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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9

Sputtering of Surfaces by Ion Irradiation: A Comparison of Molecular Dynamics and Binary Collision Approximation Models to Laboratory Measurements

We compare various sputtering simulation methods to experimental results in both the low energy (<1 keV) and high energy (≥1 keV) impact regimes for argon ions impacting a pure copper substrate at normal incidence. Our results indicate that for high energy impacts, both binary collision approximation (BCA) and molecular dynamics methods can be used to generate reasonable predictions for the yield and energy distribution of the sputtered atoms. We also find reasonable agreement between the theoretical and experimental results down to impact energies of 600 eV. However, at 200 eV impact energies, significant discrepancies appear between the experimental and theoretical ejecta energy distributions in the peak position, the width of the energy distribution, and the magnitude of the high energy tail. These discrepancies appear to arise from the experimental results being only for atoms sputtered normal to the substrate surface, whereas the theoretical results are integrated over all 2π solid angles above the surface. Using the BCA code SDTrimSP and limiting the results to only atoms emitted within ±15° of the surface normal brings theory and experiment into reasonable agreement. These results suggest that for low energy impacts, the energy distribution of sputtered atoms is highly dependent on the emission angle of the ejecta.

Solar wind↗

The Influence of surface binding energy on sputtering in models of the sodium exosphere of Mercury

We have simulated the sodium (Na) exosphere of Mercury to show how the exosphere is affected by the assumed surface binding energy (SBE) of Na in the sputtered component. We constrained ion precipitation onto the surface using distributions for the cusp regions that are consistent with measurements by the MErcury Surface, Space ENvironment, GEochemistry, and Ranging Fast Imaging Plasma Spectrometer instrument. We have simulated sputtering with SBEs of 0.27, 2.6, 4.4, and 7.9 eV, with the lowest value commonly used in exosphere models and the highest from recent molecular dynamics calculations for the Na-bearing feldspar end-member, albite. A gradual change in the exosphere is seen as the yield decreases and the ejecta energy increases with increasing SBE. We describe the corresponding exosphere source functions for ion sputtering (IS), as well as for the previously studied processes of micrometeoroid impact vaporization and photon-stimulated desorption (PSD), along with their release energy distributions and spatial distributions. We have summed the contributions of the various source processes to explain how and when the different sources can be distinguished by observations. The modeled exosphere scale heights range from 72 km for PSD to over 1000 km for IS using a SBE of 7.9 eV. We find that the processes responsible for generating Mercury's Na exosphere are separable by measuring line-of-sight column densities tangent to the planet at various altitudes and positions around the planet. Our initial results are consistent with the Na being sputtered from a high-SBE material such as feldspar, which has been predicted to be abundant on the Mercury's surface.

Rosemary M. Killen↗

Deposition of ultrathick heavy-metal alloys on rotating substrates by high-power impulse magnetron sputtering: Target erosion effects

Sputter deposition of ultrathick (≈20μm) Au–Ta alloy coatings on sphero-cylindrical substrates is key for the fabrication of hohlraums for magnetically assisted inertial confinement fusion. In this work, we study the deposition of AuTa 4 alloy coatings onto rotating substrates. We use high-power impulse magnetron sputtering (HiPIMS) in a constant peak target voltage mode. Results show that the target erosion state has a strong impact on the dominant crystallographic phase, microstructure, surface morphology, and electrical resistivity of AuTa 4 films. This is due to effects of changes in the confining magnetic field with target erosion on the HiPIMS discharge characteristics and the sputter source output. We quantify these effects via plasma diagnostics and discuss the optimization of HiPIMS deposition of ultrathick films for cases when target erosion effects dominate film properties.

36 MATERIALS SCIENCE↗

Grid-Assisted Direct-Current Magnetron Sputtering of Titanium: Plasma Discharge Diagnostics

Grid-assisted magnetron sputtering is attractive for the deposition of ultrathick Be coatings in inertial confinement fusion (ICF) applications because it offers improved control over the plasma. Here, we investigate the plasma discharge characteristics of grid-assisted direct current magnetron sputtering with Ti as a surrogate sputter target material instead of Be. We map the magnetic field of our magnetron source assembly, study the current-voltage characteristics of both the source and the substrate, and measure the energy distributions of ions bombarding the film surface during growth. The results reveal a slightly asymmetric magnetic field of the magnetron source array and strong dependencies of the plasma discharge characteristics on both the grid and the substrate voltages. Positive grid voltage increases both target and substrate currents, increases the plasma potential, and broadens the energy distributions of ions bombarding the substrate. Grid biasing effects on the plasma discharge characteristics and substrate current can be attributed to corresponding changes to the plasma potential, while substrate biasing effects are more complex and nonlinear. Furthermore, these results demonstrate that grid-assisted deposition offers additional flexibility in controlling the deposition process for tuning properties of ultrathick films for ICF applications.

