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150 records · Page 9

Metastable Intermediates in Amorphous Titanium Oxide: A Hidden Role Leading to Ultra-Stable Photoanode Protection

Metastable intermediates represent a non-equilibrium state of matter that may impose profound impacts to materials properties beyond our understandings of monolithic and equilibrium systems. Here, we report a discovery of hidden metastable intermediates in amorphous TiO 2 thin films and their critical role in electrochemical damage. These intermediates have a non-bulk crystal-like structure and exhibit significantly higher electrical conductivity than both the amorphous and the crystalline phases. When these TiO 2 films are applied to protect Si photoelectrochemical (PEC) photoanodes, the intermediates can induce localized high electrical currents that largely accelerate the etching of the TiO 2 film and the Si electrode underneath. The intermediates can be effectively suppressed by raising their nucleation barrier via reducing the film thickness from 24 to 2.5 nm. The homogeneous amorphous TiO 2 -film-coated Si photoanodes achieved more than 500 h of PEC water oxidation at a steady photocurrent density of over 30 mA·cm –2 .

36 MATERIALS SCIENCE↗

First elliptical cavity fabricated with metallographic polishing

The development of an easy and inexpensive Nb sheet preparation process, based on metallographic polishing, has been presented earlier [1, 2]. The aim is to remove the damage layer caused by the rolling process on the sheet in order to reduce the length of surface treatment on completed cavities. The process has been applied on a QPR sample and tested in RF, without any surface chemistry. Its surface resistance is about 4 times lower than the EP baseline at 414 MHz, 2 K [3]. The first elliptical cavity based on this principle has been produced at KEK, starting with large polished sheets developed in collaboration between IJCLAB, and the company LAMPLAN. We present its 1st RF test at KEK, with a HF rinsing and a recrystallization treatment at 600C for 10h, without any chemical etching at first. References: *1: C. Antoine and R. Crooks, “Reducing Electropolishing Time with Chemical-Mechanical Polishing”, SRF2009. *2: O. Hryhorenko, et al., "An innovative approach of surface polishing for SRF cavity applications". Journal of Manufacturing and Materials Processing, 2023. 7(2): p. 62. *3: O. Hryhorenko, et al., "Recent advances in metallographic polishing for SRF application", SRF2023.

Dohmae, Takeshi [High Energy Accelerator Research ↗

Template Synthesis, Structure, and Magnetic Properties of Layered Nanowires

Nanowires (NWs) consisting of Ni/Cu and Co/Cu alternating layers with a diameter of 100 nm and layer thicknesses varying between 10 and 500 nm are prepared by template synthesis in pores of polymer track-etched membranes. Bath compositions and different regimes for pulsed electrodeposition of NWs are explored. A procedure for electrodeposition of NWs using pulses of equal charge is developed. By diminishing the amount of charge per pulse, initially we manage to lower the layer thickness to 10–15 nm, but further diminishing of charge in pulses leads to the blending of elemental composition of adjacent layers and/or formation of rod–shell nanostructures within the NWs. The coercive force (15–30 mT) and residual magnetization of our layered NWs are determined from magnetization measurements. For NWs with a layer thickness of 50–100 nm, the magnetization curves recorded in the out-of-plane and in-plane geometries are similar in shape and have similar parameters. For NWs with thicker layers (250 and 500 nm), magnetization curves are markedly different due to magnetic anisotropy (an easy magnetization axis emerges longitudinally to NWs) and interference between neighboring NWs. Magnetic force microscopy of isolated NWs identifies that the NWs comprise magnetic regions extending over ~100–150 nm. The NW can be partially remagnetized by applying an external magnetic field (+16 mT) longitudinally.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Collaborative Research: Understanding Sheaths and Presheaths in Magnetized and Unmagnetized Plasmas

The common states of matter on Earth are solids, liquids and gases. Putting energy into gases can result in the 4th state of matter known as plasma, which consists of electrically charged particles (electrons and ions, both positive and negative) and neutral atoms and molecules. While uncommon on the Earth, plasma makes up more than 99% of the visible matter in the universe. Where plasma comes in contact with material boundaries, a thin region near the plasma boundary usually forms to isolate the plasma from the boundary. This thin region is called the plasma sheath. Experiments performed under aimed at improving our understanding of plasma sheaths and associated phenomena as fundamental to understanding all bounded plasmas. Plasma studied in this work are similar to those used in plasma applications such as the etching of semiconducting materials to make computer chips, in plasma space propulsion satellite engines, and used in experimental plasma fusion devices. The majority of experimental studies were carried out at the University of Wisconsin-Madison in close collaboration with Dr. Severn at the University of San Diego (USD), where most of diagnostic development for laser-induced fluorescence (LIF) measurements were carried out. USD is primarily an undergraduate institution. The award made possible outreach activities that promoted engagement of undergraduate students with diverse backgrounds in science, technology, engineering and mathematics (STEM) disciplines.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Etching of Si 3 N 4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

