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At least 163 records · Page 9

Robust Matching of Wavelet Features for Sub-Pixel Registration of Landsat Data

For many Earth and Space Science applications, automatic geo-registration at sub-pixel accuracy has become a necessity. In this work, we are focusing on building an operational system, which will provide a sub-pixel accuracy registration of Landsat-5 and Landsat-7 data. The input to our registration method consists of scenes that have been geometrically and radiometrically corrected. Such pre-processed scenes are then geo-registered relative to a database of Landsat chips. The method assumes a transformation composed of a rotation and a translation, and utilizes rotation- and translation-invariant wavelets to extract image features that are matched using statistically robust feature matching and a generalized Hausdorff distance metric. The registration process is described and results on four Landsat input scenes of the Washington, D.C. area are presented.

LeMoigne, Jacqueline↗

High-Sensitivity X-ray Polarimetry with Amorphous Silicon Active-Matrix Pixel Proportional Counters

Photoelectric X-ray polarimeters based on pixel micropattern gas detectors (MPGDs) offer order-of-magnitude improvement in sensitivity over more traditional techniques based on X-ray scattering. This new technique places some of the most interesting astronomical observations within reach of even a small, dedicated mission. The most sensitive instrument would be a photoelectric polarimeter at the focus of 2 a very large mirror, such as the planned XEUS. Our efforts are focused on a smaller pathfinder mission, which would achieve its greatest sensitivity with large-area, low-background, collimated polarimeters. We have recently demonstrated a MPGD polarimeter using amorphous silicon thin-film transistor (TFT) readout suitable for the focal plane of an X-ray telescope. All the technologies used in the demonstration polarimeter are scalable to the areas required for a high-sensitivity collimated polarimeter. Leywords: X-ray polarimetry, particle tracking, proportional counter, GEM, pixel readout

Black, J. K.↗

A Chip and Pixel Qualification Methodology on Imaging Sensors

This paper presents a qualification methodology on imaging sensors. In addition to overall chip reliability characterization based on sensor s overall figure of merit, such as Dark Rate, Linearity, Dark Current Non-Uniformity, Fixed Pattern Noise and Photon Response Non-Uniformity, a simulation technique is proposed and used to project pixel reliability. The projected pixel reliability is directly related to imaging quality and provides additional sensor reliability information and performance control.

Chen, Yuan↗

Using Trained Pixel Classifiers to Select Images of Interest

We present a machine-learning-based approach to ranking images based on learned priorities. Unlike previous methods for image evaluation, which typically assess the value of each image based on the presence of predetermined specific features, this method involves using two levels of machine-learning classifiers: one level is used to classify each pixel as belonging to one of a group of rather generic classes, and another level is used to rank the images based on these pixel classifications, given some example rankings from a scientist as a guide. Initial results indicate that the technique works well, producing new rankings that match the scientist's rankings significantly better than would be expected by chance. The method is demonstrated for a set of images collected by a Mars field-test rover.

Mazzoni, D.↗

Introduction to the Sub-pixel Spatial Resolution Interferometry Process

In this paper we describe a method called "Sub-Pixel Spatial Resolution Interferometry" used to increase the spatial resolution of interferometric measurements of precision optical surfaces. In this process, multiple interferometric measurements are made as the optic under test (or the CCD array)in shifted at sub-pixel increments. The measurements are then combined to construct a measurement with higher spatial resolution than the original measurements. The process will be described and initial results obtained using this process with a commercially available Fizeau interferometer will be presented.

Mooney, James T.↗

A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

Mendis, Sunetra K.↗

Active pixel sensor array with multiresolution readout

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

Fossum, Eric R.↗

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Pain, Bedabrata↗

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Zheng, Xinyu↗

Miniature Wide-Angle Lens for Small-Pixel Electronic Camera

A proposed wideangle lens is shown that would be especially well suited for an electronic camera in which the focal plane is occupied by an image sensor that has small pixels. The design of the lens is intended to satisfy requirements for compactness, high image quality, and reasonably low cost, while addressing issues peculiar to the operation of small-pixel image sensors. Hence, this design is expected to enable the development of a new generation of compact, high-performance electronic cameras. The lens example shown has a 60 degree field of view and a relative aperture (f-number) of 3.2. The main issues affecting the design are also shown.

