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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Development of the sputtering yields of ArF photoresist after the onset of argon ion bombardment

Modification of an advanced ArF excimer lithographic photoresist by 400 eV Ar ion irradiation was observed in situ in real time using both infrared spectroscopy and a quartz microbalance sensor. The photoresist sputtering yields had a characteristic behavior; the sputtering yields were higher than unity at the beginning, until an ion dose of 2 Multiplication-Sign 10{sup 16} ions cm{sup -2}. Thereafter, the yields decreased immediately to almost zero and remained constant with the yield at zero until a dose of approximately 4 Multiplication-Sign 10{sup 16} ions cm{sup -2} was reached. At larger doses, the yields increased again and reached a steady-state value of approximately 0.6. This development of the sputtering yield after the onset of ion bombardment is explained by an ion-induced modification of the photoresist that includes preferential sputtering of individual groups, argon ion implantation and the generation of voids. All these effects must be taken into account to assess line-edge-roughness on a photoresist subjected to highly energetic ion irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Measurement of sputtered beryllium yield and angular distribution during nanostructure growth in a helium plasma

Here, the angular distribution and sputtering yield of beryllium exposed to helium plasma are estimated from analysis of line-integrated 2D imaging of Be-I line emission in a steady-state linear plasma device. As the surface nanostructure forms during plasma exposure on a ~100 s timescale (corresponding to a fluence of order 10 20 /cm 2 ) from nearly mono-energetic ion bombardment, a narrowing of the beryllium sputtering angle and a significant (~5×) drop in sputtering yield are observed. Lastly, these trends are found to be qualitatively consistent with modeling taking into account the effect of the surface morphology on sputtering yield and angular distribution.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Impact of ELM control techniques on tungsten sputtering in the DIII-D divertor and extrapolations to ITER

The free-streaming plus recycling model (FSRM) has recently been developed to understand and predict tungsten gross erosion rates from the divertor during edge localized modes (ELMs). In this work, the FSRM was tested against the experimental measurements of W sputtering during ELMs, conducted via fast neutral tungsten (WI) spectroscopy. Good agreement is observed using a variety of controlling techniques, including gas puffing, neutral beam heating, and plasma shaping to modify the pedestal stability boundary and, thus, the ELM behavior. ELM mitigation by pellet pacing was observed to strongly reduce W sputtering by flushing C impurities from the pedestal and reducing the divertor target electron temperature. No reduction of W sputtering was observed during the application of resonant magnetic perturbations (RMPs), in contrast to the prediction of the FSRM. Potential sources of this discrepancy are discussed. Lastly, the framework of the FSRM is utilized to predict intra-ELM W sputtering rates in ITER. It is concluded that W erosion during ELMs in ITER will be caused mainly by free-streaming fuel ions, but free-streaming seeded impurities (N or Ne) may increase the erosion rate significantly if present in the pedestal at even the 1% level. Impurity recycling is not expected to cause critical W erosion in ITER due to the very low target electron temperature.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Film Growth Dynamics During Pulsed Sputter Deposition (LDRD Final Report)

Novel materials synthesis and development using physical vapor deposition require our fundamental understanding of plasma conditions and film growth dynamics. A central theme is to control materials microstructure. Over the last few decades, the difficulty of thick heavy metal coatings has been one of the major bottlenecks limiting our studies of the important family of inertial-confinement-fusion (ICF) designs with colliding-shell targets. Our previous attempts to fabricate such coatings by conventional DC magnetron sputtering (DCMS) has had limited success due to the inherent complexity and our limited understanding of the deposition process. In this project, we have investigated the physics of a novel and promising pulsed sputter deposition process. We expanded the scientific foundation of sputter deposition processes through a combination of well-posed experiments and state-of-the-art characterizations. The following important scientific milestones have been achieved: (1) Successfully installed and tested a high-power impulse magnetron sputtering (HiPIMS) system; (2) Deployed a novel set of in-situ diagnostics during pulsed deposition, including a multibeam optical stress sensor (MOSS) system for real-time stress measurement, and Langmuir probe for the measurements of plasma physical properties. This allows us to monitor dynamically plasma conditions, ion flux and energy distributions, and film stress; (3) Investigated and obtained a fundamental understanding of HIPIMS on microstructure and stress control; (4) Successfully synthesized and demonstrated record-breaking strength nanocrystalline-nanotwinned (nnt) metals; (5) Successfully obtained high-quality, leak-proof Cr metal shells via HiPIMS method. The outcomes of this project could have transformational scientific and programmatic impacts, enabling novel materials synthesis and an experimental campaign with colliding shell target designs. The basic understanding of the deposition process has important implications to a broad range of industrial applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Analysis of a tungsten sputtering experiment in DIII-D and code/data validation of high redeposition/reduced erosion

