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At least 163 records · Page 9

640 X 512 pixel long-wavelength infrared narrowband, multiband, and broadband QWIP focal plane arrays

A 640 512 pixel, long-wavelength cutoff, narrowband(delta lambda/lambda ~ 10%) quantum-well infrared photodetector(QWIP) focal plane array (FPA), a four-band QWIP FPA in the 4??m spectral region, and a broadband (delta lambda/lambda ~ 42%)QWIP FPA having a 15.4 m cutoff have been demonstrated. In this paper, we discuss the electrical and optical characterization of these FPAs, and their performance. In addition, we discuss the development of a very sensitive (NEDT ~ 10.6 mK) 640 X 512 pixel thermal imaging camera having a 9 lambda m cutoff.

broadband

Electron beam irradiation of thinned backside illuminated CCDs

The physical properties of backside illuminated surface channel CCD arrays and a pixel buried channel CCD array when bombarded with electrons were studied. The devices were mounted in a high vacuum system and irradiated with electrons generated by an electron gun. Basic measurements of EBS gain, dead voltage, transfer efficiency and dark current were performed to verify proper device operation. The surface channel devices were then irradiated with electrons of up to 8 keV energy for up to 98 hours while the buried channel device was irradiated with electrons.

Borsuk, G. M.

Monte Carlo Techniques for Calculations of Charge Deposition and Displacement Damage from Protons in Visible and Infrared Sensor Arrays

This slide presentation examines motivation for Monte Carlo methods, charge deposition in sensor arrays, displacement damage calculations, and future work. The discussion of charge deposition sensor arrays includes Si active pixel sensor APS arrays and LWIR HgCdTe FPAs. The discussion of displacement damage calculations includes nonionizing energy loss (NIEL), HgCdTe NIEL calculation results including variance, and implications for damage in HgCdTe detector arrays.

Marshall, Paul

Fabrication of Transition Edge Sensor Microcalorimeters for X-Ray Focal Planes

Requirements for focal planes for x-ray astrophysics vary widely depending on the needs of the science application such as photon count rate, energy band, resolving power, and angular resolution. Transition edge sensor x-ray calorimeters can encounter limitations when optimized for these specific applications. Balancing specifications leads to choices in, for example, pixel size, thermal sinking arrangement, and absorber thickness and material. For the broadest specifications, instruments can benefit from multiple pixel types in the same array or focal plane. Here we describe a variety of focal plane architectures that anticipate science requirements of x-ray instruments for heliophysics and astrophysics. We describe the fabrication procedures that enable each array and explore limitations for the specifications of such arrays, including arrays with multiple pixel types on the same array.

superconducting

Refinement of the Transition-edge Sensor Design for ATHENA X-IFU

The X-ray Integral Field Unit (X-IFU) instrument on the Advanced Telescope for High ENergy Astrophysics (ATHENA) is baselined to have 2376 transition-edge sensor (TES) microcalorimeter pixels in a single array. The required performance for X-IFU has been demonstrated on a kilo-pixel array of square TES’s with 50 m side length, and this is considered the baseline pixel design. However, over the last few years we have explored small modifications to this design in search of a globally optimized instrument performance. We have previously reported on investigations of extending the length of the TES’s and variations in the number of X-ray absorber support stems. Here we report on investigations of TES designs with a length of 50 m but narrower width. We will discuss the consequence of this on magnetic field sensitivity, resistive transition parameters, spectral performance, and ease of multiplexing. We will also discuss how the number and position of the absorber attachments influences the vibrational modes of the pixels, and the impact this may have on performance. Finally, we will present measurements of more substantial change options of our TES design, including more extreme TES geometries, the use of metal islands or etched holes in the silicon nitride membranes, and the position of wiring to minimize current-induced magnetic field effects. The exploration of all these changes to the design are not only useful for optimizing performance on X-IFU, but also guide our fundamental understanding of the key physics of TES microcalorimeters.

Nick Wakeham

Mid-infrared detector development for the Origins Space Telescope

Mid-infrared detector arrays operating from 2.8 to 20 μm are baselined in the design of the Origins Space Telescope Mid-Infrared Spectrometer Instrument. This instrument is designed to detect and measure the spectral signatures of gases of biogenic origin in the atmospheres of exoplanets as they transit their host stars. In order to make these detections, the detector array’s pixels need to have high-signal stability when exposed to a constant flux in multiple time-series integration over a typical transit time of a few hours. With the use of a densified pupil spectrometer design, pointing effects can be mitigated because pointing variations do not displace spectra on the detector and each wavelength of light is averaged over a large number of pixels, giving good spectrophotometric stabilities. The current state-of-the-art detector arrays do not achieve these stabilities, although with a feasible development program this level of performance should be achievable. Three detector technologies are under consideration for this development, HgCdTe arrays, Si:As impurity band conduction arrays, and transition edge super-conductor bolometer arrays. We primarily treat the HgCdTe technology development, but also introduce the paths forward for the other two technologies. After a few years-long investigative programs, a down-select will be undertaken to select the flight technology.

