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At least 163 records · Page 9

Development and simulation study of a new inverse-pinch high Coulomb transfer switch

The inverse-pinch plasma switch was studied using a computer simulation code. The code was based on a 2-D, 2-temperature magnetohydrodynamic (MHD) model. The application of this code was limited to the disk-type inverse-pinch plasma switch. The results of the computer analysis appear to be in agreement with the experimental results when the same parameters are used. An inverse-pinch plasma switch for closing has been designed and tested for high-power switching requirements. An azimuthally uniform initiation of breakdown is a key factor in achieving an inverse-pinch current path in the switch. Thus, various types of triggers, such as trigger pins, wire-brush, ring trigger, and hypocycloidal-pinch (HCP) devices have been tested for uniform breakdown. Recently, triggering was achieved by injection of a plasma-ring (plasma puff) that is produced separately with hypocycloidal-pinch electrodes placed under the cathode of the main gap. The current paths at switch closing, initiated by the injection of a plasma-ring from the HCP trigger are azimuthally uniform, and the local current density is significantly reduced, so that damage to the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes is four orders of magnitude less than that of a spark-gap switch for the same switching power. Indeed, a few thousand shots with peak current exceeding a mega-ampere and with hold-off voltage up to 20 kV have been conducted without showing measurable damage to the electrodes and insulators.

Choi, Sang H.↗

Design for megavolt inverse-pinch plasma switch

To meet the requirements for the output switch of an ultra-high-power (greater than 30 GW) pulser, an upgrading design for an inverse-pinch plasma switch (INPIS) is considered. The hold-off voltage of 1 MV is met by adopting multistage rim-fire electrodes and using SF6 as the dielectric gas of the switch. The inductance and capacitance of the switch, which are restricted by the short rise-time (less than 0.1 microsec) requirement, were met by adjusting the dimensions of the coaxial electrodes of the switch. The input/output transmission lines attached to the switch will be immersed in oil to meet the high voltage insulation and impedance-matching requirements. Since the forwarding current is relatively low with respect to the switch capability, the lifetime of the switch is expected to exceed the requirement of 10,000 shots.

Lee, Ja H.↗

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Jah, Muzar↗

The Morrison Bearingless Switched Reluctance Motor

Switched reluctance motors typically consist of pairs of poles protruding outward from a central rotor, surrounded by pairs of coils protruding inward from a stator. The pairs of coils, positioned a short distance from opposing sides of the rotor, are connected in series. A current runs through the coils, generating a magnetic flux between the coils. This attracts the protruding poles on the rotor, and just as the poles on the rotor approach the coils, the current to the coils is inverted, repelling the rotor s poles as they pass the coils. This current switching, back and forth, provides a continuous rotational torque to the rotor. reliability, durability, low cost, and operation in adverse environments such as high temperatures, extreme temperature variations, and high rotational speeds. However, because rotors are often manufactured with minute flaws due to imperfections in the machining process, traditional switched reluctance motors often suffer from substantial amounts of vibration. In addition, the current in the coils imparts a strong radial magnetic force on the rotor; the continuous alternating of the direction of this force also causes vibration. As a result, switched reluctance motors require bearings that, run at high speeds, can require lubrication apparatus and are subject to problems with heat and wear. My mentor s recent invention, the "Bearingless" Switched Reluctance Motor, actually uses magnetic bearings instead of traditional physical bearings. Sensors are used to continuously determine the position of the rotor. A computer reads the position sensor input, performs calculations, and outputs a current to a set of extra coils (in addition to the coils rotating the rotor). This current provides a magnetic force that counters and damps the vibration. The sense-calculate-update loop iterates more than thirty thousand times per second. For now, our goal is to have the rotor rotate at about 6000 rprn, and at that speed, the magnetic bearing is adjusting the rotor s position more than 300 times per rotation. and vibration-suppression capacity for the switched reluctance motor. Traditional switched reluctance motors possess many positive traits, including It is hoped that this new invention will increase load-carrying capacity, stiffness, and vibration-suppression capacity for the switched reluctance motor.

