Search NASA⌕ Search

SEARCH · Search NASA

Results for “Power electronic substrate”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

An Acoustic Charge Transport Imager for High Definition Television Applications: Low-Voltage SAW Amplifiers on Multilayer GaAs/ZnO Substrates

This thesis addresses the acoustoelectric issues concerning the amplification of surface acoustic waves (SAWs) and the reflection of SAWs from slanted reflector gratings on GaAs, with application to a novel acoustic charge transport (ACT) device architecture. First a simple model of the SAWAMP was developed, which was subsequently used to define the epitaxially grown material structure necessary to provide simultaneously high resistance and high electron mobility. In addition, a segmented SAWAMP structure was explored with line widths on the order of an acoustic wavelength. This resulted in the demonstration of SAWAMPS with an order of magnitude less voltage and power requirements than previously reported devices. A two-dimensional model was developed to explain the performance of devices with charge confinement layers less then 0.5 mm, which was experimentally verified. This model was extended to predict a greatly increased gain from the addition of a ZnO overlay. These overlays were experimentally attempted, but no working devices were reported due to process incompatibilities. In addition to the SAWAMP research, the reflection of SAWs from slanted gratings on GaAs was also studied and experimentally determined reflection coefficients for both 45 deg grooves and Al stripes on GaAs have been reported for the first time. The SAWAMp and reflector gratings were combined to investigate the integrated ring oscillator for application to the proposed ACT device and design parameters for this device have been provided.

Hunt, W. D.↗
DOE OSTI2024

Spatially Precise Light‐Activated Dedoping in Wafer‐Scale MoS 2 Films

2D materials, particularly transition metal dichalcogenides (TMDCs), have shown great potential for microelectronics and optoelectronics. However, a major challenge in commercializing these materials is the inability to control their doping at a wafer scale with high spatial fidelity. Interface chemistry is used with the underlying substrate oxide and concomitant exposure to visible light in ambient conditions for photo-dedoping wafer scale MoS 2 . It is hypothesized that the oxide layer traps photoexcited holes, leaving behind long-lived electrons that become available for surface reactions with ambient air at sulfur vacancies (defect sites) resulting in dedoping. Additionally, high fidelity spatial control is showcased over the dedoping process, by laser writing, and fine control achieved over the degree of doping by modulating the illumination time and power density. This localized change in MoS 2 doping density is very stable (at least 7 days) and robust to processing conditions like high temperature and vacuum. The scalability and ease of implementation of this approach can address one of the major issues preventing the “Lab to Fab” transition of 2D materials and facilitate its seamless integration for commercial applications in multi-logic devices, inverters, and other optoelectronic devices.

14 SOLAR ENERGY↗
DOE OSTI2026

Ultrafast vertical photoconductive intrinsic diamond switch with high current (17.1 A at 1 kV)

Here, this Letter reports on a vertical, bulk-conducting photoconductive semiconductor switch (PCSS) fabricated on an intrinsic Type IIa single-crystal diamond substrate. Under near-bandgap excitation at 225 nm with a 20 μ J pulse, a strong photocurrent response of 17.1 A at 1 kV DC bias magnitude is obtained by (i) tuning the optical trigger wavelength to the “matched-absorption” window (224–235 nm) near the band edge, where the optical penetration depth becomes comparable to the 500 μ m substrate thickness, and (ii) choosing the bias polarity ensuring electron-dominant conduction, given that electrons have a higher mobility than holes in diamond. The PCSS has an area-normalized responsivity of 54.2 mA W −1 cm −2 and an effective on-resistance of 8.48 Ω, with a fast 90%–10% transient fall time of 25 ns, attributed to carrier sweep-out. These results support vertical, bulk-conducting intrinsic diamond PCSS as a promising platform for high-power optical switching and provide new insight into intrinsic photoconductivity in diamond.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1981

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗
NASA NTRS1987

Comparative performance of diffused junction indium phosphide solar cells

A comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.

