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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

A nanoporous capacitive electrochemical ratchet for continuous ion separations

Directed ion transport in liquid electrolyte solutions underlies many phenomena in natural and industrial settings. While nature has evolved structures that drive continuous ion flow without Faradaic redox reactions, establishing this process in synthetic systems has been challenging. Here, in this study, we report an ion pump that drives aqueous ions against a force using a capacitive ratchet mechanism independent of redox reactions. Modulation of an electric potential between thin metallic layers on either face of a nanoporous alumina wafer immersed in solution results in persistent voltages and ionic currents. This occurs due to the nonlinear capacitive nature of electric double layers, whose repeated charging and discharging sustains a continuous ion flux. Using this approach, we demonstrate ratchet-driven electrodialysis that reaches a 50% decrease in the conductivity of the solution in a dilution cell. These ratchet-based ion pumps can enable continuous desalination and selective ion separation using an electrically powered device with no moving parts.

Kautz, Rylan [University of California, Irvine, CA↗
DOE OSTI2024

Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

Abstract Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In particular, GaN has properties that are advantageous for high voltage and high frequency power devices; however, defects in the substrate growth and manufacturing are preventing vertical devices from performing optimally. This paper explores the application of machine learning techniques utilizing data obtained from optical profilometry as input variables to predict the probability of a wafer meeting performance metrics, specifically the breakdown voltage (V bk ). By incorporating machine learning techniques, it is possible to reliably predict performance metrics that cause devices to fail at low voltage. For diodes that fail at a higher (but still below theoretical) breakdown voltage, alternative inspection methods or a combination of several experimental techniques may be necessary.

42 ENGINEERING↗
DOE OSTI2022

Hybrid molecular beam epitaxy of germanium-based oxides

Abstract Germanium-based oxides such as rutile GeO 2 are garnering attention owing to their wide band gaps and the prospects of ambipolar doping for application in high-power devices. Here, we present the use of germanium tetraisopropoxide (GTIP), a metal-organic chemical precursor, as a source of germanium for the demonstration of hybrid molecular beam epitaxy for germanium-containing compounds. We use Sn 1- x Ge x O 2 and SrSn 1- x Ge x O 3 as model systems to demonstrate our synthesis method. A combination of high-resolution X-ray diffraction, scanning transmission electron microscopy, and X-ray photoelectron spectroscopy confirms the successful growth of epitaxial rutile Sn 1- x Ge x O 2 on TiO 2 (001) substrates up to x = 0.54 and coherent perovskite SrSn 1- x Ge x O 3 on GdScO 3 (110) substrates up to x = 0.16. Characterization and first-principles calculations corroborate that germanium occupies the tin site, as opposed to the strontium site. These findings confirm the viability of the GTIP precursor for the growth of germanium-containing oxides by hybrid molecular beam epitaxy, thus providing a promising route to high-quality perovskite germanate films.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Zinc–hydrogen and zinc–iridium pairs in β-Ga 2 O 3

Zinc-doped monoclinic gallium oxide (β-Ga 2 O 3 :Zn) has semi-insulating properties that could make it a preferred material as a substrate for power devices. In this work, infrared and UV/Visible spectroscopy were used to investigate the defect properties of bulk β-Ga 2 O 3 :Zn crystals. As-grown crystals contain a single O-H stretching mode at 3486.7 cm -1 due to a neutral ZnH complex. A deuterium-annealed sample displays the corresponding O-D stretching mode at 2582.9 cm -1 , confirming the O-H assignment. A strong Ir 4+ electronic transition at 5147.6 cm -1 is also observed, along with sidebands attributed to ZnIr pairs. These sidebands show distinct differences compared with Mg-doped samples; most importantly, several peaks are attributed to Ir 4+ paired with a Zn on the tetrahedral Ga(I) site. Annealing under an oxygen atmosphere produced insulating material with a resistance above 1 TΩ.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Simulating a pulsed-power-driven plasma with ideal MHD