We analyze a DIII-D tokamak experiment where two tungsten spots on the removable DiMES divertor probe were exposed to 12 s of attached plasma conditions, with moderate strike point temperature and density (~20 eV, ~4.5 × 10 19 m –3 ), and 3% carbon impurity content. Both very small (1 mm diameter) and small (1 cm diameter) deposited samples were used for assessing gross and net tungsten sputtering erosion. The analysis uses a 3-D erosion/redeposition code package (REDEP/WBC), with input from a diagnostic-calibrated near-surface plasma code (OEDGE), and with focus on charge state resolved impinging carbon ion flux and energy. The tungsten surfaces are primarily sputtered by the carbon, in charge states +1 to +4. We predict high redeposition (~75%) of sputtered tungsten on the 1 cm spot—with consequent reduced net erosion—and this agrees well with post-exposure DiMES probe RBS analysis data. As a result, this study and recent related work is encouraging for erosion lifetime and non-contamination performance of tokamak reactor high-Z plasma facing components.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Deposition of ultrathick heavy-metal alloys on rotating substrates by high-power impulse magnetron sputtering: Target erosion effects

Sputter deposition of ultrathick (≈20μm) Au–Ta alloy coatings on sphero-cylindrical substrates is key for the fabrication of hohlraums for magnetically assisted inertial confinement fusion. In this work, we study the deposition of AuTa 4 alloy coatings onto rotating substrates. We use high-power impulse magnetron sputtering (HiPIMS) in a constant peak target voltage mode. Results show that the target erosion state has a strong impact on the dominant crystallographic phase, microstructure, surface morphology, and electrical resistivity of AuTa 4 films. This is due to effects of changes in the confining magnetic field with target erosion on the HiPIMS discharge characteristics and the sputter source output. We quantify these effects via plasma diagnostics and discuss the optimization of HiPIMS deposition of ultrathick films for cases when target erosion effects dominate film properties.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Grid-Assisted Direct-Current Magnetron Sputtering of Titanium: Plasma Discharge Diagnostics

Grid-assisted magnetron sputtering is attractive for the deposition of ultrathick Be coatings in inertial confinement fusion (ICF) applications because it offers improved control over the plasma. Here, we investigate the plasma discharge characteristics of grid-assisted direct current magnetron sputtering with Ti as a surrogate sputter target material instead of Be. We map the magnetic field of our magnetron source assembly, study the current-voltage characteristics of both the source and the substrate, and measure the energy distributions of ions bombarding the film surface during growth. The results reveal a slightly asymmetric magnetic field of the magnetron source array and strong dependencies of the plasma discharge characteristics on both the grid and the substrate voltages. Positive grid voltage increases both target and substrate currents, increases the plasma potential, and broadens the energy distributions of ions bombarding the substrate. Grid biasing effects on the plasma discharge characteristics and substrate current can be attributed to corresponding changes to the plasma potential, while substrate biasing effects are more complex and nonlinear. Furthermore, these results demonstrate that grid-assisted deposition offers additional flexibility in controlling the deposition process for tuning properties of ultrathick films for ICF applications.