Weinberg, I.↗
NASA NTRS2000

Effects of Conformal Coat on Tin Whisker Growth

A whisker from a tin plated part was blamed for the loss of a commercial spacecraft in 1998. Although pure tin finishes are prohibited by NASA, tin plated parts, such as hybrids, relays and commercial off the shelf (COTS) parts, are something discovered to have been installed in NASA spacecraft. Invariably, the assumption is that a conformal coat will prevent the growth of, or short circuits caused by, tin whiskers. This study measures the effect a Uralane coating has on the initiation and growth of tin whiskers, on the ability of this coating to prevent a tin whisker from emerging from the coating, and on the ability to prevent shorting. A sample of fourteen brass substrates (1 inch by 4 inches by 1/16 inch) were plated by two separate processes: half of the specimens were 'bright' tin plated directly over the brass substrate and half received a copper flash over the brass substrate prior to 'bright' tin plating. Each specimen was coated on one half of the substrate with three bi-directional sprays of Uralane 5750 to a nominal thickness of 25 to 75 micrometers (1 to 3 mils). Several specimens of both types, Cu and non-Cu flashed, were placed in an oven maintained at 50 C as others' work suggests that this is the optimal temperature for whisker formation. The remaining specimens were maintained at room ambient conditions. The surfaces of each specimen have been regularly inspected using both optical (15 to 400x power) and Scanning Electronic Microscopy (SEM). Many types of growths, including needle-like whiskers, first appeared approximately three months after plating on the non-conformally coated sides of all specimens. At four months, 4 to 5 times more growth sites were observed on the coated side; however, the density of growth sites on the non-conformally coated side has since increased rapidly, and now, at one year, is about the same for both sides. The density of growth sites is estimated at 90/sq mm with 30 percent of the sites growing whiskers (needle-like forms) with the potential to cause short circuit bridging. The average growth rate of the needle-like whiskers on the non-conformally coated areas is about 130 micrometers per year with some outliers reaching 800 micrometers after one year. It is more difficult to make growth measurements under the conformal coat. As yet no whiskers have been observed to penetrate through the coating surface, however, a number of tin nodules appear on the verge of breaking through the thinner regions of the coating surface. These domes are developing sharper and sharper tips, as if a growing whisker is about to push its way through a tough skin. Our observations are that the specimens with copper flash show a much lower density of nucleation sites and significantly slower whisker growth compared to the specimens that have only bright tin plating over brass. The specimens kept at room temperature have a higher whisker density than those stored at 50 C. This is an unexpected result and does not agree with the published findings of others. All of the whiskers originate from small surface defects (thin, tiny scratches) that appear over the entire surface of each specimen.

Kadesch, Jong S.↗
NASA NTRS2007

Lightweight, Flexible Solar Cells on Stainless Steel Foil and Polymer for Space and Stratospheric Applications

The availability of low-cost, lightweight and reliable photovoltaic (PV) modules is an important component in reducing the cost of satellites and spacecraft. In addition, future high-power spacecraft will require lightweight PV arrays with reduced stowage volume. In terms of the requirements for low mass, reduced stowage volume, and the harsh space environment, thin film amorphous silicon (a-Si) alloy cells have several advantages over other material technologies (1). The deposition process is relatively simple, inexpensive, and applicable to large area, lightweight, flexible substrates. The temperature coefficient has been found to be between -0.2 and -0.3 %/degC for high-efficiency triple-junction a-Si alloy cells, which is superior for high temperature operation compared to crystalline Si and triple-junction GaAs/InGaP/Ge devices at 0.53 %/degC and 0.45 %/degC, respectively (2). As a result, the reduction in efficiency at high temperature typical in space conditions is less for a-Si alloy cells than for their crystalline counterparts. Additionally, the a-Si alloy cells are relatively insensitive to electron and proton bombardment. We have shown that defects that are created by electrons with energies between 0.2 to 2 MeV with fluence up to 1x10(exp 15) e/sq cm and by protons with energy in the range 0.3 MeV to 5 MeV with fluence up to 1x10(exp 13) p/sq cm can be annealed out at 70 C in less than 50 hours (1). Further, modules incorporating United Solar s a-Si alloy cells have been tested on the MIR space station for 19 months with only minimal degradation (3). For stratospheric applications, such as the high altitude airship, the required PV arrays are typically of considerably higher power than current space arrays. Airships typically have a large area available for the PV, but weight is of critical importance. As a result, low cost and high specific power (W/kg) are key factors for airship PV arrays. Again, thin-film a-Si alloy solar cell technology is well suited to such applications.