Wong, David S.↗

Radio Frequency (RF) Micro-Electromechanical Systems (MEMS) Switches for Space Communications

Micro-electromechanical systems (MEMS) is an emerging technology for radio frequency (RF) systems because it has the potential to dramatically decrease loss and improve efficiency. In this paper, we address the design and fabrication of novel MEMS switches being developed at NASA Glenn Research Center. Two types of switches are being developed: a microstrip series single pole single throw (SPST) switch and a coplanar waveguide (CPW) series SPST and single pole double throw (SPDT) switches. These are being fabricated as an integral part of 50 Ohm microstrip and CPW RF integrated circuits using microfabrication techniques. The construction of the switch relies on a cantilever beam that is partially supported by a dielectric post. The cantilever beam is electro-magnetically actuated. To decrease stiction, a Si3N4 thin film is deposited over the contact area. Thus, when the switch is closed, the ON-state insertion loss is governed by the parallel plate capacitance formed by the two contacts. The isolation in the OFF-state is governed by the parasitic capacitance when the cantilever is in the up position. RF MEMS switches have been demonstrated with 80% lower insertion loss than conventional solid state devices (GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and Silicon PIN diodes) based switches. For example, a conventional GaAs five-bit phase shifter which is required for beam steering in a phased array antenna has approximately 7 dB of insertion loss at 26.5 GHz where as a comparable MEMS based phase shifter is expected to have only 2 dB of insertion loss. This translates into 56% lower power dissipation and therefore decreases the thermal load on the spacecraft and also reduces the power amplifier requirements. These benefits will enable NASA to build the next generation of deep space science crafts and micro/nano satellites.

Simons, Rainee N.↗

Power Actuation and Switching Module Test Results

The X2000 Power System Electronics (PSE) is a Jet Propulsion Laboratory (JPL) task to develop a new generation of power system building blocks for use on future deep-space missions. The effort includes the development of electronic components and modules that can be used as building blocks in the design of generic spacecraft power systems. All X2000 avionics components and modules are designed for use in centralized or distributed spacecraft architectures. The Power Actuation and Switching Module (PASM) has been developed under the X2000 program. This component enables a modular and scalable design approach for power switching applications, which can result in a wide variety of power switching architectures using this simple building block. The PASM is designed to provide most of the necessary power switching functions of spacecraft for various Deep Space missions including future missions to Mars, comets, Jupiter and its moons. It is fabricated using an ASIC process that is tolerant of high radiation. The development included two application specific integrated circuits (ASICs) and support circuitry all packaged using High Density Interconnect (HDI) technology. It can be operated in series or parallel with other PASMs. It can be used as a high-side or low-side switch and it can drive thruster valves, pyrotechnic devices such as NASA standard initiators, bus shunt resistors, and regular spacecraft component loads. Each PASM contains two independent switches with internal current limiting and over-current trip-off functions to protect the power subsystem from load faults. During turnon and turnoff each switch can limit the rate of current change (di/dt) to a value determined by the user. Three-way majority-voted On/Off commandability and full switch status telemetry (both analog and digital) are built into the module. This paper is a follow up to the one presented at he IECEC 2004 conference that will include the lessons learned and test results from the development.

X2000↗

Passive gas-gap heat switch for adiabatic demagnetization refrigerator

A passive gas-gap heat switch for use with a multi-stage continuous adiabatic demagnetization refrigerator (ADR). The passive gas-gap heat switch turns on automatically when the temperature of either side of the switch rises above a threshold value and turns off when the temperature on either side of the switch falls below this threshold value. One of the heat switches in this multistage process must be conductive in the 0.25? K to 0.3? K range. All of the heat switches must be capable of switching off in a short period of time (1-2 minutes), and when off to have a very low thermal conductance. This arrangement allows cyclic cooling cycles to be used without the need for separate heat switch controls.

