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At least 163 records · Page 9

Micromachined Dust Traps

Micromachined traps devised to capture dust particles for analysis without contaminating them. Based on micromachined structures retaining particles, rather than adhesives or greases interfering with scanning-electron-microscope analysis or x-ray imaging. Unlike maze traps and traps enmeshing particles in steel wool or similar materials, micromachined traps do not obscure trapped particles. Internal geometries of traps range from simple cones to U-shapes, all formed by etching silicon.

Bearman, Gregory H.↗

Artificial Hair Cells for Sensing Flows

The purpose of this article is to present additional information about the flow-velocity sensors described briefly in the immediately preceding article. As noted therein, these sensors can be characterized as artificial hair cells that implement an approximation of the sensory principle of flow-sensing cilia of fish: A cilium is bent by an amount proportional to the flow to which it is exposed. A nerve cell at the base of the cilium senses the flow by sensing the bending of the cilium. In an artificial hair cell, the artificial cilium is a microscopic cantilever beam, and the bending of an artificial cilium is measured by means of a strain gauge at its base (see Figure 1). Figure 2 presents cross sections of a representative sensor of this type at two different stages of its fabrication process. The process consists of relatively- low-temperature metallization, polymer-deposition, microfabrication, and surface-micromachining subprocesses, including plastic-deformation magnetic assembly (PDMA), which is described below. These subprocesses are suitable for a variety of substrate materials, including silicon, some glasses, and some polymers. Moreover, because it incorporates a polymeric supporting structure, this sensor is more robust, relative to its silicon-based counterparts.

Chen, Jack↗

JTEC Panel report on microelectromechanical systems in Japan

This report summarizes recent activities in the development of microelectromechanical systems (MEMS) in Japan. For the purposes of this study, 'MEMS' means batch-fabricated miniature devices that convert physical parameters to or from electrical signals and that depend on mechanical structures or parameters in important ways for their operation. The report covers advanced materials and process technology; sensors and sensing microstructures; microactuators and actuation mechanisms; sensor-circuit integration and system partitioning; advanced packaging, microassembly, and testing technologies; and MEMS design techniques, applications, and infrastructure. The panel found that Japanese industry is emphasizing approaches to MEMS that are similar to those taken by U.S. industry (i.e., approaches based on silicon integrated-circuit technology); these efforts are comparable in their level of development to those in the United States. However, the ten-year, $250 million, MITI-sponsored program in micromachines emphasizes the miniaturization of more traditional (nonlithographic) machining processes, an area in which there is no comparable U.S. effort. Packaging technology and applications for batch-fabricated MEMS devices is considered a major challenge in both countries. The panel concluded that these and other issues will require global leadership and international cooperation to realize the benefits of MEMS in a timely way.

Wise, Kensall D.↗

Microfabricated Chemical Gas Sensors and Sensor Arrays for Aerospace Applications

Aerospace applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. In particular, factors such as minimal sensor size, weight, and power consumption are particularly important. Development areas which have potential aerospace applications include launch vehicle leak detection, engine health monitoring, and fire detection. Sensor development for these applications is based on progress in three types of technology: 1) Micromachining and microfabrication (Microsystem) technology to fabricate miniaturized sensors; 2) The use of nanocrystalline materials to develop sensors with improved stability combined with higher sensitivity; 3) The development of high temperature semiconductors, especially silicon carbide. This presentation discusses the needs of space applications as well as the point-contact sensor technology and sensor arrays being developed to address these needs. Sensors to measure hydrogen, hydrocarbons, nitrogen oxides (NO,), carbon monoxide, oxygen, and carbon dioxide are being developed as well as arrays for leak, fire, and emissions detection. Demonstrations of the technology will also be discussed. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

Hunter, Gary W.↗

Development of Microfabricated Chemical Gas Sensors and Sensor Arrays for Aerospace Applications