Beernink, Kevin↗
DOE OSTI2025

Tuning Interface Electronic Properties via Chiral Two‐Dimensional Metal‐Organic Frameworks

Control over structural symmetries in nanomaterials offers a powerful approach to engineer electronic properties. For instance, breaking of mirror symmetries in two-dimensional (2D) materials with a hexagonal lattice can lead to nontrivial electronic topologies and correlated-electron phenomena. Yet, the impact of structural chirality on the electronic properties of 2D materials and interfaces remains underexplored. Here, how chiral phases of a 2D metal-organic framework (MOF) with a hexagonal lattice—consisting of hexaazatriphenylene molecules coordinated to Cu atoms—scatter, confine, and perturb the Shockley surface state (SS) electrons of an underlying Ag(111) substrate is investigated. Via low-temperature scanning tunneling microscopy and spectroscopy, noncontact atomic force microscopy, and numerical calculations based on an electronic plane-wave expansion method, modifications of the Ag(111) SS band structure are shown and quantified, including gap openings and lifts of band degeneracies, driven exclusively by the structural chirality of the 2D MOF phases. These findings highlight how structural symmetries, in particular chirality, affect electronic states at material interfaces, expanding on the toolkit for designing 2D materials with tailored electronic properties.

band structure engineering↗
NASA NTRS1996

An Assessment of Molten Metal Detachment Hazards During Electron Beam Welding in the Space Shuttle Bay at LEO for the International Space Welding Experiment

In 1997, the United States [NASA] and the Paton Electric Welding Institute are scheduled to cooperate in a flight demonstration on the U.S. Space Shuttle to demonstrate the feasibility of welding in space for a possible repair option for the International Space Station Alpha. This endeavor, known as the International Space Welding Experiment (ISWE), will involve astronauts performing various welding exercises such as brazing, cutting, welding, and coating using an electron beam space welding system that was developed by the E.O. Paton Electric Welding Institute (PWI), Kiev Ukraine. This electron beam welding system known as the "Universal Weld System" consists of hand tools capable of brazing, cutting, autogeneous welding, and coating using an 8 kV (8000 volts) electron beam. The electron beam hand tools have also been developed by the Paton Welding Institute with greater capabilities than the original hand tool, including filler wire feeding, to be used with the Universal Weld System on the U.S. Space Shuttle Bay as part of ISWE. The hand tool(s) known as the Ukrainian Universal Hand [Electron Beam Welding] Tool (UHT) will be utilized for the ISWE Space Shuttle flight welding exercises to perform welding on various metal alloy samples. A total of 61 metal alloy samples, which include 304 stainless steel, Ti-6AI-4V, 2219 aluminum, and 5456 aluminum alloys, have been provided by NASA for the ISWE electron beam welding exercises using the UHT. These samples were chosen to replicate both the U.S. and Russian module materials. The ISWE requires extravehicular activity (EVA) of two astronauts to perform the space shuttle electron beam welding operations of the 61 alloy samples. This study was undertaken to determine if a hazard could exist with ISWE during the electron beam welding exercises in the Space Shuttle Bay using the Ukrainian Universal Weld System with the UHT. The safety issue has been raised with regard to molten metal detachments as a result of several possible causes such as welder procedural error, externally applied impulsive forces(s), filler wire entrainment and snap-out, cutting expulsion, and puddle expulsion. Molten metal detachment from either the weld/cut substrate or weld wire could present harm to a astronaut in the space environment it the detachment was ti burn through the fabric of the astronaut Extravehicular Mobility Unit (EMC). In this paper an experimental test was performed in a 4 ft. x 4 ft. vacuum chamber at MSFC enabling protective garment to be exposed to the molten metal drop detachments to over 12 inches. The chamber was evacuated to vacuum levels of at least 1 x 10(exp -5) torr (50 micro-torr) during operation of the 1.0 kW Universal Hand Tool (UHT). The UHT was manually operated at the power mode appropriate for each material and thickness. The space suit protective welding garment, made of Teflon fabric (10 oz. per yard) with a plain weave, was placed on the floor of the vacuum chamber to catch the molten metal drop detachments. A pendulum release mechanism consisting of four hammers, each weighing approximately 3.65 lbs, was used to apply an impact forces to the weld sample/plate during both the electron beam welding and cutting exercises. Measurements were made of the horizontal fling distances of the detached molten metal drops. The volume of a molten metal drop can also be estimated from the size of the cut. Utilizing equations, calculations were made to determine chande in surafec area (Delat a(surface)) for 304 stainless steel for cutting based on measurements of metal drop sizes at the cut edges. For the cut sample of 304 stainless steel based on measurement of the drop size at the edge, Delta-a(surface) was determined to be 0.0054 2 in . Calculations have indicated only a small amount of energy is required to detach a liquid metal drop. For example, approximately only 0.000005 ft-lb of energy is necessary to detach a liquid metal steel drop based on the above theoretical analysis. However, some of the energy will be absorbed by the plate before it reaches the metal drop. Based on the theoretical calculations, it was determined that during a weld cutting exercise, the titanium alloy would be the most difficult to detach molten metal droplets followed by stainless steel and then by aluminum. The results of the experimental effort have shown that molten metal will detach if large enough of a hammer blow is applied to the weld sample plate during the full penetration welding and cutting exercises. However, no molten metal detachments occurred as a result of the filler wire snap-out tests from the weld puddle since it was too difficult to cause the metal to flick-out from the pool. Molten metal detachments, though not large in size, did result from the direct application of the electron beam on the end of the filler weld wire.

