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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

A Coupled Experimental and Simulation Approach to Investigate the Impact of Grain Growth, Amorphization, and Grain Subdivision in Accident Tolerant U 3 Si 2 Light Water Reactor Fuel

Triuranium disilicide (U 3 Si 2 ) is being considered as an alternative accident tolerant fuel (ATF) due to its higher thermal conductivity. However, there is uncertainty in its use due to a lack of irradiation data at light water reactor (LWR) conditions. In this project, we used an integrated experimental and simulation approach to answer two significant questions pertaining to U 3 Si 2 that were not investigated by the Fuel Cycle Research and Development (FCRD) and Nuclear Energy Advanced Modeling and Simulation (NEAMS) programs: (1) Will grain growth in the hotter portions of the fuel significantly impact U 3 Si 2 LWR fuel behavior? (2) Under what conditions do grain subdivision and amorphization occur in U 3 Si 2 and will either occur at LWR conditions? Our approach to answer these questions used in situ ion irradiation and annealing to investigate grain growth, grain subdivision, and amorphization, along with mesoscale simulations using the MARMOT tool. We found that while the grain boundary mobility of U 3 Si 2 is larger than that of UO 2 , grain growth in U 3 Si 2 fuel pellets will be less than in UO 2 and may be neglected due to the lower thermal conductivity and thus lower centerline temperature. We also found that amorphization will not occur in U 3 Si 2 above 600 K, such that it is not likely to occur at typical LWR operating conditions. Grain subdivision will occur at LWR conditions and will likely occur at lower burnups than in UO 2 .

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Polymeric Electron-Selective Contact for Crystalline Silicon Solar Cells with an Efficiency Exceeding 19%

Carrier-selective contacts have become a prominent path forward toward efficient crystalline silicon (c-Si) photovoltaics. Among the proposed contacting materials, organic materials may offer simplified and low-cost processing compared with typical vacuum deposition techniques. In this paper, branched polyethylenimine (b-PEI) is presented as an electron-transport layer (ETL) for c-Si solar cells. The incorporation of a b-PEI interlayer between c-Si(n) and Al leads to a low contact resistivity of 24 mΩ cm 2 . A silicon heterojunction solar cell integrated with b-PEI is demonstrated achieving a power conversion efficiency of 19.4%, which improves the benchmark efficiency of a c-Si solar cell with an organic ETL. This electron selectivity of b-PEI is attributed to its Lewis basicity, i.e., electron-donating ability, promoting favorable band bending at the c-Si surface for electron transport. Moreover, several other Lewis base polymers perform as efficient ETLs in organic/c-Si hybrid devices, indicating Lewis basicity could be a guideline for future organic ETL design.

14 SOLAR ENERGY↗
NASA NTRS1991

Performance, size, mass, and cost estimates for projected 1kW EOL Si, InP, and GaAs arrays

One method of evaluating the potential of emerging solar cell and array technologies is to compare their projected capabilities in space flight applications to those of established Si solar cells and arrays. Such an application-oriented comparison provides an integrated view of the elemental comparisons of efficiency, radiation resistance, temperature sensitivity, size, mass, and cost in combination. In addition, the assumptions necessary to make the comparisons provide insights helpful toward determining necessary areas of development or evaluation. Finally, as developments and evaluations progress, the results can be used in more precisely defining the overall potential of the new technologies in comparison to existing technologies. The projected capabilities of Si, InP, and GaAs cells and arrays are compared.

Slifer, Luther W., Jr.↗
DOE OSTI2025

Multiscale electro-chemo-mechanical model of high-capacity amorphous silicon anode material in sodium-ion batteries

The growing interest in sodium-ion batteries (SIBs) is fueled by their abundant resources and environmentally friendly nature, with amorphous silicon (a-Si) emerging as a promising anode material for enhancing capacity. However, the key challenge lies in sustaining reversible capacity during cycling. Here, in this work, we developed a multiscale electrochemical model incorporating an a-Si anode to elucidate the performance parameters of SIBs. Additionally, we integrated an electro-chemo-mechanical model at the particle level to capture stress generation, an essential factor in the degradation of high-capacity electrodes. Unlike existing models, our approach accounts for large-deformation chemo-mechanics at the particle scale and includes simulations under varying charge rates to explore multiscale behavior. The results reveal that coupled sodiation significantly prolongs complete cycling times and influences discharge dynamics, indicating that neglecting this coupling leads to an underestimation of actual capacity. Furthermore, we observed pronounced polarization effects at higher charge rates, resulting in heterogeneous stress distributions across the anode. With the identification of critical failure parameters for both active particles and binder materials, offering novel insights for mitigating degradation in high-capacity electrode systems.

