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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Growth and Some Properties of Cr(sub 11)Ge(sub 19)

Cr(sub 11)Ge(sub 19) belongs to a large family of materials known as the Nowtny chimney-ladder compounds, some of which were recently proposed as advanced thermoelectric materials because of their low thermal conductivity related to their relatively complex crystal structure. In order to assess the potential of the compound Cr(sub 11)Ge(sub 19) for thermoelectric applications, we grew large single crystals of this peritectic compound by a vertical gradient freeze technique and measured the thermoelectric properties of the crystals.

Nowotny chimney-ladder compounds thermoelectric ma↗
DOE OSTI2025

Interplay of Crystal Structure and Magnetic Properties of the Eu 5.08-x Sr x Al 3 Sb 6 Solid Solution

Zintl phases containing rare-earth metals have gained attention due to their magnetic, electronic, and thermoelectric properties. Eu 5.08 Al 3 Sb 6 is a new structure type (monoclinic space group C2/m) that can be described as a pseudorock-salt EuSb motif with the Eu-centered Sb octahedra at the origin of the unit cell, and on the C-face center, containing either Eu (8%) or an Al 4 tetrahedron modeled as a dual tetrahedron (37.5%). The complete solid solution of Eu 5.08–x Sr x Al 3 Sb 6 can be prepared; however, the cation totals vacillate from 5 to 5.24 depending on the Al content. Al K-edge XANES shows a shift to higher energy relative to the Al metal but at slightly lower energy relative to AlSb, indicating an intermediate oxidation state closer to +3 than 0. The lack of an Al K-edge shift with the incorporation of Sr suggests that changes in Sr content do not have a meaningful impact on the electronics of the Al tetrahedra. Investigation of the solid solution structures provides evidence for classifying this structure type as a polar intermetallic phase with variable composition. Magnetization measurements were collected for the solid solution and show complex magnetic ordering with competing ferromagnetic and antiferromagnetic interactions as the Sr content increases.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2002

Effects of annealing electrodeposited bismuth Telluride films

Thermoelectric thin films exhibit different qualities when compared with bulk materials. The goal however is to achieve thermoelectric properties of bulk materials from electrodeposited thin films. Thin films are produced by electrochemical deposition at room temperature. In order to optimize thermoelectric figure of merit proper carrierconcentration must be obtained.

thermoelectric power generation segmented↗
DOE OSTI2025

Investigation of magnetic and electrical transport properties of YMB 4 (M = Cr, Fe, and Co) compounds

We have studied the structural, magnetic, and electrical transport properties of the YMB 4 series of compounds (M= Cr, Fe, and Co). These materials exhibit high stability and possess notable refractory and thermoelectric properties. Furthermore, recent theoretical predictions suggest that some of these compounds may display quantum magnetism and dimer formation among the magnetic ions. We have synthesized almost single phase YMB 4 compounds in the orthorhombic crystal structure (space group Pbam) using arc-melting and annealing. The Rietveld analysis of the room-temperature X-ray diffraction patterns reveals a clear change in the lattice parameter c, which correlates with the atomic radii of Cr, Fe, and Co. The temperature variation of resistivity measured between 2 K and 300 K reveals a metallic electron transport in all three YMB 4 compounds. However, no abrupt change in resistivity due to structural or magnetic phase transitions is observed. Additionally, a weak positive magnetoresistance of 1%–2% has been measured at 2.5 K, the contribution from the metallic impurity cannot be ruled out. The carrier concentration, on the order of 10 21 cm −3 , has been determined using conventional Hall measurements. The thermomagnetic curves recorded between 2 K and 350 K reveal the non-magnetic behavior of all these compounds. However, a small magnetic moment from paramagnetic/ferromagnetic impurity phases is detected at low temperatures. Above room temperature, no magnetic transition associated with the breaking of a dimer is observed.

borides↗
NASA NTRS1995

Preparation and Some Properties of N-Type IrxCo1-xSB3 Solid Solutions

A number of studies have been recently devoted to the preparation and characterization of binary skutterudite materials to investigate their potential as advanced thermoelectric materials. These studies show that the potential of these binary skutterudite compounds is limited because of their relatively large thermal conductivity. In order to achieve high thermoelectric figure of merits for these materials, efforts should focus on thermal conductivity reduction. Recent results obtained on n-type CoSb3 and IrSb3 compounds have shown that n-type skutterudite materials might have a better potential for thermoelectric applications than p-type materials. The thermoelectric properties of p-type IrxCo1-xSb3 solid solutions have been recently investigated and it was shown that a substantial reduction in thermal conductivity was achieved. We prepared and measured some properties of n-type IrxCo1-xSb3 solid solutions. The samples are characterized by large Seebeck coefficient values and significantly lower thermal conductivity values than those measured on the binary compounds CoSb3 and IrSb3. A maximum ZT value of about 0.4 was obtained at a temperature of about 300(deg)C. Improvements in the figure of merit are possible in this system by optimization of the doping level.