Fragomeni, James M.↗
NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗
NASA NTRS2015

Space Environment Testing of Photovoltaic Array Systems at NASA's Marshall Space Flight Center

CubeSats, Communication Satellites, and Outer Planet Science Satellites all share one thing in common: Mission success depends on maintaining power in the harsh space environment. For a vast majority of satellites, spacecraft power is sourced by a photovoltaic (PV) array system. Built around PV cells, the array systems also include wiring, substrates, connectors, and protection diodes. Each of these components must function properly throughout the mission in order for power production to remain at nominal levels. Failure of even one component can lead to a crippling loss of power. To help ensure PV array systems do not suffer failures on-orbit due to the space environment, NASA's Marshall Space Flight Center (MSFC) has developed a wide ranging test and evaluation capability. Key elements of this capability include: Testing: a. Ultraviolet (UV) Exposure b. Charged Particle Radiation (Electron and Proton) c. Thermal Cycling d. Plasma and Beam Environments Evaluation: a. Electrostatic Discharge (ESD) Screening b. Optical Inspection and easurement c. PV Power Output including Large Area Pulsed Solar Simulator (LAPSS) measurements This paper will describe the elements of the space environment which particularly impact PV array systems. MSFC test capabilities will be described to show how the relevant space environments can be applied to PV array systems in the laboratory. A discussion of MSFC evaluation capabilities will also be provided. The sample evaluation capabilities offer test engineers a means to quantify the effects of the space environment on their PV array system or component. Finally, examples will be shown of the effects of the space environment on actual PV array materials tested at MSFC.

Schneider, Todd A.↗
NASA NTRS1993

Analytical and experimental investigation of the feasibility of accelerated lifetime testing of materials exposed to an atomic oxygen beam

