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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9

Communications Transceivers for Venus Surface Missions

The high temperature of the surface of Venus poses many difficulties. Previous Venus landers have only operated for short durations before succumbing to the heat. NASA Glenn Research Center conducted a study on communications for long duration Venus surface missions. I report the findings in this presentation. Current technology allows production of communications transceivers that can operate on the surface of Venus, at temperatures above 450 C and pressures of over 90 atmospheres. While these transceivers would have to be relatively simple, without much of the advanced signal processing often used in modern transceivers, since current and near future integrated circuits cannot operate at such high temperatures, the transceivers will be able to meet the requirements of proposed Venus Surface mission. The communication bands of interest are High Frequency or Very High Frequency (HFNHF) for communication between Venus surface and airborne probes (including surface to surface and air to air), and Ultra High Frequency (UHF) to Microwave bands for communication to orbiters. For HFNHF, transceivers could use existing vacuum tube technology. The packaging of the vacuum tubes may need modification, but the internal operating structure already operates at high temperatures. Using metal vacuum structures instead of glass, allows operation at high pressure. Wide bandgap transistors and diodes may be able to replace some of the thermionic components. VHF communications would be useful for line-of- sight operations, while HF would be useful for short-wave type communications using the Venusian ionosphere. UHF and microwave communications use magnetically focused thermionic devices, such as traveling wave tubes (TWTs), magnetron (M-type) amplifiers, and klystrons for high power amplifiers, and backward wave oscillators (BWOs) and reflex klystrons for oscillators. Permanent magnets are already in use in industry that can operate at 500 C. These magnets could focus electron beam tubes on the surface of Venus. While microwave windows will need to be designed for the high pressure, diamond windows have already been demonstrated, so high-pressure microwave windows can be designed and built. Thus, all of these devices could be useful for Venus surface missions. Current electronic power conditioners to supply the high voltages used in these microwave devices cannot operate at high temperatures, but earlier electronic power conditioners that used vacuum tubes can be modified to work at high temperature. Evaluating the various devices in this study, the M-type traveling wave tube (where a traveling wave structure is used in a crossed-field device, similar to the Amplitron used on the Apollo missions) stood out for the high power amplifier since it requires a single high voltage, simplifying the power supply design. Since the receiver amplifier is a low power amplifier, the loss of efficiency in linear beam devices without a depressed collector (and thus needing a single high voltage) is not important; a low noise TWT is a possible solution. Before solid-state microwave amplifiers were available, such TWTs were built with a 1-2 dB noise figure. A microwave triode or transistor made from a wide bandgap material may be preferable, if available. Much of the development work needed for Venusian communication devices will need to focus on the packaging of the devices, and their connections, but the technology is available to build transceivers that can operate on the surface of Venus indefinitely.

Force, Dale A.↗

Thermionic converter studies at Thermo Electron

The Thermionic Energy Converter (TEC) development program includes theoretical and experimental surface studies, diode evaluation, enhanced mode converter investigations and system studies, as well as materials fabrication and testing. The primary effort has been concentrated on increasing converter performance via improved electrodes. Diodes with oxide collectors (i.e., tungsten oxide, titanium oxide, zinc oxide and barium oxide) have provided the best performance. Emitters requiring reduced cesium pressure (such as oxygenated tungsten, lanthanum hexaboride, platinum and graphite) are being tested. Converter configurations using particle spacing are under investigation. Experiments with auxiliary electrode thermionic converters are in progress. Both silicon carbide and alloy hot shells (i.e., barriers to isolate the converter from the combustion environment) have been fabricated and tested.

Huffman, F. N.↗

Thermionic Spacecraft Design Study

This report presents the results of a design study of nuclear-electric propelled unmanned spacecraft. The electric power source is in-core thermionic reactors based on either the internally (flashlight) or externally fueled diode concept. The study guidelines and approach are defined. The characteristics of the candidate launch vehicles, thrust subsystem, and communications subsystem are presented. The definition of two spacecraft/powerplant configurations are presented which deliver 240 kWe net to the thruster array. This definition, presented for both the flashlight and externally fueled reactors includes the key items of spacecraft arrangement and a detailed weight breakdown. Power conditioning, heat rejection subsystem, shielding, and spacecraft structure are detailed. The results show about a 30 percent weight advantage for the spacecraft based on the externally fueled reactor. This is primarily due to a 120 vdc power output from the externally fueled reactor, as compared to a 15 vdc power output from the flashlight reactor. Weight reduction by improved technology could further reduce the weight by 5 to 15 percent.

