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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Gallium Oxide Techno-Economic Analysis for the Wide Bandgap Semiconductor Market

More than 30% of electrical energy passes through power electronics today with speculation that in the next decade this could grow to 80%. The wide bandgap semiconductor market is already approaching $1 billon USD in 2019 and is projected to be almost $7 billion USD in 2028. Even with its high cost, SiC, is starting to dislodge the incumbent Si technology in some applications, such as hybrid and electric vehicles, due to smaller size, and higher efficiency. We review and report the IHS Markit’s market predictions for wide bandgap semiconductor technologies, and highlight the technoeconomic analysis results for the manufacturing cost of Ga2O3 wafers. Specifically, we focus on the potential for Ga2O3 to be more economically advantageous than SiC using current manufacturing methods and then identify opportunities where research can further reduce the volume cost of Ga2O3 wafers.

28 EE - Advanced Manufacturing Office (EE-5A)↗
DOE OSTI2020

Combinatorial investigation of structural and optical properties of cation-disordered ZnGeN 2

Cation-disordered ZnGeN 2 shows promise for application as a blue-green emitter in light-emitting devices, but more foundational work is necessary to understand structure–property relationships. In this work, we present a combinatorial exploration of the experimental phase space of wurtzite (cation-disordered) ZnGeN 2 using high-throughput co-sputtering. Structure, morphology and optical properties are explored as a function of cation composition and synthesis temperature. ZnGeN 2 is found to crystallize in the wurtzite structure ranging from Zn-rich to Ge-rich compositions. X-ray diffraction refinements reveal a continuous shift in cell volume with off-stoichiometry, indicating alloy-like structural behavior. Furthermore, the optical absorption of all films examined is lower in energy than the value predicted for cation-ordered ZnGeN 2 , suggesting that cation disorder is decreasing the bandgap. Additionally, the absorption threshold shifts continuously to higher energy for Ge-rich samples, consistent with bandgap shifts due to alloy-like structural behavior. Defect formation energy diagrams are calculated to help guide understanding of off-stoichiometry from a defect complex perspective. This work paves the way toward use of ZnGeN 2 as a bandgap-tunable optoelectronic semiconductor.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Range-separated hybrid functionals for mixed dimensional heterojunctions: Application to phthalocyanines/MoS 2

We analyze the electronic structure and level alignment of transition-metal phthalocyanine (MPc) molecules adsorbed on two-dimensional MoS 2 employing density functional theory (DFT) calculations. We develop a procedure for multi-objective optimal tuning of parameters of range-separated hybrid functionals in these mixed-dimensional systems. Using this procedure, which leads to the asymptotically-correct exchange-correlation potential between molecule and two-dimensional material, we obtain electronic structures consistent with experimental photoemission results for both energy level alignment and electronic bandgaps, representing a significant advance compared to standard DFT methods. We elucidate the MoS 2 valence resonance with the transition-metal phthalocyanine non-frontier 3d orbitals and its dependence on the transition metal atomic number. Based on our calculations, we derive parameter-free, model self-energy corrections that quantitatively accounts for the effects of the heterogeneous dielectric environment on the electronic structure of these mixed-dimensional heterojunctions.

2D materials↗
DOE OSTI2023

Y-Type Non-Fullerene Acceptors with Outer Branched Side Chains and Inner Cyclohexane Side Chains for 19.36% Efficiency Polymer Solar Cells