An etching system based on the interaction of electrons extracted from a direct current (DC) hollow-cathode (HC) Ar plasma and injected towards a Si3N4 covered silicon substrate located in the downstream reactive environment created by an additional remote CF 4 /O 2 plasma source was developed and evaluated. By controlling the properties of the injected beam electrons, this approach allows to deliver energy to a surface functionalized by exposure to reactive species, and initiate surface etching. The energy of the primary beam electrons is controlled by the acceleration voltage relative to the HC discharge. Ar atoms flow from the high-pressure HC discharge into the low pressure downstream reactive environment in the process chamber. For an acceleration voltage greater than the ionization potential of Ar and/or process gas species, the energetic primary beam electrons produce a secondary plasma in the process chamber, and can also cause additional dissociation. We have characterized the properties of the secondary plasma and also surface etching of Si 3 N 4 as a function of process parameters, including acceleration voltage (0-80 V), discharge current of the HC discharge (1-2 A), pressure (3.5-20 mTorr), source to substrate distance (1.5 to 5 cm), and feed gas composition (20% and 80% O2 in CF 4 /O 2 ). The electron energy probability function (EEPF) measured with a Langmuir probe about 2.5 cm below the extraction ring suggests several major groups of electrons for this situation, including high energy primary beam electrons with an energy that varies as the acceleration voltage is changed and low energy electrons produced by beam electron-induced ionization of the Ar gas in the process chamber. When a remote CF 4 /O 2 plasma is additionally coupled to the process chamber, Si 3 N 4 surfaces can be functionalized, and by varying the energy of the beam electrons, Si 3 N 4 etching can be induced by electron-neutral synergy effect with plasma-surface interaction. For conditions without beam electron injection, the remote plasma etching rate (ER) of Si 3 N 4 depends strongly on the O 2 concentration in the CF 4 /O 2 processing gas mixture and can be suppressed for O 2 -rich process conditions by the formation of a SiONF passivation layer on the Si 3 N 4 surface. The combination of the HC electron beam source with the remote plasma source (HCEB-RP) makes it possible to induce Si 3 N 4 etching for O 2 -rich remote plasma conditions where remote plasma by itself produces negligible Si 3 N 4 etching. The electron enhanced etching of Si 3 N 4 depends strongly on O 2 /CF 4 mixing ratio reflecting changing arrival rates of O and F species at the surface. Optical emission spectroscopy was used to estimate the ratio of gas phase F and O densities and found to be controlled by the gas mixing ratio and independent of HC EB operating conditions. At this time the detailed sequence of events operative in the etching mechanism is unclear. While the increase of the electron energy is ultimately responsible for initiating surface etching, at present we cannot rule out a role of ions from the simultaneously produced secondary plasma in plasma surface interaction mechanisms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Carbon Nanotube Microarrays Grown on Nanoflake Substrates

This innovation consists of a new composition of matter where single-walled carbon nanotubes (SWNTs) are grown in aligned arrays from nanostructured flakes that are coated in Fe catalyst. This method of growth of aligned SWNTs, which can yield well over 400 percent SWNT mass per unit substrate mass, exceeds current yields for entangled SWNT growth. In addition, processing can be performed with minimal wet etching treatments, leaving aligned SWNTs with superior properties over those that exist in entangled mats. The alignment of the nanotubes is similar to that achieved in vertically aligned nanotubes, which are called "carpets. " Because these flakes are grown in a state where they are airborne in a reactor, these flakes, after growing SWNTs, are termed "flying carpets. " These flakes are created in a roll-to-roll evaporator system, where three subsequent evaporations are performed on a 100-ft (approx. =30-m) roll of Mylar. The first layer is composed of a water-soluble "release layer, " which can be a material such as NaCl. After depositing NaCl, the second layer involves 40 nm of supporting layer material . either Al2O3 or MgO. The thickness of the layer can be tuned to synthesize flakes that are larger or smaller than those obtained with a 40-nm deposition. Finally, the third layer consists of a thin Fe catalyst layer with a thickness of 0.5 nm. The thickness of this layer ultimately determines the diameter of SWNT growth, and a layer that is too thick will result in the growth of multiwalled carbon nanotubes instead of single-wall nanotubes. However, between a thickness of 0.5 nm to 1 nm, single-walled carbon nanotubes are known to be the primary constituent. After this three-layer deposition process, the Mylar is rolled through a bath of water, which allows catalyst-coated flakes to detach from the Mylar. The flakes are then collected and dried. The method described here for making such flakes is analogous to that which is used to make birefringent ink that is coated on U.S. currency. After deposition, the growth is carried out in a hot-filament chemical vapor deposition apparatus. A tungsten hot filament placed in the flow of H2 at a temperature greater than 1,600 C creates atomic hydrogen, which serves to reduce the Fe catalyst into a metallic state. The catalyst can now precipitate SWNTs in the presence of growth gases. The gases used for the experiments reported are C2H2, H2O, and H2, at rates of 2, 2, and 400 standard cubic centimeters per minute (sccm), respectively. In order to retain the flakes, a cage is constructed by spot welding stainless steel or copper mesh to form an enclosed area, in which the flakes are placed prior to growth. This allows growth gases and atomic hydrogen to reach the flakes, but does not allow the flakes, which rapidly nucleate SWNTs, to escape from the cage.

Schmidt, Howard K.↗