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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Thermally Significant Fluid Seepage Through Thick Sediment on the Juan de Fuca Plate Entering the Cascadia Subduction Zone

We use heat flux measurements colocated with seismic reflection profiles over a buried basement high on the Juan de Fuca plate ∼25 km seaward of the deformation front offshore Oregon to test for the presence of hydrothermal circulation in the oceanic crust. We also revisit heat flux data crossing a buried basement high ∼25 km seaward of the deformation front ∼150 km north, offshore Washington. Seafloor heat flux is inversely correlated with sediment thickness, consistent with vigorous hydrothermal circulation in the basement aquifer homogenizing temperatures at the top of the basement. Heat flux immediately above the summit of the basement highs is greater than expected solely from conduction. Fluid seepage at rates of ∼2.6–5.4 cm yr −1 in a 1–1.5 km-wide conduit through ∼800–1,300 m thick sediment sections above these basement highs can explain these observations. Observations of thermally significant fluid seepage through sediment >225 m thick on oceanic crust are unprecedented. High sediment permeability, high fluid overpressure in the basement, or a combination of both is required to drive fluid seepage at the observed rates. We infer that rapid seepage occurs because the basement highs rise above the low permeability basal sediment with their tops protruding into the base of high permeability Nitinat or Astoria Fan sediment. Seepage from basement highs penetrating into the submarine fans can affect the thermal state of crust entering the subduction zone.

58 GEOSCIENCES↗
DOE OSTI2023

Unit-cell-thick zeolitic imidazolate framework films for membrane application

Zeolitic imidazolate frameworks (ZIFs) are a subset of metal–organic frameworks with more than 200 characterized crystalline and amorphous networks made of divalent transition metal centres (for example, Zn 2+ and Co 2+ ) linked by imidazolate linkers. ZIF thin films have been intensively pursued, motivated by the desire to prepare membranes for selective gas and liquid separations. To achieve membranes with high throughput, as in ångström-scale biological channels with nanometre-scale path lengths, ZIF films with the minimum possible thickness—down to just one unit cell—are highly desired. However, the state-of-the-art methods yield membranes where ZIF films have thickness exceeding 50 nm. Here we report a crystallization method from ultradilute precursor mixtures, which exploits registry with the underlying crystalline substrate, yielding (within minutes) crystalline ZIF films with thickness down to that of a single structural building unit (2 nm). The film crystallized on graphene has a rigid aperture made of a six-membered zinc imidazolate coordination ring, enabling high-permselective H 2 separation performance. The method reported here will probably accelerate the development of two-dimensional metal–organic framework films for efficient membrane separation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Author Correction: Thickness-dependent magnetic order in CrI3 single crystals

Two-dimensional (2D) materials with intrinsic ferromagnetism provide unique opportunity to engineer new functionalities in nano-spintronics. One such material is CrI3, showing long-range magnetic order in monolayer with the Curie temperature (Tc) of 45 K. Here we study detailed evolution of magnetic transition and magnetic critical properties in response to systematic reduction in crystal thickness down to 50 nm. Bulk Tc of 61 K is gradually suppressed to 57 K, however, the satellite transition at T * = 45 K is observed layer-independent at fixed magnetic field of 1 kOe. The origin of T * is proposed to be a crossover from pinning to depinning of magnetic domain walls. The reduction of thickness facilitates a field-driven metamagnetic transition around 20 kOe with out-of-plane field, in contrast to the continuous changes with in-plane field. The critical analysis around Tc elucidates the mean-field type interactions in microscale-thick CrI3.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Five-second STEM dislocation tomography for 300 nm thick specimen assisted by deep-learning-based noise filtering

