Tuning Mechanism through Buffer Dependence of Hydrogen Evolution Catalyzed by a Cobalt Mini-enzyme
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We present the discovery of Mo 4 FeGa 17.25–x Ge x (x ∼ 2.1(4), based on determination of Ge content), a complex gallide featuring a variety of point substitution phenomena. Its crystal structure is derived from the Ti 2 Ni type, in which a diamond network of face-sharing octahedra is interpenetrated by a second diamond network of vertex-sharing stella quadrangula. However, while in the ideal Ti 2 Ni type these two frameworks run uninterrupted through the crystal, Mo 4 FeGa 17.25–x Ge x shows three variations. First, the inner tetrahedron of every other stella quadrangula is replaced with a main group atom, creating tetrahedra reminiscent of the Zintl phase NaTl. Next, a selection of Ga 6 octahedra are filled with Fe atoms, in a manner analogous to the stuffed AuCu 3 -type phases. Finally, the refined crystal structure shows that in each unit cell a single Ga2 atom in the octahedral network is substituted with a dumbbell of Ga/Ge atoms. Electronic structure calculations on ordered models of Mo 4 FeGa 17.25–x Ge x reveal a narrow band near the Fermi energy, which is explained in terms of the 18-n and octet bonding schemes using reversed approximation Molecular Orbital analysis. A DFT-chemical pressure analysis connects the tetrahedron/atom and atom/dumbbell substitutions to the relief of atomic packing tensions and highlights soft atomic motions within the octahedral framework and driving forces for atom/dumbbell substitution. The combination of soft vibrational modes, disorder, and a narrow band gap could make this phase of interest for potential thermoelectric properties.
Bicarbonate electrolytes are used in a range of chemical processes; however, resolved simulation of these electrolytes is difficult, as disparate reaction time scales lead to numerical stiffness and the formation of fine boundary layers. Based on several physically motivated approximations, we reduce the full set of chemical reactions within a bicarbonate electrolyte to a simpler subset, eliminating the numerical stiffness. We supported this simplification via a two-variable singular perturbation expansion and demonstrated that under neutral conditions (6 < pH < 10) typically found within a fluid-fed CO 2 electrolyzer, the simplifications lead to negligible error. Here, we also discuss two alternative simplifications, one valid at high pH and another valid at arbitrary pH. These simplifications reduce the condition number of the matrices resulting from spatiotemporal discretization by up to 10 orders of magnitude and enable three-dimensional (3D) simulation of CO 2 electrolyzers containing carbonate solutions.
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In this study, we demonstrate a quasi van der Waals epitaxy approach to prepare single crystalline Ru ultrathin film on large scale, monolayer graphene. Physical and epitaxial properties of bulk, near surface and surface of ultrathin Ru films were comprehensively studied using various structural, morphological, compositional, and electrical characterization techniques. Here, we confirm that Ru can epitaxially grow on single, monolayer graphene using magnetron sputtering at elevated temperature of 600 °C. The epitaxial Ru films with film thickness ranging from 94.2 nm down to 3.9 nm show the (0001) out-of-plane orientation. The epitaxial relationships between Ru and graphene are out-of-plane Ru(0001) || graphene(0001) and in-plane Ru[$11\bar20$] || graphene[$11\bar20$]. All the Ru films show smooth surfaces with root-mean-square roughness less than 0.8 nm and have negligible oxide layer on the surfaces. The Ru films on graphene demonstrate significantly reduced electrical resistivity comparing to their counterpart grown on bare SiO 2 , which show polycrystalline nature. For 7.1 to 3.9 nm film thicknesses, the resistivity of Ru on graphene shows 38 to 45% resistivity decrease from that of Ru film on bare SiO 2 without graphene. Our observations suggest the existence of the above-classical van der Waals interaction between Ru and graphene. On the other hand, graphene is capable of effectively blocking the inter-diffusion/interaction between Ru and SiO 2 during a 1000 °C annealing process.