Raising the lowest unoccupied molecular orbital (LUMO) energy level of Y-type non-fullerene acceptors can increase the open-circuit voltage (V oc ) and thus the photovoltaic performance of the current top performing polymer solar cells (PSCs). One of the viable routes is demonstrated by the successful Y6 derivative of L8-BO with the branched alkyl chains at the outer side. This will introduce steric hindrance and reduce intermolecular aggregation, thus open up the bandgap and raise the LUMO energy level. To take further advantages of the steric hindrance influence on optoelectronic properties of Y6 derivatives, two Y-type non-fullerene acceptors of BTP-Cy-4F and BTP-Cy-4Cl are designed and synthesized by adopting outer branched side chains and inner cyclohexane side chains. An outstanding V oc of 0.937 V is achieved in the D18:BTP-Cy-4F binary blend devices along with a power conversion efficiency (PCE) of 18.52%. With the addition of BTP-eC9 to extend the absorption spectral coverage, a remarkable PCE of 19.36% is realized finally in the related ternary blend devices, which is one of the highest values for single-junction PSCs at present. The results illustrate the great potential of cyclohexane side chains in constructing high-performance non-fullerene acceptors and their PSCs.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Efficient Energy Funneling in Quasi‐2D Perovskites: From Light Emission to Lasing

Abstract Quasi‐2D Ruddlesden–Popper halide perovskites with a large exciton binding energy, self‐assembled quantum wells, and high quantum yield draw attention for optoelectronic device applications. Thin films of these quasi‐2D perovskites consist of a mixture of domains having different dimensionality, allowing energy funneling from lower‐dimensional nanosheets (high‐bandgap domains) to 3D nanocrystals (low‐bandgap domains). High‐quality quasi‐2D perovskite (PEA) 2 (FA) 3 Pb 4 Br 13 films are fabricated by solution engineering. Grazing‐incidence wide‐angle X‐ray scattering measurements are conducted to study the crystal orientation, and transient absorption spectroscopy measurements are conducted to study the charge‐carrier dynamics. These data show that highly oriented 2D crystal films have a faster energy transfer from the high‐bandgap domains to the low‐bandgap domains (<0.5 ps) compared to the randomly oriented films. High‐performance light‐emitting diodes can be realized with these highly oriented 2D films. Finally, amplified spontaneous emission with a low threshold 4.16 µJ cm −2 is achieved and distributed feedback lasers are also demonstrated. These results show that it is important to control the morphology of the quasi‐2D films to achieve efficient energy transfer, which is a critical requirement for light‐emitting devices.

Lei, Lei↗
NASA NTRS2003

Advanced Rainbow Solar Photovoltaic Arrays

Photovoltaic arrays of the rainbow type, equipped with light-concentrator and spectral-beam-splitter optics, have been investigated in a continuing effort to develop lightweight, high-efficiency solar electric power sources. This investigation has contributed to a revival of the concept of the rainbow photovoltaic array, which originated in the 1950s but proved unrealistic at that time because the selection of solar photovoltaic cells was too limited. Advances in the art of photovoltaic cells since that time have rendered the concept more realistic, thereby prompting the present development effort. A rainbow photovoltaic array comprises side-by-side strings of series-connected photovoltaic cells. The cells in each string have the same bandgap, which differs from the bandgaps of the other strings. Hence, each string operates most efficiently in a unique wavelength band determined by its bandgap. To obtain maximum energy-conversion efficiency and to minimize the size and weight of the array for a given sunlight input aperture, the sunlight incident on the aperture is concentrated, then spectrally dispersed onto the photovoltaic array plane, whereon each string of cells is positioned to intercept the light in its wavelength band of most efficient operation. The number of cells in each string is chosen so that the output potentials of all the strings are the same; this makes it possible to connect the strings together in parallel to maximize the output current of the array. According to the original rainbow photovoltaic concept, the concentrated sunlight was to be split into multiple beams by use of an array of dichroic filters designed so that each beam would contain light in one of the desired wavelength bands. The concept has since been modified to provide for dispersion of the spectrum by use of adjacent prisms. A proposal for an advanced version calls for a unitary concentrator/ spectral-beam-splitter optic in the form of a parabolic curved Fresnel-like prism array with panels of photovoltaic cells on two sides (see figure). The surface supporting the solar cells can be adjusted in length or angle to accommodate the incident spectral pattern. An unoptimized prototype assembly containing ten adjacent prisms and three photovoltaic cells with different bandgaps (InGaP2, GaAs, and InGaAs) was constructed to demonstrate feasibility. The actual array will consist of a lightweight thin-film silicon layer of prisms curved into a parabolic shape. In an initial test under illumination of 1 sun at zero airmass, the energy-conversion efficiency of the assembly was found to be 20 percent. Further analysis of the data from this test led to a projected energy conversion efficiency as high as 41 percent for an array of 6 cells or strings (GaP, AlGaAs, InGaP2, GaAs, and two different InGaAs cells or strings).