ICF targets↗

Easy Controlled Properties of Quaternary FeNiCrCd Thin Films Deposited from a Single dc Magnetron Sputtering Under the Influence of Deposition Rate

The quaternary FeNiCrCd thin films were produced from a single FeNiCrCr source on a commercial flexible polymer substrate using one dc magnetron sputtering technique. For that, a series of the films with a thickness of 50 nm were produced at different deposition rates of 0.02, 0.04, 0.06, and 0.08 nm/s, separately. In this study, as far as concerned, this was the first time that structural and magnetic properties of FeNiCrCd thin films were investigated. According to compositional analysis, the Fe and Cr contents slightly decreased with increasing deposition rate while Ni was almost constant, whereas those of the amount of Cd atoms increased. However, the atomic amounts of Fe and Cd in the films are quite different from those of the source material. The change of the atomic contents in the films from the source may be attributed to the relatively different bond energy/melting point of metals which have different contents sputtered from source material since this physical parameter is very significant for the sputtering process. For crystal structural analysis, a combination of hexagonal close-packed (hcp) and body-centered cubic (bcc) were observed. The peak intensity of the bcc-dominated planes decreased while the hcp-dominant plane increased since the change in peak intensities is compatible with the compositional analysis with increasing deposition rate. And, the grain sizes decreased gradually from 40.1 to 23.4 nm, with increasing deposition rate from 0.02, to 0.08 nm/s. Also, the film surfaces transformed from a rough to smooth surfaces with decreasing grain sizes as deposition rate increased. For magnetic analysis, the saturation magnetization M{sub s} values decreased as 1030, 773, 730, and 217 emu/cm{sup 3} with increasing deposition rate as 0.02, 0.04, 0.06, and 0.08 nm/s, respectively. In the same manner, the coercivity H{sub c} values were found as 11, 7, 6, and 2 Oe with the deposition rate of 0.02, 0.04, 0.06, and 0.08 nm/s, respectively. The decrease of the H{sub c} may have primarily come from the transformation of rough to smooth surface of the films. It may also be said that the films showed soft magnetic properties due to their low H{sub c} values with increasing deposition rate. Thus, the magnetic properties of the quaternary FeNiCrCd alloy films were seen to be easily improved with the deposition rate parameter for potential use in different industrial applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Protective Properties of Aluminum Nitride Coatings by DC-PVD Sputtering on Cu-10Al-13Mn Shape Memory Alloy

The AlN coating was applied on the surface of a Cu-10Al-13Mn alloy using the DC-PVD sputtering method. The substrate was set at three different temperatures which were ambient, 100 and 200 °C. The effect of the substrate temperature on the quality of AlN coating was modeled by simulating stress on the coating and substrate. The preparation, microstructure, and corrosion resistance of the coating were studied. The surface morphology and element distribution of the coating were investigated by scanning electron microscopy (SEM) and energy distribution spectroscopy (EDS), respectively. In addition, the corrosion resistance of coating was measured using electrochemical impedance spectroscopy (EIS) method in 1 M NaCl solution. The results showed that the AlN coating was formed on the Cu-10Al-13Mn alloy by DC-PVD sputtering method and the AlN coating considerably improved the corrosion resistance of Cu-10Al-13Mn alloy in the given corrosive media. According to EIS test, polarization resistance increased from approximately 1.6 to 115 KΩ, at 200 °C for uncoated and coated samples, respectively. Thus, corrosion resistance of AlN coating improved with the increase in the substrate temperature during the DC-PVD sputtering process.

36 MATERIALS SCIENCE↗

Mechanical and Frictional Performance of Ta and Ta-Ag Alloy Films Deposited at Different Sputtering Powers

The mechanical and tribological properties of tantalum and its alloy films are greatly influenced by their phase transformation. In this study, Ta and Ta-Ag films were prepared on carbon steel substrate by DC magnetron sputtering with various sputtering powers. The amorphous and nanocrystalline Ta and Ta-Ag film were produced at different sputtering powers from 40 to 110 W. The frictional properties of Ta and Ta-Ag films were investigated by rubbing against Si{sub 3}N{sub 4} ball from RT to 700 °C. The nanocrystalline Ta-Ag films shows higher hardness values (12 GPa) compared with amorphous phase. The nanocrystalline Ta90-Ag8 film shows a low friction coefficient of about 0.20-0.30 when rubbing against Si{sub 3}N{sub 4} ball at 700 °C. The segregation of Ag can effectively reduce friction coefficients of Ta-Ag film at 700 °C. The Ta-Ag films show high structure stability even after friction at 700 °C.