ICF targets↗
DOE OSTI2017

Optimization of vertical and lateral distances between target and substrate in deposition process of CuGaSe 2 thin films using one-step sputtering

Here, copper gallium selenide (CGS) thin films were fabricated using a combinatorial one-step sputtering process without an additional selenization process. The sample libraries as a function of vertical and lateral distance from the sputtering target were synthesized on a single soda-lime glass substrate at the substrate temperature of 500 °C employing a stoichiometric CGS single target. As we increased the vertical distance between the target and substrate, the CGS thin films had more stable and uniform characteristics in structural and chemical properties. Under the optimized conditions of the vertical distance (150 mm), the CGS thin films showed densely packed grains and large grain sizes up to 1 μm in scale with decreasing lateral distances. The composition ratio of Ga/[Cu+Ga] and Se/[Cu+Ga] showed 0.50 and 0.93, respectively, in nearly the same composition as the sputtering target. X-ray diffraction and Raman spectroscopy revealed that the CGS thin films had a pure chalcopyrite phase without any secondary phases such as Cu–Se or ordered vacancy compounds, respectively. In addition, we found that the optical bandgap energies of the CGS thin films are shifted from 1.650 to 1.664 eV with decreasing lateral distance, showing a near-stoichiometric region with chalcopyrite characteristics.

14 SOLAR ENERGY↗
DOE OSTI2019

Easy Controlled Properties of Quaternary FeNiCrCd Thin Films Deposited from a Single dc Magnetron Sputtering Under the Influence of Deposition Rate

The quaternary FeNiCrCd thin films were produced from a single FeNiCrCr source on a commercial flexible polymer substrate using one dc magnetron sputtering technique. For that, a series of the films with a thickness of 50 nm were produced at different deposition rates of 0.02, 0.04, 0.06, and 0.08 nm/s, separately. In this study, as far as concerned, this was the first time that structural and magnetic properties of FeNiCrCd thin films were investigated. According to compositional analysis, the Fe and Cr contents slightly decreased with increasing deposition rate while Ni was almost constant, whereas those of the amount of Cd atoms increased. However, the atomic amounts of Fe and Cd in the films are quite different from those of the source material. The change of the atomic contents in the films from the source may be attributed to the relatively different bond energy/melting point of metals which have different contents sputtered from source material since this physical parameter is very significant for the sputtering process. For crystal structural analysis, a combination of hexagonal close-packed (hcp) and body-centered cubic (bcc) were observed. The peak intensity of the bcc-dominated planes decreased while the hcp-dominant plane increased since the change in peak intensities is compatible with the compositional analysis with increasing deposition rate. And, the grain sizes decreased gradually from 40.1 to 23.4 nm, with increasing deposition rate from 0.02, to 0.08 nm/s. Also, the film surfaces transformed from a rough to smooth surfaces with decreasing grain sizes as deposition rate increased. For magnetic analysis, the saturation magnetization M{sub s} values decreased as 1030, 773, 730, and 217 emu/cm{sup 3} with increasing deposition rate as 0.02, 0.04, 0.06, and 0.08 nm/s, respectively. In the same manner, the coercivity H{sub c} values were found as 11, 7, 6, and 2 Oe with the deposition rate of 0.02, 0.04, 0.06, and 0.08 nm/s, respectively. The decrease of the H{sub c} may have primarily come from the transformation of rough to smooth surface of the films. It may also be said that the films showed soft magnetic properties due to their low H{sub c} values with increasing deposition rate. Thus, the magnetic properties of the quaternary FeNiCrCd alloy films were seen to be easily improved with the deposition rate parameter for potential use in different industrial applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Validating mass spectrometry measurements of nuclear materials via a non-contact volume analysis method of ion sputter craters

A combination of secondary ion mass spectrometry, optical profilometry and a statistically-driven algorithm was used to develop a non-contact volume analysis method to validate the useful yields of nuclear materials. The volume analysis methodology was applied to ion sputter craters created in silicon and uranium substrates sputtered by 18.5 keV O- and 6.0 keV Ar+ ions. Sputter yield measurements were determined from the volume calculations and were shown to be comparable to Monte Carlo calculations and previously reported experimental observations. Additionally, the volume calculations were used to determine the useful yields of Si+, SiO+ and SiO2+ ions from the silicon substrate and U+, UO+ and UO2+ ions from the uranium substrate under 18.5 keV O- and 6.0 keV Ar+ ion bombardment. This work represents the first steps toward validating the interlaboratory and cross-platform performance of mass spectrometry for the analysis of nuclear materials.