Scanning transmission electron microscopy (STEM) is suitable for visualizing the inside of a relatively thick specimen than the conventional transmission electron microscopy, whose resolution is limited by the chromatic aberration of image forming lenses, and thus, the STEM mode has been employed frequently for computed electron tomography based three-dimensional (3D) structural characterization and combined with analytical methods such as annular dark field imaging or spectroscopies. However, the image quality of STEM is severely suffered by noise or artifacts especially when rapid imaging, in the order of millisecond per frame or faster, is pursued. Here we demonstrate a deep-learning-assisted rapid STEM tomography, which visualizes 3D dislocation arrangement only within five-second acquisition of all the tilt-series images even in a 300 nm thick steel specimen. The developed method offers a new platform for various in situ or operando 3D microanalyses in which dealing with relatively thick specimens or covering media like liquid cells are required.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Electrodeposition and analysis of thick bismuth films

Due to its unique physical and chemical properties, bismuth is an attractive candidate for a wide range of applications such as battery anodes, radiation shielding, and semiconductors, to name a few. This work presents the electrodeposition of mechanically stable and homogenous bismuth films at micron-scale thicknesses. A simple one-step electrodeposition process using either a pulse/reverse or direct current source yielded thick, homogenous, and mechanically stable bismuth films. Morphology, electrochemical behavior, adhesion, and mechanical stability of bismuth coatings plated with varying parameters were characterized via optical profilometry, cyclic voltammetry, electron microscopy, and tribology. Scratch testing on thick electroplated coatings (> 100 µm) revealed similar wear resistance properties between the pulse/reverse plated and direct current electroplated films. This study presents a versatile bismuth electroplating process with the possibility to replace lead in radiation shields with an inexpensive, non-toxic metal, or to make industrially relevant electrocatalytic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Effects of film thickness on electrochemical properties of nanoscale polyethylenedioxythiophene (PEDOT) thin films grown by oxidative molecular layer deposition (oMLD)

Poly(3,4-ethylene dioxythiophene) (PEDOT) has a high theoretical charge storage capacity, making it of interest for electrochemical applications including energy storage and water desalination. Nanoscale thin films of PEDOT are particularly attractive for these applications to enable faster charging. Recent work has demonstrated that nanoscale thin films of PEDOT can be formed using sequential gas-phase exposures via oxidative molecular layer deposition, or oMLD, which provides advantages in conformality and uniformity on high aspect ratio substrates over other deposition techniques. But to date, the electrochemical properties of these oMLD PEDOT thin films have not been well-characterized. In this work, we examine the electrochemical properties of 5–100 nm thick PEDOT films formed using 20–175 oMLD deposition cycles. We find that film thickness of oMLD PEDOT films affects the orientation of ordered domains leading to a substantial change in charge storage capacity. Interestingly, we observe a minimum in charge storage capacity for an oMLD PEDOT film thickness of ~30 nm (60 oMLD cycles at 150 °C), coinciding with the highest degree of face-on oriented PEDOT domains as measured using grazing incidence wide angle X-ray scattering (GIWAXS). Thinner and thicker oMLD PEDOT films exhibit higher fractions of oblique (off-angle) orientations and corresponding increases in charge capacity of up to 120 mA h g -1 . Electrochemical measurements suggest that higher charge capacity in films with mixed domain orientation arise from the facile transport of ions from the liquid electrolyte into the PEDOT layer. Greater exposure of the electrolyte to PEDOT domain edges is posited to facilitate faster ion transport in these mixed domain films. In conclusion, these insights will inform future design of PEDOT coated high-aspect ratio structures for electrochemical energy storage and water treatment.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Effect of thickness on metal-to-semiconductor transition in 2-dimensional TiN thin films

Titanium nitride thin films have been grown on c-plane sapphire substrates using a pulsed laser deposition technique in the thickness range of 6–45 nm. X-ray diffraction (XRD) analysis has demonstrated TiN (111) as the preferred orientation of growth on the sapphire substrates. The XRD measurements have also indicated that orientational alignment between the TiN and the sapphire improved with an increase in the TiN film thickness. A change in the resistivity behavior of the TiN thin films from metallic to semiconducting has been observed as the TiN film thickness is reduced below 15 nm. Analyzing and fitting of TiN films’ conductivity data have shown that while the Arrhenius law governs their conductivity in the temperature range of 300–350 K, conductivity values of the films follow the variable range hopping mechanism below 300 K.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Detector thickness effects on nanosecond-gated imager response

