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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The development of an optical diode consisting of a metal-dielectric-metal junction in which the high-speed electric conduction process occurs due to quantum mechanical electron tunneling across the dielectric barrier is briefly reviewed. Potential applications of the diode are discussed.
Requirements for ohmic contacts to laser diodes are discussed, and properties of Schottky barrier tunneling contacts are reviewed. A procedure is described for measuring contact resistance on fabricated laser material without the need for specially constructed samples and contact configurations. Measurements of contact resistance and estimates of specific contact resistance are given for Ti/Pt/Au contacts to surfaces with three different doping levels. It was found that below a p-type carrier concentration of 1 x 10 to the 19th per cu cm the contact resistance is likely to be too high for good device performance. At higher doping levels, a specific contact resistance as low as 2 x 10 to the -6th ohm sq cm was obtained. Oxide stripe lasers provided with the type of contact discussed in this paper have been operated without failures for periods up to 7 years at a current density at the contact of 6-8 kA/sq cm. It appears therefore that these contacts satisfy the need for low resistance and durability and that, at the same time, they do not cause any obvious material degradation.
A triple-well resonant-tunneling structure made from the In(0.53)Ga(0.47)As/AlAs material system yields a broad negative differential resistance (NDR) region without the precipitous drop in current that occurs in single-well structures. This NDR characteristic is attributed to resonant tunneling through mixed quasi-bound states. A diode made from this structure is used to generate a nearly constant power of 0.5 mW up to 16 GHz.
This paper presents a theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes. The model describes the connection between the leakage current associated with the traps and the trap characteristics: concentration, energy level, and capture cross sections. It is observed that the above two types of diodes differ the voltage dependence of the trap-assisted tunneling current and dynamic resistance. The model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated dc characteristics of the photodiodes supports the validity of the model.
A theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes is presented. The model describes the traps and the trap characteristics: concentration, energy level, and capture cross sections. We have observed that the above two types of diodes differ in the voltage dependence of the trap-assisted tunneling current and dynamic resistance. Our model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated DC characteristics of the photodiodes (for medium and high reverse bias and for temperatures from 65 to 140 K) supports the validity of the model.
Direct detection experiments have demonstrated the coherent coupling of 10.6 micrometer radiation into photolithographically fabricated metal-oxide-metal tunnel junctions. A CO2 laser beam mechanically chopped at 1 KHz was focused at a variable angle of incidence with a power density of about 10 W/sq cm at the diodes. Diodes in which the junction resistance was much greater than the lead resistance displayed angular characteristics dominated by coherent antenna coupling.
Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.
While different methods exist to determine the contact resistivity in semiconductor devices, these methods are limited to measurement of the majority carrier contacts. The measurement of p‐ or n‐type contacts on n‐ or p‐type crystalline silicon, respectively, is challenging due to the blocking diode formed by the p–n junction. In this article, we address this problem for tunneling oxide passivating contacts used in high‐efficiency Si solar cells. We propose a universal method to extract contact resistivity on symmetric test structures with polycrystalline silicon on SiO x (poly‐Si/SiO x ) passivating contacts under illumination, both for p–n and high–low‐junction passivated contacts. In this method, we demonstrate that the total contact resistance of each cell grid finger to the base wafer is governed by its effective contact area, defined by the transfer length extending from both sides of the finger. Therefore, the grid contact resistance of a poly‐Si contact depends on the ratio of the doped poly‐Si sheet resistance to the tunneling contact resistivity.
A new technique has been developed for nonintrusive in situ measurement of oxygen concentration, gas temperature, and flow velocity of the test media in hypersonic wind tunnels. It is based on absorption of near-infrared radiation from inexpensive GaAlAs laser diodes used in optoelectronics industry. It is designed for simultaneous measurements along multiple lines of sight accessed by fiber optics. Molecular oxygen concentration is measured from the magnitude of absorption signals; rotational gas temperature is measured from the intensity ratio of two oxygen absorption lines; and the flow velocity is measured from the Doppler shift of the absorption line positions. This report describes the results of an extensive series of tests of the prototype instrument in laboratory flames emphasizing assessment of the instruments capabilities for quantitative measurement of O2 concentration (mole fraction) and gas temperature.