Source record↗

Thermionic energy converter investigations

This paper presents evaluation of a variety of thermionic converter configurations to obtain improved efficiency. A variable-spacing diode using an iridium emitter gave emission properties comparable to platinum, but the power output from a sintered LaB6 collector diode was not consistent with its work function. Reflectivities above 0.5 were measured at thermal energies on oxygenated-cesiated surfaces using a field emission retarding potential gun. Performance of converters with structured electrodes and the characteristics of a pulsed triode were studied as a function of emitter, collector, cesium reservoir, interelectrode spacing, xenon pressure, and pulsing parameters.

Goodale, D. B.↗

Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

Schlecht, E.↗

Thermionic emission current in a single barrier varactor

From I-V measurements on Single Barrier Varactors (SBV) at different temperatures we concluded that thermionic emission across the barrier of the actual device is mainly due to transport through the X band. The same structure was also modeled with a one-dimensional drift-diffusion model, including a 'boundary condition' for thermionic emission across the heterojunction interface. By including thermionic field emission through the top of the triangular barrier of a biased diode and the effect of a non-abrupt interface at the heterojunction, we obtained good agreement between the modeled and measured I-V characteristics.

Hjelmgren, Hans↗

Thermionic reactors

Thermionic reactors for spacecraft auxiliary power and electric propulsion, discussing in-core conversion system and diodes

Grover, G. M.↗

Advanced thermionic energy conversion

Basic analytical and experimental exploration was conducted on several types of advanced thermionic energy converters, and preliminary analysis was performed on systems utilizing advanced converter performance. The Pt--Nb cylindrical diode which exhibited a suppressed arc drop, as described in the preceding report, was reassembled and the existence of the postulated hydrid mode of operation was tentatively confirmed. Initial data obtained on ignited and unignited triode operation in the demountable cesium vapor system essentially confirmed the design principles developed in earlier work, with a few exceptions. Three specific advanced converter concepts were selected as candidates for concentrated basic study and for practical evaluation in fixed-configuration converters. Test vehicles and test stands for these converters and a unique controlled-atmosphere station for converter assembly and processing were designed, and procurement was initiated.

Britt, E. J.↗

DOE/JPL advanced thermionic technology program

Accomplishments in the DOE program include: continuing stable output from the combustion life test of the one-inch diameter hemispherical silicon carbine diode (Converter No. 239) at an emitter temperature of 1730 K for a period of over 4200 hours; construction of four diode module completed; favorable results obtained from TAM combustor-gas turbine system analyses; and obtained a FERP work function of 2.3 eV with the W(100)-O-Zr-C electrode. JPL program accomplishments include: the average minimum barrier index of the last six research diodes built with sublimed molybdenum oxide collectors was 20 eV (WHK).

Source record↗

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.

Electroluminescence↗

Transport of majority and minority carriers in 2-micron-diameter Pt-GaAs Schottky barriers

An experimental study of small area (2-micron diameter) Pt-GaAs Schottky barrier diodes has been made, by using a wafer chip with a matrix of these diodes lying within approximately a minority carrier diffusion length of one another. Using one diode as collector and another as emitter, transistor measurements indicated that the dominant contribution to the current is the majority-carrier thermionic field emission current for large forward-bias voltage of the emitter junction (V-EB no less than about 0.4 V), whereas the smaller forward-bias (V-EB no greater than about 0.4 V) recombination in the space-charge region was most important. The minority carrier injection ratio is measurable only for large forward-bias voltages, decreasing from about 0.02 to 0.00001 as VEB increases from 0.5 to 1.0 V. The minority carrier diffusion length was measured to be about 1.3 microns. These results are of considerable significance for the understanding and optimization of the performance of these devices as classical detectors and mixers.

Chan, E. Y.↗