Shirron, Peter J.↗

Switch-connected HyperX network

A network system includes a plurality of sub-network planes and global switches. The sub-network planes have a same network topology as each other. Each of the sub-network planes includes edge switches. Each of the edge switches has N ports. Each of the global switches is configured to connect a group of edge switches at a same location in the sub-network planes. In each of the sub-network planes, some of the N ports of each of the edge switches are connected to end nodes, and others of the N ports are connected to other edge switches in the same sub-network plane, other of the N ports are connected to at least one of the global switches.

42 ENGINEERING↗

SLAC LINAC Sub-booster Modulator Upgrading with Solid State Switch

The LINAC sub-booster modulator was designed in last 60s decade and has serviced SLAC LINAC about 60 years without primary switching upgrade. The primary switch for high power pulse is vacuum tetrode switch. Recently the vacuum switch price has surged, probably because more and more customers have shifted to the solid-state switch from the vacuum switch. With the foresight of the vacuum switch will finally become obsolete in market, the solid-state switch has been tested in SLAC LINAC sub-booster modulator and the performance is evaluated. In this paper, the design and performance will be reported.

Chen, Xupeng↗

Scalable Al 2 O 3 –TiO 2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Abstract Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here, a simple and scalable material system of conductive oxide interfaces is employed, and their unique properties are leveraged for a new type of resistive switching device. An Al 2 O 3 –TiO 2 ‐based valence‐change resistive switching device, where the conductive oxide interface serves both as the bottom electrode and as a reservoir of defects for switching, is demonstrated. The amorphous–polycrystalline Al 2 O 3 –TiO 2 conductive interface is obtained following the technological path of simplifying the fabrication of the 2D electron gases (2DEGs), making them scalable for practical mass integration. Physical analysis of the device chemistry and microstructure with comprehensive electrical analysis of its switching behavior and performance is combined. The origin of the resistive switching is pinpointed to the conductive oxide interface, which serves both as the bottom electrode and as a reservoir of oxygen vacancies. The latter plays a key role in valence‐change resistive switching devices. The new device, based on scalable and complementary metal–oxide–semiconductor (CMOS)‐technology‐compatible fabrication processes, opens new design spaces toward increased tunability and simplification of the device selection challenge.

36 MATERIALS SCIENCE↗

Optimal Variable Switching Frequency Scheme to Reduce Loss of Single-Phase Grid-Connected Inverter With Unipolar and Bipolar PWM

Reducing the power loss of a converter without increasing its volume or cost in hardware has always been a much sought-after but challenging goal. This article proposes a comprehensive variable switching frequency (VSF) scheme to improve the overall system efficiency while still meeting a given total harmonic distortion (THD) requirement without any hardware changes, achieved only by changes to the controller. In this article, it is analyzed that for the H-bridge inverter, the inductor copper loss and the switch conduction loss are independent of the switching frequency (SF), while the device switching loss and the inductor core loss are functions of the SF. This article aims at weighting the combined switching loss and inductor core loss for both the unipolar and bipolar modulation techniques, with the constraint on the output THD, which, for fixed passive components, is a function of inductor ripple current that in turn depends on the SF. An optimal VSF scheme is devised through rigorous mathematical analysis of the output ripple component and the SF-dependent losses. In each switching cycle, the inductor ripple current is predicted with the circuit parameters, such as duty cycle, switching period, inductance, and dc voltage, and by implementing the VSF scheme, the current ripple is optimally varied such as to satisfy the THD requirement while reducing the SF-dependent losses. A generalized method to design VSF schemes for any topology and specifications is also presented, which would help future users in designing the VSF controller. A 1-kW H-bridge inverter using SiC MOSFETs and powdered iron/ferrite core has been built to validate the theoretical analysis. Both constant SF (CSF) scheme (200 kHz) and optimal VSF scheme with simple controller modification have been implemented in the experimental prototype using DSP TMS320f28335. Compared with the CSF scheme, the optimal VSF scheme shows a significant improvement in the system efficiency at rated power from 94.7%...

conduction loss↗

Toward higher-radix switches with co-packaged optics for improved network locality in data center and HPC networks [Invited]