Secondary ion mass spectrometry, Sputter yield, Us↗
DOE OSTI2018

Protective Properties of Aluminum Nitride Coatings by DC-PVD Sputtering on Cu-10Al-13Mn Shape Memory Alloy

The AlN coating was applied on the surface of a Cu-10Al-13Mn alloy using the DC-PVD sputtering method. The substrate was set at three different temperatures which were ambient, 100 and 200 °C. The effect of the substrate temperature on the quality of AlN coating was modeled by simulating stress on the coating and substrate. The preparation, microstructure, and corrosion resistance of the coating were studied. The surface morphology and element distribution of the coating were investigated by scanning electron microscopy (SEM) and energy distribution spectroscopy (EDS), respectively. In addition, the corrosion resistance of coating was measured using electrochemical impedance spectroscopy (EIS) method in 1 M NaCl solution. The results showed that the AlN coating was formed on the Cu-10Al-13Mn alloy by DC-PVD sputtering method and the AlN coating considerably improved the corrosion resistance of Cu-10Al-13Mn alloy in the given corrosive media. According to EIS test, polarization resistance increased from approximately 1.6 to 115 KΩ, at 200 °C for uncoated and coated samples, respectively. Thus, corrosion resistance of AlN coating improved with the increase in the substrate temperature during the DC-PVD sputtering process.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Mechanical and Frictional Performance of Ta and Ta-Ag Alloy Films Deposited at Different Sputtering Powers

The mechanical and tribological properties of tantalum and its alloy films are greatly influenced by their phase transformation. In this study, Ta and Ta-Ag films were prepared on carbon steel substrate by DC magnetron sputtering with various sputtering powers. The amorphous and nanocrystalline Ta and Ta-Ag film were produced at different sputtering powers from 40 to 110 W. The frictional properties of Ta and Ta-Ag films were investigated by rubbing against Si{sub 3}N{sub 4} ball from RT to 700 °C. The nanocrystalline Ta-Ag films shows higher hardness values (12 GPa) compared with amorphous phase. The nanocrystalline Ta90-Ag8 film shows a low friction coefficient of about 0.20-0.30 when rubbing against Si{sub 3}N{sub 4} ball at 700 °C. The segregation of Ag can effectively reduce friction coefficients of Ta-Ag film at 700 °C. The Ta-Ag films show high structure stability even after friction at 700 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Glass formation during combinatorial sputtering in binary alloys

Glass formation is a complex phenomenon influenced by thermodynamic and kinetic aspects, which are often controlled by extrinsic contributions. While bulk metallic glasses are typically multicomponent alloys, binary alloys offer a simplified approach to studying glass formation. In this study, we fabricated 57 binary alloy systems through combinatorial sputtering, where each alloy system is represented in 66 different alloys. We developed an automated analysis to determine structure and composition using X-ray diffraction and energy-dispersive X-ray spectroscopy for over 3700 alloys. We found that ∼17 % of the alloys form glasses under the estimated cooling rate during sputtering of ∼10 8 K/s. Data analysis revealed that commonly used factors like atomic size ratio and heat of mixing are ineffective in predicting glass formation. However, the crystal structure mismatch of the alloys’ elements emerged as the strongest indicator of glass formation under sputtering conditions of binary alloys. Here, the differences in glass formation under slow cooling rates used for bulk glass formation and the here observed glass formation under rapid cooling rates are discussed.

Binary alloys↗
DOE OSTI2021

Electrochemical stability, physical, and electronic properties of thermally pre-formed oxide compared to artificially sputtered oxide on Fe thin films in aqueous chloride

Here the electrochemical stability and corrosion behavior of the thermally pre-oxidized and sputter deposited variant of an oxide single-crystalline Fe thin film were compared. Thermal oxides formed Fe 2 O 3 over an inner layer of Fe 3 O 4 while the sputtered oxides were found to have grown Fe 3 O 4 instead of the target stoichiometry of Fe 2 O 3 . Oxide films of both types were stable in pH=9.3 borate buffer solution, however, were altered in pH=9.3, 0.1 M NaCl solution in the case of thermally pre-oxidized Fe thin film. The stability of the oxide differed in pH=4, 0.1 M NaCl where sputtered Fe films were more stable against acidic chemical dissolution than the thermally formed Fe oxide film. These differences were traced by AC/DC electrochemical analysis including electronic defect densities, and molecular identity characterized by ex-situ X-ray photoelectron spectroscopy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Sputter-deposited WO x and MoO x for hole selective contacts

Here, reactive sputter deposited tungsten and molybdenum oxide (WO x , MoO x ) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films deposited by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WO x and MoO x towards higher work functions to improve the hole selectivity.

