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We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
We present the results of single event effect (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
This is an update to the ongoing series of presentations tracking the state of domestic proton facility access for the purpose of single event effects (SEE) testing of microelectronics devices and systems. This includes proton research facilities and oncology therapy centers.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
This presentation reports the results of recent proton and heavy ion Single Event Effect (SEE) testing on a variety of COTS and non-COTs electronic devices and assemblies tested for the Space Shuttle, International Space Station (ISS) and Multi-Purpose Crew Vehicle (MPCV).
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics.This paper is a summary of test results.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Record, 1993. Trends in SEE susceptibility (including soft errors and latchup) for state-of- are evaluated.
The primary objective of the Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory (JPL) is to assist NASA in the selection of radiation hardened microelectronic parts for insertion in NASA space systems through radiation testing and research. Prior to presenting examples of the research and testing on Single Event Effects (SEE) and Total Ionizing Dose (TID) effects, the space radiation environment and radiation requirements for the CRAFT/Cassini program, a typical JPL space project, are discussed.
This describes the mechanisms behind the failure of 4H-SiC Power MOSFETs when struck by a heavy ion. The modeled device is designed to simulate a commercially available 1200 V power MOSFET and the ion simulated is a silver ion with a Linear Energy Transfer of 46 MeV-cm2/mg commonly used in single event effect (SEE) testing. The device is shown in simulation to fail near 500 V, which is in close agreement to experiments. These simulations go to show that the failure of SiC MOSFET occurs near the interface between the epi and substrate layers due to the rapid increase of the electric field in that region and destruction of the device from impact ionization. From this, two designs were proposed and investigated that would help to mitigate the electric field in these regions and improve the device's tolerance to single-event burnout (SEB). The new designs increased the voltage at which SEB occurs from 500 V to over 900 V and increased the Ron,sp by only 5%.
In the wake of the closure of the Indiana University Cyclotron Facility (IUCF), this presentation provides an overview of the options for North American proton facilities. This includes those in use by the aerospace community as well as new additions from the cancer therapy regime. In addition, proton single event testing background is provided for understanding the criteria needed for these facilities for electronics testing.
In the wake of the closure of the Indiana University Cyclotron Facility (IUCF), this presentation provides an overview of the options for North American proton facilities. This includes those in use by the aerospace community as well as new additions from the cancer therapy regime. In addition, proton single event testing background is provided for understanding the criteria needed for these facilities for electronics testing.
In the wake of the closure of the Indiana University Cyclotron Facility (IUCF), this presentation provides an overview of the options for North American proton facilities. This includes those in use by the aerospace community as well as new additions from the cancer therapy regime. In addition, proton single event testing background is provided for understanding the criteria needed for these facilities for electronics testing.
In the wake of the closure of the Indiana University Cyclotron Facility (IUCF), this presentation provides an overview of the options for North American proton facilities. This includes those in use by the aerospace community as well as new additions from the cancer therapy regime. In addition, proton single event testing background is provided for understanding the criteria needed for these facilities for electronics testing.
Hardness assurance test results of Intel state-of-the-art 14nm Broadwell U-series processor System-on-a-Chip (SoC) for total dose are presented, along with first-look exploratory results from trials at a medical proton facility. Test method builds upon previous efforts by utilizing commercial laptop motherboards and software stress applications as opposed to more traditional automated test equipment (ATE).
Hardness assurance test results of Intel state-of-the-art 14nm “Broadwell” U-series processor / System-on-a-Chip (SoC) for total ionizing dose (TID) are presented, along with exploratory results from trials at a medical proton facility. Test method builds upon previous efforts [1] by utilizing commercial laptop motherboards and software stress applications as opposed to more traditional automated test equipment (ATE).
Believe it or not, this has been a simplistic look at starting a checklist for SEE testing. Given a memory that has 68 operating modes, when a SEU occurs that changes the mode, just how do you determine what's going on? Laser and microbeam tests can help, but not easily for modern packaged devices. Expanding this approach to other more complex devices such as ADCs or processors as well as analog devices should be considered. The recommendation is to use the existing text standards as the starting point. Just make your own checklist for the device/technology/issues being considered. At HEART 2007, we presented some of the burgeoning challenges associated with single event effect(SEE) testing of modern commercial memories: a) Package, device complexity, test fixture, and data analysis issues were discussed; b) "Complete" SEE Characterization would take 15 years; c) Qualification test costs have a greater than 4 times increase over the last decade. In this talk, we continue to explore the roles of technology with an emphasis on the existing SEE Test Procedures and some of the concerns related to modern devices. The primary objective of the briefing is to provide some overarching guidance concerning the many considerations involved in the formulation of a SEE test plan provided in a " Checklist" format.we note that there is no such thing as a complete check list and that the best approach is to develop a flexible test plan that takes into account the device type and functions, the device technology, circuit and package design, and, of course, test facility and beam characteristics.