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At least 163 records · Page 9

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NASA NTRS1982

The effect of Ta2O5 on the interaction between silicon and its contact metallization

Evidence is presented showing that the presence of the commonly used antireflection coating material, Ta2O5, on the free surface of contact metallization can either suppress or enhance, depending on the system, the interaction that takes place at elevated temperatures between the metallization and the underlying silicon. The Ta2O5 layer is shown to suppress both the generation and the annihilation of vacancies at the metal free surface which are necessary to support metal-silicon interactions. It is also shown that the mechanical condition of the free metal surface has a significant effect on the passivating ability of the Ta2O5 layer.

Weizer, V. G.↗

NASA NTRS1982

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model that explains the flat-spot power loss phenomenon is presented. Evidence suggests that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the P-N junction is destroyed and replaced with a metal semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallization are shown along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗

NASA NTRS1982

Theoretical Model of the Effect of Crack Tip Blunting on the Ultimate Tensile Strength of Welds in 2219-T87 Aluminum

A theoretical model representing blunting of a crack tip radius through diffusion of vacancies is presented. The model serves as the basis for a computer program which calculates changes, due to successive weld heat passes, in the ultimate tensile strength of 2219-T81 aluminum. In order for the model to yield changes of the same order in the ultimate tensile strength as that observed experimentally, a crack tip radius of the order of .001 microns is required. Such sharp cracks could arise in the fusion zone of a weld from shrinkage cavities or decohered phase boundaries between dendrites and the eutectic phase, or, possibly, from plastic deformation due to thermal stresses encountered during the welding process. Microstructural observations up to X2000 (resolution of about .1 micron) did not, in the fusion zone, show structural details which changed significantly under the influence of a heat pass, with the exception of possible small changes in the configuration of the interdendritic eutectic and in porosity build-up in the remelt zone.

Beil, R. J.↗

NASA NTRS1983

Radiationless transitions to atomic M 1,2,3 shells - Results of relativistic theory

Radiationless transitions filling vacancies in atomic M1, M2, and M3 subshells have been calculated relativistically with Dirac-Hartree-Slater wave functions for ten elements with atomic numbers 67-95. Results are compared with those of nonrelativistic calculations and experiment. Relativistic effects are found to be significant. Limitations of an independent-particle model for the calculation of Coster-Kronig rates are noted.

Chen, M. H.↗

NASA NTRS1983

Core level excitation of simple gases

The ionization of simple gases by electron bombardment exhibits distinct resonances at electron energies slightly below the core level binding energies of the atomic constituents of the gas. A vacancy in an inner shell of the atom may recombine by a radiationless Auger process, thus leaving the molecule in a singly or higher ionized state. These ions are easily collected and the threshold resonances for excitation are evident in the second derivative of the ion yield plotted as a function of the energy of the electron beam. By using a mixture of gases, such as CO and CO2, it is possible to measure relative chemical shifts of the C and O 1s thresholds. In this case the C 1s threshold is 3.9 eV lower in CO than in CO2, and the O 1s threshold is 2.7 eV lower in CO than in CO2. The feasibility of constructing a simple analyzer based on this technique will be discussed to supplement conventional mass spectrometer analysis of gas composition.

Zhang, A.↗

NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗

NASA NTRS1984

Models of Rapid Solidification

Laser annealing studies provide much information on various consequences of rapid solidification, including the trapping of impurities in the crystal, the generation of vacancies and twins, and on the fundamental limits to the speed of the crystal-melt interface. Some results obtained by molecular dynamics methods of the solidification of a Lennard-Jones liquid are reviewed. An indication of the relationship of interface speed to undercooling for certain materials can be derived from this model. Ising model simulations of impurity trapping in silicon are compared with some of the laser annealing results. The consequences of interface segregation and atomic strain are discussed.

Gilmer, G. H.↗

NASA NTRS1984

Cell and defect behavior in lithium-counterdoped solar cells

Some n(+)/p cells in which lithium is introduced as a counterdopant, by ion-implantation, into the cell's boron-doped p-region were studied. To determine if the cells radiation resistance could be significantly improved by lithium counterdoping. Defect behavior was related to cell performance using deep level transient spectroscopy. Results indicate a significantly increased radiation resistance for the lithium counterdoped cells when compared to the boron doped 1 ohm-cm control cell. The increased radiation resistance of the lithium counterdoped cells is due to the complexing of lithium with divacancies and boron. It is speculated that complexing with oxygen and single vacancies also contributes to the increased radiation resistance. Counterdoping silicon with lithium results in a different set of defects.

Weinberg, I.↗

NASA NTRS1984

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗

NASA NTRS1984

An atomistic model of slip formation

The results of an atomistic model for the simulation of the early stages of crack initiation in a two-dimensional triangular lattice are presented. In the current model, each particle in the system is treated discretely and assumed to be interacting with the surrounding particles via Lennard-Jones potentials. A uniaxial load (in incremental elongations) is applied to the rectangular two-dimensional slab in either the x or the y direction. After each incremental elongation the system is equilibrated using a static method. Initially, elastic behavior in the x and y directions is observed. Continued elongation results in plastic deformation. In lattices with point defects, the defects first move to the surface, creating vacancies which trigger plastic deformation.

Halicioglu, T.↗

NASA NTRS1982

On the behaviour and origin of the major deep level (EL2) in GaAs

In an extensive crystal growth and characterization study of Bridgman-grown GaAs it was established that the following factors affect the concentration of the EL2 level: (1) the As pressure during growth; (2) the partial pressure of Ga2O; (3) the concentration of shallow donors and acceptors; and (4) the post-growth cooling cycle. The role of these factors is qualitatively and quantitatively explained by attributing the 0.82 eV donor state to the antisite defect As-sub-Ga formed as a result of Ga-vacancy migration during the post-growth cooling of the crystals.

