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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9

Performance of Li-Ion Cells Under Battery Voltage Charge Control

A study consisting of electrochemical characterization and Low-Earth-Orbit (LEO) cycling of Li-Ion cells from three vendors was initiated in 1999 to determine the cycling performance and to infuse the new technology in the future NASA missions. The 8-cell batteries included in this evaluation are prismatic cells manufactured by Mine Safety Appliances Company (MSA), cylindrical cells manufactured by SAFT and prismatic cells manufactured by Yardney Technical Products, Inc. (YTP). The three batteries were cycle tested in the LEO regime at 40% depth of discharge, and under a charge control technique that consists of battery voltage clamp with a current taper. The initial testing was conducted at 20 C; however, the batteries were cycled also intermittently at low temperatures. YTP 20 Ah cells consisted of mixed-oxide (Co and Ni) positive, graphitic carbon negative, LIPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 32 V. The low temperature cycling tests started after 4575 cycles at 20 C. The cells were not capable of cycling. at low temperature since the charge acceptance at battery level was poor. There was a cell in the battery that showed too high an end-of-charge (EOC) voltage thereby limiting the ability to charge the rest of the cells in the battery. The battery has completed 6714 cycles. SAFT 12 Ah cells consisted of mixed-oxide (Co and NO positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was for 30.8 V. The low temperature cycling tests started after 4594 cycles at 20 C. A cell that showed low end of discharge (EOD) and EOC voltages and three other cells that showed higher EOC voltages limited the charge acceptance at the selected voltage limit during charge. The cells were capable of cycling at 10 C and 0 C but the charge voltage limit had to be increased to 34.3 V (4.3 V per cell). The low temperature cycling may have induced poor chargeability since the voltage had to be increased to achieve the required charge input. The battery has completed 6226 cycles. MSA 10 Ah cells consisted of Co oxide positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 30.8 V. The low temperature cycling tests were started after 2182 cycles at 20 C. The cells were capable of cycling at 10 C and 0 C. Like SAFT, the voltage limit on charge had to be increased to 36 V (4.5 V per cell). There was a cell (cell S/N 13) in the battery that showed poor performance features such as low EOD voltage and high EOC voltage. The battery has completed 3441 cycles. A reconditioning procedure that consisted of C15 charge to a taper current of C/100 and C/20 discharge improved the voltage behavior of SAFT and MSA cells with no significant effect on YTP cells. We have demonstrated that the charge operation with VT clamp at battery rather than at cell level is feasible for onboard Li-Ion battery operation.

Rao, Gopalakrishna M.↗

Twin-capacitive shaft angle encoder with analog output signal

A precision capacitive shaft encoder providing a dc signal corresponding to the angular position of a shaft is described. Two variable capacitances are coupled in tandem by a rotatable shaft. Each capacitor has a capacitance that varies linearly with a change in the angular position of the shaft. The sum of the two capacitances is always constant for any angular position of the shaft. Each capacitance is alternately coupled to a reference dc voltage and a discharge circuit. The capacitances are electrically coupled in series and the charge periodically acquired at the junction of the capacitance is a function of the position of the shaft. An error-compensating voltage is imposed on the junction when the capacitances are coupled to the reference voltages. The junction is coupled to sample-and-hold apparatus provided with a error-correcting circuit.

Hruby, R. J.↗

Nonlinear, nonlaminar-3D computation of electron motion through the output cavity of a klystron

The equations of motion used in the computation are discussed along with the space charge fields and the integration process. The following assumptions were used as a basis for the computation: (1) The beam is divided into N axisymmetric discs of equal charge and each disc into R rings of equal charge. (2) The velocity of each disc, its phase with respect to the gap voltage, and its radius at a specified position in the drift tunnel prior to the interaction gap is known from available large signal one dimensional programs. (3) The fringing rf fields are computed from exact analytical expressions derived from the wave equation assuming a known field shape between the tunnel tips at a radius a. (4) The beam is focused by an axisymmetric magnetic field. Both components of B, that is B sub z and B sub r, are taken into account. (5) Since this integration does not start at the cathode but rather further down the stream prior to entering the output cavity it is assumed that each electron moved along a laminar path from the cathode to the start of integration.

