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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

X-ray spectroscopy with silicon pin and avalanche photo diodes

Results of an evaluation of silicon P-Intrinsic-N (PIN) photodiodes and Avalanche Photodiodes (APD) for the direct detection of soft x rays from 1 to 20 keV and for the detection of scintillation light output from CsI(TI) for higher x ray energies (30 to 1000 keV) are presented. About one keV resolution was achieved at room temperature for both the PIN and APD detectors for soft x rays (1 to 20 keV). Commercially available, low power (18 mV), low noise, hybrid preamplifiers, were used. These photodiodes were also coupled to CsI(TI) scintillator and obtained about 6 resolution at 662 keV. The photodiode frequency response matches well with the emission spectrum of the CsI(TI) scintillator providing good spectral resolution and a higher signal than NaI(TI) when viewed by conventional photomultipliers. A PIN-CsI(TI) combination provides a low energy threshold of around 60 keV while for the APD-CsI(TI) it is 15 keV.

Desai, U. D.↗
NASA NTRS2001

Evaluation of Forces on the Welding Probe of the Automated Retractable Pin-Tool (RPT)

The NASA invention entitled 'The Hydraulic Controlled Auto-Adjustable Pin Tool for Friction Stir Welding' (US Patent 5,893,507), better known as the Retractable Pin-Tool (RPT), has been instrumented with a load-detecting device allowing the forces placed on the welding probe to be measured. As the welding probe is plunged into the material, the forces placed on the probe can now be characterized. Of particular interest are those forces experienced as the welding probe comes within close proximity to the back-up anvil. For a given material, it is believed that unique forces are generated relative to the distance between the welding probe and the anvil. The forces have been measured and characterized for several materials, and correlations have been made between these forces and the pin's position relative to the backside of the weld material.

Ding, R. J.↗
NASA NTRS1999

Evaluation of Forces on the Welding Probe of the Retractable Pin-Tool (RPT)

NASA invention entitled, "The Hydraulic Controlled Auto-Adjustable Pin Tool for Friction Stir Welding" (U.S. Patent 5,893,5 07), better known as the Retractable Pin-Tool (RPT) has been instrumented with a load detecting devise allowing the forces placed upon the welding probe to be measured. As the welding probe is plunged into the material, the forces placed upon the probe can now be charactefized. Of particular interest are those forces experienced as the welding probe comes within close proximity to the back-up anvil. For a given material, it is believed that unique forces are generated relative to the distance between the welding probe and the anvil. The forces have been measured and characterized for several materials, and correlations have been made between these forces and the pin's position relative to the backside of the weld material.

Ding, R. Jeffrey↗
NASA NTRS2009

Pin Tool Geometry Effects in Friction Stir Welding

In friction stir welding (FSW) there is significant evidence that material can take one of two different flow paths when being displaced from its original position in front of the pin tool to its final position in the wake of the weld. The geometry of the pin tool, along with the process parameters, plays an important role in dictating the path that the material takes. Each flow path will impart a different thermomechanical history on the material, consequently altering the material microstructure and subsequent weld properties. The intention of this research is to isolate the effect that different pin tool attributes have on the flow paths imparted on the FSWed material. Based on published weld tool geometries, a variety of weld tools were fabricated and used to join AA2219. Results from the tensile properties and microstructural characterization will be presented.

Querin, J. A.↗
NASA NTRS2011

Implementation of Pin Point Landing Vision Components in an FPGA System

Pin-point landing is required to enable missions to land close, typically within 10 meters, to scientifically important targets in generally hazardous terrain. In Pin Point Landing both high accuracy and high speed estimation of position and orientation is needed to provide input to the control system to safely choose and navigate to a safe landing site. A proposed algorithm called VISion aided Inertial NAVigation (VISINAV) has shown that the accuracy requirements can be met. [2][3] VISINAV was shown in software only, and was expected to use FPGA enhancements in the future to improve the computational speed needed for pin point landing during Entry Descent and Landing (EDL). Homography, feature detection and spatial correlation are computationally intensive parts of VISINAV. Homography aligns the map image with the descent image so that small correlation windows can be used, and feature detection provides regions that spatial correlation can track from frame to frame in order to estimate vehicle motion. On MER the image Homography, Feature Detection and Correlation would take approximately 650ms tracking 75 features between frames. We implemented Homography, Feature detection and Correlation on a Virtex 4 LX160 FPGA to run in under 25ms while tracking 500 features to improve algorithm reliability and throughput.

aircraft landing guidance↗
NASA NTRS2016

Silicon Alignment Pins: An Easy Way to Realize a Wafer-To-Wafer Alignment

A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.

