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At least 163 records · Page 9

Carrier gradients and the role of charge selective contacts in lateral heterojunction all back contact perovskite solar cells

Realizing photovoltaic devices that achieve the full potential of the metal halide perovskite material will require improved insight regarding the role of selective contacts and how key interfaces operate when mobile defects are present. However, measuring interface properties in typical device stacks where the perovskite layer is thin and sandwiched between two contacts has been a challenge. Here, we fabricate p-i-n and p-n lateral heterojunctions with nickel oxide/titanium oxide all back contacts, permitting us to employ a comprehensive analysis approach, including ultraviolet and X-ray photoemission spectroscopy (UPS/XPS), angle-resolved X-ray absorption spectroscopy (XAS), Kelvin probe force microscopy (KPFM), surface photovoltage (SPV), hyperspectral imaging (HSI), and time-resolved fluorescence lifetime imaging microscopy (TR-FLIM) to discern the role of selective contacts. Specifically, we tune the selectivity of the contacts, changing the gradient in the carrier concentration across the surface of the active layer, which is connected to carrier extraction at the buried interface, and thus the device functionality.

25 ENERGY STORAGE↗

CsV 3 Sb 5 : A $\mathbb{Z}_2$ Topological Kagome Metal with a Superconducting Ground State

Recently discovered alongside its sister compounds KV 3 Sb 5 and RbV 3 Sb 5 , CsV 3 Sb 5 crystallizes with an ideal kagome network of vanadium and antimonene layers separated by alkali metal ions. This work presents the electronic properties of CsV 3 Sb 5 , demonstrating bulk superconductivity in single crystals with a T c = 2.5 K. The normal state electronic structure is studied via angle-resolved photoemission spectroscopy and density-functional theory, which categorize CsV 3 Sb 5 as a Z 2 topological metal. Multiple protected Dirac crossings are predicted in close proximity to the Fermi level (E F ), and signatures of normal state correlation effects are also suggested by a high-temperature charge density wavelike instability. Finally, the implications for the formation of unconventional superconductivity in this material are discussed.

36 MATERIALS SCIENCE↗

Mapping out the emergence of topological features in the highly alloyed topological Kondo insulators Sm 1-$x$ M $x$ B 6 ( M =Eu, Ce)

SmB 6 is a strongly correlated material that has been attributed as a topological insulator and a Kondo insulator. Recent studies have found the topological surface states and low temperature insulating character to be profoundly robust against magnetic and nonmagnetic impurities. Here, we use angle resolved photoemission spectroscopy to chart the evolution of topologically linked electronic structure features versus magnetic doping and temperature in Sm 1-$x$ M $x$ B 6 ( M =Eu, Ce). Topological coherence phenomena are observed out to ~30% Eu and 50% Ce concentrations that represent extreme nominal hole and electron doping, respectively. Finally, theoretical analysis reveals that a recent redesignation of the topologically inverted band symmetries provides a natural route to reconciling the persistence of topological surface state emergence even as the insulating gap is lost through decoherence.

36 MATERIALS SCIENCE↗

Nematic superconductivity in LiFeAs

The role of nematic order for the mechanism of high-temperature superconductivity is highly debated. In most iron-based superconductors (IBSs) the tetragonal symmetry is broken already in the normal state, resulting in orthorhombic lattice distortions, static stripe magnetic order, or both. Superconductivity then emerges, at least at weak doping, already from the state with broken C 4 rotational symmetry. One of the few stoichiometric IBSs, lithium iron arsenide superconducts below 18 K and does not display either structural or magnetic transition in the normal state. Here we demonstrate, using angle-resolved photoemission spectroscopy, that even the superconducting state in LiFeAs is also a nematic one. We observe spontaneous breaking of the rotational symmetry in the gap amplitude on all Fermi surfaces, as well as unidirectional distortion of the Fermi pockets. Remarkably, these deformations are hardly visible above superconducting T c . Our results demonstrate the realization of the phenomenon of superconductivity-induced nematicity in IBSs, emphasizing the intimate relation between them. Furthermore, we suggest a theoretical explanation based on the emergence of a secondary instability inside the superconducting state, which leads to the nematic order and s–d mixing in the gap function.