Astronomy

Advances in Small Pixel TES-Based X-Ray Microcalorimeter Arrays for Solar Physics and Astrophysics

We are developing small-pixel transition-edge-sensor (TES) for solar physics and astrophysics applications. These large format close-packed arrays are fabricated on solid silicon substrates and are designed to accommodate count-rates of up to a few hundred counts/pixel/second at a FWHM energy resolution approximately 2 eV at 6 keV. We have fabricated versions that utilize narrow-line planar and stripline wiring. We present measurements of the performance and uniformity of kilo-pixel arrays, incorporating TESs with single 65-micron absorbers on a 7s-micron pitch, as well as versions with more than one absorber attached to the TES, 4-absorber and 9-absorber "Hydras". We have also fabricated a version of this detector optimized for lower energies and lower count-rate applications. These devices have a lower superconducting transition temperature and are operated just above the 40mK heat sink temperature. This results in a lower heat capacity and low thermal conductance to the heat sink. With individual single pixels of this type we have achieved a FWHM energy resolution of 0.9 eV with 1.5 keV Al K x-rays, to our knowledge the first x-ray microcalorimeter with sub-eV energy resolution. The 4-absorber and 9-absorber versions of this type achieved FWHM energy resolutions of 1.4 eV and 2.1 eV at 1.5 keV respectively. We will discuss the application of these devices for new astrophysics mission concepts.

Bandler, S. R.

Thermal Infrared Detector Sparse Array for NASA Planetary Applications

In this work, we present an uncooled infrared (IR) thermal imager featuring a sparse array of resonant pixels that can be monolithically integrated with the readout electronics for long-term operation in hightemperature environments. Each of the detector pixels is made of an IR-sensitive GaN microresonator developed to be operated at up to 500 0C. The pixels are employed in sparse array configuration to allow for routing the signal carrying traces and to ease the routing from pixel to circuit, as well as to reduce the power consumption. A 128´128 sparse resonator array with the array density of 37.5% is designed and used in conjunction with the Compressed Sensing method to reconstruct complex test images from highly incomplete data. Capabilities and performance metrics of the recovery technique are explored.

Rais-Zadeh, Mina

A Compact Polarization Imager

A new type of image detector has been designed to analyze the polarization of light simultaneously at all picture elements (pixels) in a scene. The Integrated Dual Imaging Detector (IDID) consists of a polarizing beamsplitter bonded to a custom-designed charge-coupled device with signal-analysis circuitry, all integrated on a silicon chip. The IDID should simplify the design and operation of imaging polarimeters and spectroscopic imagers used, for example, in atmospheric and solar research. Other applications include environmental monitoring and robot vision. Innovations in the IDID include two interleaved 512 x 1024 pixel imaging arrays (one for each polarization plane), large dynamic range (well depth of 10(exp 6) electrons per pixel), simultaneous readout and display of both images at 10(exp 6) pixels per second, and on-chip analog signal processing to produce polarization maps in real time. When used with a lithium niobate Fabry-Perot etalon or other color filter that can encode spectral information as polarization, the IDID can reveal tiny differences between simultaneous images at two wavelengths.

Thompson, Karl E.

Retinal Light Processing Using Carbon Nanotubes

Method and system for processing light signals received by the eye of a human or other animal, where the eye may be compromised or non-functioning. Incident light is received at first and second pixels in a photodetector array and provides a pixel electrical signal representing the received light. Each of an array of carbon nanotube (CNT) towers is connected to a pixel, has a first tower end penetrating a retinal active layer of the animal and has a second tower end positioned to receive to receive and transport the pixel electrical signal to the retinal active layer. The CNT tower may be coated with a biologically active substance or chemically modified to promote neurite connections with the tower. The photoreceptor array can be provide with a signal altering mechanism that alters at least one of light intensity and wavelength intensity sensed by a first pixel relative to a second pixel, to correct for one or more selected eye problems.

David J Loftus

Infrared Imaging using Sparse Microresonator Arrays and Compressed Sensing

In this work, we present an uncooled infrared (IR) thermal imager featuring a sparse array of resonant pixels that can be monolithically integrated with the readout electronics for long-term operation in high-temperature environments. Each of the detector pixels is made of an IR-sensitive GaN microresonator developed to be operated at up to 500 0C. The pixels are employed in sparse array configuration to allow for routing the signal carrying traces and to ease the routing from pixel to circuit, as well as to reduce the power consumption at the expense of moderate post-processing time and increased complexity to recover the image. Three 128 by 128 sparse resonator arrays with the array densities of 10%, 25% and 37.5% are designed, and used in conjunction with the Compressed Sensing (CS) method to reconstruct complex test images from highly incomplete data. Capabilities and performance metrics of the recovery technique are explored.