Amorphous silicon anode↗
DOE OSTI2025

From prediction to experimental realization of ferroelectric wurtzite Al1− x Gd x N alloys

AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors, such as Si, SiC, and III–Vs, enabling compute-in-memory architectures, high-density data storage, and more. The discovery of AlN-based wurtzite ferroelectrics has been driven to date by chemical intuition and empirical explorations. Here, we demonstrate the computationally-guided discovery and experimental demonstration of new ferroelectric wurtzite Al1−xGdxN alloys. First-principles calculations indicate that the minimum energy pathway for switching changes from a collective to an individual switching process with a lower overall energy barrier, at a rare-earth fraction x with x > 0.10–0.15. Experimentally, ferroelectric switching is observed at room temperature in Al1−xGdxN films with x > 0.12, which strongly supports the switching mechanisms in wurtzite ferroelectrics proposed previously [Lee et al., Sci. Adv. 10, eadl0848 (2024)]. This is also the first demonstration of ferroelectricity in an AlN-based alloy with a magnetic rare-earth element, which could pave the way for additional functionalities such as multiferroicity and opto-ferroelectricity in this exciting class of AlN-based materials.

36 MATERIALS SCIENCE↗
NASA NTRS2007

The James Webb Space Telescope

The James Webb Space Telescope (JWST) is a 6.6m diameter, segmented, deployable telescope for cryogenic IR space astronomy (approx.40K). The JWST Observatory architecture includes the Optical Telescope Element and the Integrated Science Instrument Module (ISIM) element that contains four science instruments (SI) including a Guider. The ISIM optical metering structure is a roughly 2.2x1.7x2.2mY, asymmetric frame that is composed of carbon fiber and resin tubes bonded to invar end fittings and composite gussets and clips. The structure supports the SIs, isolates the SIs from the OTE, and supports thermal and electrical subsystems. The structure is attached to the OTE structure via strut-like kinematic mounts. The ISM structure must meet its requirements at the approx.40K cryogenic operating temperature. The SIs are aligned to the structure s coordinate system under ambient, clean room conditions using laser tracker and theodolite metrology. The ISM structure is thermally cycled for stress relief and in order to measure temperature-induced mechanical, structural changes. These ambient-to-cryogenic changes in the alignment of SI and OTE-related interfaces are an important component in the JWST Observatory alignment plan and must be verified.

Nowak, Maria↗
NASA NTRS2007

Photogrammetric Metrology for the James Webb Space Telescope Integrated Science Instrument Module

The James Webb Space Telescope (JWST) is a 6.6m diameter, segmented, deployable telescope for cryogenic IR space astronomy (approximately 40K). The JWST Observatory architecture includes the Optical Telescope Element and the Integrated Science Instrument Module (ISIM) element that contains four science instruments (SI) including a Guider. The ISM optical metering structure is a roughly 2.2x1.7x2.2m, asymmetric frame that is composed of carbon fiber and resin tubes bonded to invar end fittings and composite gussets and clips. The structure supports the SIs, isolates the SIs from the OTE, and supports thermal and electrical subsystems. The structure is attached to the OTE structure via strut-like kinematic mounts. The ISIM structure must meet its requirements at the approximately 40K cryogenic operating temperature. The SIs are aligned to the structure's coordinate system under ambient, clean room conditions using laser tracker and theodolite metrology. The ISIM structure is thermally cycled for stress relief and in order to measure temperature-induced mechanical, structural changes. These ambient-to-cryogenic changes in the alignment of SI and OTE-related interfaces are an important component in the JWST Observatory alignment plan and must be verified. We report on the planning for and preliminary testing of a cryogenic metrology system for ISIM based on photogrammetry. Photogrammetry is the measurement of the location of custom targets via triangulation using images obtained at a suite of digital camera locations and orientations. We describe metrology system requirements, plans, and ambient photogrammetric measurements of a mock-up of the ISIM structure to design targeting and obtain resolution estimates. We compare these measurements with those taken from a well known ambient metrology system, namely, the Leica laser tracker system. We also describe the data reduction algorithm planned to interpret cryogenic data from the Flight structure. Photogrammetry was selected from an informal trade study of cryogenic metrology systems because its resolution meets sub-allocations to ISIM alignment requirements and it is a non-contact method that can in principle measure six degrees of freedom changes in target location. In addition, photogrammetry targets can be readily related to targets used for ambient surveys of the structure. By thermally isolating the photogrammetry camera during testing, metrology can be performed in situ during thermal cycling. Photogrammetry also has a small but significant cryogenic heritage in astronomical instrumentation metrology. It was used to validate the displacement/deformation predictions of the reflectors and the feed horns during thermal/vacuum testing (90K) for the Microwave Anisotropy Probe (MAP). It also was used during thermal vacuum testing (100K) to verify shape and component alignment at operational temperature of the High Gain Antenna for New Horizons. With tighter alignment requirements and lower operating temperatures than the aforementioned observatories, ISIM presents new challenges in the development of this metrology system.

