "improper ferroelectrics" since the spontaneous polarization is not the primary order parameter in the cubic-orthorhombic phase transition. Current understanding of these materials is that the primary order parameter is associated with a doubly degenerate zone-boundary phonon in the cubic phase. The degenerate critical modes become homogeneous and split into the A sub 1 and A sub 2 modes in the orthorhombic phase, doubling the volume of the primitive cell. An harmonic coupling between the softing A sub 1 and a low frequency A sub 1 optic mode induces a spontaneous polarization as a secondary effect in the ferroelectric phase. This secondary non-critical nature of the ferroelectric mode earns these materials the "improper" title and is responsible for their unique properties and high figure of merit in detector use.

Coleman, L. B.↗

Observation of Long-Lived UV-Induced Fluorescence from Environmental Materials Using the HVeV Detector as Developed for SuperCDMS

Here, we describe recent experiments using a SuperCDMS HVeV single-charge sensitive detector illuminated with an ultraviolet LED (275 nm) and a monochromatic laser(650 nm) using a dual fiber optic system installed in a small dilution refrigerator at Stanford University. We observed a population of fluorescence background events after UV exposure but not after exposure to the laser source. The fluorescence was likely due to scattered UV photons absorbed outside the detector. We discuss the possibility of fluorescence being a contributor to the low energy excess background observed in above-ground Dark Matter experiments.

36 MATERIALS SCIENCE↗

Optical Strain Sensing for Particle Detection

Optomechanical strain sensing provides attractive opportunities for novel particle detection schemes, as well as studying stress-induced (i.e. non-radiogenic) phonon bursts, which have been demonstrated to limit the coherence times of superconducting qubits and are a suspected culprit in the low energy excesses observed by many dark matter direct detection experiments. We are investigating SiN microring optical resonator strain sensors, developed at Purdue University, for applications in fundamental particle sensing and QIS. These sensors can be embedded in the substrate upon which superconducting qubits are patterned, providing a handle to distinguish decoherence events of radiogenic origin from those due to crystal stress. In a similar way, these sensors can be operated in conjunction with superconducting detectors (e.g., MKIDs, TES) to enable multi-channel readout of particle interactions in the device substrate or serve as anticoincidence detectors, which may be required to ident ify low-energy interactions from dark matter particles down to the fermionic thermal relic mass limit of a few keV. Such sensors can potentially be used to directly observe resonant scattering processes of gamma rays (and perhaps neutrinos) where no detectable quanta are produced in the target, via the microscopic stress induced by the momentum transfer to the (fixed-in-place) crystal lattice as a whole. These strain sensors have so far found application in photonics and communications, but have yet to be adopted for HEP uses, where they can provide unique capabilities in the search for dark matter as well as understanding and improving the coherence times of superconducting qubits.

43 PARTICLE ACCELERATORS↗

Integrated Electron-tunneling Refrigerator and TES Bolometer for Millimeter Wave Astronomy

We describe progress in the development of a close-packed array of bolometers intended for use in photometric applications at millimeter wavelengths from ground- based telescopes. Each bolometer in the may uses a proximity-effect Transition Edge Sensor (TES) sensing element and each will have integrated Normal-Insulator-Superconductor (NIS) refrigerators to cool the bolometer below the ambient bath temperature. The NIS refrigerators and acoustic-phonon-mode-isolated bolometers are fabricated on silicon. The radiation-absorbing element is mechanically suspended by four legs, whose dimensions are used to control and optimize the thermal conductance of the bolometer. Using the technology developed at NIST, we fabricate NIS refrigerators at the base of each of the suspension legs. The NIS refrigerators remove hot electrons by quantum-mechanical tunneling and are expected to cool the biased (approx.10 pW) bolometers to <170 mK while the bolometers are inside a pumped 3He-cooled cryostat operating at approx.280 mK. This significantly lower temperature at the bolometer allows the detectors to approach background-limited performance despite the simple cryogenic system.

