Search NASA⌕ Search

SEARCH · Search NASA

Results for “SILICON COMPOUNDS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Etching Silicon Films With Xenon Difluoride

Microscopic circuit structures prepared for probing. Xenon difluoride removes relatively large amounts of silicon from integratedcircuit or solar-cell structures while leaving SiO2, Si3N4, Al2O3, and other compounds intact. In Etching Apparatus, solid XeF2 sublimated in vacuum, then allowed to flow over sample at controlled rate and pressure. Wafer etched from back to expose SiO2 and Al layers for spectroscopic analysis of SiO2/Al interface. Using XeF2 technique, silicon wafer with oxide layer reduced in thickness from standard 300 micrometer to as little as 10 nanometer without adversely affecting oxide.

Hecht, M. H.↗
NASA NTRS1974

Study of air pollutant detectors

The application of field ionization mass spectrometry (FIMS) to the detection of air pollutants was investigated. Current methods are reviewed for measuring contaminants of fixed gases, sulfur compounds, nitrogen oxides, hydrocarbons, and particulates. Two enriching devices: the dimethyl silicone rubber membrane separator, and the selective adsorber of polyethylene foam were studied along with FIMS. It is concluded that the membrane enricher system is not a suitable method for removing air pollutants. However, the FIMS shows promise as a useable system for air pollution detection.

Gutshall, P. L.↗
NASA NTRS2008

Adhesion of Silicone Elastomer Seals for NASA's Crew Exploration Vehicle

Silicone rubber seals are being considered for a number of interfaces on NASA's Crew Exploration Vehicle (CEV). Some of these joints include the docking system, hatches, and heat shield-to-back shell interface. A large diameter molded silicone seal is being developed for the Low Impact Docking System (LIDS) that forms an effective seal between the CEV and International Space Station (ISS) and other future Constellation Program spacecraft. Seals between the heat shield and back shell prevent high temperature reentry gases from leaking into the interface. Silicone rubber seals being considered for these locations have inherent adhesive tendencies that would result in excessive forces required to separate the joints if left unchecked. This paper summarizes adhesion assessments for both as-received and adhesion-mitigated seals for the docking system and the heat shield interface location. Three silicone elastomers were examined: Parker Hannifin S0899-50 and S0383-70 compounds, and Esterline ELA-SA-401 compound. For the docking system application various levels of exposure to atomic oxygen (AO) were evaluated. Moderate AO treatments did not lower the adhesive properties of S0899-50 sufficiently. However, AO pretreatments of approximately 10(exp 20) atoms/sq cm did lower the adhesion of S0383-70 and ELA-SA-401 to acceptable levels. For the heat shield-to-back shell interface application, a fabric covering was also considered. Molding Nomex fabric into the heat shield pressure seal appreciably reduced seal adhesion for the heat shield-to-back shell interface application.

deGroh, Henry C., III↗
NASA NTRSDate not supplied

Gaseous By-Product of Thermal Vacuum Processing of Lunar Highland Simulant

Scientists at Kennedy Space Center are advancing technologies to achieve oxygen extraction on the Lunar surface. One such technology is Molten Regolith Electrolysis (MRE) in which regolith simulant is melted under high temperatures to perform oxygen extraction through electrolysis of the melt pool. A study was conducted to understand the molten formation and proper-ties of Lunar Highlands Simulants (LHS-1) under high vacuum environments ranging between 10-6 Torr. These studies include investigating the regolith melt behavior and by-product gas analysis systems to prepare for pilot plant development and operations. The off-gassing rates and pressure build-up, gaseous compounds, and material compatibility may be a risk to MRE systems. The KSC findings are reported here for inclusion into future mis-sion architecture and operational planning. The four stages of the experiment were vacuum, resistive heating, regolith melt and gas detection. The regolith mass of 70 g was melted in a 40 cm tall x 50 cm diameter vacuum chamber at temperature increase rate 47 ℃ /min and ramp rate of 1 ampere/3 min up to an 18-amp maximum. The test is conducted for about 60 minutes and the constituent gases produced during heating of regolith is monitored with a re-sidual gas analyzer. During the molten formation, primary off-gassing volatiles included water vapor (18 amu), a peak at 44 amu (FeO2 – expected), and atomic oxygen (16 amu), among a series of other compounds that could create compatibility issues such as magnesium, chlorine, and silicon oxide. These results add to the knowledge required for successful oxygen extraction on the moon.