Hybrid CMOS multi-frame imagers with exposure times down to ~2 ns have made significant impacts in high energy density physics and inertial confinement fusion research. The detector thickness is a key parameter in both detector quantum efficiency and temporal response. The Icarus hybrid CMOS imager has been fabricated with Si detector thicknesses of 8, 25, and 100 µm. The temporal response of imaging sensors with exposure time down to 2 ns has been examined and compared to directly measured photodiode current. The 100-μm thick variant displays extended features related to charge carrier collection and is more susceptible to field collapse. Here, we also demonstrate charge collection time effects on spatial response.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Low-efficiency-droop c -plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Efficiency droop at high current densities is a problem for InGaN-based light-emitting diodes (LEDs), especially for conventional c-plane devices. The large internal electric fields in c-plane quantum wells (QWs) lead to an increase in the active region carrier density (n), causing the electrical efficiency droop onset to occur at low current densities. Here, we present an approach to reduce the internal electric fields (Eint) in c-plane QWs by placing doped p-type and n-type GaN barriers close to the QW. The reduced Eint also allows a thick QW active region design, which helps to lower n to further reduce the droop. The concept of using doped barriers to control Eint is explained using theory and device simulations. Following that, multiple series of thick single QW (SQW) LEDs were grown and characterized. Key parameters in the epitaxial design such as the doping levels and the relative position of the doped barriers were systematically studied and optimized. In conclusion, by using optimized doped barriers and a thick SQW, c-plane LEDs with a low-efficiency droop of 14% at 300 A/cm2 [with respect to the peak external quantum efficiency (EQE)] and a high peak EQE of 49% were demonstrated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Ferroelectric behavior of sputter deposited Al 0.72 Sc 0.28 N approaching 5 nm thickness

Ferroelectric Al 1-x Sc x N has raised much interest in recent years due to its unique ferroelectric properties and complementary metal oxide semiconductor back-end-of-line compatible processing temperatures. Potential applications in embedded nonvolatile memory, however, require ferroelectric materials to switch at relatively low voltages. One approach to achieving a lower switching voltage is to significantly reduce the Al 1-x Sc x N thickness. In this work, ferroelectric behavior in 5-27 nm films of sputter deposited Al 0.72 Sc 0.28 N has been studied. We find that the 10 kHz normalized coercive field increases from 4.4 to 7.3 MV/cm when reducing the film thickness from 27.1 to 5.4 nm, while over the same thickness range, the characteristic breakdown field of a 12.5 μm radius capacitor increases from 8.3 to 12.1 MV/cm. In conclusion, the 5.4 nm film demonstrates ferroelectric switching at 5.5 V when excited with a 500 ns pulse and a switching speed of 60 ns.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

A coded aperture with sub-mean-free-path thickness for implosion geometry imaging on ICF and IFE experiments

Inertial confinement fusion and inertial fusion energy experiments diagnose the geometry of the fusion region through imaging of the neutrons released through fusion reactions. Pinhole arrays typically used for such imaging require thick substrates to obtain high contrast along with a small pinhole diameter to obtain high resolution capability, resulting in pinholes that have large aspect ratios. This leads to expensive pinhole arrays that have small solid angles and are difficult to align. Here, we propose a coded aperture with scatter and partial attenuation (CASPA) for fusion neutron imaging that relaxes the thick substrate requirement for good image contrast. These coded apertures are expected to scale to larger solid angles and are easier to align without sacrificing imaging resolution or throughput. We use Monte Carlo simulations (Geant4) to explore a coded aperture design to measure neutron implosion asymmetries on fusion experiments at the National Ignition Facility (NIF) and discuss the viability of this technique, matching the current nominal resolution of 10 µm. The results show that a 10 mm thick tungsten CASPA can image NIF implosions with neutron yields above 10 14 with quality comparable to unprocessed data from a current NIF neutron imaging aperture. Furthermore, this CASPA substrate is 20 times thinner than the current aperture arrays for fusion neutron imaging and less than one mean free-path of 14.1 MeV neutrons through the substrate. Since the resolution, solid angle, and throughput are decoupled in coded aperture imaging, the resolution and solid angle achievable with future designs will be limited primarily by manufacturing capability.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Thickness scaling and ferroelectric switching in wurtzite structure zinc magnesium oxide thin films

