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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Octahedral to tetrahedral bonding transitions in the local structure of phase change optical media Ge 2 Sb 2 Se 5 x Te 5-5 x with Se doping

Random access memories utilize fast, reversible switching between ordered and disordered states of matter in phase change materials (PCMs) such as Ge2Sb2Te5-5x. The short-range structure in the disordered phase has been described either as (i) a network of Ge tetrahedra or (ii) Peierls distorted Ge/Sb octahedra. The PCM transition was investigated in bulk Ge2Sb2Se5xTe5-5x (GSST), in which amorphization sets in with Se doping (x ≈ 0.85) upon quenching. GSST has a hexagonal crystalline ground state with Ge/Sb octahedral coordination, but the phase change transition to the amorphous state that is only observed when the system is quenched brings a short-range structure with sharp, tetrahedrally coordinated Ge/Sb correlations and shortened bonds that are distinctly different from the expected octahedral pairing.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Layer and material-type dependent photoresponse in Se 2 /WS 2 vertical heterostructures

Transition metal dichalcogenide (TMD) heterostructures are promising for a variety of applications in photovoltaics and photosensing. Successfully exploiting these heterostructures will require an understanding of their layer-dependent electronic structures. However, there is no experimental data demonstrating the layer-number dependence of photovoltaic effects (PVEs) in vertical TMD heterojunctions. Here, by combining scanning electrochemical cell microscopy (SECCM) with optical probes, we report the first layer-dependence of photocurrents in WSe 2 /WS 2 vertical heterostructures as well as in pristine WS 2 and WSe 2 layers. For WS 2 , we find that photocurrents increase with increasing layer thickness, whereas for WSe 2 the layer dependence is more complex and depends on both the layer number and applied bias (V b ). Further, we find that photocurrents in the WSe 2 /WS 2 heterostructures exhibit anomalous layer and material-type dependent behaviors. Our results advance the understanding of photoresponse in atomically thin WSe 2 /WS 2 heterostructures and pave the way to novel nanoelectronic and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Preferential hole defect formation in monolayer W Se 2 by electron-beam irradiation

Monolayer transition-metal dichalcogenides (TMDCs) have been extensively studied due to their wide range of physical properties and applications. It has been demonstrated that the electron beam in a transmission electron microscope (TEM) or scanning TEM (STEM) generates chalcogen vacancies that agglomerate into dispersed linelike or holelike defects. Here we employ a STEM electron beam and demonstrate that, in WSe 2 , beam-induced chalcogen vacancies initially form certain dispersed multivacancy structures, as seen in TMDCs in prior work. However, with suitable control of the STEM focused electron beam, these multivacancies gradually evolve into a dense network of ten-, 12-, 14-, and 16-member ring round holes, whereas the same process leads predominantly to chalcogen-vacancy line defects in other trigonal-prismatic TMDCs. Density functional theory calculations find that the underlying atomic-scale processes lead preferentially to defect structures that lower the total energy so that we are able to track the formation of the observed multivacancy complexes, which then lead to the formation of dense large round holes in WSe 2 . The same processes in WS 2 , however, are energetically unfavorable, while linear multivacancy defects are preferred, as observed. The demonstrated control of the formation of unique high-density round holes in WSe 2 has potential for applications such as atomic and molecular sieving.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Tuning the charge density wave quantum critical point and the appearance of superconductivity in Ti Se 2