We describe a simple practical numerical method for simulating plasma driven within a vacuum chamber by a pulsed power generator. Typically, in this type of simulation, the vacuum region adjacent to the plasma is approximated as a highly resistive, light fluid; this involves computationally expensive solvers describing the diffusion of the magnetic field through this fluid. Instead, we provide a recipe for coupling pulsed power generators to the magnetohydrodynamics (MHD) domain by approximating the perfectly insulating vacuum as a light, perfectly conducting, inviscid MHD fluid and discuss the applicability of this counter-intuitive technique. This much more affordable ideal MHD representation is particularly useful in situations where a plasma exhibits interesting three-dimensional phenomena, either due to the design of the experiment or due to developing instabilities. We verified that this coupling recipe works by modeling an exactly solvable flux compression generator as well as a self-similar Noh-like solution and demonstrated convergence to the theoretical solution. We also showed examples of simulating complex three-dimensional pulsed power devices with this technique. We release our code implementation to the public.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy

We report on the improvement of the surface morphology of c-plane GaN films grown at high growth rates (~1 µm/h) using ammonia molecular beam epitaxy through a series of growth optimizations as well as the introduction of indium as a surfactant. The indium surfactant was expected to help with the adatom mobility and, thus, provide smoother growth surfaces. Through a combination of varying V/III ratios, In flux, and growth temperatures, an optimal condition for surface morphology, characterized by atomic force microscopy, was achieved. At higher Ga fluxes for fast growth rates (~1 µm/h and beam equivalent pressures of ~5 × 10 –7 Torr), higher ammonia flows were necessary to preserve the surface morphology. In addition, indium was an effective surfactant—reducing the roughness and improving the overall surface morphology. However, excessive indium causes the surface morphology to degrade, potentially due to the enhancement of the Ga desorption from the surface as a result of the reaction of indium with ammonia for high indium fluxes. The indium surfactant also resulted in a reduction of background Si impurity concentrations in the film. These effects allow for the growth of thick drift layers with low background dopant concentrations for vertical GaN power devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Bayesian inferences of electrical current delivered to shocked transmission lines

Small radius Bdot measurements of electrical current delivered by pulsed power devices are routinely compromised by electrode/convolute plasmas endemic to multiterawatt transmission lines. Inferences of delivered current unaffected by these issues have recently been obtained by numerically optimizing consistency between model predictions and local experimental velocimetry data, but these are only unique for shockless velocity profiles. In the paper we describe a more general Bayesian method capable of inferring current despite the presence of shocks. Additionally, we describe uncertainty estimates and use of the technique on experimental data. This technique is the first to provide uncertainty estimates on the full current trace delivered to an inertial confinement fusion target.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Acoustic and optical phonon frequencies and acoustic phonon velocities in Si-doped AlN thin films

We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metal–organic chemical vapor deposition on sapphire substrates. The Brillouin–Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ∼300 m/s at the doping level of 3 × 1019 cm−3. The knowledge of the acoustic phonon velocities can be used for the optimization of the ultra-wide bandgap semiconductor heterostructures and for minimizing the thermal boundary resistance of high-power devices.

Physics↗
DOE OSTI2025

Development and performance of high-temperature superconducting CORC ® cables with CFD REBCO tapes

Abstract Increasing the normal zone propagation velocity (NZPV) in superconducting cables based on rare earth barium copper oxide (REBCO) tapes is expected to cause a paradigm shift by enabling the development of faster and more reliable quench detection systems to mitigate the development of destructive hot spots. Furthermore, a higher NZPV is beneficial in terms of fault current limitation capabilities by accelerating the homogenization of the quench in superconducting power devices. One way envisioned to increase the NZPV of cables based on REBCO tapes is the current flow diverter (CFD) concept. A Conductor on Round Core (CORC ® ) cable made with CFD REBCO tapes, called CFD CORC ® cable, and a CORC ® cable made with regular REBCO tapes, were fabricated and tested. The critical current of the CFD and regular CORC ® cables were obtained at temperatures ranging from 67 to 77 K in self-field. Measurements showed that the NZPV was increased by a factor of 4–4.5 in the case of the CFD CORC ® cable. Furthermore, the results suggest that the NZPV depends only on the applied current, similar to what has been observed previously on single REBCO tapes. These results demonstrate the successful integration of CFD REBCO tapes in CORC ® cables, without compromising their superconducting properties or their enhanced NZPV. The possibility of enhancing the NZPV of REBCO-based cables could facilitate quench detection, which remains an important issue in HTS magnet applications. This advancement also holds promise for the fault current limitation functionality of CORC ® cables.