This study reports the thickness scaling of sputtered ferroelectric Zn 0.61 Mg 0.39 O (ZMO) thin films down to 43 nm. Encapsulated IrO 2 /ZMO/Ir capacitors exhibited switchable polarizations exceeding 50 μC cm −2 and coercive fields that increased from 3.9 to 4.4 MV cm −1 as the thickness decreased. Switching kinetics are best described by the simultaneous non-linear nucleation and the growth model. Bimodal switching is prevalent at low thicknesses, with the fastest switching times measured to be approximately 400 ns. Device encapsulation made ZMO switching kinetics more abrupt, potentially due to changes in the concentration of atmosphere-induced defects such as hydroxides. These results demonstrate stable ferroelectricity and sub-microsecond switching in sub-50 nm wurtzite ZMO, highlighting its potential as a low-voltage ferroelectric for integrated nonvolatile memory applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Friction stir welding of thick 7175 aluminium alloy plates for deepwater riser applications

To substantially reduce the cost of extracting petroleum from ultra-deepwater sources, manufacturing risers from 7175 aluminium (Al) alloys rather than steels is being considered. Friction stir welding (FSW), a solid-phase joining technique, is widely applied to 7XXX Al alloys because its mechanical properties are retained within the nugget zone. And, the primary technical objective of the current study is the development of high-strength, corrosion-resistant weldments that connect 7175 Al riser flanges and pipes. However, as the welding thickness increases, the welding speed can be greatly impeded, which lowers the manufacturing efficiency and weakens the mechanical properties in the heat affected zone (next to the nugget). Therefore, obtaining high-performance thick plate 7175 Al alloy joints via FSW is challenging. To overcome this dilemma, the current work optimises the tool design and welding parameters for achieving high-performance joints between 25.4 mm thick 7175 Al alloy plates in butt joint configuration.

Wang, Tianhao↗
DOE OSTI2020

Dependence of polytetrafluoroethylene reflectance on thickness at visible and ultraviolet wavelengths in air

Polytetrafluoroethylene (PTFE) is an excellent diffuse reflector widely used in light collection systems for particle physics experiments. However, the reflectance of PTFE is a function of its thickness. Here, in this work, we investigate this dependence in air for light of wavelengths 260 nm and 450 nm using two complementary methods. We find that PTFE reflectance for thicknesses from 5 mm to 10 mm ranges from 92.5% to 94.5% at 450 nm, and from 90.0% to 92.0% at 260 nm. We also see that the reflectance of PTFE of a given thickness can vary by as much as 2.7% within the same piece of material. Finally, we show that placing a specular reflector behind the PTFE can recover the loss of reflectance in the visible without introducing a specular component in the reflectance.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Selection of the silicon sensor thickness for the Phase-2 upgrade of the CMS Outer Tracker

