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At least 163 records · Page 9

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NASA NTRS1981

XPS study of interface formation of CVD SiO2 on InSb

The interfacial chemistry of CVD SiO2 films deposited on thin native oxides grown on InSb substrates is examined using X-ray photoemission spectroscopy (XPS) and a relatively benign chemical etching technique for depth profiling. An intensity analysis of XPS spectra is used to derive the compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system. Peak positions in these spectra are used to follow the change in substrate surface potential during the etch sequence, and to establish the chemical nature of the species formed during deposition and subsequent processing. Reaction of the substrate with oxygen resulted in an In-rich native oxide and 1-2 monolayers of excess elemental Sb at the native-oxide/substrate interface, incompletely oxidized silane reduced the native oxide, leaving less than 1 monolayer of elemental In at the SiO2/native oxide interface. Etch removal of this thin In-rich layer leads to a change in the substrate surface potential of 0.06 eV, corresponding to a net increase in positive charge. The results are consistent with simple thermodynamic considerations; they are also compared to previously reported studies of deposited dielectrics on III-V compound semiconductors.

Vasquez, R. P.↗

NASA NTRS1981

Potentials of surfaces in space

The subject of surface potentials on natural and artificial bodies in space is reviewed with particular emphasis on recent developments. Following a brief survey of work done up to the early 1970s on the charging of astrophysical objects in interstellar and interplanetary space and spacecraft charging, the various charging mechanisms in space are examined, including the collection of plasma particles, photoemission, and secondary electron emission by electron impact and ion impact, and the effects on charging of nonisotropic plasmas, wakes, and environmental magnetic and electric fields are considered. The concept of equilibrium potential is discussed, along with differential charging, potential barriers and discharge processes. The measurement of spacecraft potentials is then considered, and recent work on spacecraft potential modification and control by active and passive means is presented. Finally, astrophysical applications where charging effects may be important are discussed, and areas for further work are indicated.

Whipple, E. C.↗

NASA NTRS1982

Chemical bonding and charge redistribution - Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems

Via a systematic study of the correlation between the core and valence level X-ray photoemission spectra, the nature of the chemical bonding and charge redistribution for bulk transition metal silicides has been examined. Particular emphasis is placed on Pt2Si and PtSi. It is observed that the strength of the metal (d)-silicon (p) interaction increases in the order Ni2Si, Pd2Si, Pt2Si. It is also observed that both the metal and silicon core lines shift to higher binding energy as the silicides are formed. The notion of charge redistribution for metallic bonds is invoked to explain these data.

Grunthaner, P. J.↗

NASA NTRS1983

Oxygen atom reaction with shuttle materials at orbital altitudes

Significant effects of the environment on payload bay materials observed on all flights are discussed. The STS 5 experiment is described. Increased outgassing rates resulting in possible localized effects on experiments, changes in optical control surfaces, and photoemission from reaction products are considered.

Leger, L. J.↗

NASA NTRS1983

An XPS study of silicon/noble metal interfaces - Bonding trends and correlations with the Schottky barrier heights

This X-ray photoemission (XPS) study demonstrates a correlation of intrinsic TM-Si chemical bond formation with Schottky barrier heights for the near-noble transition metals (TM = Ni, Pd, Pt) and their corresponding silicides (TM2Si and TMSi) on Si(100). It is found that the barrier height correlates with the strength of the TM-Si orbital interaction as well as with the charge density around the Si atom. These observations suggest a dominant role for intrinsic chemical interactions in establishing the Schottky barrier heights in these TM-Si systems.

Grunthaner, P. J.↗

NASA NTRS1983

Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy

Ploog (1980) and Bachrach and Krusor (1981) have pointed out the importance of substrate preparation and surface cleaning for obtaining high quality films with the aid of molecular beam epitaxial growth techniques. In the present investigation, high resolution X-ray photoemission (XPS) is used to determine the oxide removal mechanism for GaAs(100) substrates which have undergone a standardized cleaning procedure. Other objectives of the investigation are related to a comparison of different cleaning procedures in order to minimize carbon contamination, the extension of these cleaning techniques to other III-V compound semiconductors such as InSb, and the evaluation of the sensitivity of the compositional results to electron-induced damage effects.