Albers, L. U.↗

Ultrasonic transducer with a two-dimensional Gaussian field profile

A transducer is described which generates a two-dimensional Gaussian field by controlling both the position of multiple circular electrodes and the voltage applied to each electrode. The transducer is constructed by depositing concentric rings electrodes onto one flat surface of a circular piezoelectric crystal disk and attaching the rings to an impedance matching network which acts as a voltage divider. Geometrical inter-ring separations and electrical inter-ring impedances are designed to minimize the error between the generated acoustic field, modeled as a piecewise linear function, and the desired Gaussian distribution. Total mean squared error between the averaged far-field data and a Gaussian shape is less than two percent.

Claus, R. O.↗

Low-Pressure Gas Effects on the Potency of an Electron Beam Against Ceramic Cloth

An 8-kv electron beam with a current in the neighborhood of 100 mA from the Ukrainian space welding "Universal Hand Tool" (UHT) burned holes in Nextel AF-62 ceramic cloth designed to withstand temperatures up to 1,427 C. The burnthrough time was on the order of 8 scc at standoff distances between UHT and cloth ranging from 6-24 in. At both closer (2 in.) and farther (48 in.) standoff distances the potency of the beam against the cloth declined and the burnthrough time went up significantly. Prior to the test it had been expected that the beam would lay down a static charge on the cloth and be deflected without damaging the cloth. The burnthrough is thought to be an effect of partial transmission of beam power by a stream of positive ions generated by the high-voltage electron beam from contaminant gas in the "vacuum" chamber. A rough quantitative theoretical computation appears to substantiate this possibility.

Nunes, A. C., Jr.↗

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Phillips, Thomas A.↗

NASA Tech Briefs, March 2006

Topics covered include: Medical Signal-Conditioning and Data-Interface System; Instruments for Reading Direct-Marked Data-Matrix Symbols; Processing EOS MLS Level-2 Data; Ground Processing of Data From the Mars Exploration Rovers; Estimating Total Electron Content Using 1,000+ GPS Receivers; NASA Solar Array Demonstrates Commercial Potential; Improved Control of Charging Voltage for Li-Ion Battery; Programmable Pulse-Position-Modulation Encoder; Wavelength-Agile External-Cavity Diode Laser for DWDM; Pattern-Recognition Processor Using Holographic Photopolymer; Submicrosecond Power-Switching Test Circuit; Three-Function Logic Gate Controlled by Analog Voltage; Integrated System for Autonomous Science; Montage Version 3.0; Utilizing AI in Temporal, Spatial, and Resource Scheduling; Satellite Image Mosaic Engine; Architecture for Control of the K9 Rover; HFGMC Enhancement of MAC/GMC; Automated Activation and Deactivation of a System Under Test; Cleaning Carbon Nanotubes by Use of Mild Oxygen Plasmas; Generating Aromatics From CO2 on Mars or Natural Gas on Earth; Attaching Thermocouples by Peening or Crimping; Heat Treatment of Friction-Stir-Welded 7050 Aluminum Plates; Generating Breathable Air Through Dissociation of N2O; High-Performance Scanning Acousto-Ultrasonic System; Correction for Thermal EMFs in Thermocouple Feedthroughs; Using Quasiparticle Poisoning To Detect Photons; Estimating Resolution Lengths of Hybrid Turbulence Models; Education and Training Module in Alertness Management; Cargo-Positioning System for Next-Generation Spacecraft; Micro-Imagers for Spaceborne Cell-Growth Experiments; Holographic Solar Photon Thrusters; Plasma-Based Detector of Outer-Space Dust Particles; and Generation of Data-Rate Profiles of Ka-Band Deep-Space Links.