Silverberg, R. F.↗

Development of the Nano-HEB Array for Low-Background Far-IR Applications

We present an overview of the recent progress made in the development of a far-IR array of ultrasensitive hot-electronnanobolometers (nano-HEB) made from thin titanium (Ti) films. We studied electrical noise, signal and noisebandwidth, single-photon detection, optical noise equivalent power (NEP), and a microwave SQUID (MSQUID) basedfrequency domain multiplexing (FDM) scheme. The obtained results demonstrate the very low electrical NEP down to1.5x10-(sup 2)? W/Hz(sup 1)/(sup 2) at 50 mK determined by the dominating phonon noise. The NEP increases with temperature as ~ T(sup 3)reaching ~ 10-(sup 1)? W/Hz(sup 1)/(sup 2) at the device critical temperature TC = 330-360 mK. Optical NEP = 8.6x10-(sup 1)? W/Hz(sup 1)/(sup 2) at 357mK and 1.4x10-(sup 1)? W/Hz(sup 1)/(sup 2) at 100 mK respectively, agree with thermal and electrical data. The optical couplingefficiency provided by a planar antenna was greater than 50%. Single 8-?m photons have been detected for the first timeusing a nano-HEB operating at 50-200 mK thus demonstrating a potential of these detectors for future photon-countingapplications in mid-IR and far-IR. In order to accommodate the relatively high detector speed (~ ?s at 300 mK, ~ 100 ?sat 100 mK), an MSQUID based FDM multiplexed readout with GHz carrier frequencies has been built. Both the readoutnoise ~ 2 pA/Hz(sup 1)/(sup 2) and the bandwidth > 150 kHz are suitable for nano-HEB detectors.

single-photon↗

Controlling T c of iridium films using the proximity effect

A superconducting Transition-Edge Sensor (TES) with low-$T_c$ is essential in a high resolution calorimetric detection. With a motivation of developing sensitive calorimeters for applications in cryogenic neutrinoless double beta decay searches, we have been investigating methods to reduce the $T_c$ of an Ir film down to 20 mK. Utilizing the proximity effect between a superconductor and a normal metal, we found two room temperature fabrication recipes of making Ir-based low-$T_c$ films. In the first approach, an Ir film sandwiched between two Au films, a Au/Ir/Au trilayer, has a tunable $T_c$ in the range of 20-100 mK depending on the relative thicknesses. In the second approach, a paramagnetic Pt thin film is used to create Ir/Pt bilayer with a tunable $T_c$ in the same range. We present detailed study of fabrication and characterization of Ir-based low-$T_c$ films, and compare the experimental results to theoretical models. We show that Ir-based films with predictable and reproducible critical temperature can be consistently fabricated for use in large scale detector applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optical Strain Sensing for HEP and QIS

Optomechanical strain sensing provides attractive opportunities for novel particle detection schemes, as well as studying stress-induced (i.e. non-radiogenic) phonon bursts, which have been demonstrated to limit the coherence times of superconducting qubits [1,2] and are a suspected culprit in the low energy excesses observed by many dark matter direct detection experiments [3,4]. We are investigating SiN microring optical resonator strain sensors, developed at Purdue University [5], for applications in fundamental particle sensing and QIS. These sensors can be embedded in the substrate upon which superconducting qubits are patterned, providing a handle to distinguish decoherence events of radiogenic origin from those due to crystal stress. In a similar way, these sensors can be operated in conjunction with superconducting detectors (e.g., MKIDs, TES) to enable multi-channel readout of particle interactions in the device substrate or serve as anticoincidence detectors, which may be r equired to identify low-energy interactions from dark matter particles down to the fermionic thermal relic mass limit of a few keV. Such sensors can also be used to directly observe resonant scattering processes of gamma rays (and perhaps neutrinos) where no detectable quanta are produced in the target, via the microscopic strain induced by the momentum transfer to the (fixed-in-place) crystal lattice as a whole. These strain sensors have so far found application in photonics and communications, but have yet to be adopted for HEP uses, where they can provide unique capabilities in the search for dark matter, observing neutrino interactions, and improving the coherence times of superconducting qubits.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Evaluation of composite bolometers at 0.4 Kelvin

Composite bolometer structures have provided the most sensitive IR detectors for operation at helium-4 temperatures of 1.5K. Below 1.5K the electrical and thermal properties change significantly and the performance characteristics cannot be accurately extrapolated for composite bolometers at helium-3 temperatures of 0.4K. The paper deals with experimentally assessed performance of composite bolometers at 0.4K. It is found that sensitivity estimates derived from electrical or load curve properties can overestimate the responsivity to radiation by several orders of magnitude depending upon a particular material behavior. For many near-millimeter applications background power levels are several nanowatts and the associated photon noise plus Johnson and phonon noise components impose a fundamental detection limit of about 5 x 10 to the -15thW/Hz to the -1/2. We have successfully fabricated composite bolometers which at 0.4 K and millimeter wavelengths achieve a noise equivalent power of 7 x 10 to the -15thW/Hz to the -1/2 coupled with a large absorbing area (0.3 sq cm) and a fast response time (2 msec.).