The interaction of atomic particles with surfaces is of both scientific and technological interest. Past work emphasizes the measurement of high-energy sputtering yields. Very little work utilized low-energy beams for which chemical and electronic effects can be important. Even less work has been carried out using well-defined low-energy projectiles. The use of low-energy, reactive projectiles permits one to investigate surface processes that have not been well characterized. As the energy of the projectile decreases, the collisional cascades and spikes, that are common for high-energy projectiles, become less important, and chemical and electronic effects can play a significant role. Aspects of particle-surface interactions are of concern in several areas of technology. For example, the erosion, desorption, and glow of surfaces of spacecraft in orbit are important in the arena of space technology. The materials studied under this contract are of possible use on the exterior portions of the power generation system of Space Station Freedom. Under the original designs, Space Station Freedom's power generation system would generate potential differences on the surface as high as 200 volts. Ions in the plasma that often surround orbiting vehicles would be accelerated by these potentials leading to bombardment and erosion of the exposed surfaces. The major constituent of the atmosphere, approximately 90 percent, in the low earth orbit region is atomic oxygen. Since atomic oxygen is extremely reactive with most materials, chemical effects can arise in addition to the physical sputtering caused by the acceleration of the oxygen ions. Furthermore, the incident oxygen ions can remain embedded in the exposed surfaces, altering the chemical composition of the surfaces. Since the effective binding energy of a chemically altered surface can be quite different from that of the pure substrate, the sputtering yield of a chemically altered surface is usually different also. The low-energy O+ sputtering yield measurements, reported here, will help quantify the erosion rates for materials exposed to the low-earth orbit environment. These measurements are of technological importance in another respect. In most surface analysis techniques, a surface is bombarded with ions, electrons or photons. Information concerning the structure of the surface and near-surface bulk, abundance of impurities and defects, as well as other surface properties are obtained either from the desorbed species or from the scattered projectiles. Because of their low penetration depth, low-energy ions provide an advantage over other techniques because they provide information that is more indicative of conditions on the surface rather than integrated effects arising from deeper in the bulk. A better understanding of the microscopic processes involved in these interactions is not only of basic scientific interest, but will also aid the scientific community by increasing the accuracy and usefulness of these surface analysis techniques.

Albridge, Royal↗
NASA NTRS1981

Voltage gradients in solar array cavities as possible breakdown sites in spacecraft-charging-induced discharges

A possible explanation for environmentally-induced discharges on geosynchronous satellites exists in the electric fields formed in the cavities between solar cells - the small gaps formed by the cover slides, solar cells, metallic interconnects and insulating substrate. When exposed to a substorm environment, the cover slides become less negatively charged than the spacecraft ground. Hence, it is possible for metallic surfaces (usually silver mesh) to be at a negative potential in a cavity that has a 'positive' surface above it. If the resultant electric field becomes large enough, then the interconnect could emit electrons (probably by field emission) which could be accelerated to space by the positive voltage on the covers. An experimental study was connected using a small solar array segment in which the interconnect potential was controlled by a power supply while the cover slides were irridated by monoenergetic electrons. It was found that discharges could be triggered when the interconnect potential became at least 500 volts negative with respect to the cover slides. Analytical modeling of satellites exposed to substorm environments indicates that such gradients are possible. Therefore, it appears that this trigger mechanism for discharges is possible. Details of the experiment and modeling study are presented.

Stevens, N. J.↗
DOE OSTI2025

Effect of pattern transfer process on roughness of block copolymer patterns from directed self-assembly

Block copolymer-directed self-assembly (DSA) remains promising for improving pattern quality and reducing the stochastic variations that challenge high numerical aperture extreme ultraviolet lithography. Equally critical is refining pattern transfer methods for accurately transferring the rectified DSA features to the underlying substrate. We compare two atomic layer deposition (ALD)-based techniques: sequential infiltration synthesis (SIS) and dry liftoff, applied to polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) DSA patterns. Both methods utilize aluminum oxide hard masks, with one synthesized through infiltration into the PMMA domains and the other through conformal ALD coating. High-resolution scanning electron micrographs were analyzed to measure line edge, width, and placement roughness for both the line (PMMA) and space (PS) features. Although both methods yielded similar overall 3σ rms roughness, they differed significantly in the frequency-dependent power spectral density (PSD) profiles. SIS reduced line placement roughness at length scales associated with the polymer pitch, but increased space width roughness at low frequencies, whereas dry liftoff mimicked the frequency content of the original guiding pattern. This study underscores the importance of PSD evaluation in selecting optimal pattern transfer strategies for specific applications.