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Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0.1-(micron)meter MOSFET's with Epitaxial and (delta)-Doped Channels

A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub-0.1-(micron)meter MOSFET architectures with epitaxial channels and delta doping is presented. The need for enhancing the fluctuation resistance of the sub-0.1-(micron)meter generation transistors is highlighted by presenting summarized results from atomistic simulations of a wide range of conventional devices with uniformly doped channel. According to our atomistic results, the doping concentration dependence of the random dopant-induced threshold voltage fluctuations in conventional devices is stronger than the analytically predicted fourth-root dependence. As a result of this, the scaling of such devices will be restricted by the "intrinsic" random dopant-induced fluctuations earlier than anticipated. Our atomistic simulations confirm that the introduction of a thin epitaxial layer in the MOSFET's channel can efficiently suppress the random dopant-induced threshold voltage fluctuations in sub-0.1-(micron)meter devices. For the first time, we observe an "anomalous" reduction in the threshold voltage fluctuations with an increase in the doping concentration behind the epitaxial channel, which we attribute to screening effects. Also, for the first time we study the effect of a delta-doping, positioned behind the epitaxial layer, on the intrinsic threshold voltage fluctuations. Above a certain thickness of epitaxial layer, we observe a pronounced anomalous decrease in the threshold voltage fluctuation with the increase of the delta doping. This phenomenon, which is also associated with screening, enhances the importance of the delta doping in the design of properly scaled fluctuation-resistant sub-0.1-(micron)meter MOSFET's. Index Terms-Doping, fluctuations, MOSFET, semiconductor device simulation, silicon devices, threshold.

Asenov, Asen↗

Two-dimensional Inductive Position Sensing System

A two-dimensional inductive position sensing system uses four drive inductors arranged at the vertices of a parallelogram and a sensing inductor positioned within the parallelogram. The sensing inductor is movable within the parallelogram and relative to the drive inductors. A first oscillating current at a first frequency is supplied to a first pair of the drive inductors located at ends of a first diagonal of the parallelogram. A second oscillating current at a second frequency is supplied to a second pair of the drive inductors located at ends of a second diagonal of the parallelogram. As a result, the sensing inductor generates a first output voltage at the first frequency and a second output voltage at the second frequency. A processor determines a position of the sensing inductor relative to the drive inductors using the first output voltage and the second output voltage.

Youngquist, Robert C.↗

Evaluation of the amperex 56 TVP photomultiplier

Characteristics were measured for the Amperex 56 TVP 42 mm-diameter photomultiplier. Some typical photomultiplier characteristics-such as gain, dark current, transit and rise times-are compared with data provided. Photomultiplier characteristics generally not available such as the single photoelectron time spread, the relative collection efficiency, the relative anode pulse amplitude as a function of the voltage between the photocathode and focusing electrode, and the position of the photocathode sensing area were measured and are discussed for two 56 TVP's. The single photoelectron time spread, the relative collection efficiency, and the transit time difference as a function of the voltage between photocathode and focusing electrode were also measured and are discussed, particularly with respect to the optimization of photomultiplier operating conditions for timing applications.

Lo, C. C.↗

Ferroelectric Pump

A ferroelectric pump has one or more variable volume pumping chambers internal to a housing. Each chamber has at least one wall comprising a dome shaped internally prestressed ferroelectric actuator having a curvature and a dome height that varies with an electric voltage applied between an inside and outside surface of the actuator. A pumped medium flows into and out of each pumping chamber in response to displacement of the ferroelectric actuator. The ferroelectric actuator is mounted within each wall and isolates each ferroelectric actuator from the pumped medium, supplies a path for voltage to be applied to each ferroelectric actuator, and provides for positive containment of each ferroelectric actuator while allowing displacement of the entirety of each ferroelectric actuator in response to the applied voltage.