El-Ataway, S.↗

Physics and design of advanced IR bolometers and photoconductors

The state-of-the-art in photoconductors and bolometers is reviewed, centering on the materials development and concepts of extrinsic Si and Ge devices. It is suggested that in the field of 2-D detector arrays the hybrid circuits containing a photoconductor or a photodiode array, bonded with In solder to a switched MOS readout device with up to 60 x 60 elements, will produce superior performance. Other systems discussed include charge-coupled devices, developed for visible-light imaging and adapted to IR imaging, and charge-injection devices, a monolithic combination of a standard photoconductor and a metal-insulator-semiconductor capacitor. Finally, it is pointed out that a nonequilibrium theory of bolometer noise demonstrates the possibility of reducing the traditionally accepted noise limits by 60 percent for Johnson noise and 30 percent for the noise from phonons in the thermal link of the bolometer.

Haller, E. E.↗

Non-Markovian Hole Excess Noise in Avalanche Amorphous Selenium Thin Films

Enhancing the signal-to-noise ratio in avalanche photodiodes by utilizing impact ionization gain requires materials exhibiting low excess noise factors. Amorphous selenium (a-Se) as a wide bandgap at ~2.1 eV, a solid-state avalanche layer, demonstrates single-carrier hole impact ionization gain and manifests ultralow thermal generation rates. A comprehensive study of the history dependent and non-Markovian nature of hot hole transport in a-Se was modeled using a Monte Carlo (MC) random walk of single hole free flights, interrupted by instantaneous phonon, disorder, hole–dipole, and impact-ionization scattering interactions. The hole excess noise factors were simulated for 0.1–15 μm a-Se thin-films as a function of mean avalanche gain. The hole excess noise factors in a-Se decreases with an increase in electric field, impact ionization gain, and device thickness. The history dependent nature of branching of holes is explained using a Gaussian avalanche threshold distance distribution and the dead space distance, which increases determinism in the stochastic impact ionization process. An ultralow non-Markovian excess noise factor of ~1 was simulated for 100 nm a-Se thin films corresponding to avalanche gains of 1000. Future detector designs can utilize the nonlocal/non-Markovian nature of the hole avalanche in a-Se, to enable a true solid-state photomultiplier with noiseless gain.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗

Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

A model for charge trapping and impact ionization, and an experiment to measure these parameters is presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also describe. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Warming nuclear pasta with dark matter: kinetic and annihilation heating of neutron star crusts

Neutron stars serve as excellent next-generation thermal detectors of dark matter, heated by the scattering and annihilation of dark matter accelerated to relativistic speeds in their deep gravitational wells. However, the dynamics of neutron star cores are uncertain, making it difficult at present to unequivocally compute dark matter scattering in this region. On the other hand, the physics of an outer layer of the neutron star, the crust, is more robustly understood. We show that dark matter scattering solely with the low-density crust still kinetically heats neutron stars to infrared temperatures detectable by forthcoming telescopes. We find that for both spin-independent and spin-dependent scattering on nucleons, the crust-only cross section sensitivity is 10 -43 - 10 -41 cm 2 for dark matter masses of 100 MeV - 1 PeV, with the best sensitivity arising from dark matter scattering with a crust constituent called nuclear pasta (including gnocchi, spaghetti, and lasagna phases). For dark matter masses from 10 eV to 1 MeV, the sensitivity is 10 -39 - 10 -34 cm 2 , arising from exciting collective phonon modes in a neutron superfluid in the inner crust. Furthermore, for any s-wave or p-wave annihilating dark matter, we show that dark matter will efficiently annihilate by thermalizing just with the neutron star crust, regardless of whether the dark matter ever scatters with the neutron star core. This implies efficient annihilation in neutron stars for any electroweakly interacting dark matter with inelastic mass splittings of up to 200 MeV, including Higgsinos. We conclude that neutron star crusts play a key role in dark matter scattering and annihilation in neutron stars.

79 ASTRONOMY AND ASTROPHYSICS↗

Factors influencing quantum evaporation of helium from polar semiconductors from first principles

While there is much indirect evidence for the existence of dark matter (DM), to date it has evaded detection. Current efforts focus on DM masses over ~GeV—to push the sensitivity of DM searches to lower masses, new DM targets and detection schemes are needed. In this work, we focus on the latter—a novel detection scheme recently proposed to detect 10–100 meV phonons in polar target materials. Previous work showed that well-motivated models of DM can interact with polar semiconductors to produce an athermal population of phonons. This new sensing scheme proposes that these phonons then facilitate quantum evaporation of 3 He from a van der Waals film deposited on the target material. However, a fundamental understanding of the underlying process is still unclear, with several uncertainties related to the precise rate of evaporation and how it can be controlled. In this work, we use ab initio density functional theory calculations to compare the adsorption energies of helium atoms on a polar target material, sodium iodide, to understand the underlying evaporation physics. We explore the role of surface termination, monolayer coverage, and elemental species on the rate of He evaporation from the target material. Using this, we discuss the optimal target features for He-evaporation experiments and their range of tunability through chemical and physical modifications such as applied field and surface termination.

36 MATERIALS SCIENCE↗