Rais-Zadeh, Mina

An Integrated Imaging Detector of Polarization and Spectral Content

A new type of image detector has been designed to simultaneously analyze the polarization of light at all picture elements in a scene. The Integrated Dual Imaging Detector (IDID) consists of a polarizing beamsplitter bonded to a charge-coupled device (CCD), with signal-analysis circuitry and analog-to-digital converters, all integrated on a silicon chip. It should be capable of 1:10(exp 4) polarization discrimination. The IDID should simplify the design and operation of imaging polarimeters and spectroscopic imagers used, for example, in atmospheric and solar research. Innovations in the IDID include (1) two interleaved 512 x 1024-pixel imaging arrays (one for each polarization plane); (2) large dynamic range (well depth of 10(exp 6) electrons per pixel); (3) simultaneous readout of both images at 10 million pixels per second each; (4) on-chip analog signal processing to produce polarization maps in real time; (5) on-chip 10-bit A/D conversion. When used with a lithium-niobate Fabry-Perot etalon or other color filter that can encode spectral information as polarization, the IDID can collect and analyze simultaneous images at two wavelengths. Precise photometric analysis of molecular or atomic concentrations in the atmosphere is one suggested application. When used in a solar telescope, the IDID will charge the polarization, which can then be converted to maps of the vector magnetic fields on the solar surface.

Rust, D. M.

An All Silicon Feedhorn-Coupled Focal Plane for Cosmic Microwave Background Polarimetry

Upcoming experiments aim to produce high fidelity polarization maps of the cosmic microwave background. To achieve the required sensitivity, we are developing monolithic, feedhorn-coupled transition edge sensor polarimeter arrays operating at 150 GHz. We describe this focal plane architecture and the current status of this technology, focusing on single-pixel polarimeters being deployed on the Atacama B-mode Search (ABS) and an 84-pixel demonstration feedhorn array backed by four 10-pixel polarimeter arrays. The feedhorn array exhibits symmetric beams, cross-polar response less than -23 dB and excellent uniformity across the array. Monolithic polarimeter arrays, including arrays of silicon feedhorns, will be used in the Atacama Cosmology Telescope Polarimeter (ACTPol) and the South Pole Telescope Polarimeter (SPTpol) and have been proposed for upcoming balloon-borne instruments.

Hubmayr, J.

X-Ray Spectroscopy of Optically Bright Planets using the Chandra Observatory

Since its launch in July 1999, Chandra's Advanced CCD Imaging Spectrometer (ACIS) has observed several planets (Venus, Mars, Jupiter and Saturn) and 6 comets. At 0.5 arc-second spatial resolution, ACIS detects individual x-ray photons with good quantum efficiency (25% at 0.6 KeV) and energy resolution (20% FWHM at 0.6 KeV). However, the ACIS CCDs are also sensitive to optical and near-infrared light, which is absorbed by optical blocking filters (OBFs) that eliminate optical contamination from all but the brightest extended sources, e.g., planets. .Jupiter at opposition subseconds approx.45 arc-seconds (90 CCD pixels.) Since Chandra is incapable of tracking a moving target, the planet takes 10 - 20 kiloseconds to move across the most sensitive ACIS CCD, after which the observatory must be re-pointed. Meanwhile, the OBF covering that CCD adds an opt,ical signal equivalent to approx.110 eV to each pixel that lies within thc outline of the Jovian disk. This has three consequences: (1) the observatory must be pointed away from Jupiter while CCD bias maps are constructed; (2) most x-rays from within the optical image will be misidentified as charged-particle background and ignored; and (3) those x-rays that are reported will bc assigned anomalously high energies. The same also applies to thc other planets, but is less serious since they are either dimmer at optical wavelengths, or they show less apparent motion across the sky, permitting reduced CCD exposure times: the optical contamination from Saturn acids approx.15 eV per pixel, and from Mars and Venus approx.31 eV. After analyzing a series of short .Jupiter observations in December 2000, ACIS parameters were optimized for the February 2003 opposition. CCD bias maps were constructed while Chandra pointed away from Jupiter, and the subsequent observations employed on-board software to ignore any pixel that contained less charge than that expected from optical leakage. In addition, ACIS was commanded to report 5 x 5 arrays of pixel values surrounding each x-ray event, and the outlying values were employed during ground processing to correct for the optical contamination.

Ford, P. G.

Large format long-wavelength infrared narrow-band, multi-band, and broad-band QWIP focal plane arrays

A 640x512 pixel, long-wavelength cutoff, narrow-band quantum well infrared photodetector focal pllay array, a four-band QWIP FPA in 4-16 um spectral region, and a broad-band QWIP FPA having 15.4 mum cutoff have been demonstrated. In this paper we discuss the detector designs, dark currents, quantum efficiencies, responsivities, detectivities, noise equivalent differential temperatures, the effect of FPA nonuniformity on performance, and the operabilities of these QWIP FPAs.

Mumolo, J. M.

Image Calibration

Calibrate_Image calibrates images obtained from focal plane arrays so that the output image more accurately represents the observed scene. The function takes as input a degraded image along with a flat field image and a dark frame image produced by the focal plane array and outputs a corrected image. The three most prominent sources of image degradation are corrected for: dark current accumulation, gain non-uniformity across the focal plane array, and hot and/or dead pixels in the array. In the corrected output image the dark current is subtracted, the gain variation is equalized, and values for hot and dead pixels are estimated, using bicubic interpolation techniques.

Peay, Christopher S.

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.