Aerospace applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. In particular, factors such as minimal sensor size, weight, and power consumption are particularly important. Development areas which have potential aerospace applications include launch vehicle leak detection, engine health monitoring, fire detection, and environmental monitoring. Sensor development for these applications is based on progress in three types of technology: 1) Micromachining and microfabrication (Microsystem) technology to fabricate miniaturized sensors. 2) The use of nanocrystalline materials to develop sensors with improved stability combined with higher sensitivity. 3) The development of high temperature semiconductors, especially silicon carbide. However, due to issues of selectivity and cross-sensitivity, individual sensors are limited in the amount of information that they can provide in environments that contain multiple chemical species. Thus, sensor arrays are being developed to address detection needs in such multi-species environments. This paper discusses the needs of space applications as well as the point-contact sensor technology and sensor arrays being developed to address these needs. Sensors to measure hydrogen, hydrocarbons, hydrazine, nitrogen oxides (NO,), carbon monoxide, oxygen, and carbon dioxide are being developed as well as arrays for leak, fire, and emissions detection. Demonstrations of the technology will also be discussed. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

Hunter, G. W.↗

Development and Application of Microfabricated Chemical Gas Sensors For Aerospace Applications

Aerospace applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. In particular, factors such as minimal sensor size, weight, and power consumption are particularly important. Development areas which have potential aerospace applications include launch vehicle leak detection, engine health monitoring and control, and fire detection. Sensor development for these applications is based on progress in three types of technology: 1) Micromachining and microfabrication (Microsystem) technology to fabricate miniaturized sensors. 2) The use of nanocrystalline materials to develop sensors with improved stability combined with higher sensitivity. 3) The development of high temperature semiconductors, especially silicon carbide. Sensor development for each application involves its own challenges in the fields of materials science and fabrication technology. This paper discusses the needs of space applications and the point-contact sensor technology being developed to address these needs. Sensors to measure hydrogen, hydrocarbons, nitrogen oxides (Nox, carbon monoxide, oxygen, and carbon dioxide are being developed. A description is given of each sensor type and its present stage of development. Demonstration and application these sensor technologies will be described. The demonstrations range from use of a microsystem based hydrogen sensor on the Shuttle to engine demonstration of a nanocrystalline based sensor for NO, detection. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

Hunter, G. W.↗

Microfabricated Chemical Sensors for Aerospace Fire Detection Applications

The detection of fires on-board commercial aircraft is extremely important for safety reasons. Although dependable fire detection equipment presently exists within the cabin, detection of fire within the cargo hold has been less reliable and susceptible to false alarms. A second, independent method of fire detection to complement the conventional smoke detection techniques, such as the measurement of chemical species indicative of a fire, will help reduce false alarms and improve aircraft safety. Although many chemical species are indicative of a fire, two species of particular interest are CO and CO2. This paper discusses microfabricated chemical sensor development tailored to meet the needs of fire safety applications. This development is based on progress in three types of technology: 1) Micromachining and microfabrication (Microsystem) technology to fabricate miniaturized sensors. 2) The use of nanocrystalline materials to develop sensors with improved stability combined with higher sensitivity. 3) The development of high temperature semiconductors, especially silicon carbide. The individual sensor being developed and their level of maturity will be presented.

Hunter, Gary W.↗

High energy collimating fine grids

The objective of this project was to demonstrate the fabrication of extremely tight tolerance collimating grids using a high-Z material, specifically tungsten. The approach taken was to fabricate grids by a replication method involving the coating of a silicon grid substrate with tungsten by chemical vapor deposition (CVD). A negative of the desired grid structure was fabricated in silicon using highly wafering techniques developed for the semiconductor industry and capable of producing the required tolerances. Using diamond wafering blades, a network of accurately spaced slots was machined into a single-crystal silicon surface. These slots were then filled with tungsten by CVD, via the hydrogen reduction of tungsten hexafluoride. Following tungsten deposition, the silicon negative was etched away to leave the tungsten collimating grid structure. The project was divided into five tasks: (1) identify materials of construction for the replica and final collimating grid structures; (2) identify and implement a micromachining technique for manufacturing the negative collimator replicas (performed by NASA/JPL); (3) develop a CVD technique and processing parameters suitable for the complete tungsten densification of the collimator replicas; (4) develop a chemical etching technique for the removal of the collimator replicas after the tungsten deposition process; and (5) fabricate and deliver tungsten collimating grid specimens.

Arrieta, Victor M.↗

Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for patterning can limit their absorption at THz frequencies and their heat capacity can be high. patterned absorber structures that offer low heat capacity, absence of aging, and uniform, predictable behavior at THz frequencies. We have correlated DC electrical and THz optical measurements of a series of implanted layers and studied their frequency dependence of optical absorption from .3 to 10 THz at cryogenic temperatures. We have modeled the optical response to determine the suitability of the implanted silicon resistor as a function of resistance in the range 10 Ohms/sq to 300 Ohms/sq.