Optical response to radiation at a wavelength of 10.6 microns in tungsten silicide-silicon Schottky barrier diodes has been observed. Incident photons excite electrons by means of junction plasmon assisted inelastic electron tunneling. At 78 K, a peak in the second derivative of current versus junction bias voltage was observed at a voltage corresponding to the energy of photons having a wavelength of 10.6 microns. This peak increased with increasing incident laser power, saturating at the highest laser powers investigated.
The topics covered include: 1) Replaceable Sensor System for Bioreactor Monitoring; 2) Unitary Shaft-Angle and Shaft-Speed Sensor Assemblies; 3) Arrays of Nano Tunnel Junctions as Infrared Image Sensors; 4) Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors; 5) Compact, Precise Inertial Rotation Sensors for Spacecraft; 6) Universal Controller for Spacecraft Mechanisms; 7) The Flostation - an Immersive Cyberspace System; 8) Algorithm for Aligning an Array of Receiving Radio Antennas; 9) Single-Chip T/R Module for 1.2 GHz; 10) Quantum Entanglement Molecular Absorption Spectrum Simulator; 11) FuzzObserver; 12) Internet Distribution of Spacecraft Telemetry Data; 13) Semi-Automated Identification of Rocks in Images; 14) Pattern-Recognition Algorithm for Locking Laser Frequency; 15) Designing Cure Cycles for Matrix/Fiber Composite Parts; 16) Controlling Herds of Cooperative Robots; 17) Modification of a Limbed Robot to Favor Climbing; 18) Vacuum-Assisted, Constant-Force Exercise Device; 19) Production of Tuber-Inducing Factor; 20) Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron; 21) Tunable Filter Made From Three Coupled WGM Resonators; and 22) Dynamic Pupil Masking for Phasing Telescope Mirror Segments.
Structure made by As implantation of carefully prepared high-conductivity CdS surfaces followed by Pt deposition and 450 C anneal display rectifying, although substantially different, I-V characteristics in the dark and during illumination with subband-gap light. Structures prepared in the same way on an unimplanted portion of the substrate have similar I-V characteristics, except that the forward turnover voltage for an illuminated unimplanted diode is much smaller than that for an implanted diode. It is suggested that the charge conduction in both structures is dominated by hole and/or electron tunneling through a metal-semiconductor potential barrier. The tunneling processes appear to be quite sensitive to subband-gap illumination, which causes the dramatic decreases of turnover voltages and apparent series resistances. The difference in turnover voltage appears to be caused by interface states between the Pt electrode and the implanted layer, which suggests a MIS model.
This paper discusses Spectral Proper Orthogonal Decomposition (SPOD) of the Unsteady Pressure-Sensitive Paint (uPSP) measurements in recent NASA Ames wind tunnel test. The uPSP measurements were collected using Innovative Scientific Solutions, Inc. (ISSI) porous, fast-response pressure-sensitive paint, 40 ISSI four-inch air-cooled Light-Emitting Diodes, and 8 Phantom v2512 high-speed cameras at 10,000 frames per second in the uPSP Launch Vehicle Demonstration Test (LVDT) of the Space Launch System (SLS) vehicle in the 11-by 11-foot transonic test section of the Unitary Plan Wind Tunnel at NASA Ames Research Center in April 2024. SPOD is derived from a space-time proper orthogonal decomposition problem for statistically stationary flows. SPOD modes are determined in the frequency domain. Each SPOD mode oscillates at a single frequency. SPOD can be viewed as an extension of the Discrete Fourier Transform composition and the Dynamic Mode Decomposition. In this paper, the outputs of SPOD of the uPSP measurements in the uPSP LVDT are presented and the effectiveness of SPOD in the identification, diagnosis and analysis of the aerodynamic and aeroacoustic phenomena is demonstrated. The unsteady and dynamic property of the pressure field on the surface of the SLS Block 1B crew vehicle is presented with the visualization of the SPOD modes of the uPSP measurements in the tests of a Mach sweep run of the uPSP LVDT. The SPOD outputs were generated with the execution in parallel of a code in Python, with the library of Message Passing Interface for parallel processing, on the NASA Pleiades supercomputer. The work described in this paper is a part of NASA’s development of a new state-of-the-art uPSP capability in production wind tunnels. Funding was provided by the NASA Aerosciences Evaluation and Test Capabilities Portfolio Office.
Laser velocimeter (LV) designed to use semiconductor-diode laser is 100 times smaller than continuous-wave gas-laser velocimeter permitting mounting within wind-tunnel models or on engine walls. Mini LV uses only 0.4 watts of power and measures velocities with accuracy of 98% or better.