Jung-Kubiak, Cecile↗
DOE OSTI2025

Pre-Transient Characterization of MLOF-1 Test Pin

This study focuses on the pre-transient characterization of U-10Zr test and sibling fuel pins for the THOR-M-LOF test series. Using neutron radiography, element contact profilometry (ECP), precise gamma scan (PGS), and gas assay, sampling, and recharge (GASR) analysis, it was confirmed that the fuel pins were intact and suitable for testing. Key fuel behaviors quantified include axial elongation, diametral strain, fluff structure geometry, axial isotope distribution, and fission gas release. Any deviations from historically expected behaviors were investigated and attributed to factors other than the irradiation behavior of the fuel pin. These pre-transient measurements establish a baseline for future post-transient analysis, which will be used to inform fuel performance models and safety criteria for sodium-cooled fast reactors (SFRs). The results will enhance understanding of transient fuel behavior and expand limited data on LOF scenarios.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Disentangling Ferroelectric Wall Dynamics and Identification of Pinning Mechanisms via Deep Learning

Field-induced domain-wall dynamics in ferroelectric materials underpins multiple applications ranging from actuators to information technology devices and necessitates a quantitative description of the associated mechanisms including giant electromechanical couplings, controlled nonlinearities, or low coercive voltages. While the advances in dynamic piezoresponse force microscopy measurements over the last two decades have rendered visualization of polarization dynamics relatively straightforward, the associated insights into the local mechanisms have been elusive. This work explores the domain dynamics in model polycrystalline materials using a workflow combining deep-learning-based segmentation of the domain structures with nonlinear dimensionality reduction using multilayer rotationally invariant autoencoders (rVAE). The former allows unambiguous identification and classification of the ferroelectric and ferroelastic domain walls. Here, the rVAE discovers the latent representations of the domain wall geometries and their dynamics, consequently providing insight into the intrinsic mechanisms of polarization switching, that can further be compared to simple physical models. The rVAE disentangles the factors affecting the pinning efficiency of ferroelectric walls, offering insights into the correlation of ferroelastic wall distribution and ferroelectric wall pinning.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Material-dependent photon ionizing radiation effects in Si and GaAs PIN diodes: A numerical investigation

We present a finite-element drift-diffusion-Poisson model in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework to compare the radiation response of silicon (Si) and gallium arsenide (GaAs) PIN diodes under high-energy photon irradiation. The model solves coupled carrier continuity and Poisson’s equations with Shockley-Read-Hall recombination, and is verified against standard analytical J-V behavior. Using a simplified 1D geometry with ideal Ohmic contacts, we quantify device response under forward and reverse bias with a 100 MeV photon flux. Under forward bias, Si exhibits markedly greater radiation sensitivity than GaAs, including larger increases in current density, stronger local field and carrier-product perturbations, and higher recombination. Under reverse bias, GaAs shows larger radiation-induced photocurrent and broader current-density peaks near junctions, indicating an advantage for photodetection. Integrated steady-state recombination is consistently higher in Si across voltages. Under periodic photon pulses, GaAs produces higher-amplitude photoresponse and settles more rapidly than Si. These results highlight material-dependent trade-offs for radiation-tolerant, high-speed optoelectronics and provide guidance for selecting PIN architectures in aerospace, nuclear, and high-energy physics environments.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience in harsh environments. However, electric field crowding at the edge of the anode often limits its full potential, leading to single-event effects (SEEs) at lower bias voltages under heavy ion radiation. Here, in this work, we report on the performance of homojunction GaN vertical PiN diodes with a hybrid edge termination design under heavy ion irradiation, specifically, oxygen ions, chlorine ions, Cf-252 fission fragments, and alpha particles from an Am-241 source. The unique hybrid edge termination (HET) design provides better electric field management, preventing breakdown from occurring at the edge of the anode at lower voltages. The results of this study reveal that these devices exhibit excellent tolerance to 12-MeV oxygen and 16-MeV chlorine ions, owing to their low linear energy transfer (LET) and range in GaN. However, single-event burnout (SEB) is observed during the Cf-252 exposure at about 50% of the diodes' electrical breakdown voltage due to the presence of higher LET and longer-range ions. Optical and scanning electron microscopy (SEM) reveal that the damage that caused by SEB lies close to the center of these devices rather than the anode edge. Devices with junction termination extension (JTE) instead of HET edge termination also show similar SEB when irradiated with Cf-252 fission fragments. Physical damage due to SEB occurs at the edge of the anode for these devices. These comparative results show the benefits of HET for enhancing the resistance of GaN-based PiN diodes to heavy ion irradiation.