Jalink, Antony, Jr.↗

Development and fabrication of a high current, fast recovery power diode

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Berman, A. H.↗

Spacecraft Electrostatic Radiation Shielding

This project analyzed the feasibility of placing an electrostatic field around a spacecraft to provide a shield against radiation. The concept was originally proposed in the 1960s and tested on a spacecraft by the Soviet Union in the 1970s. Such tests and analyses showed that this concept is not only feasible but operational. The problem though is that most of this work was aimed at protection from 10- to 100-MeV radiation. We now appreciate that the real problem is 1- to 2-GeV radiation. So, the question is one of scaling, in both energy and size. Can electrostatic shielding be made to work at these high energy levels and can it protect an entire vehicle? After significant analysis and consideration, an electrostatic shield configuration was proposed. The selected architecture was a torus, charged to a high negative voltage, surrounding the vehicle, and a set of positively charged spheres. Van de Graaff generators were proposed as the mechanism to move charge from the vehicle to the torus to generate the fields necessary to protect the spacecraft. This design minimized complexity, residual charge, and structural forces and resolved several concerns raised during the internal critical review. But, it still is not clear if such a system is costeffective or feasible, even though several studies have indicated usefulness for radiation protection at energies lower than that of the galactic cosmic rays. Constructing such a system will require power supplies that can generate voltages 10 times that of the state of the art. Of more concern is the difficulty of maintaining the proper net charge on the entire structure and ensuring that its interaction with solar wind will not cause rapid discharge. Yet, if these concerns can be resolved, such a scheme may provide significant radiation shielding to future vehicles, without the excessive weight or complexity of other active shielding techniques.

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Method and device for detection of a substance

A device is disclosed in which a discharge grid is provided that has a sufficiently high voltage potential across its grid electrodes so that a substance with predetermined characteristics causes an electric spark discharge to occur between electrodes. The electric spark discharge alters the predetermined characteristics of the substance by oxidation and/or vaporization so that the substance is no longer detectable by an electric spark discharge. A means is provided for counting the number of electric spark discharges. This count indicates the concentration of the substance having the predetermined characteristics. One embodiment disclosed detects longitudinally extending carbon fibers suspended in a gaseous medium. Another embodiment provides for the detection of carbon fibers adhesively attached to a collection tape. The tape is positioned against the discharge grid and a high voltage is periodically applied across the grid electrodes until electric spark discharges no longer occur.

Yang, L. C.↗

Studies Of Positive-Position-Feedback Control

Report discusses theoretical and experimental studies of positive-position-feedback control for suppressing vibrations in large flexible structures. Positive-position-feedback control involves placement of actuators and sensors on structure; control voltages applied to actuators in response to outputs of sensors processed via compensator algorithm. Experiments demonstrate feasibility of suppressing vibrations by positive position feedback, and spillover of vibrational energy into uncontrolled modes has stabilizing effect if control gain sufficiently small.

Fanson, James L.↗

Eight-cm mercury ion thruster system technology

The technology status of 8 cm diameter electron bombardment ion thrusters is presented. Much of the technology resulting from the 5 cm diameter thruster has been adapted and improved upon to increase the reliability, durability, and efficiency of the 8 cm thruster. Technology discussed includes: dependence of neutralizer tip erosion upon neutralizer flow rate; impregnated and rolled-foil insert cathode performance and life testing; neutralizer position studies; thruster ion beam profile measurements; high voltage pulse ignition; high utilization ion machined accelerator grids; deposition internal and external to the thruster; thruster vectoring systems; thruster cycling life testing and thruster system weights for typical mission applications.

Source record↗

8-cm mercury ion thruster system technology

The technology status of 8-cm diameter electron bombardment ion thrusters is presented. Much of the technology resulting from the 5-cm diameter thruster has been adapted and improved upon to increase the reliability, durability, and efficiency of the 8-cm thruster. Technology discussed includes: dependence of neutralizer tip erosion upon neutralizer flow rate; impregnated and rolled-foil insert cathode performance and life testing; neutralizer position studies; thruster ion beam profile measurements; high voltage pulse ignition; high utilization ion machined accelerator grids; deposition internal and external to the thruster; thruster vectoring systems; thruster cycling life testing and thruster system weights for typical mission applications.

Source record↗

Stepping optical path difference in an interferometer

Stepping method permits higher amplitude modulation of secondary mirror of Fourier interferometer. Amplitude of mirror motion is limited only by available voltage drive on error-correcting actuator. Closed-loop controller provides servo error voltage linearly proportional to offset from proper null position. Bidirectional counter serves to count number of reference laser fringes offset from null position.

Schindler, R. A.↗