The transition metal dichalcogenide TiSe 2 is an ideal correlated system for studying the interplay between superconductivity (SC) and a charge density wave (CDW) because both symmetry-breaking phases can be easily controlled by either Cu intercalation or physical pressure. SC appears in proximity to a CDW quantum critical point (QCP) induced by both Cu intercalation and applied pressure, raising the possibility of CDW-driven SC. Here, we report tuning the CDW QCP by simultaneously controlling Cu intercalation and external pressure and the appearance of a SC dome centered on the tunable QCP. When subjected to pressure, CDW ordering of Cu-intercalated Cu 0.025 TiSe 2 is completely suppressed at 2.3 GPa, where the residual resistivity and the resistivity-temperature exponent decrease sharply, indicating the presence of the CDW QCP. The upper critical field of Cu 0.025 TiSe 2 is 3.51 kOe, 16 times larger than that of pristine TiSe 2 , and its temperature dependence is linear, indicating that SC of TiSe 2 is switched from the two-dimensional- to anisotropic three-dimensional-like by Cu intercalation. These discoveries show that the simultaneous application of Cu intercalation and pressure move the CDW QCP and that the highest SC transition temperature is pinned to the QCP, suggesting that the SC in TiSe 2 is strongly correlated with CDW quantum criticality.

2-dimensional systems↗
DOE OSTI2021

Vapor Treatment and In-situ Recrystallization by Copper Chloride on Cu(In,Ga)Se 2 Thin Film

Deposition of CIGS semiconductor thin films was performed at low temperature and high rate by three-stage coevaporation process on molybdenum coated glass substrate. Here, a vapor treatment was done in between the second and third stage by flashing CuCl 2 for 5 mins at 400 °C. A large change in morphology and crystal structure was observed after the treatment. XRD and SEM showed that small grains transformed into large grains. A smoother Ga profile was observed by SIMS measurements for the treated films as compared to as-deposited films. Furthermore, the Na profile was also modified in the recrystallized samples, with a lower content after recrystallization.

14 SOLAR ENERGY↗
DOE OSTI2021

Growth of topological insulator Bi 2 Se 3 particles on GaAs via droplet epitaxy

The discovery of topological insulators (TIs) and their unique electronic properties has motivated research into a variety of applications, including quantum computing. It has been proposed that TI surface states will be energetically discretized in a quantum dot nanoparticle. These discretized states could then be used as basis states for a qubit that is more resistant to decoherence. In this work, prototypical TI Bi2Se3 nanoparticles are grown on GaAs (001) using the droplet epitaxy technique, and we demonstrate the control of nanoparticle height, area, and density by changing the duration of bismuth deposition and substrate temperature. Within the growth window studied, nanoparticles ranged from 5 to 15 nm in height with an 8–18 nm equivalent circular radius, and the density could be relatively well controlled by changing the substrate temperature and bismuth deposition time.

Materials Science↗
DOE OSTI2020

Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se 2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence

Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn 1-x GaxSe 2 (CIGSe) solar cells. A range of compositions are investigated, including constant x=0.35 and x=0.55 as well as a graded composition profile having a minimum of x=0.25. Both the open circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. Finally, to quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.

14 SOLAR ENERGY↗
DOE OSTI2021

Self-regulated growth of candidate topological superconducting parkerite by molecular beam epitaxy

Ternary chalcogenides, such as parkerites and shandites, are a broad class of materials exhibiting a rich diversity of transport and magnetic behavior and an array of topological phases, including Weyl and Dirac nodes. However, they remain largely unexplored as high-quality epitaxial thin films. Here, we report the self-regulated growth of thin films of the strong spin–orbit coupled superconductor Pd 3 Bi 2 Se 2 on SrTiO 3 by molecular beam epitaxy. Films are found to grow in a self-regulated fashion, where, in excess Se, the temperature and relative flux ratio of Pd to Bi control the formation of Pd 3 Bi 2 Se 2 due to the combined volatility of Bi, Se, and Bi–Se bonded phases. The resulting films are shown to be of high structural quality, and the stoichiometry is independent of the Pd:Bi and Se flux ratio and exhibits a superconducting transition temperature of 800 mK and a critical field of 17.7 ± 0.5 mT, as probed by transport and magnetometry. Understanding and navigating the growth of the chemically and structurally diverse classes of ternary chalcogenides open a vast space for discovering new phenomena and enabling new applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