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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

A Comprehensive Analysis of the Physical Properties of Advanced GaAs/AlGaAs Junctions

Extensive studies have been performed on MQW junctions and structures because of their potential applications as avalanche photodetectors in optical communications and imaging systems. The role of the avalanche photodiode is to provide for the conversion of an optical signal into charge. Knowledge of junction physics, and the various carrier generation/recombination mechanisms, is crucial for effectively optimizing the conversion process and increasing the structure's quantum efficiency. In addition, the recent interest in the use of APDs in imaging systems has necessitated the development of semiconductor junctions with low dark currents and high gains for low light applications. Because of the high frame rate and high pixel density requirements in new imaging applications, it is necessary to provide some front-end gain in the imager to allow operation under reasonable light conditions. Understanding the electron/hole impact ionization process, as well as diffusion and surface leakage effects, is needed to help maintain low dark currents and high gains for such applications. In addition, the APD must be capable of operating with low power, and low noise. Knowledge of the effects of various doping configurations and electric field profiles, as well as the excess noise resulting from the avalanche process, are needed to help maintain low operating bias and minimize the noise output.

Menkara, Hicham M.↗
NASA NTRS2011

Reliability Evaluation of Base-Metal-Electrode Multilayer Ceramic Capacitors for Potential Space Applications

Base-metal-electrode (BME) ceramic capacitors are being investigated for possible use in high-reliability spacelevel applications. This paper focuses on how BME capacitors construction and microstructure affects their lifetime and reliability. Examination of the construction and microstructure of commercial off-the-shelf (COTS) BME capacitors reveals great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and 0.5 m, which is much less than that of most PME capacitors. BME capacitors can be fabricated with more internal electrode layers and thinner dielectric layers than PME capacitors because they have a fine-grained microstructure and do not shrink much during ceramic sintering. This makes it possible for BME capacitors to achieve a very high capacitance volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT). Most BME capacitors were found to fail with an early avalanche breakdown, followed by a regular dielectric wearout failure during the HALT test. When most of the early failures, characterized with avalanche breakdown, were removed, BME capacitors exhibited a minimum mean time-to-failure (MTTF) of more than 105 years at room temperature and rated voltage. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically around 12 for a number of BME capacitors with a rated voltage of 25V. This may suggest that the number of grains per dielectric layer is more critical than the thickness itself for determining the rated voltage and the life expectancy of the BME capacitor. The leakage current characterization and the failure analysis results suggest that most of these early avalanche failures are due to the extrinsic minor construction defects introduced during fabrication of BME capacitors. The concentration of the extrinsic defects must be reduced if the BME capacitors are considered for high reliability applications. There are two approaches that can reduce or prevent the occurrence of early failure in BME capacitors: (1) to reduce the defect concentration with improved processing control; (2) to prevent the use of BME capacitors under harsh external stress levels so that the extrinsic defects will never be triggered for a failure. In order to do so appropriate dielectric layer thickness must be determined for a given rated voltage.

Liu, David (Donhang)↗
NASA NTRS2011

Single photon detection with self-quenching multiplication

A photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletion region and an undepletion region. The photoelectronic device can act as a single photon detector or a single carrier multiplier. The avalanche self-quenching process allows electrical field reduction in the multiplication region by movement of the multiplication carriers, thus quenching the avalanche.

Zheng, Xinyu↗
NASA NTRS2016

Novel Photon-Counting Detectors for Free-Space Communication

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

Photons↗
NASA NTRSDate not supplied

Landslide Runout Analysis Using Remote Sensing for Lower and Upper Barun Lakes

Landslides are recognized as common triggers of glacial lake outburst floods in high mountain regions, but the remoteness of dangerous glacial lakes makes monitoring and disaster management very difficult. Using a very high resolution digital elevation model produced from a series of stereo satellite images, we simulate debris flows and rock avalanche runout around two very dangerous lakes in high mountain Nepal. We constrain particularly likely sources of these slope failures to simulate 79,800 potential debris flows and rock avalanches of volumes ranging from 1,000 m3 to 1,000,000 m3. This allowed us to identify zones in and around dangerous glacial lakes that are most exposed to landslide runout hazards, along with the most frequent source areas that produced landslides that may run into either of the two glacial lakes. Although our empirical-statistical model presented limitations that numerical models attempt to overcome, our probabilistic approach combined with a very high resolution DEM may shed new light on how to identify sources and impact areas of debris flows and rock avalanches that may cascade into downstream disasters.