Chervenak, J. A.↗

Low Power Polysilicon Sources for IR Applications

We have designed and fabricated polysilicon thin film infrared (IR) sources by micromachining technology. These sources are made with a lightly doped middle region for light emission and heavy doping of the supporting legs. The sources are fabricated on a 10 mm thick, low temperature process parameters in the fabrication of these silicon dioxide layer. Different doping levels were used to achieve various source resistances. From the power requirement to reach the required light emission versus source resistance curve it is seen that there exists a resistance value which minimizes the necessary input power.

Das, N. C.↗

Bulk Micromachined 6H-SiC High-g Piezoresistive Accelerometer Fabricated and Tested

High-g accelerometers are needed in certain applications, such as in the study and analysis of high-g impact landings and projectiles. Also, these accelerometers must survive the high electromagnetic fields associated with the all-electric vehicle technology needed for aerospace applications. The choice of SiC is largely due to its excellent thermomechanical properties over conventional silicon-based accelerometers, whose material properties inhibit applicability in high electromagnetic radiation and high temperatures (>150 C) unless more complex and sometimes costly packaging schemes are adopted. This work was the outcome of a NASA Glenn Research Center summer internship program, in collaboration with Cornell University and the Munitions Directorate of the U.S. Air Force in Eglin, Florida. It aimed to provide the enabling technology infrastructure (modeling, fabrication, and validation) for the implementation of SiC accelerometers designed specifically for harsh environments.

Okojie, Robert S.↗

SiGe/Si Monolithically Integrated Amplifier Circuits

With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.

Katehi, Linda P. B.↗

Project: Micromachined High-Frequency Circuits For Sub-mm-wave Sensors

A novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebysbev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 micron thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds.

Papapolymerou, Ioannis John↗

Radiation-Insensitive Inverse Majority Gates

To help satisfy a need for high-density logic circuits insensitive to radiation, it has been proposed to realize inverse majority gates as microscopic vacuum electronic devices. In comparison with solid-state electronic devices ordinarily used in logic circuits, vacuum electronic devices are inherently much less adversely affected by radiation and extreme temperatures. The proposed development would involve state-of-the-art micromachining and recent advances in the fabrication of carbon-nanotube-based field emitters. A representative three-input inverse majority gate would be a monolithic, integrated structure that would include three gate electrodes, six bundles of carbon nanotubes (serving as electron emitters) at suitable positions between the gate electrodes, and an overhanging anode. The bundles of carbon nanotubes would be grown on degenerately doped silicon substrates that would be parts of the monolithic structure. The gate electrodes would be fabricated as parts of the monolithic structure by means of a double-silicon-on-insulator process developed at NASA's Jet Propulsion Laboratory. The tops of the bundles of carbon nanotubes would lie below the plane of the tops of the gate electrodes. The particular choice of shapes, dimensions, and relative positions of the electrodes and bundles of carbon nanotubes would provide for both field emission of electrons from the bundles of carbon nanotubes and control of the electron current to obtain the inverse majority function, which is described in the paper.

Manohara, Harish↗

Fabricating and using a micromachined magnetostatic relay or switch

A micromachined magnetostatic relay or switch includes a springing beam on which a magnetic actuation plate is formed. The springing beam also includes an electrically conductive contact. In the presence of a magnetic field, the magnetic material causes the springing beam to bend, moving the electrically conductive contact either toward or away from another contact, and thus creating either an electrical short-circuit or an electrical open-circuit. The switch is fabricated from silicon substrates and is particularly useful in forming a MEMs commutation and control circuit for a miniaturized DC motor.