Mouroulils, Pantazis↗

Detailed Studies of Pixelated CZT Detectors Grown with the Modified Horizontal Bridgman Method

The detector material Cadmium Zinc Telluride (CZT) achieves excellent spatial resolution and good energy resolution over a broad energy range, several keV up to some MeV. Presently, there are two main methods to grow CZT crystals, the Modified High-Pressure Bridgman (MHB) and the High-Pressure Bridgman (HPB) process. The study presented in this paper is based on MHB CZT substrates from the company Orbotech Medical Solutions Ltd. [Orbotech Medical Solutions Ltd., 10 Plaut St., Park Rabin, P.O. Box 2489, Rehovot, Israel, 76124]. Former studies have shown that high-work-function materials on the cathode side reduce the leakage current and, therefore, improve the energy resolution at lower energies. None of the studies have emphasized on the anode contact material. Therefore, we present in this paper the result of a detailed study in which for the first time the cathode material was kept constant and the anode material was varied. We used four different anode materials: Indium, Titanium, Chromium and Gold, metals with work-functions between 4.1 eV and 5.1 eV. The detector size was 2.0 x 2.0 x 0.5 cu cm with 8 x 8 pixels and a pitch of 2.46 mm. The best performance was achieved with the low-work-function materials Indium and Titanium with energy resolutions of 2.0 keV (at 59 keV) and 1.9 keV (at 122 keV) for Titanium and 2.1 keV (at 59 keV) and 2.9 keV (at 122 keV) for Indium. Taking into account the large pixel pitch of 2.46 mm, these resolutions are very competitive in comparison to those achieved with detectors made of material produced with the more expensive conventional HPB method. We present a detailed comparison of our detector response with 3D simulations. The latter comparisons allow us to determine the mobility-lifetime-products (mu tau-products) for electrons and holes. Finally, we evaluated the temperature dependency of the detector performance and ls-products. For many applications temperature dependence is important, therefore, we extended the scope of our study to temperatures as low as -30 C. There are two important results. The breakdown voltage increases with decreasing temperature, and electron mobility-lifetime-product decreases by about 30% over a range from 20 C to -30 C. The latter effect causes the energy resolution to deteriorate, but the concomitantly increasing breakdown voltage makes it possible to increase the applied bias voltage and restore the full performance

Jung, I.↗

Development of Kilo-Pixel Arrays of Transition-Edge Sensors for X-Ray Spectroscopy

We are developing kilo-pixel arrays of transition-edge sensor (TES) microcalorimeters for future X-ray astronomy observatories or for use in laboratory astrophysics applications. For example, Athena/XMS (currently under study by the european space agency) would require a close-packed 32x32 pixel array on a 250-micron pitch with < 3.0 eV full-width-half-maximum energy resolution at 6 keV and at count-rates of up to 50 counts/pixel/second. We present characterization of 32x32 arrays. These detectors will be readout using state of the art SQUID based time-domain multiplexing (TDM). We will also present the latest results in integrating these detectors and the TDM readout technology into a 16 row x N column field-able instrument.

Adams, J. S.↗

Single Pixel Characterization of X-Ray TES Microcalorimeter Under AC Bias at MHz Frequencies

In this paper we present the progress made at SRON in the read-out of GSFC x-ray transition-edge sensor (TES) micro-calorimeters in the frequency domain. The experiments reported so far, whose aim was to demonstrate an energy resolution of 2eV at 6 keV with a TES acting as a modulator, were carried out at frequencies below 700 kHz using a standard flux locked loop (FLL) SQUID read-out scheme. The TES read-out suffered from the use of sub-optimal circuit components, large parasitic inductances, low quality factor resonators and poor magnetic field shielding. We have developed a novel experimental set-up, which allows us to test several read-out schemes in a single cryogenic run. In this set-up, the TES pixels are coupled via superconducting transformers to 18 high-Q lithographic LC filters with resonant frequencies ranging between 2 and 5 MHz. The signal is amplified by a two-stage SQUID current sensor and baseband feedback is used to overcome the limited SQUID dynamic range. We study the single pixel performance as a function of TES bias frequency, voltage and perpendicular magnetic field.