Vasquez, R. P.↗

NASA NTRS1983

Optical detectors for spectroscopy

The modes of operation of photoconductive and photoemissive array detectors are described, and their performance characteristics compared and contrasted, with emphasis on their suitability for use as detectors for optical spectroscopy. The prospects for future developments of the array detectors are discussed.

Timothy, J. G.↗

NASA NTRS1984

NiNO - A model for NO on a metal surface

Two different mechanisms for the bonding of NO to Ni have been found; the first is for a linear geometry and involves a 3d-pi(asterisk) bond and has a short Ni-N bond length. The second mechanism, the more weakly bound, involves a Ni4s-N2p bond in a bent structure. The relationship of these two stages to NO chemisorbed on metals is discussed. For both mechanisms, there are no open shell electrons on NO, consistent with the fact that multiplet splitting is not definitely observed in the photoemission spectra of adsorbed NO.

Bauschlicher, C. W., Jr.↗

NASA NTRS1985

New adatom model for Si(11) 7X7 and Si(111)Ge 5X5 reconstructed surfaces

A new adatom model differing from the conventional model by a reconstruction of the substrate is proposed. The new adatom structure provides an explanation for the 7x7 and 5x5 size of the unit cells seen on annealed Si(111) and Si(111)-Ge surfaces, respectively. The model is consistent with structural information from vacuum-tunneling microscopy. It also provides simple explanations for stacking-fault-type features expected from Rutherford backscattering experiments and for similarities in the LEED and photoemission spectra of 2x1 and 7x7 surfaces.

Chadi, D. J.↗

NASA NTRS1985

Aluminum work function: Effect of oxidation, mechanical scraping and ion bombardment

Surface studies have been performed on aluminum polycrystalline surfaces which have been mechanically scraped. Such studies were initiated in order to understand surface effects occurring in tribological processes which involve rubbing surfaces and the effects of adsorption of oxygen. To characterize the surfaces, the following three different experimental approaches have been used: (1) X.P.S. (X-ray photoelectron spectroscopy), in order to check the cleanliness of the surfaces and follow the adsorption and oxidation kinetics; (2) Analysis of the work function changes by following the energy spectra of secondary electrons emitted under low energy electron bombardment; and (3) Analysis of photoemission intensities under U.V. excitation. The reference state being chosen to be the surface cleaned by ion bombardment and exposures to oxygen atmospheres have been shown to lower the work function of clean polycrystalline aluminum by 1.2 eV. The oxygen pressure is found to affect only the kinetics of these experiments. Mechanical scraping has been shown to induce a decrease ( 0.3 eV) in the work function, which could sharply modify the kinetics of adsorption on the surface.

Vinet, P.↗

NASA NTRS1985

Size and shape dependence of CO adsorption sites on sapphire supported Fe microcrystals

The surface structure and stoichiometry of alumina substrates, as well as the size, growth characteristics, and shape of Fe deposits on sapphire substrates have been investigated by low energy electron diffraction (LEED), Auger electron spectroscopy, electron energy loss spectroscopy, and X-ray photoemission spectroscopy (XPS), as well as work function measurements, in conjunction with transition electron microscopy observations. The substrates used in this work were the following: (1) new, clean Al2O3; (2) same surface amorphized by Ar ion bombardment; (3) same surface regenerated by 650 C annealing; (4) amorphous alumina films on Ta slab; and (5) polycrystal alumina films, obtained by heating amorphous films to 600 C. Substrate cleaning was found to be most effective in producing a reproducible surface upon oxygen RF plasma treatment. The Fe nucleation and growth process was found to depend strongly on the type of substrate surface and deposition conditions. Ar ion bombardment under beam flooding, and subsequent annealing at 650 C was found an effective means to restore the original Al2O3 (1102) surface for renewed Fe deposition.

Papageorgopoulos, C.↗

NASA NTRS1984

Electronic and chemical structure of metal-silicon interfaces

This paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using X-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.