Mardesich, Nick↗
DOE OSTI2024

Synthesis of 2D layered transition metal (Ni, Co) hydroxides via edge-on condensation

Abstract Layered transition metal hydroxides (LTMHs) with transition metal centers sandwiched between layers of coordinating hydroxide anions have attracted considerable interest for their potential in developing clean energy sources and storage technologies. However, two-dimensional (2D) LTMHs remain largely understudied in terms of physical properties and applications in electronic devices. Here, for the first time we report > 20 μm α-Ni(OH) 2 2D crystals, synthesized from hydrothermal reaction. And an edge-on condensation mechanism assisted with the crystal field geometry is proposed to understand the 2D intra-planar growth of the crystals, which is also testified through series of systematic comparative studies. We also report the successful synthesis of 2D Co(OH) 2 crystals (> 40 μm) with more irregular shape due to the slightly distorted octahedral geometry of the crystal field. Moreover, the detailed structural characterization of synthesized α-Ni(OH) 2 are performed. The optical band gap energy is extrapolated as 2.54 eV from optical absorption measurements and the electronic bandgap is measured as 2.52 eV from reflected electrons energy loss spectroscopy (REELS). We further demonstrate its potential as a wide bandgap (WBG) semiconductor for high voltage operation in 2D electronics with a high breakdown strength, 4.77 MV/cm with 4.9 nm thickness. The successful realization of the 2D LTMHs opens the door for future exploration of more fundamental physical properties and device applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

T-Type Modular DC Circuit Breaker (T-Breaker) for Future DC Networks

The developed T-Type Modular DC Circuit Breaker (T-Breaker) technology offers an all-in-one solution to challenges in DC networks. This includes swift fault detection and protection, power transient stability, and power quality improvement, achieved through the utilization of wide bandgap (WBG) power semiconductors and energy storage devices. The T-Breaker not only facilitates rapid fault current detection and interruption but also implements fault current limiting through active insertion of storage devices or by operating WBG devices in the saturation region. Additionally, with the assistance of energy storage devices, potential overvoltage issues on power devices induced by control signal misalignment can be mitigated. The T-Breaker can be regulated to perform shunt current injection/absorption using the vertical arm and series voltage insertion via the horizontal arm, thereby enhancing DC system stability during voltage or load power fluctuation transients. The OSU team and Raytheon team actively worked together on designing, fabricating, assembling, and testing of two T-Breaker prototypes. The first prototype is rated at 1 kV, 500 A with half-bridge (unipolar) structure to validate the T-Breaker concept. The second prototype is rated at 20 kV, 50 A with full-bridge (bipolar) topology which can reach an efficiency of 99.977%, realize a power density of 60.2 MW/m3, and eliminate the 500-A fault current with a fault response time of around 20 µs. The prototypes show great feasibility of adopting this technology in multiple applications including electrified aircraft, super charging stations, data centers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Interfacial Engineering Using Covalent Organic Frameworks in Polymer Composites for High‐Temperature Electrostatic Energy Storage