Ben Saâd, Haïfa (ORCID:0000000216205364)↗
DOE OSTI2026

Experimental investigation of H-mode pedestal turbulence using a charge exchange imaging diagnostic system at DIII-D

Microtearing modes (MTMs) (ω ~ ω de k θ ρ s ~ 0.1, k r ρ s ~ 0.3 – 1.0) are predicted to cause substantial electron thermal transport in the H-mode pedestal, limiting fusion performance on high-power devices. Localized 2D measurements of low-to-intermediate wavenumber density fluctuations in the edge of DIII-D H-mode plasmas suggest the presence of temporally intermittent or ‘bursting’ MTMs during the inter-ELM cycle in the steep gradient region. These measurements are obtained using a new intermediate radial resolution multichannel Charge eXchange Imaging (CXI) diagnostic that analyzes the intensity of the CVI emission at 529 nm. The mode is peaked near ρ = 0.97 with a radial full-width half maximum of 1.5–2.0 cm and a normalized density fluctuation amplitude peak of $\frac{dn_C}{n_C}$ ~ 5%, peaking near 60 kHz in the lab frame. The mode additionally features a broad spectral width from 30 to 180 kHz and propagates in the electron diamagnetic direction in the plasma frame. CXI measurements taken during discharges with high density and current ramps provide evidence that MTMs become unstable at finite collisionality and remain at nearly the same location in ρ-space despite scanning of rational surface position. This indicates that the location of the peak in the electron diamagnetic frequency is a stronger driving force than individual rational surfaces.

DIII-D↗
DOE OSTI2023

Computation of high-frequency magnetoelastic waves in layered materials

Here, the direct calculation of magnetoelastic wave dispersion in layered media is presented using an efficient, accurate computational technique. The governing, coupled equations for elasticity and magnetism, the Navier and Landau-Lifshitz equations, respectively, are linearized to form a quadratic eigenvalue problem that determines a complex web of wave-number–frequency dispersion branches and their corresponding mode profiles. Numerical discretization of the eigenvalue problem via a spectral collocation method (SCM) is employed to determine the complete dispersion maps for both a single, finite-thickness magnetic layer and a finite magnetic-nonmagnetic double-layer. The SCM, previously used to study elastic waves in nonmagnetic media, is fast, accurate, and adaptable to a variety of sample configurations and geometries. Emphasis is placed on the extremely high-frequency regimes being accessed in ultrafast magnetism experiments. The dispersion maps and modes provide insight into how energy propagates through the coupled system, including how energy can be transferred between elastic- and magnetic-dominated waves as well as between different layers. The numerical computations for a single layer are further understood by a simplified analytical calculation in the high-frequency, exchange-dominated regime where the resonance condition required for energy exchange (an anticrossing) between quasi-elastic and quasi-magnetic dispersion branches is determined. Nonresonant interactions are shown to be well approximated by the dispersion of uncoupled elastic and magnetic waves. The methods and results provide fundamental theoretical tools to model and understand current and future magnetic devices powering spintronic innovation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.