landslides↗
NASA NTRS2007

Radiation Response of Emerging High Gain, Low Noise Detectors

Data illustrating the radiation response of emerging high gain, low noise detectors are presented. Ionizing dose testing of silicon internal discrete avalanche photodiodes, and 51-MeV proton testing of InGaAs/InAlAs avalanche photodiodes operated in Geiger mode are discussed.

avalanche photodiodes↗
NASA NTRS1972

Effects of tunneling on an IMPATT oscillator.

A phenomenological formulation that incorporates both the tunneling and avalanche mechanisms in an IMPATT diode is presented. The I-V characteristic of a diode where the two mechanisms are present is calculated. The agreement between the predicted I-V characteristics of diodes with both tunneling and avalanche processes and the measured ones indicates the soundness of the formulation presented.

Kwok, S. P.↗
NASA NTRS1973

Evaluation of the electro-optic direction sensor

Evaluation of a no-moving-parts single-axis star tracker called an electro-optic direction sensor (EODS) concept is described and the results are given in detail. The work involved experimental evaluation of a breadboard sensor yielding results which would permit design of a prototype sensor for a specific application. The laboratory work included evaluation of the noise equivalent input angle of the sensor, demonstration of a technique for producing an acquisition signal, constraints on the useful field-of-view, and a qualitative evaluation of the effects of stray light. In addition, the potential of the silicon avalanche-type photodiode for this application was investigated. No benefit in noise figure was found, but the easily adjustable gain of the avalanche device was useful. The use of mechanical tuning of the modulating element to reduce voltage requirements was also explored. The predicted performance of EODS in both photomultiplier and solid state detector configurations was compared to an existing state-of-the-art star tracker.

Johnson, A. R.↗
NASA NTRS1970

A solenoid failure detection system for cold gas attitude control jet valves

The development of a solenoid valve failure detection system is described. The technique requires the addition of a radioactive gas to the propellant of a cold gas jet attitude control system. Solenoid failure is detected with an avalanche radiation detector located in the jet nozzle which senses the radiation emitted by the leaking radioactive gas. Measurements of carbon monoxide leakage rates through a Mariner type solenoid valve are presented as a function of gas activity and detector configuration. A cylindrical avalanche detector with a factor of 40 improvement in leak sensitivity is proposed for flight systems because it allows the quantity of radioactive gas that must be added to the propellant to be reduced to a practical level.

Johnston, P. A.↗
NASA NTRS1974

Thermal surveillance of active volcanoes

The author has identified the following significant results. By the end of 1973, aerial infrared scanner traverses for thermal anomaly recordings of all Cascade Range volcanoes were essentially completed. Amplitude level slices of the Mount Baker anomalies were completed and compiled at a scale of 1:24,000, thus producing, for the first time, an accurate map of the distribution and intensity of thermal activity on Mount Baker. The major thermal activity is concentrated within the crater south of the main summit and although it is characterized by intensive solfataric activity and warm ground, it is largely subglacial, causing the development of sizable glacier perforation features. The outgoing radiative flux from the east breach anomalies is sufficient to account for the volume of ice melted to form the glacier perforations. DCP station 6251 has been monitoring a thermally anomalous area on the north slope of Mount Baker. The present thermal activity of Mount Baker accounts for continuing hydrothermal alteration in the crater south of the main summit and recurrent debris avalanches from Sherman Peak on its south rim. The infrared anomalies mapped as part of the experiment SR 251 are considered the basic evidence of the subglacial heating which was the probable triggering mechanism of an avalanche down Boulder Glacier on August 20-21, 1973.