Molten Regolith Electrolysis↗
NASA NTRS1982

Fabrication of sinterable silicon nitride by injection molding

Transformation of structural ceramics from the laboratory to production requires development of near net shape fabrication techniques which minimize finish grinding. One potential technique for producing large quantities of complex-shaped parts at a low cost, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material. Binder selection methodology, compounding of ceramic and binder components, injection molding techniques, and problems in binder removal are discussed. Strength, oxidation resistance, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material.

Quackenbush, C. L.↗
NASA NTRS1998

Temperature Dependence of Diffusion and Reaction at a Pd/SiC Contact

Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, emphasis has been put on the understanding of changes of physical and chemical properties of the Schottky diodes with variation of temperature. Schottky diodes were made by depositing ultra-thin palladium films onto silicon carbide substrates. The electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of RT-400 C. However, both palladium diffused into SiC and silicon migrated into palladium thin film as well as onto surface were observed at room temperature. The formation of palladium compounds at the Pd/SiC interface was also observed. Both diffusion and reaction at the Pd/SiC interface became significant at 300 C and higher temperature. In addition, silicon oxide was found also at the interface of the Pd/SiC contact at high temperature. In this report, the mechanism of diffusion and reaction at the Pd/SiC interface will be discussed along with experimental approaches.

Shi, D.T.↗
NASA NTRS1994

Characterization of silicon-carbon clusters by infrared laser spectroscopy: the nu 3(sigma u) band of linear Si2C3

The nu 3(sigma u) fundamental vibration of 1 sigma g+ Si2C3 has been observed using a laser vaporization-supersonic cluster beam-diode laser spectrometer. Forty rovibrational transitions were measured in the range of 1965.8 to 1970.9 cm-1 with a rotational temperature of 10-15 K. A least-squares fit of these transitions yielded the following molecular constants: nu 3(sigma u)=1968.188 31(18) cm-1, B"=0.031 575 1(60) cm-1, and B'=0.031 437 4(57) cm-1. These results are in excellent agreement with recent Fourier transform infrared (FTIR) measurements of Si2C3 trapped in a solid Ar matrix [J. Chem. Phys. 100, 181(1994)] and with ab initio calculations [J. Chem. Phys. 100, 175 (1994)] which suggest cumulenic-like bonding for Si2C3, analogous to the isovalent C5 carbon cluster.

Non-NASA Center↗
NASA NTRS1969

The Quantasyn, an improved quantum detector

Quantasyn provides absolute measurement of radiation flux in the range 1000 A to 4500 A and into the vacuum ultraviolet. This radiation detector cimbines the high quantum efficiency and inherent linearity of the silicon solar cell with the constant quantum response of the fluorescent organic compound liumogen.

Gorstein, M.↗
NASA NTRS1971

Materials investigation and tests for the development of space compatible electrical connectors

A molding study of compounds based on copolymers of highly fluorinated olefins and of flame retardant silicone is reported. Both single cavity and four cavity molds having size 22 and 24 holes with three webs in each hole were used. Also covered are dielectric strength, arc resistance, Bashore rebound, and maintenance aging tests on the various materials that have been successfully molded.

Pomeroy, C.↗
NASA NTRS1988

Feasibility studies of the growth of 3-5 compounds of boron by MOCVD

Boron-arsenic and boron-phosphorus films have been grown on Si sapphire and silicon-on-sapphire (SOS) by pyrolyzing Group 3 alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB), in the presence of AsH3 and PH3, respectively, in an H2 atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. However, the films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH3 were pyrolyzed over the temperature range 550 C to 900 C. The films were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 micron) B-P and thick (5 micron) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH3 and TMB showed a higher carbon content than those grown from AsH3 and TMB. Based on their B/As and B/P ratios, films with nominal compositions B sub12-16 As2 and B sub1.1-1.3 P were grown using TMB as the boron source.