During the operation of the CMS experiment at the High-Luminosity LHC the silicon sensors of the Phase-2 Outer Tracker will be exposed to radiation levels that could potentially deteriorate their performance. Previous studies had determined that planar float zone silicon with n-doped strips on a p-doped substrate was preferred over p-doped strips on an n-doped substrate. The last step in evaluating the optimal design for the mass production of about 200 m$^{2}$ of silicon sensors was to compare sensors of baseline thickness (about 300 μm) to thinned sensors (about 240 μm), which promised several benefits at high radiation levels because of the higher electric fields at the same bias voltage. This study provides a direct comparison of these two thicknesses in terms of sensor characteristics as well as charge collection and hit efficiency for fluences up to 1.5 × 10$^{15}$ n$_{eq}$/cm$^{2}$. The measurement results demonstrate that sensors with about 300 μm thickness will ensure excellent tracking performance even at the highest considered fluence levels expected for the Phase-2 Outer Tracker.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Reflectance and fluorescence characteristics of PTFE coated with TPB at visible, UV, and VUV as a function of thickness

Polytetrafluoroethylene (PTFE) is an excellent diffuse reflector widely used in light collection systems for particle physics experiments. In noble element systems, it is often coated with tetraphenyl butadiene (TPB) to allow detection of vacuum ultraviolet scintillation light. Here, in this work this dependence is investigated for PTFE coated with TPB in air for light of wavelengths of 200 nm, 260 nm, and 450 nm. The results show that TPB-coated PTFE has a reflectance of approximately 92% for thicknesses ranging from 5 mm to 10 mm at 450 nm, with negligible variation as a function of thickness within this range. A cross-check of these results using an argon chamber supports the conclusion that the change in thickness from 5 mm to 10 mm does not affect significantly the light response at 128 nm. Our results indicate that pieces of TPB-coated PTFE thinner than the typical 10 mm can be used in particle physics detectors without compromising the light signal.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

The age–chemical abundance structure of the Galactic disc – II. α -dichotomy and thick disc formation

ABSTRACT We extend our previous work on the age–chemical abundance structure of the Galactic outer disc to the inner disc (4 < r < 8 kpc) based on the SDSS/APOGEE survey. Different from the outer disc, the inner disc stars exhibit a clear bimodal distribution in the [Mg/Fe]–[Fe/H] plane. While a number of scenarios have been proposed in the literature, it remains challenging to recover this bimodal distribution with theoretical models. To this end, we present a chemical evolution model embedding a complex multiphase inner disc formation scenario that matches the observed bimodal [Mg/Fe]–[Fe/H] distribution. In this scenario, the formation of the inner disc is dominated by two main starburst episodes $6\,$Gyr apart with secular, low-level star formation activity in between. In our model, the first starburst occurs at early cosmic times ($t\sim 1\,$ Gyr) and the second one $6\,$ Gyr later at a cosmic time of $t\sim 7\,$ Gyr. Both these starburst episodes are associated with gas accretion events in our model, and are quenched rapidly. The first starburst leads to the formation of the high-α sequence, and the second starburst leads to the formation of the metal-poor low-α sequence. The metal-rich low-α stars, instead, form during the secular evolution phase between the two bursts. Our model shows that the α-dichotomy originates from the rapid suppression of star formation after the first starburst. The two starburst episodes are likely to be responsible for the formation of the geometric thick disc (z >1 kpc), with the old inner thick disc and the young outer thick disc forming during the first and the second starbursts, respectively.

Lian, Jianhui↗
DOE OSTI2021

Thickness-independent transport in thin (001)-oriented cadmium arsenide films

The three-dimensional Dirac semimetal is a parent phase for a variety of topological phases that can be generated by tuning parameters in material growth or device operation. Notably, it has recently been found that cadmium arsenide, which is ordinarily a three-dimensional Dirac semimetal, can nevertheless realize a three-dimensional topological insulator in (001)-oriented films about 50-nm thick. In this work, we study the quantum Hall effect in thin (001)-oriented cadmium arsenide films, their thickness ranging from 12 to 24 nm. When the carrier density is kept approximately constant across the different films, quantum transport reveals an identical underlying picture. The result is shown to be consistent with the transport's origin in the surface states of a three-dimensional topological insulator, but problematic for a perspective in which the quantum Hall effect originates from the confined subbands of the bulk band structure. As a result, these thin-film results complement previous studies of the quantum Hall effect in 50-nm-thick films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