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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence

350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Highly constrained ferroelectric [BaTiO{sub 3}]{sub (1−x)Λ}/[BaZrO{sub 3}]{sub xΛ} superlattices: X-ray diffraction and Raman spectroscopy

We report an x-ray diffraction (XRD) and a Raman-scattering investigation of ferroelectric/paraelectric superlattices [BaTiO{sub 3}] {sub (1−x)Λ}/[BaZrO{sub 3}]{sub xΛ} for which the composition varied, 0.15 ≤ x ≤ 0.85, while the superlattice (SL) modulation period Λ was kept constant at about 100 Å. The samples were epitaxially grown by pulsed laser deposition on MgO substrates buffered with La{sub 0.5}Sr{sub 0.5}CoO{sub 3}. Based on the XRD analysis and on polarized Raman spectra, we have showed that the large strain in SLs induced ferroelectricity in BaZrO{sub 3} (BZ) for all SLs, a material that is paraelectric in the bulk form at any temperature and in the single film. The induced polar axis in BZ layers is perpendicular to the plane of substrate while BaTiO{sub 3} (BT) layers exhibit in-plane polar orientation. Raman spectroscopy revealed a lattice ordering in SLs due to the misfit strain generated by the large lattice mismatch between the alternating BZ and BT layers. This strain induced a huge upward frequency of the lowest E(1TO) soft mode from 60 cm{sup −1} in the BT single film to 215 cm{sup −1} in the SL with x = 0.85. These results show that in spite of relatively large periodicity of SLs, they are highly constrained and the variation of BZ ratio allowed modifying strains between layers. The temperature dependence of the Raman spectra for BT{sub 0.3Λ}/BZ{sub 0.7Λ} and BT{sub 0.7Λ}/BZ{sub 0.3Λ} samples revealed giant shift of the ferroelectric phase transition. The phase transition temperature was found to be upshifted by about 300 °C with respect to BT single crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Controlled activation of ZnTe:Cu contacted CdTe solar cells using rapid thermal processing

Back contacts can significantly limit CdTe solar cell performance, reducing both open circuit voltage (Voc) and fill factor (FF). Copper is an essential component of effective back contacts, but its presence in the CdTe absorber creates detrimental recombination centers. Rapid thermal processing (RTP) is demonstrated as a highly effective approach for reducing back contact barriers in CdTe solar cells contacted with ZnTe:Cu buffer layers, substantially improving both FF (473%) and V oc (4850 mV). Current density and quantum efficiency remain essentially unchanged, but a five-fold increase in minority carrier lifetime is observed which is attributed to passivation of recombination sites in the back contact region. Quantitative analysis of secondary ion mass spectrometry shows that the majority of Cu segregates to the Au metallization layer and that the ZnTe buffer appears to inhibit the Cu diffusion into CdTe. 3D imaging of the back contact region using atom probe tomography shows that optimized devices are characterized by preferential segregation of copper to both the Au|ZnTe and CdTe|ZnTe interfaces, perhaps in the form of Cu x Te. Finally, with its low thermal budget the RTP process has been successfully applied to multiple device architectures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation

Group IV GeSn quantum material finds application in electronics and silicon-compatible photonics. Synthesizing these materials with low defect density and high carrier lifetime is a potential challenge due to lattice mismatch induced defects and tin segregation at higher growth temperature. Recent advancements in the growth of these GeSn materials on Si, Ge, GaAs, and with substrate orientations, demonstrated different properties using epitaxial and chemical deposition methods. This article addresses the effect of GaAs substrate orientation and misorientation on the materials’ properties and carrier lifetimes in epitaxial Ge 0.94 Sn 0.06 layers. With starting GaAs substrates of (100)/2°, (100)/6°, (110) and (111)A orientations, Ge 0.94 Sn 0.06 epitaxial layers were grown with an intermediate Ge buffer layer by molecular beam epitaxy and analyzed by several analytical tools. X-ray analysis displayed good crystalline quality, and Raman spectroscopy measurements showed blue shifts in phonon wavenumber due to biaxial compressive strain in Ge 0.94 Sn 0.06 epilayers. Cross-sectional transmission electron microscopy analysis confirmed the defect-free heterointerface of Ge 0.94 Sn 0.06 /Ge/GaAs heterostructure. Minority carrier lifetimes of the unintentionally doped n-type Ge 0.94 Sn 0.06 epilayers displayed photoconductive carrier lifetimes of >400 ns on (100)/6°, 319 ns on (100)/2°, and 434 ns on (110) GaAs substrate at 1500 nm excitation wavelength. On the other hand, Ge 0.94 Sn 0.06 layer showed poor carrier lifetime on (111)A GaAs substrate. The observed differences in carrier lifetimes were correlated with the formation energy of the Ge on (100)/6° and (100)/2° GaAs heterointerface using Stillinger–Weber interatomic potential model-based atomistic simulation with different heterointerfacial bonding by Synopsys QuantumATK tool. Total energy computation of 6280-atom Ge/GaAs supercell on (100)/6° leads to lower formation energy than (100)/2°, making it more thermodynamically stable. Hence, the growth of the GeSn/III–V material system using misoriented (100) substrates that are more thermodynamically stable will enhance the performances of optoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Yttria-stabilized zirconia buffered silicon to optimize in-plane electrical conductivity of [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] thin films

