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DOE OSTI2021

Mid-infrared Pulsed Upconversion Imaging in a Rotating Detonation Combustor

To meet the challenges associated with performing mid-InfraRed (IR) imaging in Rotating Detonation Combustors (RDCs), a novel pulsed mid-IR UpConversion Imaging (UCI) diagnostic has been implemented. UCI is an alternative to direct mid-IR detection that uses nonlinear optical frequency mixing to shift mid-IR wavelengths carrying a target image to shorter wavelengths that can be imaged with high-performance silicon-based CCD/CMOS cameras. This approach offers several favorable properties including high spectral selectivity, high temporal resolution, and superior low-light detectivity. A hydrogen-air research RDC was operated with carbon dioxide addition to allow pulsed UCI imaging of mid-IR luminosity within the combustion channel from spontaneous thermal emissions. The resulting measurements demonstrate high spatiotemporal resolution capable of imaging small structures near the supersonically propagating detonation wave front. The results show how this technique can be used to observe sharp gradients and millimeter-scale structures in the high-temperature, high-pressure zones RDC flow fields.

White, Logan W.↗

DOE OSTI2024

Secondary-electron imaging of bulk crystalline specimens in an aberration corrected $\text{STEM}$

Atomic-scale electron microscopy traditionally probes thin specimens, with thickness below 100 nm, and its feasibility for bulk samples has not been documented. Here in this study, we explore the practicality of scanning transmission electron microscope (STEM) imaging with secondary electrons (SE), using a silicon-wedge specimen having a maximum thickness of 18 μm. We find that the atomic structure is present in the entire thickness range of the SE images although the background intensity increases moderately with thickness. The consistent intensity of secondary electron (SE) images at atomic positions and the modest increase in intensity in between (background) observed in silicon suggest a limited contribution from SEs generated by backscattered electrons, a conclusion supported by our multislice calculations. We conclude that achieving atomic resolution in SE imaging for bulk specimens is indeed attainable using aberration-corrected STEM and that an aberration-corrected scanning electron microscope (SEM) may have the capacity for atomic-level resolution, holding great promise for future strides in materials research.

25 ENERGY STORAGE↗

DOE OSTI2022

Pinhole‐Free Ultrathin Silicon Oxide Layer by Ozone‐Dissolved Deionized Water

The pinhole‐free silicon oxide (SiO x ) layer grown using dissolved ozone in deionized water (DI‐O 3 ) is demonstrated. An ultrathin SiO x layer of thickness 1.53 nm ± 1.5% is grown on silicon wafer using 7 ppm DI‐O 3 . A four‐step methodology, including 25 wt% aq. tetramethylammonium hydroxide (TMAH) solution at 80 °C, is employed to magnify the pinhole signatures in the underlying silicon and visualized with dark‐field optical microscopy (DFOM) and scanning electron microscopy (SEM). The DFOM images show spots on the surface of wafer that originate from airborne particles, contamination, etc. SEM images reveal the absence of etch pits in silicon even after etching of SiO x /silicon in TMAH for 300 s. The minority carrier lifetime and interface states density in AlO x ‐capped SiO x /Si structure are ≥2 ms at carrier density of 1 × 10 15 cm −3 and less than 2 × 10 11 cm −2 eV −1 , respectively.

42 ENGINEERING↗

DOE OSTI2024

Optical contrast analysis of α -RuCl 3 nanoflakes on oxidized silicon wafers

α-RuCl 3 , a narrow-band Mott insulator with a large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl 3 nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl 3 nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl 3 nanoflakes with thicknesses below 100 nm on SiO 2 /Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl 3 nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of –0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl 3 thickness.

2D materials↗

NASA NTRS1992

Development of hard X-ray optics

Studies of cosmic X-ray sources have suffered from lack of focussing optics in the hard X-ray spectral region (E above 10 keV); in the absence of imaging optics, celestial X-rays are masked by the cosmic ray background, which severely degrades the detector sensitivity. There are several possible ways to develop grazing incidence imaging optics for this spectral region; we describe here one approach which utilizes numerous large diameter silicon wafers to form a flat-plate imaging telescope. A prototype imager of this type has been constructed, and we present measurements of surface quality, coalignment accuracy, and imaging ability.