Lagowski, J.↗

NASA NTRS1982

Design principles for high efficiency small-grain polysilicon solar cells, with supporting experimental studies

Design principles suggested here aim toward high conversion efficiency (greater than 15 percent) in polysilicon cells. The principles seek to decrease the liabilities of both intragranular and grain-boundary-surface defects. The advantages of a phosphorus atom concentration gradient in a thin (less than 50 microns) base of a p(+)/n(x)/n(+) drift-field solar cell, which produces favorable gradients in chemical potential, minority-carrier mobility and diffusivity, and recombination lifetime (via phosphorus gettering) are suggested. The degrading effects of grain boundaries are reduced by these three gradients and by substituting atoms (P, H, F or Li) for vacancies on the grain-boundary surface. From recent experiments comes support for the benefits of P diffusion down grain boundaries and, for quasi-grain-boundary-free and related structures. New analytic solutions for the n(x)-base include the effect of a power-law dependence between P concentration and lifetime. These provide an upper-bound estimate on the open circuit voltage. Finite-difference numerical solutions of the six Shockley equations furnish complete information about all solar-cell parameters and add insight concerning design.

Lindholm, F. A.↗

NASA NTRS1984

Formation of ion damage tracks

A new model is proposed to explain both localized damage regions and preferential etching of damage tracks caused by the passage of energetic ions in insulators. The formation of each region of extended defects is initiated by the Auger decay of a vacancy produced in an inner electronic shell of an atom of the insulator by an incident ion. This decay produces an intense source of ionization within a small volume around the decaying atom, which causes decomposition of the material in a manner similar to that observed in pulsed laser irradiation. The resulting chemical or crystalline modification of the material is the latent track, which can be preferentially etched due to its changed structure.

Tombrello, T. A.↗

NASA NTRS1984

Hydrothermal alteration of CM carbonaceous chondrites: Implications of the identification of tochilinite as one type of meteoritic PCP

Poorly characterized phases (PCP's) constitute up to 30 volume percent of some CM carbonaceous chondrites, and are therefore an important key to an understanding of the physico-chemical conditions attending matrix evolution. An iron rich form of the terrestrial phase tochilinite was recently identified as a common type of PCP. Tochilinite has the general formula 6Fe(0.9)S.5(Mg,Fe)(OH)2 and consists of alternating machinawite (FeS) and brucite ((Mg,Fe)(OH)2) sheets, with iron vacancies in the sulfide sheets. In iron rich tochilinite, ferrous hydroxide, called amakinite, replaces brucite. If CM carbonaceous kchondrites have underdone hydrothermal alteration, iron rich tochilinite, at least, probably grew from aqueous solutions characterized by low FO2, high FS2, pH 10 to 12, and at a temperature at or below 170 C.

Zolensky, M. E.↗

NASA NTRS1985

Crystal Chemistry of Meteoritic Hibonites

The characteristics of cation vacancies and site occupancies of natural hibonites in meteors are discussed. Note is taken of the effect of the specific locations of the hibonites in the matrices on the crystal chemistry, electronic stabilities, and spectral features of the metal ions which replace the Al(3+). Hibonites form beta-alumina hexagonal cells with 26 cation sites. Fe cations are found in octahedral, tetrahedral, and five-fold coordinates. Fe(2+) is found in face-shared Al(3) octahedra, a siting explained in terms of ionic radius and crystal field stabilization energy criteria. Spectral colors are attributed to V(3+) and Ti(3+) field transitions at 400 and 700 nm, respectively, although the 700 nm line may arise from transitions of Ti(3+) to Ti(4+) or Fe(2+) to Fe(3+) during heating. Excesses of Mg-26 can be traced to decay of nebular Al-26.

Burns, R. G.↗

NASA NTRS1985

Current understanding of point defects and diffusion processes in silicon

The effects of oxidation of Si which established that vacancies (V) and Si self interstitials (I) coexist in Si at high temperatures under thermal equilibrium and oxidizing conditions are discussed. Some essential points associated with Au diffusion in Si are then discussed. Analysis of Au diffusion results allowed a determination of the I component and an estimate of the V component of the Si self diffusion coefficient. A discussion of theories on high concentration P diffusion into Si is then presented. Although presently there still is no theory that is completely satisfactory, significant progresses are recently made in treating some essential aspects of this subject.

Tan, T. Y.↗

NASA NTRS1984

Crystal chemistry of meteoritic hibonites

The characteristics of cation vacancies and site occupancies of natural hibonites in meteors are discussed. Note is taken of the effect of the specific locations of the hibonites in the matrices on the crystal chemistry, electronic stabilities, and spectral features of the metal ions which replace the Al(3+). Hibonites form beta-alumina hexagonal cells with 26 cation sites. Fe cations are found in octahedral, tetrahedral, and five-fold coordinations. Fe(2+) is found in face-shared Al(3) octahedra, a siting explained in terms of ionic radius and crystal field stabilization energy criteria. Spectral colors are attributed to V(3+) and Ti(3+) field transitions at 400 and 700 nm, respectively, although the 700 nm line may arise from transitions of Ti(3+) to Ti(4+) or Fe(2+) to Fe(3+) during heating. Excesses of Mg-26 can be traced to decay of nebular Al-26.

Burns, R. G.↗

NASA NTRS1985

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Li, S. B.↗