The development and application of tunable diode laser (TDL) absorption sensors to monitor the health and operating conditions in the large-scale 60 MW arc-heated- plasma wind-tunnel at NASA Ames Research Center is reported. The interactive heating facility (THF) produces re-entry flow conditions by expanding the gas heated in a constricted plasma arc-heater to flow at high velocity over a model located in a test cabin. This facility provides the conditions needed to test thermal protective systems for spacecraft re-entering the earth s atmosphere. TDL sensors are developed to monitor gas flows in both the high-temperature constricted flow and the supersonic expansion flow into test cabin. These sensors utilize wavelength-tuned diode lasers to measure absorption transitions of atomic oxygen near 777.2 nm, atomic nitrogen near 856.8 nm, and atomic copper near 793.3 nm. The oxygen and nitrogen sensors measure the population density in exited electronic states of these atoms. The measurements combined with the assumption of local thermal and chemical equilibrium yield gas temperature (typically near 7,000K). The nitrogen and oxygen population temperatures are redundant, and their close agreement provides an important test of the local thermal equilibrium assumption. These temperature sensors provide time-resolved monitors of the operating conditions of the arc-heater and can be used to verify and control the test conditions. An additional TDL sensor was developed to monitor the copper concentration in the arc-heater flow yielding values as high as 13 ppm. Measurements of copper in the flow can identify flow conditions with unacceptably rapid electrode erosion, and hence this sensor provides valuable information needed to schedule maintenance to avoid costly arc-heater failure. TDL sensors were also developed for measurements in the test cabin, where absorption measurements of the populations of argon and molecular nitrogen in excited metastable electronic states established that the number density of these excited species is much lower than estimated using frozen-chemistry approximations. This key finding suggests that in the post-expansion region there is not a significant energy sequestration in electronically excited species. Finally, TDL measurements of atomic potassium seeded into the test cabin flow were used to directly measure the static temperature of the test gas. The results of this study illustrate the high potential of time-resolved TDL measurements for routine and economical sensing of arc-heater health (gas temperature and electrode erosion) as well as the time-resolved test-cabin-flow conditions in front of the model.
Silicon can be heavily doped with phosphorus in a single atomic layer (a δ layer), significantly altering the electronic structure of the conduction bands within the material. Recent progress has also made it possible to further dope silicon with acceptor-based δ layers using either boron or aluminum, making it feasible to create devices with interacting δ layers with opposite polarity. Using density functional theory, we calculate the electronic structure of a phosphorus-based δ layer interacting with a boron or aluminum δ layer, varying the distances between the δ layers. At separations 1 nm and smaller, the dopant potentials overlap and largely cancel each other out, leading to an electronic structure closely mimicking intrinsic silicon. At separations greater than 1 nm, the two δ layers behave independently of one another, with an equivalent electronic structure to a p–n diode with an intrinsic layer taking the place of the depletion region. One mechanism for charge transfer between δ layers at larger distances could be tunneling, where we see a tunneling probability exceeding what would be seen for a standard silicon 1.1 eV triangular barrier, indicating that the interaction between delta layers may enhance tunneling compared to a traditional junction.
This paper discusses Spectral Proper Orthogonal Decomposition (SPOD) of the Unsteady Pressure-Sensitive Paint (uPSP) measurements in recent NASA Ames wind tunnel test. The uPSP measurements were collected using Innovative Scientific Solutions, Inc. (ISSI) Porous, Fast-Response Pressure-Sensitive Paint (FP-XXX), 40 ISSI four-inch air-cooled Light-Emitting Diodes (LEDs), and 8 Phantom v2512 high-speed cameras at 10,000 frames per second in the Launch Vehicle Demo Test (LVDT) of the Space Launch System (SLS) Block 1B crew vehicle in the 11-by 11-foot transonic test section of the Unitary Plan Wind Tunnel (UPWT) at NASA Ames Research Center in April 2024. Fig. 1 shows the scale model of the SLS launch vehicle installed in the wind tunnel during the test.
A three beam water vapor sensor system has been modified to provide for near simultaneous temperature measurement. The system employs a tunable diode laser to scan spectral line of water vapor. The application to measurements in a scramjet combustor environment of a shock tunnel facility is discussed. This report presents and discusses die initial calibration of the measurement system.