36 MATERIALS SCIENCE↗

Electronic structure and magnetic and transport properties of antiferromagnetic Weyl semimetal GdAlSi

Here we report the topological electronic structure, magnetic, and magnetotransport properties of a noncentrosymmetric compound GdAlSi. Magnetic susceptibility shows an antiferromagnetic transition at TN = 32 K. In-plane isothermal magnetization exhibits an unusual hysteresis behavior at higher magnetic field, rather than near zero field. Moreover, the hysteresis behavior is asymmetric under positive and negative magnetic fields. First-principles calculations were performed on various magnetic configurations, revealing that the antiferromagnetic state is the ground state, and the spiral antiferromagnetic state is a close competing state. The calculations also reveal that GdAlSi hosts multiple Weyl points near the Fermi energy. The band structure measured by angle-resolved photoemission spectroscopy (ARPES) shows relatively good agreement with the theory, with the possibility of Weyl nodes slightly above the Fermi energy. Within the magnetic ordered state, we observe an exceptionally large anomalous Hall conductivity (AHC) of ~ 1310 Ω-1cm-1 at 2 K. Interestingly, the anomalous Hall effect persists up to room temperature with a significant value of AHC (~ 155 Ω-1cm-1). Our analysis indicates that the large AHC originates from the Berry curvature associated with the multiple pairs of Weyl points near Fermi energy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Multiband Fermi surface in $1T–$$\mathrm{VSe_2}$ and its implication for the charge density wave phase

Angle-resolved photoemission spectroscopy experiments reveal a surprisingly richer surface electronic structure in $1T–$$\mathrm{VSe_2}$ than previously predicted or probed. Earlier claims supporting a charge density wave phase in this material are reexamined in terms of these findings and are found to be untenable. Here, the Fermi surface is found to be gapless, while band warping effects, currently attributed to three-dimensional lattice distortion, result from the simultaneous dispersion of the closely lying multiple bands. Based on these findings, a charge density wave scenario in $1T–$$\mathrm{VSe_2}$ is unlikely. On the other side, the presence of multiple states crossing the Fermi level should constitute relevant constraints for any viable microscopic model of the structural phase transition of $\mathrm{VSe_2}$.

36 MATERIALS SCIENCE↗

Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene

Abstract Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a controlled epitaxial growth of monolayer TaSe 2 with different structural phases, 1 H and 1 T , on a bilayer graphene (BLG) substrate using molecular beam epitaxy, and its impact on the electronic properties of the heterostructures using angle-resolved photoemission spectroscopy. 1 H -TaSe 2 exhibits significant charge transfer and band hybridization at the interface, whereas 1 T -TaSe 2 shows weak interactions with the substrate. The distinct interfacial interactions are attributed to the dual effects from the differences of the work functions as well as the relative interlayer distance between TaSe 2 films and BLG substrate. The method demonstrated here provides a viable route towards interface engineering in a variety of transition-metal dichalcogenides that can be applied to future nano-devices with designed electronic properties.

36 MATERIALS SCIENCE↗

Observation of momentum-dependent charge density wave gap in a layered antiferromagnet ${\textrm{Gd}}{\textrm{Te}}_{3}$

Charge density wave (CDW) ordering has been an important topic of study for a long time owing to its connection with other exotic phases such as superconductivity and magnetism. The RTe 3 (R = rare-earth elements) family of materials provides a fertile ground to study the dynamics of CDW in van der Waals layered materials, and the presence of magnetism in these materials allows to explore the interplay among CDW and long range magnetic ordering. Here, we have carried out a high-resolution angle-resolved photoemission spectroscopy (ARPES) study of a CDW material GdTe 3 , which is antiferromagnetic below ~ 12 K, along with thermodynamic, electrical transport, magnetic, and Raman measurements. Our ARPES data show a two-fold symmetric Fermi surface with both gapped and ungapped regions indicative of the partial nesting. The gap is momentum dependent, maximum along $\overline{Γ}$ - $\overline{Z}$ and gradually decreases going towards $\overline{Γ}$ - $\overline{Z}$. Our study provides a platform to study the dynamics of CDW and its interaction with other physical orders in two- and three dimensions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Flat-band-induced itinerant ferromagnetism in RbCo 2 Se 2

ACo 2 Se 2 (A=K,Rb,Cs) is a homologue of the iron-based superconductor, AFe 2 Se 2 . From a comprehensive study of RbCo 2 Se 2 via measurements of magnetization, transport, neutron diffraction, angle-resolved photoemission spectroscopy, and first-principle calculations, we identify a ferromagnetic order accompanied by an orbital-dependent spin-splitting of the electronic dispersions. However, we identify the ordered moment to be dominated by a d x 2 –y 2 flatband near the Fermi level, which exhibits the largest spin splitting across the ferromagnetic transition, suggesting an itinerant origin of the ferromagnetism. In the broader context of the iron-based superconductors, we find this d x 2 –y 2 flatband to be a common feature in the band structures of both iron chalcogenides and iron pnictides, accessible via heavy electron doping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Nernst power factor and figure of merit in the compensated semimetal ScSb