Abstract The use of inorganic nanofillers has been an effective method to improve high‐temperature capacitive performance of dielectric polymers, though there are unmet challenges such as undesirable organic–inorganic compatibility, and low efficiencies and energy densities. Herein, a surface functionalization strategy using covalent organic frameworks (COFs) is employed to address such challenges in realizing high‐performing polymer composites. Specifically, core–shell structured nanoparticles, where ZrO 2 nanoparticles act as the core and a COF material forms the shell, are constructed and composited with the polyetherimide (PEI) matrix. The design leverages the high electron affinity ( E A ) of the outer COF shell to create energy traps, thereby capturing free charges and limiting electrical conduction. Concurrently, the low E A and wide bandgap of the ZrO 2 core introduce energy barriers to impede charge injection and migration. This orchestrated “energy level cascade” results in a marked reduction of leakage current and energy loss. The resulting polymer composite showcases an impressive discharged energy density of 6.21 J cm −3 at an efficiency above 90%, with a maximum discharged energy density reaching 7.43 J cm −3 at 150 °C. These performance metrics position the PEI/ZrO 2 @COF polymer composite to surpass or be on par with state‐of‐the‐art high‐temperature PEI composites and other advanced polymer dielectrics.

Xie, Zongliang↗
DOE OSTI2023

Molecular Structure and Conformational Design of Donor‐Acceptor Conjugated Polymers to Enable Predictable Optoelectronic Property

Abstract Tuning the optoelectronic properties of donor‐acceptor conjugated polymers (D‐A CPs) is of great importance in designing various organic optoelectronic devices. However, there remains a critical challenge in precise control of bandgap through synthetic approach, since the chain conformation also affects molecular orbital energy levels. Here, D‐A CPs with different acceptor units are explored that show an opposite trend in energy band gaps with the increasing length of oligothiophene donor units. By investigating their chain conformation and molecular orbital energy, it is found that the molecular orbital energy alignment between donor and acceptor units plays a crucial role in dictating the final optical bandgap of D‐A CPs. For polymers with staggered orbital energy alignment, the higher HOMO with increasing oligothiophene length leads to a narrowing of the optical bandgap despite decreased chain rigidity. On the other hand, for polymers with sandwiched orbital energy alignment, the increased band gap with increasing oligothiophene length originates from the reduction of bandwidth due to more localized charge density distribution. Thus, this work provides a molecular understanding of the role of backbone building blocks on the chain conformation and bandgaps of D‐A CPs for organic optoelectronic devices through the conformation design and segment orbital energy alignment.

Cao, Zhiqiang↗
DOE OSTI2022

2D Oxides Realized via Confinement Heteroepitaxy

Novel confinement techniques facilitate the formation of non-layered 2D materials. Here it is demonstrated that the formation and properties of 2D oxides (GaO x , InO x , SnO x ) at the epitaxial graphene (EG)/silicon carbide (SiC) interface is dependent on the EG buffer layer properties prior to element intercalation. Using 2D Ga, it is demonstrated that defects in the EG buffer layer lead to Ga transforming to GaO x with non-periodic oxygen in a crystalline Ga matrix via air oxidation at room temperature. However, crystalline monolayer GaO 2 and bilayer Ga 2 O 3 with ferroelectric wurtzite structure(FE-WZ') can then be formed via subsequent high-temperature O 2 annealing. Furthermore, the graphene/X/SiC (X = 2D Ga or Ga 2 O 3 ) junction is tunable from Ohmic to a Schottky or tunnel barrier depending on the interface species. Finally, using vertical transport measurements and electron energy loss spectroscopy analysis, the bandgap of 2D gallium oxide is identified as 6.6 ± 0.6 eV, significantly larger than that of bulk β-Ga 2 O 3 (≈4.8 eV), suggesting strong quantum confinement effects at the 2D limit. Furthermore, the study presented here is foundational for development of atomic-scale, vertical 2D/3D heterostructure for applications requiring short transit times, such as GHz and THz devices.