Block copolymers↗
NASA NTRS2002

Methods for growth of relatively large step-free SiC crystal surfaces

A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

Neudeck, Philip G.↗
NASA NTRS1999

MEMS Using SOI Substrate

At NASA, the focus for smaller, less costly missions has given impetus for the development of microspacecraft. MicroElectroMechanical System (MEMS) technology advances in the area of sensor, propulsion systems, and instruments, make the notion of a specialized microspacecraft feasible in the immediate future. Similar to the micro-electronics revolution,the emerging MEMS technology offers the integration of recent advances in micromachining and nanofabrication techniques with microelectronics in a mass-producible format,is viewed as the next step in device and instrument miniaturization. MEMS technology offers the potential of enabling or enhancing NASA missions in a variety of ways. This new technology allows the miniaturization of components and systems, where the primary benefit is a reduction in size, mass and power. MEMS technology also provides new capabilities and enhanced performance, where the most significant impact is in performance, regardless of system size. Finally,with the availability of mass-produced, miniature MEMS instrumentation comes the opportunity to rethink our fundamental measurement paradigms. It is now possible to expand our horizons from a single instrument perspective to one involving multi-node distributed systems. In the distributed systems and missions, a new system in which the functionality is enabled through a multiplicity of elements. Further in the future, the integration of electronics, photonics, and micromechanical functionalities into "instruments-on-a-chip" will provide the ultimate size, cost, function, and performance advantage. In this presentation, I will discuss recent development, requirement, and applications of various MEMS technologies and devices for space applications.

Tang, Tony K.↗
DOE OSTI2026

Engineering Thermally Resilient and Kinetically Active Reversible Protonic Ceramic Cells via Interfacial Design

Achieving concurrent fast electrode kinetics and long-term thermo-mechanical durability remains a critical challenge for reversible protonic ceramic electrochemical cells (R-PCECs). Herein, we report an interfacial engineering strategy that integrates a perovs.kite-type PrBaRu0.1Co1.9O5+δ (PBRC) nanoparticle layer onto a PrBa0.5Sr0.5Co1.5Fe0.5O5+δ (PBSCF) substrate (PBRC-PBSCF), together with a modified pellet-assisted sintering approach to fabricate dense BaZr0.4Ce0.4Y0.1Yb0.1O3-δ (BZCYYb4411) electrolytes. The in situ reconstructed heterointerface enhances oxygen reduction/evolution reaction (ORR/OER) kinetics, promotes H2O adsorption/dissociation, and improves steam tolerance, as verified by electrochemical measurements and interfacial microstructural analyses. Density functional theory reveals that Ru-induced electronic modulation at the PBRC-PBSCF interface lowers the energy of oxygen vacancy formation and optimizes the position of the O 2p band center, thereby accelerating oxygen redox kinetics and stabilizing the interface. The resulting R-PCECs deliver an excellent peak power density of 1.112 W cm−2 and an electrolysis current density of −1.257 A cm−2 at 1.3 V in 3% H2O wet air at 600°C, with a reasonable faradaic efficiency. Furthermore, the cells demonstrate excellent stability, sustaining 100 h of thermal cycling (400–600°C, 200°C h−1) in both fuel cell and electrolysis modes, with 600 h of stability in electrolysis mode (600°C, −0.5 to −2 A cm−2).

30 DIRECT ENERGY CONVERSION↗
NASA NTRS2000

All-Metal Magnetic RAM

The factors that enter into the development of an all-metal, nonvolatile magnetic RAM, in which multilayer giant magnetoresistive films are used for all functions - storage, readout, and support electronics - are described. Four significant characteristics are expected to favor all-metal over hybrid magnetic RAM. First, silicon-technology fabrication requires a large number of masking steps, including complex ones such as ion implantation. Conversely, all-metal technology is inherently simple: fewer masking steps, no doping, scaling to lithographic limits, very little operating power. Second, the all-metal footprint is significantly smaller than the hybrid one. Third, an all-metal RAM is expected to be able to be miniaturized to lithographic limits; miniaturization of hybrid magnetic RAMs is likely to be limited by the semiconductor circuitry. Finally, semiconductor processing and magnetic processing in MRAM are done separately because the former requires high temperatures, whereas magnetic fabrication is a low-temperature process. By contrast, because both GMR electronics and the memory elements are made of the same materials, the two major components are deposited and patterned concurrently on the same substrate.

Torok, E. J.↗