Gottardi, L.↗

Verification of Dosimetry Measurements with Timepix Pixel Detectors for Space Applications

The current capabilities of modern pixel-detector technology has provided the possibility to design a new generation of radiation monitors. Timepix detectors are semiconductor pixel detectors based on a hybrid configuration. As such, the read-out chip can be used with different types and thicknesses of sensors. For space radiation dosimetry applications, Timepix devices with 300 and 500 microns thick silicon sensors have been used by a collaboration between NASA and University of Houston to explore their performance. For that purpose, an extensive evaluation of the response of Timepix for such applications has been performed. Timepix-based devices were tested in many different environments both at ground-based accelerator facilities such as HIMAC (Heavy Ion Medical Accelerator in Chiba, Japan), and at NSRL (NASA Space Radiation Laboratory at Brookhaven National Laboratory in Upton, NY), as well as in space on board of the International Space Station (ISS). These tests have included a wide range of the particle types and energies, from protons through iron nuclei. The results have been compared both with other devices and theoretical values. This effort has demonstrated that Timepix-based detectors are exceptionally capable at providing accurate dosimetry measurements in this application as verified by the confirming correspondence with the other accepted techniques.

Kroupa, M.↗

Kepler Commissioning Data for Measurement of the Pixel Response Function and Focal Plane Geometry

This document describes the Kepler PRF/FPG data release. This data was taken on April 27-29, 2009, during Kepler's commissioning phase in order to measure the pixel response function (PRF) (Bryson et al., 2010a) and focal plane geometry (FPG) (Tenenbaum and Jenkins, 2010). 33,424 stellar targets were observed for 243 long cadences, each with a duration of 14.7 minutes (half the duration of a normal Kepler long cadence). During these 243 cadences the Kepler photometer was moved, pointing in a dither pattern to facilitate PRF measurement. Motion occurred during the even cadences (second, fourth, etc.), with the telescope in stable fine point at each pointing in the dither pattern during the odd cadences (first, third, etc.). The first and last cadences were at the center of the dither pattern. Motion cadences are included in this release, but they do not contain any data. For details on how this data was used to derive the Kepler PRF and FPG models, see Bryson et al. (2010a) and Tenenbaum and Jenkins (2010). Descriptions of the PRF and FPG models are found in Thompson et al. (2016), x2.3.5.17 and x2.3.5.16 respectively. The data in this release can be used to recompute the Kepler PRF and FPG. Such a reconstruction, however, would not reflect measured seasonal changes in the PRF described in Van Cleve et al. (2016b), x5.2.The dither pattern is shown in Figure 1. The crosses show the commanded pointings and the circles show the measured pointings. Measured pointings are different from the commanded pointings due to the early state of calibration of the fine guidance sensors during commissioning (Van Cleve et al., 2016a). The measured offsets from the center of the pattern are given in RADEC offsets and pixel offsets in Table 1. The order of the offsets was randomized during data collection to avoid time-dependent systematics.

Kepler↗

Nominal 30-M Cropland Extent Map of Continental Africa by Integrating Pixel-Based and Object-Based Algorithms Using Sentinel-2 and Landsat-8 Data on Google Earth Engine