Recently, topological semimetals have emerged as strong candidates for solid-state thermomagnetic refrigerators due to their enhanced Nernst effect. This enhancement arises from the combined contributions of the Berry-curvature-induced anomalous Nernst coefficient associated with topological bands and the normal Nernst effect resulting from synergistic electron-hole compensation. Generally, these two effects are intertwined in topological semimetals, making it challenging to evaluate them independently. Here, we report the observation of a high Nernst effect in the electron-hole compensated semimetal ScSb with topologically trivial electronic band structures. Remarkably, we find a high maximum Nernst power factor of 𝑃⁢𝐹 𝑁 ∼ 35 × 10 −4 W m −1 K −2 in ScSb. The Nernst thermopower (𝑆 𝑥⁢𝑦 ) exhibits a peak of ∼ 47 µ⁢V/K at 12 K and 14 T, yielding a Nernst figure of merit (𝑧 𝑁 ) of ∼ 28 × 10 −4 K −1 . Notably, despite its trivial electronic band structure, both the 𝑃⁢𝐹 𝑁 and 𝑧 𝑁 values of ScSb are comparable to those observed in topological semimetals with Dirac band dispersions. In conclusion, the origin of the large Nernst signal in ScSb is explained by compensated electron and hole carriers, through Hall resistivity measurements, angle-resolved photoemission spectroscopy, and density functional theory calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Dimensional crossover and symmetry transformation of charge density waves in VSe 2

Collective phenomena in solids can be sensitive to the dimensionality of the system; a case of special interest is VSe 2 , which shows a (√7×√3) charge density wave (CDW) in the single layer with threefold symmetry in the normal phase spontaneously broken, in contrast to the (4×4) in-plane CDW in the bulk. Angle-resolved photoemission spectroscopy (ARPES) from VSe 2 ranging from a single layer to the bulk reveals the evolution of the electronic structure including the Fermi surface contours and the CDW gap. At a thickness of two layers, the ARPES maps are already nearly bulklike, but the transition temperature T C for the (4×4) CDW is much higher than the bulk value of 110 K. These results can be understood as due to dimensional crossover of phonon instability driven by a competition of nesting vectors. Here, in this letter, we provide key insights into the CDW mechanisms and offer a perspective in the search and control of emergent phases in quantum materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic transport mechanisms in a thin crystal of the Kitaev candidate α -RuCl 3 probed through guarded high impedance measurements

α-RuCl 3 is considered to be the top candidate material for the experimental realization of the celebrated Kitaev model, where ground states are quantum spin liquids with interesting fractionalized excitations. It is, however, known that additional interactions beyond the Kitaev model trigger in α-RuCl 3 a long-range zigzag antiferromagnetic ground state. In this work, we investigate a nanoflake of α-RuCl 3 through guarded high impedance measurements aimed at reaching the regime where the system turns into a zigzag antiferromagnet. We investigated a variety of temperatures (1.45–175 K) and out-of-plane magnetic fields (up to 11 T), finding a clear signature of a structural phase transition at ≈160 K as reported for thin crystals of α-RuCl 3 , as well as a thermally activated behavior at temperatures above ≈30 K, with a characteristic activation energy significantly smaller than the energy gap that we observe for α-RuCl 3 bulk crystals through our angle resolved photoemission spectroscopy (ARPES) experiments. Additionally, we found that below ≈30 K, transport is ruled by Efros–Shklovskii variable range hopping (VRH). Most importantly, our data show that below the magnetic ordering transition known for bulk α-RuCl 3 in the frame of the Kitaev–Heisenberg model (≈7 K), there is a clear deviation from VRH or thermal activation transport mechanisms. Finally, our work demonstrates the possibility of reaching, through specialized high impedance measurements, the thrilling ground states predicted for α-RuCl 3 at low temperatures in the frame of the Kitaev–Heisenberg model and informs about the transport mechanisms in this material in a wide temperature range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Band Structure and Charge Ordering of Dirac Semimetal EuAl 4 at Low Temperatures

In this article, EuAl 4 is proposed to host a topological Hall state. This material also undergoes four consecutive antiferromagnetic (AFM) transitions upon cooling below T N1 = 15.4 K in the presence of charge density wave (CDW) order that sets in below T CDW = 140 K. We use angle-resolved photoemission spectroscopy and density-functional-theory calculations to study how magnetic ordering affects the electronic properties in EuAl 4 . Here, we found changes in the band structure upon each of the four consecutive AFM transitions including band splitting, renormalizations, and appearance of new bands forming additional Fermi sheets. In addition we also found significant enhancement of the quasiparticles’ lifetime due to suppression of spin flip scattering, similar to what was previously reported for ferromagnetic EuCd 2 As 2 . Surprisingly, we observe that most significant changes in electronic properties occur not at T N1 , but instead at the AFM3 to AFM4 transition, which coincides with the largest drop in resistivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Emergence of two distinct phase transitions in monolayer CoSe2 on graphene