36 MATERIALS SCIENCE↗

Glass formation during combinatorial sputtering in binary alloys

Glass formation is a complex phenomenon influenced by thermodynamic and kinetic aspects, which are often controlled by extrinsic contributions. While bulk metallic glasses are typically multicomponent alloys, binary alloys offer a simplified approach to studying glass formation. In this study, we fabricated 57 binary alloy systems through combinatorial sputtering, where each alloy system is represented in 66 different alloys. We developed an automated analysis to determine structure and composition using X-ray diffraction and energy-dispersive X-ray spectroscopy for over 3700 alloys. We found that ∼17 % of the alloys form glasses under the estimated cooling rate during sputtering of ∼10 8 K/s. Data analysis revealed that commonly used factors like atomic size ratio and heat of mixing are ineffective in predicting glass formation. However, the crystal structure mismatch of the alloys’ elements emerged as the strongest indicator of glass formation under sputtering conditions of binary alloys. Here, the differences in glass formation under slow cooling rates used for bulk glass formation and the here observed glass formation under rapid cooling rates are discussed.

Binary alloys↗

Electrochemical stability, physical, and electronic properties of thermally pre-formed oxide compared to artificially sputtered oxide on Fe thin films in aqueous chloride

Here the electrochemical stability and corrosion behavior of the thermally pre-oxidized and sputter deposited variant of an oxide single-crystalline Fe thin film were compared. Thermal oxides formed Fe 2 O 3 over an inner layer of Fe 3 O 4 while the sputtered oxides were found to have grown Fe 3 O 4 instead of the target stoichiometry of Fe 2 O 3 . Oxide films of both types were stable in pH=9.3 borate buffer solution, however, were altered in pH=9.3, 0.1 M NaCl solution in the case of thermally pre-oxidized Fe thin film. The stability of the oxide differed in pH=4, 0.1 M NaCl where sputtered Fe films were more stable against acidic chemical dissolution than the thermally formed Fe oxide film. These differences were traced by AC/DC electrochemical analysis including electronic defect densities, and molecular identity characterized by ex-situ X-ray photoelectron spectroscopy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Sputter deposition of high electrical resistivity Au-Ta alloy coatings on rotating substrates

Sputter deposition of gold-tantalum alloy coatings is a key process for manufacturing hohlraums for magnetically-assisted inertial confinement fusion implosions. In this report we describe direct current magnetron sputter deposition of ~ 10 - μ~ 10 - μm-thick films of Au-80 at.% Ta onto rotating sphero-cylindrical hohlraum and planar Si witness substrates. Emphasis is given to how film microstructure and properties are affected by main deposition parameters, including argon working gas pressure, substrate bias, and the source composition (a single alloyed target compared to co-sputtering from two elemental targets). Experimental findings are correlated with distributions of landing energies and incident angles of depositing species calculated by Monte Carlo simulations of ballistic collisions and gas phase atomic transport. Deposition conditions characterized by low energetics of depositing species favor the formation of a β-Ta-like phase. Implications of these results to hohlraum fabrication are discussed.

36 MATERIALS SCIENCE↗

Fabrication of superconducting Nb 3 Sn film by Co-sputtering

High-efficiency SRF cavities are the key technology to construct cost-effective CW SRF accelerators. Improvements in the efficiency of SRF cavities are realized by using novel materials, such as niobium-tin. Advances in niobium-tin coatings on the inner surface of SRF cavities showed the potential for this material to increase the operating temperature of the SRF cavity to above 4 K, leading to significant reduction of the capital and operating cost of SRF accelerators. Among the techniques used to apply the niobium-tin coating to the surface of the SRF cavity is sputtering. Old Dominion University, Jefferson Lab, and Fermilab are collaborating on developing an optimized niobium-tin coating of the inside surface of niobium SRF cavities using a recently-developed cylindrical sputtering system. This research will result in optimized sputtering coating techniques leading to high efficiency SRF structures.