Nowak, Maria↗
NASA NTRS2016

Structural, Thermal, and Optical Performance (STOP) Modeling and Results for the James Webb Space Telescope Integrated Science Instrument Module

The James Webb Space Telescope includes the Integrated Science Instrument Module (ISIM) element that contains four science instruments (SI) including a Guider. We performed extensive structural, thermal, and optical performance(STOP) modeling in support of all phases of ISIM development. In this paper, we focus on modeling and results associated with test and verification. ISIMs test program is bound by ground environments, mostly notably the 1g and test chamber thermal environments. This paper describes STOP modeling used to predict ISIM system performance in 0g and at various on-orbit temperature environments. The predictions are used to project results obtained during testing to on-orbit performance.

structural↗
DOE OSTI2023

CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer

We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or H c2 (34.06 T boost in H c2 for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications.

36 MATERIALS SCIENCE↗
NASA NTRS1989

Molecular-Beam Epitaxy Of CrSi2 on Si(111)

Crystalline layers grown in commercial apparatus. Experiments show CrSi2 grown on (111) face of single-crystal Si substrate by molecular-beam epitaxy. Epitaxial CrSi2 produced thus far not in desired single-crystal form. Because CrSi2 semiconductor with band gap of 0.3 eV, experimental process potential for monolitic integration of microelectronic devices based on CrSi2 (e.g., infrared detectors) with signal-processing circuitry based on Si.

Fathauer, Robert W.↗
DOE OSTI2020

Ultrathin silicon oxide prepared by in-line plasma-assisted N 2 O oxidation (PANO) and the application for n-type polysilicon passivated contact

We develop a plasma-assisted nitrous-oxide (N 2 O) gas oxidation (PANO) method to prepare the ultrathin silicon oxide (SiO x ) for polysilicon (poly-Si) passivated contact. The effects of preparation conditions, including the substrate temperature, processing time, and plasma power, are studied. Afterwards, we integrate the PANO SiO x into the polysilicon passivated contact and optimize the passivation and contact performances. Excellent surface passivation with the n-type poly-Si and PANO SiO x on the n-type c-Si wafer is achieved by 880 °C annealing, which shows competitive passivation quality to the one with NASO SiO x . Champion implied open-circuit voltage (iV oc ) and single-sided recombination saturated current (J 0 ) reach 730 mV and 4.3 fA/cm 2 after crystallization; and they are further improved to 747 mV and 2.0 fA/cm 2 (3 × 10 15 cm -3 ) after subsequent AlO x /SiN x hydrogenation. Using transmission electron microscopy (TEM), we find that the thickness of PANO SiO x ranges 1.1–2.4 nm and the controlled nitric acid oxidized SiO x (NAOS) ranges 1.3–1.8 nm. The contact resistivity (ρ c ) is typically <10 mΩ cm 2 with the annealing temperature of >820 °C. Also, the crystallinity, phosphorous in-diffusion profile, and current-leaking density of the passivated contacts are investigated. In general, the PANO SiO x and in-situ doping amorphous silicon precursor can be fabricated in one PECVD system without additional equipment or transfer procedures, which is favorable for the high-efficiency, low-cost industrial manufacture.