Joy, Marshall↗

NASA NTRS2004

Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs

An improved process that includes a high-temperature bonding subprocess has been developed to enable the fabrication of robust, flat, silicon-based charge-coupled devices (CCDs) for imaging in ultraviolet (UV) light and/or for detecting low-energy charged particles. The CCDs in question are devices on which CCD circuitry has already been formed and have been thinned for backsurface illumination. These CCDs may be delta doped, and aspects of this type of CCD have been described in several prior articles in NASA Tech Briefs. Unlike prior low-temperature bonding subprocesses based on the use of epoxies or waxes, the high-temperature bonding subprocess is compatible with the deltadoping process as well as with other CCD-fabrication processes. The present improved process and its bonding, thinning, and delta-doping subprocesses, are characterized as postfabrication processes because they are undertaken after the fabrication of CCD circuitry on the front side of a full-thickness silicon substrate. In a typical case, it is necessary to reduce the thickness of the CCD to between 10 and 20 m in order to take advantage of back-side illumination and in order to perform delta doping and/or other back-side treatment to enhance the quantum efficiency. In the prior approach to the fabrication of back-side-illuminated CCDs, the thinning subprocess turned each CCD into a free-standing membrane that was fragile and tended to become wrinkled. In the present improved process, prior to thinning and delta doping, a CCD is bonded on its front side to a silicon substrate that has been prefabricated to include cutouts to accommodate subsequent electrical connections to bonding pads on the CCD circuitry. The substrate provides structural support to increase ruggedness and maintain flatness. At the beginning of this process, the back side of a CCD as fabricated on a full-thickness substrate is polished. Silicon nitride is deposited on the back side, opposite the bonding pads on the front side, in order to define a relatively thick frame. The portion of the CCD not covered by the frame is the portion to be thinned by etching.

Grunthaner, Paula↗

DOE OSTI2024

Cherenkov photon background for low-noise silicon detectors in space

Future space observatories dedicated to direct imaging and spectroscopy of extra-solar planets will require ultra-low-noise detectors that are sensitive over a broad range of wavelengths. Silicon charge-coupled devices (CCDs), such as EMCCDs, Skipper CCDs, and Multi-Amplifier Sensing CCDs, have demonstrated the ability to detect and measure single photons from ultra-violet to near-infrared wavelengths, making them candidate technologies for this application. In this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic charged particles traversing a silicon detector. In the intense radiation environment of space, energetic cosmic rays produce high-energy tracks and more extended halos of low-energy Cherenkov photons, which are detectable with ultra-low-noise detectors. We present a model of this effect that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low noise silicon detectors in space. We find that the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds that have previously been considered.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

NASA NTRS1988

Improved Charge-Coupled Imager For X Rays

Device proposed to improve imaging of x rays. Features thin layer of oxide in virtual phase to increase quantum efficiency and depletion layer nearly as thick as epitaxial silicon layer to increase resolution. Applications include imaging spectrometers for x-ray astronomy, investigations of plasmas, and x-ray crystallography.

Wadsworth, Mark↗

DOE OSTI2020

High dynamic range CdTe mixed-mode pixel array detector (MM-PAD) for kilohertz imaging of hard x-rays

A hard x-ray, high-speed, high dynamic range scientific x-ray imager is described. The imager is based on the mixed-mode pixel array detector (MM-PAD) readout chip coupled to a 750 µm thick cadmium telluride (CdTe) sensor. The full imager is a 2 × 3 tiled array of MM-PAD sensor/readout chip hybrids. CdTe improves detection for high energy x-rays as compared to silicon sensors, enabling efficient x-ray imaging to extend to >100 keV. The detector is capable of 1 kHz imaging and in-pixel circuitry has been designed to allow for well depths of greater than 4 × 10 6 80 keV x-rays. Here, a charge integrating front-end allows for quantitative measurement of high flux x-ray images beyond the capabilities of photon counting detectors. Detector performance is summarized and experimental measurements are presented.

