Search NASA⌕ Search

SEARCH · Search NASA

Results for “SILICON ALLOY”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Ultra-low thermal resistance and pressure drop copper and copper-tungsten diamond-shaped pin fin cold plates for liquid cooling of electronics

Modern and future data centers face increasing cooling challenges due to increasing chip thermal design power and die size, along with the need to reduce energy consumption used for cooling. High performance cooling solutions that maintain a low chip junction temperature are needed to ensure electronics reliability. This work develops an ultra-low thermal resistance and low pressure drop 75 mm × 75 mm cold plate, intended for next-generation electronics cooling. The cold plate features an array of diamond-shaped pin fins and integrated copper tungsten heat spreader, selected for its low coefficient of thermal expansion which reduces thermomechanical deformation and allows for closer integration of the cold plate with silicon dies. Starting with 300 candidate designs, three-dimensional computational fluid dynamics simulations predict the thermal-hydraulic performance of cold plate subsections. The highest performing geometries are evaluated with high fidelity simulations. Four cold plates are manufactured for experiments: three with diamond-shaped pin fins and one with straights fins for comparison purposes. The cold plates are fabricated from copper-tungsten (CuW), copper (Cu), or aluminum-silicon-magnesium alloy (AlSi10Mg). The diamond-shaped pin fins achieve a roughly 15 % lower thermal resistance compared to the conventional straight fin microchannel. The highest performing design achieves a chip-to-coolant (including thermal interface material) thermal resistance of 9.0 K/kW in CuW and 6.9 K/kW in Cu under a 1 kW heat load with an inlet-to-outlet pressure drop of 9.0 kPa and water as the working fluid. This work demonstrates ultra-low thermal resistance and pressure drop cold plates for large die, high heat load applications, and shows that CuW is an attractive cold plate material for improved reliability in next generation data center cooling.

Coefficient of thermal expansion↗
DOE OSTI2025

Sensitized Near-Infrared Emission of SiGe Nanocrystals via Heterostructuring with Quasi Two-Dimensional Perovskite

The near-infrared (NIR) emission of silicon–germanium alloy nanocrystals (SiGe NCs) was sensitized by heterostructuring with a quasi two-dimensional (Q-2D) perovskite (CsPbBr 3 blended with butylammonium bromide (BABr)). Colloidal SiGe NCs were synthesized by using a nonthermal plasma method with chloride precursors. As-synthesized SiGe NCs showed no detectable photoluminescence (PL). Embedding the SiGe NCs within the perovskite matrix via spin coating led to a heterostructure exhibiting dual emissions: green emission at 520 nm from the perovskite and NIR emission at 1035 nm from the SiGe NCs. Time-integrated and resolved PL measurements and transient absorption spectroscopy revealed energy transfer from the perovskite to the SiGe NCs, which sensitized the NIR emission from the SiGe NCs and quenched the green PL for the perovskite. These results demonstrate that Ge alloying can effectively tune the bandgap of Si NCs and highlight the feasibility of heterostructuring perovskites and photoluminescent NCs to enhance or activate their PL. In conclusion, this approach broadens their potential applications in the NIR region.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Empirical Investigation of Properties for Additive Manufactured Aluminum Metal Matrix Composites

Laser additive manufacturing with mixed powders of aluminum alloy and silicon carbide (SiC) or boron carbide (B4C) is investigated in this experiment. With various mixing ratios of SiC/Al to form metal matrix composites (MMC), their mechanical and physical properties are empirically investigated. Parameters such as laser power, scan speed, scan pattern, and hatching space are optimized to obtain the highest density for each mixing ratio of SiC/Al. The mechanical and thermal properties are systematically investigated and compared with and without heat treatment. It shows that 2 wt% of SiC obtained the highest strength and Young’s modulus. Graded composite additive manufacturing (AM) of MMC is also fabricated and characterized. Various types of MMC devices, such as heat sink using graded SiC MMC and grid type three-dimensional (3D) neutron collimators using boron carbide (B4C), were also fabricated to demonstrate their feasibility for applications.