Solid Solutions↗
DOE OSTI2021

Understanding and design of spin-driven thermoelectrics

While progress in thermoelectric materials based on the engineering of electronic and phononic characteristics is reaching a plateau, the addition of the spin degree of freedom has the potential to open a new landscape for alternative thermoelectric materials. Here, we present the concepts, current understanding, and guidelines for designing spin-driven thermoelectrics. We show that the interplay between the spin and heat currents in entropy transport via charge carriers can offer a path to enhance the electronic thermopower. The classical antiferromagnetic semiconductor manganese telluride (MnTe) is chosen as the case study due to its significant spin-mediated thermoelectric properties. We show that, although the spin-disorder scattering reduces the carrier mobility in magnetic materials, spin entropy, magnon, and paramagnon carrier drags can dominate and significantly enhance the thermoelectric power factor, and hence zT. Finally, several guidelines are drawn based on the current understanding for designing high-performance spin-driven thermoelectric materials.

42 ENGINEERING↗
NASA NTRS1998

Promising Thermoelectric Materials for Terrestrial-Space Applications

Since the discovery of state-of-the-art thermoelectric materials in the 1960s, little improvement has been made in the thermoelectric material efficiency. Although numerous materials have been investigated for their thermoelectric properties, ZT value of 1 has not been significantly exceeded. This paper presents a new family of materials with the skutterudite crystal structure which, based on initial results obtained on several compounds of this family, has a good potential for thermoelectric applications. This class of materials covers a wide range of decomposition temperatures and bandgaps, which could be used for low, intermediate to high temperature applications.

thermoelectric material skutterudite↗
NASA NTRS2002

Synthesis and thermoeletric properties of Co(sub (1-x)ni)(sub X)P(sub 3) and CoAs((sub 3-x))P(sub x) skutterudites

Two types of promising phosphide skutterudite materials, Co(1-x)NixP3 (x= 0.025 to 0.70) and CoAs(3-x)Px (x=0.5 to 0.10), have been synthesized and their transport properties measured. These compounds were prepared using a direct synthesis technique. The samples were hot pressed and analyzed by electron microprobe microscopy. Hall Effect measurements were conducted to determine the electrical conductivity, mobility and carrier concentration. In addition, Seebeck voltage and thermal conductivity measurements were performed. The thermoelectric properties are presented anddiscussed as a function of temperature up to 1273 K. The thermal stability of the primary CoP3 was examined in a static vacuum under isothermal and in-gradient conditions. The effect of the presence of 1 atm of a cover gas on the material loss rate was analyzed.

thermoelectric↗
DOE OSTI2025

Modulating the Electronic Transport of 2D Sb2Te3 Nanoplates by Coinage Metal Intercalation

Thermoelectric materials are particularly relevant to the current energy infrastructure and demands of the 21st century, converting waste heat into usable electricity. The solution intercalation of zerovalent copper into Sb2Te3 nanoplates, a well-established thermoelectric material, is reported. The copper intercalant is homogeneously distributed throughout the nanoplates, confirmed by scanning transmission electron microscopy coupled with energy-dispersive X-ray spectroscopy. The copper composition was shown to be 6 at. % by X-ray photoelectron spectroscopy. Copper ordering within the van der Waals gaps of the nanoplates is confirmed by selected area electron diffraction. Fabrication and thermoelectric property measurements of single-crystal Sb2Te3 and Cu-Sb2Te3 nanoplate devices show effective modulation of electrical conductivity and Seebeck coefficient with Cu intercalation. X-ray photoelectron spectroscopic studies in the valence-band region reveal additional electronic states from copper that appear near the Fermi energy, postulated to act as electron acceptors, leading to modulation of the electronic transport properties.

2D nanoplates↗
NASA NTRS2009

Very High Output Thermoelectric Devices Based on ITO Nanocomposites

A material having useful thermoelectric properties was synthesized by combining indium-tin-oxide (ITO) with a NiCoCrAlY alloy/alumina cermet. This material had a very large Seebeck coefficient with electromotive-force-versustemperature behavior that is considered to be excellent with respect to utility in thermocouples and other thermoelectric devices. When deposited in thin-film form, ceramic thermocouples offer advantages over precious-metal (based, variously, on platinum or rhodium) thermocouples that are typically used in gas turbines. Ceramic thermocouples exhibit high melting temperatures, chemical stability at high temperatures, and little or no electromigration. Oxide ceramics also resist oxidation better than metal thermocouples, cost substantially less than precious-metal thermocouples, and, unlike precious-metal thermocouples, do not exert catalytic effects.