Friedman, J. D.↗
NASA NTRS1974

The application of space technology to practical problems such as those currently facing the mountain sections of the State of Colorado

Rapid growth in small Colorado mountain communities and dangers posed by development in areas that are potentially dangerous to life and property due to natural processes are studied. Special attention was given to snow avalanche, mudflow, rockfall, landslide and flood, as well as the slow continuous and frequently imperceptible form of soil creep and associated mass movement. Data are also given on the relative reliability of ERTS and Skylab imagery and conventional photography in identifying avalanche paths and run out zones.

Ives, J. D.↗
NASA NTRS1975

Investigation of field induced trapping on floating gates

The development of a technology for building electrically alterable read only memories (EAROMs) or reprogrammable read only memories (RPROMs) using a single level metal gate p channel MOS process with all conventional processing steps is outlined. Nonvolatile storage of data is achieved by the use of charged floating gate electrodes. The floating gates are charged by avalanche injection of hot electrodes through gate oxide, and discharged by avalanche injection of hot holes through gate oxide. Three extra diffusion and patterning steps are all that is required to convert a standard p channel MOS process into a nonvolatile memory process. For identification, this nonvolatile memory technology was given the descriptive acronym DIFMOS which stands for Dual Injector, Floating gate MOS.

Gosney, W. M.↗
NASA NTRS1978

The 1.06 optical receiver

High performance 1.06 micron m avalanche photodetectors (APDs), fabricated in the GaAlSb system, have high quantum efficiency (90 percent), high speed (risetime less than 60 ps) and low leakage currents (less than 50 na). The dark current represents more than an order of magnitude reduction compared to previously reported results. The high speed avalanche gain of these devices is between 20 and 50. The area uniformity is better than + or - 10 percent. GaAlAs APDs at 0.53 micron m have even faster speed, lower dark currents, and high speed gains of 100 to 200. Optical rangefinders based on measured APD performance parameters have far superior performance when compared to even ideal photomultiplier tubes in either a one color or two color rangefinder system. For a one color system, f factor of two lower time jitter can be achieved with identical transmitted power. The superiority of the APD based two color receiver is significant and exists in the entire range of desired time jitters (less than 100 ps) and received power levels.

Tomasetta, L. R.↗
NASA NTRS1988

Solid-State Single-Photon Counter

Avalanche photodiode used to detect single photons if cooled to optimum temperature and overbiased beyond breakdown voltage. Offers two to three times sensitvity of photomultiplier tubes commonly used for photon detection. When cooled to reduce number of thermal carriers, avalanche photodiode reverse-biased beyond normal breakdown voltage to give it extremely-high internal gain of 10 to seventh power to 10 to eigth power. Advantages of solid-state devices to applications requiring low-level light detection, optical communication, astronomy, remote sensing, optical metrology, and optical signal processing.

Robinson, D. L.↗
NASA NTRS1989

Optical Communication with Semiconductor Laser Diode

Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

Davidson, Frederic↗
NASA NTRS1991

High-voltage 6H-SiC p-n junction diodes

A chemical vapor deposition (CVD) process has been used to produce device structures of n- and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.

Matus, L. G.↗
NASA NTRS1992

Post-flight characterization of optical system samples, thermal control samples, and detectors from LDEF experiment M0003, sub-experiments 6 and 13

Flight samples and control samples of optical and thermal control coatings have been measured for hemispheric reflectance and transmission. Data was recorded for wavelengths from .25 microns to 18 microns. The samples were exposed directly to the orbital environment, but were on the trailing edge of the LDEF satellite. Preliminary analysis shows no significant change in the reflectance or transmission values of most of the samples. Post-flight tests of avalanche photodiodes have yielded results. The tests consist of measuring the following detector parameters: breakdown voltage for set values of reverse current, responsivity vs. bias voltage, noise equivalent power, and uniformity of photoresponse. The avalanche photodiodes were mounted on the leading edge of the LDEF satellite, but were shielded from the outside by a silver-coated teflon foil cover. Small puncture holes are present in the foil, probably caused by impact of particles in orbit. For most of the detectors, there has been no significant change in noise or response.

Randall R Hodgson↗