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Results for “Point defect diffusivity”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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151 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, Basab↗
DOE OSTI2024

Thermodynamic origin of nonvolatility in resistive memory

Electronic switches based on the migration of high-density point defects, or memristors, are poised to revolutionize post-digital electronics. Despite significant research, key mechanisms for filament formation and oxygen transport remain unresolved, hindering our ability to predict and design device properties. For example, experiments have achieved 10 orders of magnitude longer retention times than predicted by current models. Here, using electrical measurements, scanning probe microscopy, and first-principles calculations on tantalum oxide memristors, we reveal that the formation and stability of conductive filaments crucially depend on the thermodynamic stability of the amorphous oxygen-rich and oxygen-poor compounds, which undergo composition phase separation. Including the previously neglected effects of this amorphous phase separation reconciles unexplained discrepancies in retention and enables predictive design of key performance indicators such as retention stability. Furthermore, this result emphasizes non-ideal thermodynamic interactions as key design criteria in post-digital devices with defect densities substantially exceeding those of today’s covalent semiconductors.

36 MATERIALS SCIENCE↗
NASA NTRS2000

The Turbulent/Non-Turbulent Interface Bounding a Far-Wake

The velocity fields of a turbulent wake behind a flat plate obtained from the direct numerical simulations of Moser et al. are used to study the structure of the flow in the intermittent zone where there are, alternately, regions of fully turbulent flow and non-turbulent velocity fluctuations either side of a thin randomly moving interface. Comparisons are made with a wake that is 'forced' by amplifying initial velocity fluctuations. There is also a random temperature field T in the flow; T varies between constant values of 0.0 and 1.0 on the sides of the wake. The value of the Reynolds number based on the centreplane mean velocity defect and halfwidth b of the wake is Re approx. = 2000. It is found that the thickness of the continuous interface is about equal to 0.07b, whereas the amplitude of fluctuations of the instantaneous interface displacement y(sub I)(t) is an order of magnitude larger, being about 0.5b. This explains why the mean statistics of vorticity in the intermittent zone can be calculated in terms of the probability distribution of y(sub I) and the instantaneous discontinuity in vorticity across the interface. When plotted as functions of y - y(sub I), the conditional mean velocity (U) and temperature (T) profiles show sharp jumps Delta(U) and Delta(T) at the interface adjacent to a thick zone where (U) and (T) vary much more slowly. Statistics for the vorticity and velocity variances, available in such detail only from DNS data, show how streamwise and spanwise components of vorticity are generated by vortex stretching in the bulges of the interface. Flow fields around the interface, analyzed in terms of the local streamline pattern, confirm previous results that the advancement of the vortical interface into the irrotational flow is driven by large-scale eddy motion. It is argued that because this is an inviscid mechanism the entrainment process is not sensitive to the value of Re, and that small-scale nibbling only plays a subsidiary role. While mean Reynolds stresses decrease gradually in the intermittent zone, conditional stresses are found to decrease sharply towards zero at the interface. Using one-point turbulence models applied to either unconditional or conditional statistics for the turbulent region and then averaged, the entrainment rate E(sub b) would, if calculated exactly, be zero. But if computed with standard computational methods, E(sub b) would be non-zero because of numerical diffusion. It is concluded that the current practice in statistical models of approximating entrainment by a diffusion process is computationally arbitrary and physically incorrect. An analysis shows how E(sub b) is related to Delta(U) and the jump in shear stress at the interface, and correspondingly to Delta(T) and the heat flux.

Bisset, David K.↗
DOE OSTI2025

Enhancing low-temperature sintering in the MgO-LiF system: Mechanistic insights

In the present article, we provide compelling evidence that minor (1 wt%) additions of micron and nanometre-sized LiF particles in MgO decompose leading to free Li diffusing into MgO surfaces enhancing vacancy production during direct current sintering. The addition of nanometre-sized LiF particles leads to a > 500 °C reduction in the sintering temperature and over 99 % theoretical density of final consolidated compacts. Correlating differential scanning calorimetry with in-situ x-ray diffraction, together with Schottky calculations, post sintering electron microscopy and laser induced breakdown spectroscopy, we uncover critical insights into this impressive reduction in sintering temperature. Our quantitative analysis reveals that MgO and LiF interact at low temperatures with the diffusion of Li into the surface of MgO particles due to the intrinsic structural disorder of the LiF and MgO crystallites. Nanometre-sized LiF particles were found to react the most at low temperatures due to their increased structural disorder. Our multimodal characterization points to a Li-promoted densification and sintering mechanism. This impressive reduction in sintering temperature can be harnessed to promote low-temperature fabrication of MgO-based composites for technological applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Discrete stochastic model of point defect-dislocation interaction for simulating dislocation climb