2D gallium oxides↗
DOE OSTI2022

Environmental application of chlorine-doped graphitic carbon nitride: Continuous solar-driven photocatalytic production of hydrogen peroxide

Solar-driven photocatalytic generation of H 2 O 2 over metal-free catalysts is a sustainable approach for value-added chemical production. Here, we synthesized chlorine-doped graphitic carbon nitride (Cl-doped g-C 3 N 4 ) through a solvothermal method to effectively produce H 2 O 2 with a rate of 1.19 ± 0.06 µM min –1 under visible light irradiation, which was improved by 104 times compared to pristine g-C 3 N 4 . Continuous net production of H 2 O 2 was realized at a rate of 2.78 ± 0.10 µM min –1 up to 54 h with isopropanol as the hole scavenger, whereas H 2 O 2 production was only sustained for ~ 6 h without scavengers. Both molecular simulations and advanced spectroscopic characterizations elucidated that the Cl dopant increased the charge transfer rate, decreased the bandgap, and reduced the activation energy of the rate-limiting step of O 2 reduction, all of which favored H 2 O 2 production. Furthermore, this work implemented a novel metal-free photocatalyst for sustainable H 2 O 2 production and elucidated the mechanism for promoting H 2 O 2 production that can guide future photoreactive nanomaterial design.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Thallium-based scintillators for high-resolution gamma-ray spectroscopy: Ce 3+ - doped Tl 2 LaCl 5 and Tl 2 LaBr 5

In this paper we report on the crystallographic and scintillation properties of Tl 2 LaCl 5 :Ce 3 + and Tl 2 LaBr 5 :Ce 3 + , two novel thallium-containing high-resolution scintillators for gamma-ray spectroscopy. Crystals of Tl 2 LaCl 5 :Ce 3 + and Tl 2 LaBr 5 :Ce 3 + were grown by the Vertical Bridgman method up to 1-inch diameter and 1-inch long. Single crystals of Tl 2 LaCl 5 :Ce 3 + and Tl 2 LaBr 5 :Ce 3 + belong to the orthorhombic system with space group 62 and have a density of 5.16 and 5.98 g/cm 3 , respectively. The scintillators show high light yields of up to 68,000 photons/MeV, excellent gamma-ray energy resolution of ≤ 3% at 662 keV, a fast scintillation decay, and a proportional response over a wide range of energies from 32 keV up to 1275 keV. Density Functional Theory calculations show that the Ce 3 + energy levels are inside the bandgap despite the smaller bandgap of Tl 2 LaCl 5 and Tl 2 LaBr 5 compared to K 2 LaCl 5 and K 2 LaBr 5 . Finally, a systematic Ce 3 + concentration study was performed for Tl 2 LaCl 5 :Ce 3 + and trends observed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Charge Separation in Monolayer WSe 2 by Strain Engineering: Implications for Strain-Induced Diode Action

Strain-engineering band structure in transition-metal dichalcogenides (TMDC) is a promising avenue toward capabilities in optoelectronics. For example, controlling the flow of optically generated quasiparticles can be achieved by a localized strain field which reduces the bandgap and generates an energy-band gradient that funnels neutral excitons to the strain apex. It would be even more advantageous to mimic a diode’s internal field, where both conduction and valence bands bend in the same direction, to separate electrons and holes. This can be achieved if the strain in the TMDC layer lowers both the conduction band minimum as well as the valence band maximum during strain-induced band narrowing. Here, we have used density functional theory (DFT) calculations of monolayer WSe 2 electronic structure under biaxial strain to show that WSe 2 has this property. In this work, to test the band bending experimentally, we combined localized strain with electrostatic doping to follow photoluminescence from excitons and positive or negative trions. In unstrained WSe 2 , both positive and negative trion emissions dominate over excitons away from charge neutrality. In contrast, for strained areas, negative trions accumulate, while positive trion emission is near zero away from charge neutrality, indicating a lack of holes. Hence, strain bends both conduction and valence bands down, similarly to the band bending in a PN-diode depletion region, providing an opportunity to separate electrons and holes via localized strain.