36 MATERIALS SCIENCE↗
NASA NTRS1978

New alloys to conserve critical elements

Based on availability of domestic reserves, chromium is one of the most critical elements within the U.S. metal industry. New alloys having reduced chromium contents which offer potential as substitutes for higher chromium containing alloys currently in use are being investigated. This paper focuses primarily on modified Type 304 stainless steels having one-third less chromium, but maintaining comparable oxidation and corrosion properties to that of type 304 stainless steel, the largest single use of chromium. Substitutes for chromium in these modified Type 304 stainless steel alloys include silicon and aluminum plus molybdenum.

Stephens, J. R.↗
NASA NTRS1983

Sublimation measurements and analysis of high temperature thermoelectric materials and devices

High temperature thermoelectric device sublimation effects are compared for rare earth sulfides, selenides, and state-of-the-art Si-Ge alloys. Although rare earth calcogenides can potentially exhibit superior sublimation characteristics, the state-of-the-art Si-Ge alloy with silicon nitride sublimation-inhibitive coating has been tested to 1000 C. Attention is given to the ceramic electrolyte cells, forming within electrical and thermal insulation, which affect leakage conductance measurements in Si-Ge thermoelectric generators.

Shields, V.↗
NASA NTRS1984

Development of advanced thermoelectric materials

The development of an advanced thermoelectric material for radioisotope thermoelectric generator (RTG) applications is reported. A number of materials were explored. The bulk of the effort, however, was devoted to improving silicon germanium alloys by the addition of gallium phosphide, the synthesis and evaluation of lanthanum chrome sulfide and the formulation of various mixtures of lanthanum sulfide and chrome sulfide. It is found that each of these materials exhibits promise as a thermoelectric material.

Source record↗
NASA NTRS1986

A new chromium carbide-based tribological coating for use to 900 deg C with particular reference to the Stirling engine

A new chromium carbide-based coating (PS 200) is described. This coating is shown to have good friction and wear properties over a wide temperature range. A nickel alloy-bonded chromium carbide coating was used as a baseline material for comparison with experimental formulated coatings. Coatings were plasma sprayed onto metal disks, then diamond ground to a thickness of 0.025 cm. Friction and wear were determined using a pin on disk tribometer at temperatures from 25 to 900 C in hydrogen, helium, and air. Pin materials included several metallic alloys and silicon carbide. It was found that appropriate additions of metallic silver and of barium fluoride/calcium fluoride eutectic to the baseline carbide composition significantly reduced friction coefficients while preserving, and in some cases, even enhancing wear resistance. The results of this study demonstrate that PS 200 is a promising coating composition to consider for high temperature aerospace and advanced heat engine applications. The excellent results in hydrogen make this coating of particular interest for use in the Stirling engine.

Sliney, H. E.↗
NASA NTRS1986

Fatigue crack layer propagation in silicon-iron

Fatigue crack propagation in metal is almost always accompanied by plastic deformation unless conditions strongly favor brittle fracture. The analysis of the plastic zone is crucial to the understanding of crack propagation behavior as it governs the crack growth kinetics. This research was undertaken to study the fatigue crack propagation in a silicon iron alloy. Kinetic and plasticity aspects of fatigue crack propagation in the alloy were obtained, including the characterization of damage evolution.

Birol, Y.↗
NASA NTRS1986

A new chromium carbide-based tribological coating for use to 900 C with particular reference to the Stirling engine

A new chromium carbide-based coating (PS 200) is described. This coating is shown to have good friction and wear properties over a wide temperature range. A nickel alloy-bonded chromium carbide coating was used as a baseline material for comparison with experimentally formulated coatings. Coatings were plasma sprayed onto metal disks, then diamond ground to a thickness of 0.025 cm. Friction and wear were determined using a pin on disk tribometer at temperatures from 25 to 900 C in hydrogen, helium, and air. Pin materials included several metallic alloys and silicon carbide. It was found that appropriate additions of metallic silver and of barium fluoride/calcium fluoride eutectic to the baseline carbide composition significantly reduced friction coefficients while preserving, and in some cases, even enhancing wear resistance. The results of this study demonstrate that PS 200 is a promising coating composition to consider for high temperature aerospace and advanced heat engine applications. The excellent results in hydrogen make this coating of particular interest for use in the Stirling engine.