42 ENGINEERING↗

All-Sputtered, Superior Power Density Thin-Film Solid Oxide Fuel Cells with a Novel Nanofibrous Ceramic Cathode

Thin film solid oxide fuel cells (TF-SOFCs) are attracting attention due to their ability to operate at comparatively lower temperatures (400–650 °C) that are unattainable for conventional anode-supported SOFCs (650–800 °C). However, limited cathode performance and cell scalability remain persistent issues. Here, we report a new approach of fabricating yttria-stabilized zirconia (YSZ)-based TF-SOFCs via a scalable magnetron sputtering process. Notable is the development and deposition of a porous La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 2.95 (LSCF)-based cathode with a unique fibrous nanostructure. This all-sputtered cell shows an open-circuit voltage of ~1.0 V and peak power densities of ~1.7 and ~2.5 W/cm 2 at 600 and 650 °C, respectively, under hydrogen fuel and air along with showing stable performance in short-term testing. The power densities obtained in this work are the highest among YSZ-based SOFCs at these low temperatures, which demonstrate the feasibility of fabricating exceptionally high-performance TF-SOFC cells with distinctive dense or porous nanostructures for each layer, as desired, by a sputtering process. This work illustrates a new, potentially low-cost, and scalable platform for the fabrication of next-generation TF-SOFCs with excellent power output and stability.

25 ENERGY STORAGE↗

Nano-Ceramic Cathodes via Co-sputtering of Gd–Ce Alloy and Lanthanum Strontium Cobaltite for Low-Temperature Thin-Film Solid Oxide Fuel Cells

We report the electrochemical performance and structural characteristics of porous nanostructured ceramic cathodes for thin-film solid oxide fuel cells (TF-SOFCs) based on yttria-stabilized zirconia (YSZ) electrolytes. The nanostructured cathode is obtained through magnetron co-sputtering of gadolinium–cerium (Gd–Ce) alloy and lanthanum strontium cobaltite perovskite targets. The resultant nanostructure and composition of the ceramic cathode are controlled by adjusting the co-sputtering conditions. The peak power densities in our fabricated TF-SOFCs are the highest reported values for YSZ-based electrolyte SOFCs, showing 0.14, 0.48, 1.21, 2.56, and 3.01 W/cm2 at 450, 500, 550, 600, and 650 °C, respectively, operating under air and pure hydrogen fuel. The results show that the porosity and composition of the cathode greatly affect the resulting peak power densities. This work illustrates the capability of sputtering to produce stable, scalable, nano-ceramic cathodes with superb peak power densities when integrated in TF-SOFCs.

25 ENERGY STORAGE↗

Sputter-Coated TiO 2 Films as Passivation and Hole Transfer Layers for Improved Energy Conversion with Solar Fuel WO 3 /CuWO 4 Photoanodes

Atomic layer deposited (ALD) “leaky” TiO 2 have gained interest as charge-selective protection layers for semiconductor solar fuel electrodes. Here we demonstrate the use of sputter-deposited TiO 2 layers as hole selective contacts for WO 3 /CuWO 4 type 2 heterojunction water oxidation photoanodes for the first time. TiO 2 protection layers with varying thicknesses (2 to 128 nm) were deposited using the RF magnetron sputtering technique. The resulting TiO 2 films are amorphous based on Raman spectroscopy and powder XRD. Photoelectrochemical scans and Vibrating Kelvin probe photovoltage spectroscopy show that 2-8 nm TiO 2 layers nearly double the photocurrent to 0.97 mA cm -2 under AM 1.5 illumination (19% AQE at 350 nm), increase the surface photovoltage signal by 25%, and increase the WO 3 /CuWO 4 bandgap. These effects can be attributed to the selectivity of TiO 2 for photoholes. Additionally, SPV data suggest that TiO 2 overlayers suppress copper-based surface recombination defects. Reduced photocurrent and the photovoltage are seen in thicker TiO 2 films (16 to 128 nm) as a result of an increasing hole transfer resistance and because of light shading effects according to photoaction spectra. The TiO 2 films also improve the stability of the WO 3 /CuWO 4 photoelectrodes, allowing nearly constant O 2 evolution over 3 hours after an initial 20-35% loss. Overall, this work establishes RF magnetron sputtering as a useful method to install amorphous TiO 2 passivation layers for improved WO 3 /CuWO 4 solar fuel photoelectrodes. Furthermore, we show how the combination of PEC with SPV measurements provides insight into the function of the TiO 2 coatings.