2D materials↗
DOE OSTI2021

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) were fabricated on Si substrates with a 10 nm boron nitride (BN) layer as a gate dielectric deposited by electron cyclotron resonance microwave plasma chemical vapor deposition. The material characterization of the BN/GaN interface was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy. The BN bandgap from the B1s XPS energy loss is ~5 eV consistent with sp2 bonding. The MISHEMTs exhibit a low off-state current of 1 × 10 –8 mA/mm, a high on/off current ratio of 10 9 , a threshold voltage of –2.76 V, a maximum transconductance of 32 mS/mm at a gate voltage of –2.1 V and a drain voltage of 1 V, a subthreshold swing of 69.1 mV/dec, and an on-resistance of 12.75 Ω·mm. The interface state density (D it ) is estimated to be less than 8.49 × 10 11 cm –2 eV –1 . Gate leakage current mechanisms were investigated by temperature-dependent current–voltage measurements from 300 K to 500 K. The maximum breakdown electric field is no less than 8.4 MV/cm. Poole–Frenkel emission and Fowler–Nordheim tunneling are indicated as the dominant mechanisms of the gate leakage through the BN gate dielectric at low and high electric fields, respectively.

36 MATERIALS SCIENCE↗
NASA NTRS1988

Optoelectronic gain control of a microwave single stage GaAs MESFET amplifier

Gain control of a single stage GaAs MESFET amplifier is demonstrated by the use of optical illumination of photon energy greater than the GaAs bandgap. The optical illumination is supplied by a semiconductor laser diode and is coupled to the Schottky gate of the MESFET by an optical fiber. The increase in gain is observed to be as much as 5.15 dB when the MESFET is biased close to pinchoff, that is, V(sub gs) equals -1.5 V and with optical illumination of 1.5 mW. The computed maximum available gain (MAG) and current gain (bar h sub 21 bar) from the de-embedded s-parameters show that MAG is unaffected by optical illumination, however, bar h(sub 21)bar increases by more than 2 dB under optical illumination of 1.5 mW. The maximum frequency of oscillation (F sub max) and the unity current gain cut-off frequency (F sub t) obtained by extrapolating the MAG and bar h(sub 21)bar curves, respectively, show that the F(sub max) is insensitive to optical illumination but F(sub t) increases by 5 GHz.

Simons, Rainee N.↗
NASA NTRS2002

Many-body Effects in a Laterally Inhomogeneous Semiconductor Quantum Well

Many body effects on conduction and diffusion of electrons and holes in a semiconductor quantum well are studied using a microscopic theory. The roles played by the screened Hartree-Fock (SHE) terms and the scattering terms are examined. It is found that the electron and hole conductivities depend only on the scattering terms, while the two-component electron-hole diffusion coefficients depend on both the SHE part and the scattering part. We show that, in the limit of the ambipolax diffusion approximation, however, the diffusion coefficients for carrier density and temperature are independent of electron-hole scattering. In particular, we found that the SHE terms lead to a reduction of density-diffusion coefficients and an increase in temperature-diffusion coefficients. Such a reduction or increase is explained in terms of a density-and temperature dependent energy landscape created by the bandgap renormalization.

Ning, Cun-Zheng↗
DOE OSTI2022

Bifacial all-perovskite tandem solar cells

The efficiency of all-perovskite tandem devices falls far below theoretical efficiency limits, mainly because a widening bandgap fails to increase open-circuit voltage. We report on a bifacial all-perovskite tandem structures with an equivalent efficiency of 29.3% under back-to-front irradiance ratio of 30. This increases energy yield and reduces the required bandgap of a wide-bandgap cell. Open-circuit voltage deficit is therefore minimized, although its performance under only front irradiance is not ideal. The bifacial device needs a sputtered rear transparent electrode, which could reduce photon path length and deteriorate stability of Pb-Sn perovskites. Embedding a light-scattering micrometer-sized particle layer into perovskite to trap light, effectively increases absorptance by 5 to 15% in the infrared region. Using a nonacidic hole transport layer markedly stabilizes the hole-extraction interface by avoiding proton-accelerated formation of iodine. These two strategies together increase efficiency of semitransparent Pb-Sn cells from 15.6 to 19.4%, enabling fabrication of efficient bifacial all-perovskite tandem devices.

14 SOLAR ENERGY↗