Grunthaner, P. J.↗

NASA NTRS1985

Photoenhanced thermal oxidation of InP

The growth rate of laser-photoenhanced thermally grown native oxides of InP in a N2O ambient and its dependence on growth condition are presented. Increased laser power, substrate temperature, and N2O pressure are observed to increase the growth rate. The topography and the composition of these oxides have been studied using secondary electron microscopy and X-ray photoemission spectroscopy, respectively. The oxide layers contain In2O3 and a phosphate, probably InPO4. The enhanced growth appears to be caused by both excited oxidizing species and a photon-enhanced surface reaction.

Fathipour, M.↗

NASA NTRS1985

Chemistry of MOS-LSI radiation hardening

The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.

Grunthaner, P.↗

NASA NTRS1984

The nature of chemisorbed oxygen on Ni(100) and Cu(100)

Model calculations indicate two low-lying states for the interaction of O with Ni and Cu(100). The oxide state is approximately 1 eV more stable and its R(perpendicular) for Ni(100) is consistent with the experimental value for Ni(100), indicating only one type of stable chemisorption bond. This agrees with XPS (X-ray photoemission spectroscopy) and EXAFS (extended X-ray absorption fine structure) data for the observed LEED (low energy electron diffraction) structures. Interpretations of EELS (electron energy loss spectroscopy) data in terms of a radical state forthe p(2x2) and the oxide state for the c(2x2) structure must be seriously questioned.

Bauschlicher, C. W., Jr.↗

NASA NTRS1986

Sputtering and native oxide formation on (110) surfaces of Cd(1-x)Mn(x)Te

Native oxides on the surface of Cd(1-x)Mn(x)Te (X between 0 and 0.7) have been analyzed on the basis of X-ray photoemission spectroscopy measurements. Depth profile analysis revealed a significant increase in the thickness at higher Mn concentrations and a strong Mn segregation to the surface, respectively. Sputter-induced damage on cleaved (110)-oriented surfaces was analyzed by photoreflectance and photoluminescence measurements. The damage was found to be larger on CdTe than on the alloy. Thermal annealing showed nearly complete restoration for the surface of the alloy, while CdTe revealed irreversible modifications in the near-surface regime upon sputtering and post annealing.

Neff, H.↗

NASA NTRS1985

High speed photography, videography, and photonics III; Proceedings of the Meeting, San Diego, CA, August 22, 23, 1985

Papers are presented on the picosecond electronic framing camera, photogrammetric techniques using high-speed cineradiography, picosecond semiconductor lasers for characterizing high-speed image shutters, the measurement of dynamic strain by high-speed moire photography, the fast framing camera with independent frame adjustments, design considerations for a data recording system, and nanosecond optical shutters. Consideration is given to boundary-layer transition detectors, holographic imaging, laser holographic interferometry in wind tunnels, heterodyne holographic interferometry, a multispectral video imaging and analysis system, a gated intensified camera, a charge-injection-device profile camera, a gated silicon-intensified-target streak tube and nanosecond-gated photoemissive shutter tubes. Topics discussed include high time-space resolved photography of lasers, time-resolved X-ray spectrographic instrumentation for laser studies, a time-resolving X-ray spectrometer, a femtosecond streak camera, streak tubes and cameras, and a short pulse X-ray diagnostic development facility.

Ponseggi, B. G.↗

NASA NTRS1987

The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

X-ray photoemission spectroscopy has been used to examine the localization and crystallographic dependence of Si(+), Si(2+), and Si(3+) suboxide states at the SiO2/Si interface for (100)and (111)-oriented substrates with gate oxide quality thermal oxides. The Si(+) and Si(2+) states are localized within 6-10 A of the interface while the Si(3+) state extends about 30 A into the bulk SiO2. The distribution of Si(+) and Si(2+) states shows a strong crystallographic dependence with Si(2+) dominating on (100) substrates and Si(+) dominating on (111) substrates. This crystallographic dependence is anticipated from consideration of ideal unreconstructed (100) and (111) Si surfaces, suggesting that (1) the Si(+) and Si(2+) states are localized immediately within the first monolayer at the interface and (2) the first few monolayers of substrate Si atoms are not significantly displaced from the bulk. The total number of suboxide states observed at the SiO2/Si interface corresponds to 94 and 83 percent of a monolayer for these (100) and (111) substrates, respectively.

Grunthaner, P. J.↗