The monolithic integration of thermoelectric generators and magnetoresistive functionality on the basis of misfit cobaltate [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] thin films into silicon technology is a prerequisite for their application in miniaturized electric circuits. Here, we report on [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] thin films grown by pulsed laser deposition on (001)-silicon with a thin epitaxial yttria-stabilized zirconia (YSZ) buffer layer. X-ray diffraction and cross-sectional high resolution transmission electron microscopy analysis reveal that high quality c-axis oriented heteroepitaxial [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] films with a 12-fold in-plane rotational symmetry can be grown, which exhibit remarkable lower electrical resistivity compared to those with random in-plane orientation. This result is explained by energetically preferred epitaxial growth directions of the pseudo hexagonal [CoO{sub 2}] sublayer in monoclinic [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] onto the cubic (001)-YSZ surface leading to a highly symmetric in-plane mutual orientation of the charge transporting CoO{sub 2} sublayer domains.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Sensitivity of Riparian Buffer Designs to Climate Change—Nutrient and Sediment Loading to Streams: A Case Study in the Albemarle-Pamlico River Basins (USA) Using HAWQS

Riparian buffer zones (RBZs) provide multiple benefits to watershed ecosystems. We aimed to conduct an extensive sensitivity analysis of the RBZ designs to climate change nutrient and sediment loadings to streams. We designed 135 simulation scenarios starting with the six baselines RBZs (grass, urban, two-zone forest, three-zone forest, wildlife, and naturalized) in three 12-digit Hydrologic Unit Code watersheds within the Albemarle-Pamlico river basin (USA). Using the hydrologic and water quality system (HAWQS), we assessed the sensitivity of the designs to five water quality indicator (WQI) parameters: dissolved oxygen (DO), total phosphorous (TP), total nitrogen (TN), sediment (SD), and biochemical oxygen demand (BD). To understand the climate mitigation potential of RBZs, we identified a subset of future climate change projection models of air temperature and precipitation using EPA’s Locating and Selecting Scenarios Online tool. Analyses revealed optimal RBZ designs for the three watersheds. In terms of watershed ecosystem services sustainability, the optimal Urban RBZ in contemporary climate (1983–2018) reduced SD from 61–96%, TN from 34–55%, TP from 9–48%, and BD from 53–99%, and raised DO from 4–10% with respect to No-RBZ in the three watersheds. The late century’s (2070–2099) extreme mean annual climate changes significantly increased the projected SD and BD; however, the addition of urban RBZs was projected to offset the climate change reducing SD from 28–94% and BD from 69–93% in the watersheds. All other types of RBZs are also projected to fully mitigate the climate change impacts on WQI parameters except three-zone RBZ.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2016

Analysis of characteristics of a diode-pumped rubidium vapour laser using a kinetic algorithm

We consider diode-pumped alkali vapour lasers (DPALs), which make it possible to achieve a high output power. Characteristics of such DPALs strongly depend on the physical properties of buffer gases and on structural parameters of a vapour cell. Special attention is paid to a diode-pumped rubidium vapour laser (DPRVL): We have investigated the effect of different conditions on its characteristics. The results show that the linewidth of the D{sub 2} line of a DPRVL and the fine-structure mixing rate between two excited energy levels, which are two crucial factors in implementing a high-power DPRVL, increase with the pressure of buffer gases and the temperature of the vapour cell. It is demonstrated that the population ratio of two excited energy levels is close to that corresponding to a thermal equilibrium as the pressure of buffer gases and the temperature of the vapour cell become higher. We have found that the optimal values of the methane pressure, the cell temperature and the cell length can be determined through a kinetic analysis. The conclusions can be valuable for designing configurations of an end-pumped DPAL. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1991

Smoothed perturbation analysis algorithms for estimating the derivatives of occupancy-related functions in serial queueing networks

The authors present smoothed perturbation analysis (SPA) estimators for the derivative of a number of occupancy-related functions in serial queuing networks with finite buffer spaces. The functions are the average number of customers at a network as seen by an arrival, the probability that a customer is blocked at a particular queue, and the probability that a customer leaves a queue empty. In all three cases, the variable is a parameter of the distribution of service times at one of the queues. The derivative estimators considered are very simple and flexible, and they easily lend themselves to analysis of unbiasedness. Unlike most of the established SPA estimators, the present ones are not based on the computation of hazard rates.