A satellite-derived cropland extent map at high spatial resolution (30-m or better) is a must for food and water security analysis. Precise and accurate global cropland extent maps, indicating cropland and non-cropland areas, is a starting point to develop high-level products such as crop watering methods (irrigated or rainfed), cropping intensities (e.g., single, double, or continuous cropping), crop types, cropland fallows, as well as assessment of cropland productivity (productivity per unit of land), and crop water productivity (productivity per unit of water). Uncertainties associated with the cropland extent map have cascading effects on all higher-level cropland products. However, precise and accurate cropland extent maps at high spatial resolution over large areas (e.g., continents or the globe) are challenging to produce due to the small-holder dominant agricultural systems like those found in most of Africa and Asia. Cloud-based Geospatial computing platforms and multi-date, multi-sensor satellite image inventories on Google Earth Engine offer opportunities for mapping croplands with precision and accuracy over large areas that satisfy the requirements of broad range of applications. Such maps are expected to provide highly significant improvements compared to existing products, which tend to be coarser in resolution, and often fail to capture fragmented small-holder farms especially in regions with high dynamic change within and across years. To overcome these limitations, in this research we present an approach for cropland extent mapping at high spatial resolution (30-m or better) using the 10-day, 10 to 20-m, Sentinel-2 data in combination with 16-day, 30-m, Landsat-8 data on Google Earth Engine (GEE). First, nominal 30-m resolution satellite imagery composites were created from 36,924 scenes of Sentinel-2 and Landsat-8 images for the entire African continent in 2015-2016. These composites were generated using a median-mosaic of five bands (blue, green, red, near-infrared, NDVI) during each of the two periods (period 1: January-June 2016 and period 2: July-December 2015) plus a 30-m slope layer derived from the Shuttle Radar Topographic Mission (SRTM) elevation dataset. Second, we selected Cropland/Non-cropland training samples (sample size 9791) from various sources in GEE to create pixel-based classifications. As supervised classification algorithm, Random Forest (RF) was used as the primary classifier because of its efficiency, and when over-fitting issues of RF happened due to the noise of input training data, Support Vector Machine (SVM) was applied to compensate for such defects in specific areas. Third, the Recursive Hierarchical Segmentation (RHSeg) algorithm was employed to generate an object-oriented segmentation layer based on spectral and spatial properties from the same input data. This layer was merged with the pixel-based classification to improve segmentation accuracy. Accuracies of the merged 30-m crop extent product were computed using an error matrix approach in which 1754 independent validation samples were used. In addition, a comparison was performed with other available cropland maps as well as with LULC maps to show spatial similarity. Finally, the cropland area results derived from the map were compared with UN FAO statistics. The independent accuracy assessment showed a weighted overall accuracy of 94, with a producers accuracy of 85.9 (or omission error of 14.1), and users accuracy of 68.5 (commission error of 31.5) for the cropland class. The total net cropland area (TNCA) of Africa was estimated as 313 Mha for the nominal year 2015.

Cropland mapping; cropland areas; 30-m; Landsat-8;↗

No Pixel Left Behind: Interactively Visualizing ''Everything'' from NASA's Earth Observations

The problem: satellite swath overlaps. Polar orbiting satellites like Terra, Aqua, and the joint NASA/NOAA Suomi-NPP satellite circle the globe from pole to pole, collecting data daily, swath by swath. Having this density of data is great for building a comprehensive mosaic of the planet, but sometimes there is something interesting occurring in one swath but is covered by a subsequent swath when the satellite passes over 90 minutes later. With our new prototype based on Worldview and the Global Imagery Browse Services (GIBS), we combine the best of both worlds to interactively visualize the entire globe as a mosaic and allow the user to _peel away the overlaps_ to see every pixel that was observed by the satellite. This ability to look at every pixel - and to know when they were captured - is especially important near the poles where swath overlaps are most common.

Boller, R.↗

640 X 512 pixel long-wavelength infrared narrowband, multiband, and broadband QWIP focal plane arrays

A 640 512 pixel, long-wavelength cutoff, narrowband(delta lambda/lambda ~ 10%) quantum-well infrared photodetector(QWIP) focal plane array (FPA), a four-band QWIP FPA in the 4??m spectral region, and a broadband (delta lambda/lambda ~ 42%)QWIP FPA having a 15.4 m cutoff have been demonstrated. In this paper, we discuss the electrical and optical characterization of these FPAs, and their performance. In addition, we discuss the development of a very sensitive (NEDT ~ 10.6 mK) 640 X 512 pixel thermal imaging camera having a 9 lambda m cutoff.

broadband↗