Sliney, Harold E.↗
NASA NTRS1986

Interfaces and failure mechanisms in Al-SiC composites

Aluminum alloys reinforced with silicon carbide whiskers exhibit significantly higher strength and modulus than the unreinforced alloys. However, the composites also exhibit low ductility and poor fracture toughness for reasons which are not well-understood. In this study, high resolution and conventional TEM techniques are used to analyze interface microstructure and failure mechanisms in P/M 2124 and 6061 aluminum alloys reinforced with silicon carbide whiskers. Interfacial oxides are typical of both composite materials, often distributed in clusters or in a discrete layer 2-5 nm thick along the whisker-matrix interface. Highly deformed regions beneath bulk tensile fracture surfaces reveal possible fracture nucleation centers as well as sites of stress concentration where intense plastic strain has occurred. Observations of such highly deformed regions include (1) void initiation at whisker ends, (2) interface decohesion involving the thin oxide layer, (3) transverse cracks in whiskers, and (4) cracks in large constituent particles. TEM results are presented and discussed in relation to mechanisms of composite failure.

Nutt, S. R.↗
NASA NTRS1987

Refractory semiconductors for high temperature thermoelectric energy conversion

Thermoelectric energy conversion utilizing nuclear heat sources has been employed for several decades to generate power for deep space probes. In the past, lead telluride and, more recently, silicon-germanium alloys have been the prime choices as thermoelectric materials for this application. Currently, a number of refractory semiconductors are under investigation at the Jet Propulsion Laboratory in order to produce power sources of higher conversion efficiency and, thus, lower mass per unit of power output. Included among these materials are improved Si-Ge alloys, rare earth compounds and boron-rich borides. The criteria used to select thermoelectric materials, in general, and the above materials, in particular, will be discussed. The current state of the art and the accomplishments to date in thermoelectric materials research will be reviewed.

Wood, Charles↗
NASA NTRS1987

Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

Vandersande, Jan W.↗
NASA NTRS1988

Diagnostics of silane and germane radio frequency plasmas by coherent anti-Stokes Raman spectroscopy

In situ plasma diagnostics using coherent anti-Stokes Raman spectroscopy have shown different dissociation characteristics for GeH4 and SiH4 in radio frequency (rf) plasma-enhanced chemical vapor deposition of amorphous silicon germanium alloy (a-SiGe:H) thin films. The GeH4 dissociation rate in rf plasmas is a factor of about 3 larger than that of SiH4. Plasma diagnostics have revealed that the hydrogen dilution of the SiH4 and GeH4 mixed plasma plays a critical role in suppressing the gas phase polymerization and enhancing the GeH4 dissociation.

Perry, Joseph W.↗
NASA NTRS1989

Accurate determination of specific heat at high temperatures using the flash diffusivity method

The flash diffusivity method of Parker et al. (1961) was used to measure accurately the specific heat of test samples simultaneously with thermal diffusivity, thus obtaining the thermal conductivity of these materials directly. The accuracy of data obtained on two types of materials (n-type silicon-germanium alloys and niobium), was + or - 3 percent. It is shown that the method is applicable up to at least 1300 K.

Vandersande, J. W.↗
NASA NTRS1990

High figure of merit thermoelectrics - Theoretical considerations

The thermoelectric figure of merit of a semiconductor, ZT, can be calculated from a small number of microscopic material parameters, the material composition, the doping level, and the temperature. The functional dependence of ZT on these parameters has been studied for a range of material parameters using a recently developed model which accurately and self-consistently describes the thermoelectric properties of n-type silicon-germanium alloys. ZT values several times larger than current state-of-the-art values of ZT of about 1 are shown to be entirely consistent with existing theory, even using material parameters already observed. A search for materials with much higher figure of merit values therefore remains of interest, in spite of several decades of relatively slow progress in this area.

Vining, Cronin B.↗