Dislocation climb is an important high temperature process in metals plasticity, responsible for the phenomena such as creep, swelling, or hardening. Climb is defined by the ability of dislocations to leave their original glide plane by interacting with point defects. As such, dislocation climb is controlled by point defect diffusion/absorption/emission, all of which involve thermal activation. The existing thermodynamically consistent models for climb are generally formulated in a continuum framework, through the definition of effective defect fluxes and climb propensities in response to thermodynamic driving forces. However, the point-wise discrete nature of vacancies (and/or self-interstitials) confers a highly discrete nature to the climb dynamics, which is also strongly affected by elastic forces. The combination of discreteness, thermal activation, and elasticity makes this process too challenging for direct atomistic methods such as molecular dynamics. Here we develop a kinetic Monte Carlo model that captures vacancy generation and transport kinetics acting in conjuction with the evolving elastic fields provided by discrete dislocation dynamics simulations. The two models are coupled via the applied stresses and stress gradients generated by dislocation structures at vacancy locations. Our simulations reveal two surprising results. First that climb is dominated by vacancy emission even when the background vacancy concentration is much higher than the equilibrium one. And, second, that climb velocities might be much faster than otherwise believed when one uses the classical theories of climb. These effects are due to the locality of vacancy-dislocation processes, which are not captured in classical treatments that assume smooth vacancy fluxes and homogeneous concentrations. We apply the method to study elementary climb processes in body-centered cubic iron and furnish climb mobility functions to be used in parametric dislocation dynamics and/or crystal plasticity simulations. Here, we apply the technique to study non-conservative plastic bypass of spherical precipitates by edge dislocations and point out the differences between our discrete approach and existing continuum formulations.

36 MATERIALS SCIENCE↗
NASA NTRS2026

AC and DC Fault Management for Megawatt Electrified Aircraft Electrical Powertrains Task 3: Lifetime and Reliability of Electrical Insulators

This research project was a collaborative investigation between researchers at the RTX Technology Research Center (RTRC) and the University of Texas at Austin and made a significant contribution to enabling electric aircraft. The transport of electric power between the points of generation and use requires power cables. These cables must be smaller, lighter and provide a more predictable life than power cables used in stationary applications. Consequently, this investigation provided heretofore unavailable information supporting the safety and reliability of smaller lighter power cables for electrified aircraft. In addition, the research identified key additional engineering data needed to support quantitative reliability assessments. Important advances included: • Demonstrated that at least one manufacturer can make a novel, smaller, lighter power cable that is free from serious defects. • Developed and published an appropriate analytical construct to describe the life of this novel cable. This is a necessary step for use in aviation where the understanding of remaining life is critical. • Demonstrated thermal-mechanical aging that suggested 1000+ flights before the thermal-mechanical processes produced defects large enough that the defect growth was accelerated electrically. • Showed that electrical aging took place at two rates. The first possibly lasting weeks to months and the second possibly days to weeks. If robust, this provides a good diagnostic for cable replacement. • Demonstrated that the traditional electrical testing of cable materials using manufactured voids can be misleading due to the size of the voids. Emerging laser drilling technology permitted demonstration that the physics of failure in realistically small voids is different from that in the unrealistically large voids used in earlier research, which is very important for high-quality, high-performance, small aircraft cables. Although this project represents a significant contribution to the specifics of cable aging in the aircraft environment, important additional research remains to be completed, including: • Non-uniform thermal cycling by applying the heat from the center conductor to maximize thermal stress next to the core area where the electric gradient is the strongest. This builds on the uniform thermal cycling that has been completed. • The augmentation of the thermal-mechanical failure rate by electrical processes. Better understanding of these time constants strongly affects the ability to predict life. • Termination design: Terminations provide not only electrical reflection potential, but a location for a series arc fault and an area where ozone can diffuse into the center conductor and negatively affect cable insulation. • The abrasion and ozone resistance of the cable jacket. • Pressure cycling as an accelerant of thermal, mechanical, and/or electrical aging. • Possible methods for online PD detection and offline PD localization

model↗
DOE OSTI2022

Role of carbon and hydrogen in limiting n -type doping of monoclinic ( Al x Ga 1 – x ) 2 O 3

In this study, we use hybrid density functional calculations to assess n -type doping in monoclinic ( Al x Ga 1 – x ) 2 O 3 alloys. We focus on silicon, the most promising donor dopant, and study the structural properties, formation energies, and charge-state transition levels of its various configurations. We also explore the impact of carbon and hydrogen, which are common impurities in metal-organic chemical vapor deposition (MOCVD). In Ga 2 O 3 , Si Ga is an effective shallow donor, but in Al 2 O 3 Si Al acts as a DX center with a ( + / – ) transition level in the band gap. Interstitial hydrogen acts as a shallow donor in Ga 2 O 3 but behaves as a compensating acceptor in n -type Al 2 O 3 . Interpolation indicates that Si is an effective donor in ( Al x Ga 1 – x ) 2 O 3 up to 70% Al, but it can be compensated by hydrogen already at 1% Al. We also assess the diffusivity of hydrogen and study complex formation. Si cation – H complexes have relatively low binding energies. Substitutional carbon on a cation site acts as a shallow donor in Ga 2 O 3 , but can be stable in a negative charge state in ( Al x Ga 1 – x ) 2 O 3 when x > 5 % . Substitutional carbon on an oxygen site ( C O ) always acts as an acceptor in n -type ( Al x Ga 1 – x ) 2 O 3 , but will incorporate only under relatively oxygen-poor conditions. C O – H complexes can actually incorporate more easily, explaining observations of carbon-related compensation in Ga 2 O 3 grown by MOCVD. We also investigate C cation – H complexes, finding they have high binding energies and act as compensating acceptors when x > 56 % ; otherwise the hydrogen just passivates the unintentional carbon donors. C-H complex formation explains why MOCVD-grown Ga 2 O 3 can exhibit record-low free-carrier concentrations, in spite of the unavoidable incorporation of carbon. Our study highlights that, while Si is in principle a suitable shallow donor in ( Al x Ga 1 – x ) 2 O 3 alloys up to high Al compositions, control of unintentional impurities is essential to avoid compensation.

36 MATERIALS SCIENCE↗