99 GENERAL AND MISCELLANEOUS↗

DOE OSTI2021

Anisotropic neutron response of trans-stilbene and impact on a handheld dual particle imager

Here this manuscript details measurements of the anisotropic light-output response of trans-stilbene, henceforth referred to as stilbene, along the three primary crystal planes and analyzes how this anisotropic response impacts neutron image reconstruction in a handheld dual particle imager (H2DPI). A prototype H2DPI composed of stilbene pillars (6 x 6 x 50 mm 3 ) coupled to silicon photomultipliers was built and is capable of imaging both fast neutrons and gamma rays from kilogram quantities of special nuclear material. Stilbene was chosen as the scintillating medium for the imager because of its pulse shape discrimination capability, time resolution and relatively high light output. A drawback to using stilbene, however, is the anisotropic response. A recoiling proton from a neutron elastic-scattering event in stilbene will yield different amounts of scintillation light depending on the direction of the recoiling proton with respect to the crystal lattice. This manuscript analyzes how this anisotropic response impacts neutron image reconstruction in 4π. The light output in the three primary crystal planes of stilbene were independently measured 6–7 times for proton recoil energies ranging from 0.5–5.0 MeV using a quasi-monoenergetic time-of-flight neutron source. The measured light-output data in the three crystal planes were fit with a semi-empirical function based on Birks’ formula. These fits were used to reconstruct the location of a 252 Cf source in front of the imager (0°, -0.8°), to the left of the imager (-90°, -0.8°) and directly above the imager (0°, 90°) to determine if it is necessary to apply the directionally-dependent response of stilbene to accurately reconstruct source locations. A bootstrapping technique was applied to the measured data sets to produce 1000 images composed of 2000 cone projections for each source location and each measured light-output curve. List-mode maximum likelihood expectation maximization was applied to each image; the highest pixel location and the full width at half maximum (FWHM) were then recorded. The average and standard deviations of these parameters were taken for each set of images. The maximum difference in the average azimuthal pixel location when varying between the appropriate and incorrect light-output curves for the source locations at (0°, -0.8°) and (-90°, -0.8°) were respectively found to be 1.85 ± 1.39° and 2.03 ± 1.78°. All other pixel locations and FWHMs were within a single standard deviation of uncertainty. Taken together, the anisotropic response of stilbene has negligible impact on the neutron image reconstruction capability of the H2DPI.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

NASA NTRS1989

Apparent limitations of head-up-displays and thermal imaging systems

A simulated helicopter flight through a slalom course was presented on a Silicon Graphics IRIS 3130. The display represented the major visual characteristics of thermal images. Subjects were asked to maintain a designated altitude, while flying a slalom course between regularly spaced pylons. The presence of some of the high frequency details in the image improved subjects' ability to reach and maintain the correct altitude. A head-up-display helped in maintaining altitude, but impaired maneuvering around the poles. The results are interpreted in terms of the competition for visual resources between the HUD and the world view.

Brickner, Michael S.↗

NASA NTRS1989

Ultrasonic imaging of porosity variations produced during sintering

A silicon carbide disk was sintered from 2090 to 2190 C in 25-C steps. After each sintering step, the disk was examined using a precision acoustic scanning system to determine acoustic attenuation and velocity. The bulk density was found to vary nonmonotonically with sintering temperature. The density varied as much as 10 percent from its value at 2090 C during the sintering process. Local density fluctuations occurred in an organized and history-dependent way. These local density fluctuations varied up to + or - 7 percent of the bulk density and were made visible by acoustic attenuation and velocity mapping.