42 ENGINEERING↗
DOE OSTI2023

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R ON A ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R ON A is 0.23 mΩ∙ cm 2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm 2 . Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.

42 ENGINEERING↗
DOE OSTI2021

Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO 2 ) and 14-MeV fast neutrons up to a fluence of 2.2×10 13 cm -2 . Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose is shown to be suppressed by non-quasi-static effects during RF operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using TCAD simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites.

42 ENGINEERING↗
DOE OSTI2020

TEV-3349 "ATF-2 2A Loop Pin Cladding Requirements"

Industry partners, including Westinghouse, Framatome, General Electric, General Atomics, Toshiba, etc. require requirements for fuel pins they insert in the reactor for testing. This document contains those requirements. These requirements represent an agreement between ATR and NS&T, and include the requirements for pins fabricated at the INL. These include inspections such as radiography, helium leak check, etc.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS2024

On the Validity of the Tada Stress Intensity Factor Solution for the Single Edge Notch Tension Specimen With Pinned Ends

The validity of the Tada stress intensity factor (K Tada ) for pinned-ends single edge notch tension [SEN(T)] specimens is assessed via a combined experimental-modeling approach. Analysis of fatigue crack growth rate reductions during constant-∆K Tada loading demonstrates that specific combinations of alloy stiffness, geometry, and loading result in the true K deviating below K Tada . Geometrically non-linear, 3-dimensional finite element calculations confirm mild-to-strong influences of these parameters, which are not captured by K Tada . Most existing pinned SEN(T) data are found to use parameters where KTada is not significantly reduced, but the present results underscore the need for a more broadly applicable K solution.

Non-linear FEA↗
DOE OSTI2022

High performance high-power textured Mn/Cu-doped PIN-PMN-PT ceramics

Piezoelectric ceramics with combinatory soft and hard characteristics are highly desired for high-power applications. However, it remains grand challenge to achieve simultaneous presence of hard (e.g. high coercive field, E c ; high mechanical quality factor, Q m ) and soft (e.g. high piezoelectric constant, d; high electromechanical coupling factor, k) piezoelectric properties in piezoelectric ceramics since the mechanism controlling the hard behavior (pinned domain walls) will significantly reduce the soft behavior. Here, we address this grand challenge and demonstrate <001> textured MnO 2 and CuO co-doped Pb(In 1/2 Nb 1/2 )O 3- Pb(Mg 1/3 Nb 2/3 )O 3- PbTiO 3 (PIN-PMN-PT) ceramics exhibiting ultrahigh combined soft and hard piezoelectric properties (d 33 = 713 pC N –1 , k 31 = 0.52, Q m ≈950, E c = 9.6 kV cm –1 , tan δ = 0.45%). The outstanding electromechanical properties are explained by considering composition/phase selection, crystallographic anisotropy and defect engineering. Phase-field model in conjunction with high resolution electron microscopy and diffraction techniques is utilized to delineate the contributions arising from intrinsic piezoelectric response, domain dynamics, and local structural heterogeneity. Furthermore, these results will have significant impact in the development of high-power transducers and actuators.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Code Verification and Solution Verification framework in pin-resolved neutron transport code MPACT