Porter, Matthew↗
DOE OSTI2023

Origin of Soft-Switching Output Capacitance Loss in Cascode GaN HEMTs at High Frequencies

Output capacitance (C OSS ) loss (E DISS ) is produced when the C OSS of a power device is charged and discharged, which ideally should be a lossless process. This loss was recently revealed to be a crucial concern for GaN high electron mobility transistors (HEMTs) in high-frequency soft-switching applications. Among various GaN devices, the composite-type, cascode GaN HEMT was reported to show the largest E DISS with a voltage dependence distinct from discrete GaN HEMTs. However, the physical origins of the EDISS in cascode GaN HEMTs remain unclear. This work fills this gap by identifying three loss components and, for the first time, experimentally quantifying them in the multi-MHz resonant switching. These loss components include a) the avalanche loss of Si MOSFET, b) the intrinsic E DISS of GaN HEMT, and c) the Si avalanche-induced GaN turn-ON loss. The last component was found to dominate E DISS at high voltage. By eliminating the Si avalanche and the associated loss components (a) and (c), the E DISS of cascode GaN HEMTs can be reduced by up to 75% at the price of an increase in output charge and switching transition time. Furthermore, these results provide new physical insights and practical guidelines to trim the soft-switching loss of cascode GaN HEMTs in high-frequency applications.

42 ENGINEERING↗
DOE OSTI2026

Are Capacity and Energy Loss Equivalent Metrics for Battery Aging Reporting?

Battery aging in research publications and manufacturer specification sheets for individual cells is commonly reported as capacity (Ah) versus cycle number. However, the key measured quantity in battery-powered devices is energy (Wh), which is derived from integrating capacity with voltage. In this work, we compare the rate of capacity and energy loss across a wide range of Li-ion single-cell cycling studies with different positive electrode chemistries, charge–discharge rates, and temperatures. We find that the relative rate of discharge energy loss varies with cycling conditions. For many cells cycled under moderate conditions, the rate of discharge energy fade is only slightly faster than the rate of discharge capacity fade. However, some cells demonstrated up to a 15% decline in cycle count when 80% energy retention rather than 80% capacity retention was used as the end-of-life metric. These results highlight the importance of reporting cell aging based on energy fade to avoid overestimating battery lifetime in full systems.

batteries↗
DOE OSTI2020

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

The precise patterning of front-side mesas, backside vias, and selective removal of ternary alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN, SiC) and ultrawide bandgap (high Al-content alloys, boron nitride, Ga2O3, diamond) semiconductor technologies. The plasma etching conditions used are generally ion-assisted because of the strong bond strengths in these materials, and this creates challenges for the choice of masks in order to have sufficient selectivity over the semiconductor and to avoid mask erosion and micromasking issues. It can also be challenging to achieve practical etch rates without creating excessive damage in the patterned surface. The authors review the optimum choices for plasma chemistries for each of the semiconductors and acknowledge the pioneering work of John Coburn, who first delineated the ion-assisted etch mechanism.

42 ENGINEERING↗
DOE OSTI2025

Ziti (Ziti Client) [SWR-25-91]

Ziti is a NOODLES client application for RealityKit-powered devices (specifically the Apple Vision Pro). NOODLES is a cross-platform/device/tool protocol for collaborative visualization. NOODLES was Developed at the National Renewable Energy Laboratory (NREL) as a capability of the Insight Center https://www.nrel.gov/computational-science/insight-center.html

Brunhart-Lupo, Nicholas [National Renewable Energy↗
DOE OSTI2021

FY2020 Batteries Annual Progress Report

This document summarizes the progress of VTO battery R&D projects supported during the fiscal year 2020 (FY 2020). In FY 2020, the DOE VTO battery R&D funding was approximately $110 million. Its R&D focus was on the development of high-energy batteries for EVs as well as very high-power devices for hybrid vehicles.

25 ENERGY STORAGE↗
DOE OSTI2024

FLEXO: A Portably Performant Code for Pulsed Power Target Physics

FLEXO (Flux-Limited Extended-MHD Ohm's Law) is a production-line multiphysics code developed at Sandia to enable more predictive modeling of target physics on pulsed-power devices. FLEXO uses an extended magnetohydrodynamics (XMHD) model which includes a generalized Ohm's law (GOL), an electron inertia term, and Hall physics. This report describes the code's numerical methods, its computational performance, and test problems of interest.

42 ENGINEERING↗