Abstract Dimensional modifications play a crucial role in various applications, especially in the context of device miniaturization, giving rise to novel quantum phenomena. The many-body dynamics induced by dimensional modifications, including electron-electron, electron-phonon, electron-magnon and electron-plasmon coupling, are known to significantly affect the atomic and electronic properties of the materials. By reducing the dimensionality of orthorhombic CoSe 2 and forming heterostructure with bilayer graphene using molecular beam epitaxy, we unveil the emergence of two types of phase transitions through angle-resolved photoemission spectroscopy and scanning tunneling microscopy measurements. We disclose that the 2 × 1 superstructure is associated with charge density wave induced by Fermi surface nesting, characterized by a transition temperature of 340 K. Additionally, another phase transition at temperature of 160 K based on temperature dependent gap evolution are observed with renormalized electronic structure induced by electron-boson coupling. These discoveries of the electronic and atomic modifications, influenced by electron-electron and electron-boson interactions, underscore that many-body physics play significant roles in understanding low-dimensional properties of non-van der Waals Co-chalcogenides and related heterostructures. Graphical Abstract

36 MATERIALS SCIENCE↗

In situ investigation of conducting interface formation in $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ heterostructure

The high-mobility conducting interface (CI) between LaAlO 3 (LAO) and SrTiO 3 (STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed a built-in potential (V bi ) proportional to the polar LAO thickness starting from the first unit cell (UC) with CI formation appearing above 3 UCs. However, we found that the V bi is removed by synchrotron ultraviolet (UV)-irradiation; The built-in potential is recovered by oxygen gas (O 2 (g))-exposure. Furthermore, after UV-irradiation, the CI appears even below 3UC of LAO. Here, our results demonstrate not only the V bi -driven CI formation in as-grown LAO/STO, but also a new route to control of the interface state by UV lithographic patterning or other surface modification.

36 MATERIALS SCIENCE↗

Ideal weak topological insulator and protected helical saddle points

Here we report the design and observation of an ideal weak topological insulator in a quasi-one-dimensional bismuth halide, Bi 4 I 1.2 Br 2.8 . Via angle-resolved photoemission spectroscopy, we identify that Bi 4 I 1.2 Br 2.8 hosts topological surface states on the (100)′ side surface in the form of two anisotropic π-offset Dirac cones while topologically dark on the (001) top surface. The results fully determine a unique side-surface Hamiltonian and thereby identify two pairs of nondegenerate helical saddle points. The fact that both the surface Dirac and helical saddle points are in the global bulk band gap of 195 meV suggests the potential of this system to be a fertile ground for topological many-body physics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic properties of single-layer CoO 2 /Au(111)

Here we report direct measurements via angle-resolved photoemission spectroscopy (ARPES) of the electronic dispersion of single-layer (SL) CoO 2 . The Fermi contour consists of a large hole pocket centered at the $\overline{\Gamma}$ point. To interpret the ARPES results, we use density functional theory (DFT) in combination with the multi-orbital Gutzwiller Approximation (DFT+GA), basing our calculations on crystalline structure parameters derived from x-ray photoelectron diffraction and low-energy electron diffraction. Our calculations are in good agreement with the measured dispersion. We conclude that the material is a moderately correlated metal. We also discuss substrate effects, and the influence of hydroxylation on the CoO 2 SL electronic structure.

36 MATERIALS SCIENCE↗

Temperature dependence of band shifts induced by impurity ionization in ZrTe 5

We report the topological phase transition in ZrTe 5 remains a challenge for its sensitivity to the structural parameters and carrier densities. One important issue is that the temperature dependence of the band shifts has been reported controversially. Using angle-resolved photoemission spectroscopy, we study the temperature evolution of the band structures of ZrTe 5 with samples prepared by chemical vapor transport and flux methods. We find two distinct types of band shift with temperature, one monotonically moving downward to high binding energies with the increase of temperature and another one moving downward first and then reversely upward. By assuming ZrTe 5 is a semiconductor with a limited amount of impurities, we analyze the temperature-induced ionization of the impurities and chemical potential shift to interpret the discrepant experimental observations. In this scenario, the discrepancies in band structures and the controversial results on temperature-dependent band shifts can be reconciled in a unified picture.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