Fralick, Gustave↗
DOE OSTI2022

Topological electronic structure of YbMg 2 Bi 2 and CaMg 2 Bi 2

Zintl compounds have been extensively studied for their outstanding thermoelectric properties, but their electronic structure remains largely unexplored. Here, we present a detailed investigation of the electronic structure of the isostructural thermopower materials YbMg 2 Bi 2 and CaMg 2 Bi 2 using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). The ARPES results show a significantly smaller Fermi surface and Fermi velocity in CaMg 2 Bi 2 than in YbMg 2 Bi 2 . Our ARPES results also reveal that in the case of YbMg 2 Bi 2 , Yb- 4 f states reside well below the Fermi level and likely have a negligible impact on transport properties. To properly model the position of 4f-states, as well as the overall electronic structure, a Hubbard U at the Yb sites and spin-orbit coupling (SOC) have to be included in the DFT calculations. The theoretical results reveal that both materials belong to a Z 2 topological class and host topological surface states around EF. Due to the intrinsic hole doping, the topological states reside above the Fermi level, inaccessible by ARPES. Our results also suggest that in addition to SOC, vacancies and the resulting hole doping play an important role in the transport properties of these materials.

36 MATERIALS SCIENCE↗
NASA NTRS2005

High performance p-type thermoelectric materials and methods of preparation

The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4-xAxSb3-yBy wherein 0?x?4, A is a transition metal, B is a pnicogen, and 0?y?3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

Caillat, Thierry↗
DOE OSTI2024

Advancing Heteroanionicity in Zintl Phases: Crystal Structures, Thermoelectric and Magnetic Properties of Two Quaternary Semiconducting Arsenide Oxides, Eu 8 Zn 2 As 6 O and Eu 14 Zn 5 As 12 O

Two novel quaternary oxyarsenides, Eu 8 Zn 2 As 6 O and Eu 14 Zn 5 As 12 O, were synthesized through metal flux reactions, and their crystal structures were established by single-crystal X-ray diffraction methods. Eu 8 Zn 2 As 6 O crystallizes in the orthorhombic space group Pbca, featuring polyanionic ribbons composed of corner-shared triangular [ZnAs 3 ] units, running along the [100] direction. The structure of Eu 14 Zn 5 As 12 O crystallizes in the monoclinic space group P2/m and its anionic substructure can be described as an infinite “ribbonlike” chain comprised of [ZnAs 3 ] trigonal-planar units, although the structural complexity here is greater and also amplified by disorder on multiple crystallographic positions. In both structures, the O 2– anion occupies an octahedral void with six neighboring Eu 2+ cations. Formal electron counting, electronic structure calculations, and transport properties reveal the charge-balanced semiconducting nature of these heteroanionic Zintl phases. High-temperature thermoelectric transport properties measurements on Eu 14 Zn 5 As 12 O reveal relatively high resistivity (ρ 500K = 8 Ω·cm) and Seebeck coefficient values (S 500K = 220 μV K –1 ), along with a low concentration and mobility of holes as the dominant charge-carriers (n 500K = 8.0 × 10 17 cm –3 , μ 500K = 6.4 cm 2 /V s). Magnetic studies indicate the presence of divalent Eu 2+ species in Eu 14 Zn 5 As 12 O and complex magnetic ordering, with two transitions observed at T 1 = 21.6 K and T 2 = 9 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1972

Technical, analytical and computer support

The development of a rigorous mathematical model for the design and performance analysis of cylindrical silicon-germanium thermoelectric generators is reported that consists of two parts, a steady-state (static) and a transient (dynamic) part. The material study task involves the definition and implementation of a material study that aims to experimentally characterize the long term behavior of the thermoelectric properties of silicon-germanium alloys as a function of temperature. Analytical and experimental efforts are aimed at the determination of the sublimation characteristics of silicon germanium alloys and the study of sublimation effects on RTG performance. Studies are also performed on a variety of specific topics on thermoelectric energy conversion.

Source record↗
DOE OSTI2021

Ingredients for enhanced thermoelectric power at cryotemperatures in the correlated semiconductor CoSbS revealed by its optical response

The semiconducting CoSbS is well-known for its thermoelectric performance at high-temperatures but it is also of interest because of its colossal low-temperature thermopower. Here, we address the temperature dependence of its optical response over a broad spectral range, from which we reveal several ingredients determining the thermoelectric properties at cryo-temperatures. Furthermore, we discover co- herent phonon modes and with the additional support of scanning transmission electron microscopy investigations we provide evidences for in-gap impurity states driving the formation of correlated electrons in the valence band. Their implications, with respect to the high thermoelectric power at low temperatures, are discussed within the framework of the phonon-drag transport of low-mobility heavy quasiparticles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2002

High performance P-type thermoelectric materials and methods of preparation

The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein 0.ltoreq.x.ltoreq.4, A is a transition metal, B is a pnicogen, and 0.ltoreq.y.ltoreq.3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn.sub.4 Sb.sub.3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

Caillat, Thierry↗