Water availability governs ecosystem productivity, yet estimates of vegetation sensitivity to water can differ greatly depending on whether the sensitivity is examined spatially or temporally. In particular, the spatial sensitivity is often reported to be much stronger than temporal sensitivities, leading to highly uncertain projections of ecosystem responses to future climate change when using space-for-time substitution. The large difference between spatial and temporal sensitivities remains unexplained. Prior research, however, primarily relied on precipitation as the water availability proxy, whereas vegetation responds to soil moisture. Here, we combined satellite estimates of vegetation productivity with soil moisture data across water-limited ecosystems of the continental United States (CONUS) to identify a convergent sensitivity of productivity to water availability. Using precipitation, we show that temporal sensitivity is 66% lower than spatial sensitivity overall. Our analysis identified the cause of the difference to be primarily driven by the seasonal variability of water availability, rooting depth, and soil properties. When using soil moisture instead of precipitation, we observed widespread convergence in the spatial and temporal sensitivities—that is, the two sensitivities became much more similar in magnitude across all water-limited ecosystems within CONUS. These results show that overlooking soil hydrology can inflate perceived discrepancies between spatial and temporal vegetation sensitivities, leading to biased projections of ecosystem dynamics under future hydro-climatic change.
More extreme and prolonged floods and droughts, commonly attributed to global warming, are affecting the livelihood of major sectors of the world’s population in many basins worldwide. While these events could introduce devastating socioeconomic impacts, highly engineered systems are better prepared for modulating these extreme climatic variabilities. Herein, we provide methodologies to assess the effectiveness of reservoirs in managing extreme floods and droughts and modulating their impacts in data-scarce river basins. Our analysis of multiple satellite missions and global land surface models over the Tigris-Euphrates Watershed (TEW; 30 dams; storage capacity: 250 km 3 ), showed a prolonged (2007–2018) and intense drought (Average Annual Precipitation [AAP]: < 400 km 3 ) with no parallels in the past 100 years (AAP during 1920–2020: 538 km 3 ) followed by 1-in-100-year extensive precipitation event (726 km 3 ) and an impressive recovery (113 ± 11 km 3 ) in 2019 amounting to 50% of losses endured during drought years. Dam reservoirs captured water equivalent to 40% of those losses in that year. Additional studies are required to investigate whether similar highly engineered watersheds with multi-year, high storage capacity can potentially modulate the impact of projected global warming-related increases in the frequency and intensity of extreme rainfall and drought events in the twenty-first century.
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To avoid access to PFS, dedicated BB allocation is preferred despite of severe BB underutilization. Recently, new all-flash HPC storage systems with integrated BB and PFS are proposed, which speed up access to PFS. For this reason, we adopt BB over-subscription allocation method by allowing HPC applications to use BB only for I/O phase for improving BB utilization. Unfortunately, BB over-subscription aggravates I/O interference and demotion overhead from BB to PFS, resulting in degraded performance. To minimize the performance degradation, we develop an I/O scheduler to prevent I/O congestion and a new transparent data management system based on checkpoint/restart characteristics of HPC applications. With the proposed approach, not only the BB utilization can be improved, but also high performance of applications is achieved. In our experiments, we find that BB utilization is improved at least 2.2x, and more stable and higher checkpoint performance is guaranteed compared to other approaches. Besides, we achieve up to 96.4% hit ratio of restart requests on BB and up to 3.1x higher restart performance than others.
V-groove Si substrates offer a promising route for the direct growth of III-V solar cells on low-cost, photovoltaic-grade Si. In this work, we develop a method for coalescing GaP nucleated on V-groove substrates into thin films suitable for the growth of III-V solar cells. We demonstrate the ability to suppress nucleation-related defects by modifying the V-groove substrate to cover the (0 0 1)-oriented Si V-groove tops with SiN x . A threading dislocation density (TDD) of 5 × 10 7 cm -2 was measured with electron channeling contrast imaging. Continuing work will focus on further reducing the TDD and the growth of a GaAs solar cell on a GaP on V-groove Si template.