CuWO4↗

Sputtered ferroelectric aluminum scandium boron nitride (Al 1−x−y B x Sc y N)/ n -GaN heterostructures

This work demonstrates ferroelectric switching in magnetron sputtered Al 1−x−y B x Sc y N/ n -GaN heterostructures. Using high power impulse magnetron sputtering, a silicon doped n -GaN bottom electrode with an electron concentration of 6.0 × 10 19 cm −3 is grown on c-plane sapphire. Al 1−x−y B x Sc y N films are prepared on the GaN surface with Al:B:Sc ratios that produce tensile, lattice matched, or compressive epitaxial strains. X-ray diffraction shows that lattice matched and compressively strained Al 1−x−y B x Sc y N compositions are pseudomorphic, while partial relaxation is observed for tensilely strained Al 1−x−y B x Sc y N/ n -GaN heterostructures. Electrically, the Al 1−x−y B x Sc y N/ n -GaN stacks show robust hysteresis; the P–E loops are fully saturated with both lattice matched and compressively strained Al 1−x−y B x Sc y N compositions exhibiting remanent polarization values of 135 μC/cm 2 . For comparison, Al 1−x−y B x Sc y N films are also prepared on metal organic chemical vapor deposition and single crystal GaN substrates to extend strain and morphology trends to more common substrate types. This report validates that sputter deposition is a feasible technique for fabricating strain-tunable ferroelectric III–N heterostructures with high crystalline fidelity and smooth surface morphologies.

42 ENGINEERING↗

Combinatorial sputter deposition of ultrathick Au-Bi alloy films

We report gold-bismuth alloys are of interest as catalysts and catalytic sensing systems, electrochemical sensors, superconductors, and hohlraums for magnetically assisted inertial confinement fusion implosions. Radiation-hydrodynamics simulations with the Lasnex code of laser-driven hohlraums predict higher x-ray drive from Au-Bi alloys compared with cases of Au-Ta or pure Au and Bi hohlraums. Here, we use direct current magnetron sputtering in Ar gas, with co-sputtering from two elemental targets, to deposit Au-Bi alloys with Bi content of 9–77 at.% and thicknesses up to ~20 µm. Films are characterized by a combination of x-ray diffraction, Rutherford backscattering, scanning electron microscopy, substrate-curvature-based residual stress, and electronic transport measurements. Experiments are complemented by Monte Carlo simulations of ballistic sputtering and gas phase transport of depositing species and Ar gas atoms. Results show that all films are polycrystalline, with three distinct compositional regimes dominated by Au, Au 2 Bi, and Bi crystallographic phases. A metallic behavior of the temperature dependence of electrical resistivity is observed for all the films. Films with Bi content above ~30 at.% exhibit porosity, which is tolerable to hohlraum x-ray drive based on Lasnex simulations.

36 MATERIALS SCIENCE↗

Optimized oxygen deprived low temperature sputtered WO3 thin films for crystalline structures

In this work, we report a detailed analysis on the effects of processing parameters for sputtered tungsten trioxide (WO 3 ) thin nanoscale films on their structural, vibrational and electrical properties. The research aims to understand the fundamental aspects of WO3 sputtering at relatively low temperatures and in an oxygen deprived environment targeting applications of temperature and oxygen sensitive substrates. Structural analysis indicates that films deposited at room temperature, or substrate temperatures at or below 400 degrees C with low oxygen partial pressure are amorphous. Furthermore, crystallization of the films was observed with distinct Raman peaks when the films were annealed at 300 degrees C or above using rapid thermal annealing for 10 min. Films revealed monoclinic phases of WO 3 with the presence of W-O-W stretching, bending and lattice vibrational modes in the Raman spectra. Interestingly, a change of transport behavior from insulating to semiconducting was observed for as deposited films on post annealing. Annealed films revealed stoichiometric WO 3 phases with no external defects detected. The present study adopts a route to intercalate WO 3 in a variety of applications from electrochromic coloration to a nanocrystalline thin film for electronic devices sensitive to higher temperatures and gas flow in the sputtering system.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Large anisotropic magnetocaloric effect in all-sputtered epitaxial terbium thin films

We present an experimental investigation of the magnetic and magnetocaloric properties of sputtered epitaxial and amorphous Tb thin films. We grew epitaxial Nb (50-nm)/Tb (100-nm) bilayer thin films on Al 2 O 3 $(11\bar{2}0)$ substrate using DC magnetron sputtering at high temperature, with excellent crystalline quality of the hcp Tb(0001) layer. While the amorphous Tb thin film exhibits more isotropic magnetocaloric properties, we show that the epitaxial Tb thin film displays large anisotropic magnetocaloric properties, with a large maximum magnetic entropy change of 6.27 J kg -1 K -1 at the Néel temperature as well as a large relative cooling power of 225 J kg -1 with a magnetic field change ΔH = 20 kOe applied along the in-plane direction. These large and anisotropic magnetocaloric properties are much larger than those measured for the amorphous Tb thin film, or previously reported for Tb-based thin-film structures. Our findings highlight the opportunities for growing epitaxial rare-earth thin films using sputtering techniques and demonstrate the importance of crystallographic control on the magnetocaloric effect in Tb thin films.

36 MATERIALS SCIENCE↗