In this work, we study the network locality improvements that can be achieved by using co-packaged optics in data center and high-performance computing (HPC) networks. The increased escape bandwidth offered by co-packaged optics can enable switches with speeds of 51.2 Tb/s and beyond. From a network architecture perspective, the key advantages of introducing co-packaged optics at the switch points include the implementation of large-scale topologies of >12,000 end points with 4× higher bisection bandwidth and the reduction of the required number of switches by >40% compared with state-of-the-art approaches. From a network operation perspective, improved network locality and faster operation can be achieved since the higher-radix switches can mitigate the impact of network contention. Placing applications under fewer leaf switches reduces the number of packets that cross the spine switches in a leaf-spine topology. The proposed scheme is evaluated via discrete-event simulations: we initially evaluate the network locality properties of the system by using virtual-machine traces from a production data center, and we subsequently quantify the performance improvements by simulating an all-to-all pattern for a variety of message sizes over a number of nodes. The results suggest that co-packaged optics form a promising solution for keeping up with bandwidth scaling in future networks. The virtual-machine analysis shows that large-scale applications can be placed under up to 50% fewer first-level switches, while the network analysis shows speedups of up to 7.1, which translates to execution time reductions of up to 26% and 42.7% for applications with communication ratios of 0.3 and 0.5, respectively.

99 GENERAL AND MISCELLANEOUS↗

High Velocity, Low‐Voltage Collective In‐Plane Switching in (100) BaTiO 3 Thin Films

Abstract Ferroelectrics are being increasingly called upon for electronic devices in extreme environments. Device performance and energy efficiency is highly correlated to clock frequency, operational voltage, and resistive loss. To increase performance it is common to engineer ferroelectric domain structure with highly‐correlated electrical and elastic coupling that elicit fast and efficient collective switching. Designing domain structures with advantageous properties is difficult because the mechanisms involved in collective switching are poorly understood and difficult to investigate. Collective switching is a hierarchical process where the nano‐ and mesoscale responses control the macroscopic properties. Using chemical solution synthesis, epitaxially nearly‐relaxed (100) BaTiO 3 films are synthesized. Thermal strain induces a strongly‐correlated domain structure with alternating domains of polarization along the [010] and [001] in‐plane axes and 90° domain walls along the [011] or [01] directions. Simultaneous capacitance–voltage measurements and band‐excitation piezoresponse force microscopy revealed strong collective switching behavior. Using a deep convolutional autoencoder, hierarchical switching is automatically tracked and the switching pathway is identified. The collective switching velocities are calculated to be ≈500 cm s −1 at 5 V (7 kV cm −1 ), orders‐of‐magnitude faster than expected. These combinations of properties are promising for high‐speed tunable dielectrics and low‐voltage ferroelectric memories and logic.

36 MATERIALS SCIENCE↗

Reduced Stochastic Resistive Switching in Organic-Inorganic Hybrid Memristors by Vapor-Phase Infiltration

We report resistive random-access memory (RRAM) is promising for next-generation data storage and non-von Neumann computing hardware. However, tuning device switching characteristics and particularly, controlling their stochastic variation remain as critical challenges. Here, new organic-inorganic hybrid RRAM media are reported whose bipolar switching characteristics and stochasticity can be controlled by vapor-phase infiltration (VPI), an ex situ hybridization technique derived from atomic layer deposition. Hybrid RRAMs based on AlO x -infiltrated SU-8 feature facile tunability of device switching voltages, off-state current, and on-off ratio by adjusting the amount of infiltrated AlO x in the hybrid. Furthermore, a significant reduction in the stochastic, cycle-to-cycle variations of switching parameters is enabled by AlO x infiltration, driven by the infiltration-induced changes in mechanical, dielectric, and chemical properties of organic medium and their influence on the dimension and formation characteristics of conductive filaments. Finally, multi-level analog switching potentially useful for neuromorphic applications are demonstrated, along with direct, one-step device patterning exploiting the negative-tone resist feature of SU-8. With the demonstrated control over switching characteristics and stochastic variation, combined with analog switching and one-step patterning capabilities, the results not only present a novel hybrid medium for RRAM applications but also showcase the utility of VPI for developing new, high-performance hybrid RRAM devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Magnetic switching in granular FePt layers promoted by near-field laser enhancement