Manasevit, H. M.↗
NASA NTRS1984

Method of forming a relatively stable slip of silicon metal particles and yttrium containing particles

The method concerns forming a relatively stable slip of silicon metal particles and yttrium containing particles. In one embodiment, a casting slip of silicon metal particles is formed in water. Particles of a yttrium containing sintering aid are added to the casting slip. The yttrium containing sintering aid is a compound which has at least some solubility in water to form Y.sup.+3 ions which have a high potential for totally flocculating the silicon metal particles into a semiporous solid. A small amount of a fluoride salt is added to the casting slip which contains the yttrium containing sintering aid. The fluoride salt is one which will produce fluoride anions when dissolved in water. The small amount of the fluoride anions produced are effective to suppress the flocculation of the silicon metal particles by the Y.sup.+3 ions so that all particles remain in suspension in the casting slip and the casting slip has both an increased shelf life and can be used to cast articles having a relatively thick cross-section. The pH of the casting slip is maintained in a range from 7.5 to 9. Preferably, the fluoride salt used is one which is based on a monovalent cation such as sodium or ammonia. The steps of adding the yttrium containing sintering aid and the fluoride salt may be interchanged if desired, and the salt may be added to a solution containing the sintering aid prior to addition of the silicon metal particles.

Dickie, Ray A.↗
NASA NTRS1974

Improved toughness of refractory compounds

The concept of grain-boundary-engineering through elimination of the grain-boundary silicate phase in silicon nitride was developed. The process involved removal of the silica from the nitride powder via a thermal treatment coupled with the use of nitride additives to compensate the remaining oxygen. Magnesium and aluminum nitrides are found to be the most effective additive for use as oxygen compensators. Strength decreases at elevated temperatures are not observed in the alumina containing material. The creep rate of a dual additive sialon composition was two orders of magnitude lower at 1400 C than commercial silicon nitride. A cursory analysis of the creep mechanism indicate that grain-boundary sliding is avoided through elimination of the grain-boundary silicate phase.

Wright, T. R.↗
NASA NTRS1987

Rapid thermal annealing of indium phosphide compound semiconductors

The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.

Biedenbender, Michael D.↗
NASA NTRS1977

Baseline tests of the AM General DJ-5E electruck electric delivery van

An electric quarter ton truck designed for use as a postal delivery vehicle was tested to characterize the state of the art of electric vehicles. Vehicle performance test results are presented. It is powered by a single-module, 54 volt industrial battery through a silicon controlled rectifier continuously adjustable controller with regenerative braking applied to a direct current compound wound motor.

Dustin, M. O.↗
NASA NTRS1986

Oscillations of a viscous compound drop

The effect of viscosity on normal mode oscillations of a compound drop is determined for a range of values of the viscosity, and the effect of a host medium is considered. The general form of the dispersion relation is derived, and numerical values are obtained for the case of an annular liquid region composed of silicon oil and with the core and host regions taken to be air. Results indicate that the sloshing mode of the compound drop is more damped than the bubble mode.

Lyell, M. J.↗
NASA NTRS1975

Photovoltaic applications of Compound Parabolic Concentrator (CPC)

The use of a compound parabolic concentrator as field collector, in conjunction with a primary focusing concentrator for photovoltaic applications is studied. The primary focusing concentrator can be a parabolic reflector, an array of Fresnel mirrors, a Fresnel lens or some other lens. Silicon solar cell grid structures are proposed that increase efficiency with concentration up to 10 suns. A ray tracing program has been developed to determine energy distribution at the exit of a compound parabolic concentrator. Projected total cost of a CPC/solar cell system will be between 4 and 5 times lower than for flat plate silicon cell arrays.

Winston, R.↗
NASA NTRS1977

Investigation of the composition of the Luna 16 lunar sample

The concentrations of aluminum, manganese, sodium, chromium, iron, cobalt, and 12 rare earth elements were determined by neutron activation analysis using slow neutrons. Oxygen and silicon were determined using a fast neutron generator. Mossbauer spectroscopy was used to investigate iron compounds in Luna 16 regolith samples from the upper part of the core.

Bakos, L.↗