Program verification in scientific computing encompasses the application of formal and mathematical techniques to a scientific computing code for its credibility, accuracy, and validity. Code Verification identifies bugs and performance issues in the software development stage. Solution Verification assesses the applicability of the code and the accuracy of the solution to problems of interest. Both activities utilize application cases and quantify the error against prescribed acceptance criteria. However, simply executing more application cases does not guarantee stronger or more comprehensive credibility. Here, we establish a verification framework that involves Code Verification and Solution Verification, both of which work together such that the overarching goal of “converge to the correct answer for the intended application” can be reasonably inferred. The application of such a verification framework is demonstrated using the pin-resolved neutron transport code MPACT, where standard unit tests and regression tests are covered, and where the Method of Exact Solutions and the Method of Manufactured Solutions are successfully used. Additionally, the applicability of Method of Manufactured Solutions is extended to the OECD/NEA C5G7 benchmark problems of practical material and geometric configurations. Solution Verification activities are demonstrated on a practical hierarchy of application models of increasing complexity ranging from 2D pin cell problems to 3D assembly problems. The convergence behavior and rate of convergence with respect to each individual variable are studied and provided. This framework can be adapted broadly to other fields involving scientific computing codes.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Pinned Electrode/Electrolyte Interphase and Its Formation Origin for Sulfurized Polyacrylonitrile Cathode in Stable Lithium Batteries

Sulfurized polyacrylonitrile (SPAN) represents one of the most promising directions for high-energy-density lithium (Li)-sulfur batteries. However, the practical application of Li||SPAN is currently limited by the insufficient chemical/electrochemical stability of electrode/electrolyte interphase (EEI). Here, a pinned EEI layer is designed for stabilizing a SPAN cathode by regulating the EEI formation mechanism in an advanced LiFSI/ether/fluorinated-ether electrolyte. Computational simulations and experimental investigations reveal that, benefiting from the nonsolvating nature, the fluorinated-ether can not only act as a protective shield to prevent the Li polysulfides dissolution but also, more importantly, endow a diffusion-controlled EEI formation process. It promotes the formation of a uniform, protective, and conductive EEI layer pinning into SPAN surface region, enabling the high loading Li||SPAN batteries with superior cycling stability, wide temperature performance, and high-rate capability. Finally, this design strategy opens an avenue for exploring advanced electrolytes for Li||SPAN batteries and guides the interface design for broad types of battery systems.

25 ENERGY STORAGE↗
DOE OSTI2026

Buried Interfaces in Organic Photocathodes for H 2 Evolution: Fermi-Level Pinning and Recombination

Herein, we demonstrate how Fermi-level pinning at buried contacts impacts solar fuel generation in all-polymer photocathodes by systematically comparing the effects of work function, hydroxyl coverage, and hydrogen evolution using chemically modified indium tin oxide (ITO) supports. Photovoltages and net photocathode performance are improved when the ITO is passivated using phosphonic acids, independent of work function, suggesting that the passivation reduces Fermi-level pinning at the buried interface arising from blended heterojunction interactions with surface metal hydroxyls. Transient photovoltage decay reveals differences in recombination mechanisms, supported by light intensity-dependent measurements. Briefly, nonpassivated, hydrophilic contacts exhibit trap-assisted recombination, while passivated, hydrophobic contacts follow bimolecular recombination. We then investigate changes in electroactivity of hole-transfer processes as a function of scan rate and repetitive cycling using a diffusion-controlled molecular redox probe, analogous to a hole-only device achieved via the electrolyte. The nonpassivated buried contacts exhibit higher overpotentials for oxidation, indicative of hole injection/extraction barriers. We observe irreversible electron transfer via the hole-transport level of the blended heterojunction and a strong cycle dependence, consistent with changes in the hole trap state density. Passivation results in more reversible redox behaviors, consistent with more Ohmic-like contacts. Collectively, these results provide context toward the realization of durable organic photoelectrodes with optimized photovoltages and net solar-to-hydrogen conversion efficiencies via fundamental understanding of the rates of carrier generation, recombination, and transport in high-dielectric aqueous environments and opportunities to characterize buried interfaces under device-relevant electric fields.

buried interfaces↗