Light-matter interaction at the nanoscale in magnetic materials is a topic of intense research in view of potential applications in next-generation high-density magnetic recording. Laser-assisted switching provides a pathway for overcoming the material constraints of high-anisotropy and high-packing density media, though much about the dynamics of the switching process remains unexplored. We use ultrafast small-angle X-ray scattering at an X-ray free-electron laser to probe the magnetic switching dynamics of FePt nanoparticles embedded in a carbon matrix following excitation by an optical femtosecond laser pulse. We observe that the combination of laser excitation and applied static magnetic field, 1 order of magnitude smaller than the coercive field, can overcome the magnetic anisotropy barrier between “up” and “down” magnetization, enabling magnetization switching. This magnetic switching is found to be inhomogeneous throughout the material with some individual FePt nanoparticles neither switching nor demagnetizing. The origin of this behavior is identified as the near-field modification of the incident laser radiation around FePt nanoparticles. Furthermore, the fraction of not-switching nanoparticles is influenced by the heat flow between FePt and a heat-sink layer.

36 MATERIALS SCIENCE↗

Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa 2 Cu 3 O x with Excess Cu Addition

Resistive switching technologies have the potential not only to create large efficiency gains in computer memory but also to revolutionize emerging fields such as neuromorphic computing. In this paper, we report on novel resistive switching behavior in devices made from room-temperature-grown Cu-rich amorphous YBa 2 Cu 3 O x (YBCO) films, a material otherwise well-known as a high-temperature superconductor. In Nb:STO substrate/amorphous YBCO film (≈200 nm)/metallic Cu (15 nm)/metallic Pt (15 nm) devices, we demonstrate that the resistive switching can be tuned between mechanisms involving extended areas of the YBCO/electrode interface and a single-point filamentary mechanism simply by changing the Cu content of the deposition target and hence in the films. Changing the Cu content can also be used to optimize the properties of the devices further, with devices with an added 15 mol % of Cu in YBCO initially providing an on/off ratio >100, switching endurance potential >6500 cycles, and state retention >2 × 10 4 s, all at low switching fields of 0.3 MV/cm. The amalgam of promising resistive switching properties, fast growth (150 nm/min) at room temperature, and tuneability of the switching mechanism indicates the strong potential of this proof-of-concept amorphous system for future memory applications.

Cu↗

Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Space-time evolution of ejected plasma for the triggering of gas switch

Ejected plasma has been widely applied to the discharge process of gas spark switches as a trigger technology, and the development process of ejected plasma has a direct and important effect on the discharge characteristics of gas switches. In this paper, both the injection characteristics and space-time evolution of ejected plasma for the triggering of gas spark switch with different stored energies, pulse polarities, and pressures are studied. The discharge characteristics and breakdown process of a gas switch ignited by ejected plasma under different working coefficients are also discussed briefly. The results show that stored energy has significant influence on the characteristics of ejected plasma. With the increase of stored energy, the propulsion mode of ejected plasma in the axial direction transforms from “plasmoid” to “plasma flow,” and the distribution of the ejected plasma goes through “cloud,” “core-cloud,” and “branch” in sequence. The velocity of ejected plasma under negative pulse polarity is obviously higher than that under positive pulse polarity, especially at the very beginning time. The radial dimensions of ejected plasma under two kinds of pulse polarities follow the similar varying pattern over time, which increase first and then decrease, assuming an inverted “U”-shaped curve. With the increase of pressure, the velocity of ejected plasma significantly decreases and the “branch” channels droop earlier. Applying the ejected plasma to the triggering of a gas switch, the switch can be triggered reliably in a much wide working coefficient range of 10%–90%. With the increase of working coefficient, the breakdown process of the switch translates from slow working mode to fast working mode, and the delay time reduces from tens of μs to hundreds of ns.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