Generazio, Edward R.↗

NASA NTRS2011

Cryo-Etched Black Silicon for Use as Optical Black

Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

Yee, Karl Y.↗

DOE OSTI2025

Characterization of the Cherenkov Photon Background for Low-noise Silicon Detectors in Space

Future space observatories that seek to perform imaging and spectroscopy of faint astronomical sources will require ultra-low-noise detectors that are sensitive over a broad wavelength range. Silicon charge-coupled devices (CCDs), such as EMCCDs, skipper CCDs, multi-amplifier sensing CCDs, and single-electron sensitive read out CCDs have demonstrated the ability to detect and measure single photons from X-ray energies to near the silicon band gap (∼1.1 μm), making them candidate technologies for this application. Here, in this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic cosmic rays traversing a silicon detector. We present a model for Cherenkov photon production and absorption that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low-noise silicon detectors in space. We study how the Cherenkov background rate depends on detector thickness, variations in solar activity, and the contribution of heavy cosmic ray species (Z > 2). We find that for thick silicon detectors, such as those required to achieve high quantum efficiency at long wavelengths, the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds. We apply our Cherenkov background model to simulated spectroscopic observations of extra-solar planets, and we find that thick detectors continue to outperform their thinner counterparts at longer wavelengths despite a larger Cherenkov background rate. Furthermore, we find that minimal masking of cosmic-ray tracks continues to maximize the signal-to-noise ratio of very faint sources despite the existence of extended halos of Cherenkov photons.

Astronomical detectors↗

DOE OSTI2024

Nano-infrared imaging of epitaxial graphene on SiC revealing doping and thickness inhomogeneities

Here, we report on a nano-infrared (IR) imaging and spectroscopy study of epitaxial graphene on silicon carbide (SiC) by using scattering-type scanning near-field optical microscopy (s-SNOM). With nano-IR imaging, we reveal in real space microscopic domains with distinct IR contrasts. By analyzing the nano-IR, atomic force microscopy, and scanning tunneling microscopy imaging data, we conclude that the imaged domains correspond to single-layer graphene, bilayer graphene (BLG), and higher-doped BLG. With nano-IR spectroscopy, we find that graphene can screen the SiC phonon resonance, and the screening is stronger at more conductive sample regions. Our work offers insights into the rich surface properties of epitaxial graphene and demonstrates s-SNOM as an efficient and effective tool in characterizing graphene and possibly other two-dimensional materials.

2D materials↗

DOE OSTI2023

Capacitance Transients, Photoconductive Decay, and Impedance Spectroscopy on 19% to 22% Efficient Silicon Solar Cells

High efficiency silicon solar cells are characterized using current-voltage curves, electroluminescence imaging, impedance spectroscopy, capacitance transients, microwave photoconductive decay, and time-resolved photoluminescence imaging. The sample set is composed of cells from different manufacturers and includes an n-type silicon heterojunction (SHJ), an n-type passivated emitter rear totally diffused (PERT), and five different p-type passivated emitter rear contact (PERC) cells. Carrier lifetimes, both photoconductivity and photoluminescence, are measured co-located with the light excitation pulse and within the cell but away from the light spot. Luminescence intensity and excess carrier lifetimes correlate to cell voltage. The capacitance transient time constants correlate to the capacitance values extracted from impedance spectroscopy.

capacitance↗

DOE OSTI2023

Capacitance Transients, Photoconductive Decay, and Impedance Spectroscopy on 19% to 22% Efficient Silicon Solar Cells

capacitance↗

NASA NTRS2002

Charge-coupled device for low background observations

A charge-coupled device with a low-emissivity metal layer located between a sensing layer and a substrate provides reduction in ghost images. In a typical charge-coupled device of a silicon sensing layer, a silicon dioxide insulating layer, with a glass substrate and a metal carrier layer, a near-infrared photon, not absorbed in the first pass, enters the glass substrate, reflects from the metal carrier, thereby returning far from the original pixel in its entry path. The placement of a low-emissivity metal layer between the glass substrate and the sensing layer reflects near infrared photons before they reach the substrate so that they may be absorbed in the silicon nearer the pixel of their points of entry so that the reflected ghost image is coincident with the primary image for a sharper, brighter image.

Loh, Edwin D.↗