14 SOLAR ENERGY↗
DOE OSTI2020

High-pressure structural behavior and elastic properties of U3Si5: A combined synchrotron XRD and DFT study

We present an integrated experimental and theoretical study of the structural behavior of U 3 Si 5 at highpressure conditions using angle-dispersive synchrotron X-ray diffraction (XRD) in a diamond anvil cell (DAC) and density functional theory (DFT) calculations. On increasing pressure, the ambient hexagonal structure of U 3 Si 5 with space group P6/mmm remains stable up to 16.7 GPa, the maximum pressure tested with DAC. The bulk modulus and the a- and c-axial moduli of U 3 Si 5 were experimentally determined to be 126 ± 4 GPa, 173 ± 8 GPa and 79.7 ± 4.3 GPa, respectively. Thus an anisotropy in the axial compressibility of U 3 Si 5 is observed with its c-axis being more compressible than the a-axis. Our DFT calculation results are in general agreement with the experimental values, including reproducing the compressibility anisotropy. A comparison of the bulk modulus of U 3 Si 5 to those of other U-Si compounds reveals a general trend that the bulk modulus of U-Si decreases with increasing U/(U+Si) ratio.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Intrinsic ferroelectricity in Y-doped HfO 2 thin films

Ferroelectric HfO 2 -based materials hold great potential for the widespread integration of ferroelectricity into modern electronics due to their compatibility with existing Si technology. Earlier work indicated that a nanometre grain size was crucial for the stabilization of the ferroelectric phase. This constraint, associated with a high density of structural defects, obscures an insight into the intrinsic ferroelectricity of HfO 2 -based materials. Here we demonstrate that stable and enhanced polarization can be achieved in epitaxial HfO 2 films with a high degree of structural order (crystallinity). In this work, an out-of-plane polarization value of 50 μC cm –2 has been observed at room temperature in Y-doped HfO 2 (111) epitaxial thin films, with an estimated full value of intrinsic polarization of 64 μC cm –2 , which is in close agreement with density functional theory calculations. The crystal structure of films reveals the $Pca2_1$ orthorhombic phase with small rhombohedral distortion, underlining the role of the structural constraint in stabilizing the ferroelectric phase. Our results suggest that it could be possible to exploit the intrinsic ferroelectricity of HfO 2 -based materials, optimizing their performance in device applications.

36 MATERIALS SCIENCE↗
NASA NTRS1969

The properties of nickel in silicon.

Active Ni centers properties in Si with emphasis on increasing and reducing minority carrier lifetime in silicon integrated circuits, discussing energy levels

Ghandhi, S. K.↗
NASA NTRS1974

Float zone processing in a weightless environment

Results are given for investigations into: (1) the physical limits which set the maximum practical diameters of Si crystals that can be processed by the float-zone method in a near weightless environment, and (2) the economic impact of large, space-produced Si crystals on the electronics industry. The stability of the melt is evaluated. Heat transfer and fluid flow within the melt as dependent on the crystal size and the degree and type of rotation imparted to the melt are studied. Methods of utilizing the weightless environment for the production of large, stress-free Si crystals of uniform composition are proposed. The economic effect of large size Si crystals, their potential applications, likely utilization and cost advantages in LSI, integrated circuits, and power devices are also evaluated. Foreseeable advantages of larger diameter wafers of good characteristics and the possibilities seen for greater perfection resulting from stress-free growth are discussed.

Fowle, A. A.↗
NASA NTRS1980

Modified Reference SPS with Solid State Transmitting Antenna

The development of solid state microwave power amplifiers for a solar power satellite transmitting antenna is discussed. State-of-the-art power-added efficiency, gain, and single device power of various microwave solid state devices are compared. The GaAs field effect transistors and the Si-bipolar transistors appear potentially feasible for solar power satellite use. The integration of solid state devices into antenna array elements is examined and issues concerning antenna integration and consequent satellite configurations are examined.

Woodcock, G. R.↗
NASA NTRS1980

Development of simplified process for environmentally resistant cells

This report describes a program to develop a simple, foolproof, all vacuum solar cell manufacturing process which can be completely automated and which results in medium efficiency cells which are inherently environmentally resistant. All components of the completed cells are integrated into a monolithic structure with no material interfaces. The exposed materials (SI, Al2O3, Al, Ni) are all resistant to atmospheric attack and the junction, per se, is passivated to prevent long term degradation. Such cells are intended to be incorporated into a simple module consisting basically of a press formed metallic superstructure with a separated glass cover for missile, etc., protection.

King, W. J.↗
NASA NTRS1996

A low-noise micromachined millimeter-wave heterodyne mixer using Nb superconducting tunnel junctions

A heterodyne mixer with a micromachined horn antenna and a superconductor-insulator- superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si(3)N(4) dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30 +/- 3 K (without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.

DeLange, Gert↗