14 SOLAR ENERGY↗
DOE OSTI2017

Preparation and characterization of RF magnetron sputtered CuO/CaTi{sub 4}O{sub 9} thin films with enhanced third-order nonlinear optical properties

The titanate, is a material of interest for various energy applications, including photovoltaics, catalysts, and high-rate energy storage devices. Herein, its related materials, CuO/CaTi{sub 4}O{sub 9} [CCTO] thin films, were successfully fabricated on SrTiO{sub 3} (100) substrates by RF magnetron sputtering assisted with subsequent oxygen annealing. This obtained CCTO thin films were then systemically studied by X-ray powder diffraction (XRD), atomic force microscopy (AFM), scan electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). It was found that CuO and CaTi{sub 4}O{sub 9} (001) particles were closely accumulated together on the surface of the substrate in the annealing process after comparing with that of the as-prepared thin film, which was verified by SEM and AFM results. Furthermore, we investigated the third-order nonlinear optical (NLO) properties of the as-prepared and annealed CCTO thin film by means of the Z-scan technique using 650 nm femtosecond laser pulse. Post-deposition oxygen annealing was found to modify the morphological characteristics of the films, resulting in enhancing their NLO properties. The observation of NLO performance of annealed CCTO thin film indicates that RF magnetron sputtering is a feasible method for the fabrication of optical thin films, which can be expanded to fabricate other NLO materials from the corresponding dispersions. Naturally, we concluded that the CCTO thin film occupy a better NLO property, and thus enlarge its application in nonlinear optics. - Highlights: • The CCTO thin film was prepared using the RF magnetron sputtering and oxygen annealing. • The film was prepared on the SrTiO{sub 3}(100) substrates with a Ca{sub 2}CuO{sub 3} target. • The oxygen annealing was found can effectively enhance the film quality and NLO property. • The film was characterized using XPS, SEM, AFM, TEM, XRD and Z-scan techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electrochemical and microstructural characterization of magnetron-sputtered ATO thin films as Li–ion storage materials

Highlights: • Nano-structured ATO thin films prepared by RF magnetron sputtering at 25 °C, 100 °C and 200 °C, respectively. • ATO thin films show a high reversible capacity and high rate performance. • Electrochemical reaction mechanism of the ATO thin film was revealed by transmission electron microscopy. - Abstract: Sb-doped SnO{sub 2} (ATO) nanostructured thin films were prepared by using radio frequency magnetron sputtering at the substrate temperatures of 25 °C, 100 °C and 200 °C, respectively. All the ATO thin films have the similar redox characteristics in the cyclic voltammetry measurements. The ATO thin film sputtered at 200 °C shows the lowest charge transfer resistance and best electrochemical performance, and has a high reversible capacity of 679 mA h g{sup −1} at 100 mA g{sup −1} after 200 charge–discharge cycles and high rate performance of 483 mA h g{sup −1} at 800 mA g{sup −1}. The electrochemical mechanisms were investigated by analyzing the phase evolution of the ATO electrodes that had been electrochemically induced at various stages. The results reveal that the ATO underwent reversible lithiation/delithiation processes during the electrochemical cycles, i.e., the SnO{sub 2} reacted with Li{sup +} to produce metallic Sn and followed by the formation of the Li{sub x}Sn alloys during discharge process, and then Li{sub x}Sn alloys de-alloyed, Sn reacted with Li{sub 2}O, and even partially formed SnO{sub 2} during charge process.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Optical and structural properties of sputtered CdS films for thin film solar cell applications

Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T{sub g}, the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity, surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C.

36 MATERIALS SCIENCE↗