Tai, Yu-Chong↗

High-Power, High-Frequency Si-Based (SiGe) Transistors Developed

Future NASA, DOD, and commercial products will require electronic circuits that have greater functionality and versatility but occupy less space and cost less money to build and integrate than current products. System on a Chip (SOAC), a single semiconductor substrate containing circuits that perform many functions or containing an entire system, is widely recognized as the best technology for achieving low-cost, small-sized systems. Thus, a circuit technology is required that can gather, process, store, and transmit data or communications. Since silicon-integrated circuits are already used for data processing and storage and the infrastructure that supports silicon circuit fabrication is very large, it is sensible to develop communication circuits on silicon so that all the system functions can be integrated onto a single wafer. Until recently, silicon integrated circuits did not function well at the frequencies required for wireless or microwave communications, but with the introduction of small amounts of germanium into the silicon to make silicon-germanium (SiGe) transistors, silicon-based communication circuits are possible. Although microwavefrequency SiGe circuits have been demonstrated, there has been difficulty in obtaining the high power from their transistors that is required for the amplifiers of a transmitter, and many researchers have thought that this could not be done. The NASA Glenn Research Center and collaborators at the University of Michigan have developed SiGe transistors and amplifiers with state-of-the-art output power at microwave frequencies from 8 to 20 GHz. These transistors are fabricated using standard silicon processing and may be integrated with CMOS integrated circuits on a single chip. A scanning electron microscope image of a typical SiGe heterojunction bipolar transistor is shown in the preceding photomicrograph. This transistor achieved a record output power of 550 mW and an associated power-added efficiency of 33 percent at 8.4 GHz, as shown. Record performance was also demonstrated at 12.6 and 18 GHz. Developers have combined these state-of-the-art transistors with transmission lines and micromachined passive circuit components, such as inductors and capacitors, to build multistage amplifiers. Currently, a 1-W, 8.4-GHz power amplifier is being built for NASA deep space communication architectures.

Ponchak, George E.↗

NASA Tech Briefs, June 2013

Topics include: Cloud Absorption Radiometer Autonomous Navigation System - CANS, Software Method for Computed Tomography Cylinder Data Unwrapping, Re-slicing, and Analysis, Discrete Data Qualification System and Method Comprising Noise Series Fault Detection, Simple Laser Communications Terminal for Downlink from Earth Orbit at Rates Exceeding 10 Gb/s, Application Program Interface for the Orion Aerodynamics Database, Hyperspectral Imager-Tracker, Web Application Software for Ground Operations Planning Database (GOPDb) Management, Software Defined Radio with Parallelized Software Architecture, Compact Radar Transceiver with Included Calibration, Software Defined Radio with Parallelized Software Architecture, Phase Change Material Thermal Power Generator, The Thermal Hogan - A Means of Surviving the Lunar Night, Micromachined Active Magnetic Regenerator for Low-Temperature Magnetic Coolers, Nano-Ceramic Coated Plastics, Preparation of a Bimetal Using Mechanical Alloying for Environmental or Industrial Use, Phase Change Material for Temperature Control of Imager or Sounder on GOES Type Satellites in GEO, Dual-Compartment Inflatable Suitlock, Modular Connector Keying Concept, Genesis Ultrapure Water Megasonic Wafer Spin Cleaner, Piezoelectrically Initiated Pyrotechnic Igniter, Folding Elastic Thermal Surface - FETS, Multi-Pass Quadrupole Mass Analyzer, Lunar Sulfur Capture System, Environmental Qualification of a Single-Crystal Silicon Mirror for Spaceflight Use, Planar Superconducting Millimeter-Wave/Terahertz Channelizing Filter, Qualification of UHF Antenna for Extreme Martian Thermal Environments, Ensemble Eclipse: A Process for Prefab Development Environment for the Ensemble Project, ISS Live!, Space Operations Learning Center (SOLC) iPhone/iPad Application, Software to Compare NPP HDF5 Data Files, Planetary Data Systems (PDS) Imaging Node Atlas II, Automatic Calibration of an Airborne Imaging System to an Inertial Navigation Unit, Translating MAPGEN to ASPEN for MER, Support Routines for In Situ Image Processing, and Semi-Supervised Eigenbasis Novelty Detection.

Source record↗

MEMS Incandescent Light Source

A MEMS-based, low-power, incandescent light source is being developed. This light source is fabricated using three bonded chips. The bottom chip consists of a reflector on Silicon, the middle chip contains a Tungsten filament bonded to silicon and the top layer is a transparent window. A 25-micrometer-thick spiral filament is fabricated in Tungsten using lithography and wet-etching. A proof-of-concept device has been fabricated and tested in a vacuum chamber. Results indicate that the filament is electrically heated to approximately 2650 K. The power required to drive the proof-of-concept spiral filament to incandescence is 1.25 W. The emitted optical power is expected to be approximately 1.0 W with the spectral peak at 1.1 microns. The micromachining techniques used to fabricate this light source can be applied to other MEMS devices.

Tuma, Margaret↗