Wardi, Y.↗
NASA NTRS2002

Real-Time Quantitative Analysis of H2, He, O2, and Ar by Quadrupole Ion Trap Mass Spectrometry

The use of a quadrupole ion trap mass spectrometer for quantitative analysis of hydrogen and helium as well as other permanent gases is demonstrated. The customized instrument utilizes the mass selective instability mode of mass analysis as with commercial instruments; however, this instrument operates at a greater RF trapping frequency and without a buffer gas. With these differences, a useable mass range from 2 to over 50 Da is achieved, as required by NASA for monitoring the Space Shuttle during a launch countdown. The performance of the ion trap is evaluated using part-per-million concentrations of hydrogen, helium, oxygen and argon mixed into a nitrogen gas stream. Relative accuracy and precision when quantitating the four analytes were better than the NASA-required minimum of 10% error and 5% deviation, respectively. Limits of detection were below the NASA requirement of 25-ppm hydrogen and 100-ppm helium; those for oxygen and argon were slightly higher than the requirement. The instrument provided adequate performance at fast data recording rates, demonstrating the utility of an ion trap mass spectrometer as a real-time quantitative monitoring device for permanent gas analysis.

Ottens, Andrew K.↗
DOE OSTI2019

Effects of temperature and pH on the electrochemical behaviour of alloy 600 in simulated pressurized water reactor primary water

The effects of temperature and pH on the electrochemical properties of Alloy 600 were studied in oxygenated borate buffer solutions by the measurements of open circuit potential (OCP), anodic potentiostatic polarization, Mott-Schottky analysis (MSA), and electrochemical impedance spectroscopy (EIS). At each temperature and pH, the stabilized anodic passive current density was independent of the formation potential, and the slope of the M - S plot for the passive film formed at +0.3 V OCP (OCP + 0.3 V) is positive, indicating that the passive films formed on Alloy 600 have n-type semiconductor character. With increasing temperature (in each solution), the OCP and the impedance modulus decreased, while the passive current density and the defect density calculated from MSA increased, indicating a significant reduction in corrosion resistance. With the increase in pH value, the passive current density decreased, the absolute value of impedance increased slightly, revealing a slight increase in corrosion resistance. According to the optimization of Mixed Potential Model (MPM) on the experimentally measured EIS data for Alloy 600 at OCP and +0.3 V OCP , a series of fundamental parameters related to the micro-characteristic of passive film were extracted. In the barrier layer of the passive film, the concentration of cation interstitials is much higher than that of anion vacancies, indicating that the former was a dominant defect. With increasing temperature, the linear increase in the defect density and film thickness resulted in a linear increase of the anodic current density. However, with increasing pH, the decrease of defect density and the slight increase of film thickness caused a linear reduction in anodic current density. Elevated temperature has a more significant deterioration effect on the corrosion resistance of Alloy 600 than the increased pH value. Additionally, all the kinetics parameters describing the generation of cation interstitials and oxygen vacancies at the substrate/film were obtained.

36 MATERIALS SCIENCE↗
DOE OSTI2015

γ-Fe 2 O 3 Nanocrystalline Microspheres with Hybrid Behavior of Battery-Supercapacitor for Superior Lithium Storage

Maghemite (γ-Fe2O3) nanocrystalline microspheres (MNMs) self-assembled with 52 nm nanocrystals bridged with FeOOH around grain boundaries were formed by solvothermal reaction and thermal oxidation. The unique architecture endows the MNMs with the lithium storage behavior of a hybrid battery-supercapacitor electrode: initial charge capacity of 1060 mAh g–1 at the 100 mA g–1 rate, stable cyclic capacity of 1077.9 mAh g–1 at the same rate after 140 cycles, and rate capability of 538.8 mAh g–1 at 2400 mA g–1. This outstanding performance was attributed to the nanocrystal superiority, which shortens the Li+ diffusion paths. The mechanism of this hybrid anode material was investigated with experimental measurements and structural analysis. The results indicate that at the first discharge, the MNM nanocrystal microsphere, whose structure can buffer the volume change that occurs during lithiation/delithiation, goes through four stages: Li+ insertion in cation vacancies, spinel-to-rocksalt transformation, Li+ intercalation of Li1.75+xFe2O3 nanocrystals, and interfacial Li storage around nanocrystal boundaries. Only the latter two stages were reversible at and after the second charging/discharging cycle, exhibiting the hybrid behavior of a battery-supercapacitor with superior lithium storage.

ferric oxide↗
DOE OSTI2015

Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy

Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly contrasted SCM signals were obtained between the ZnO layers with different Ga densities. Through comparison with dopant depth profiles from secondary ion mass spectroscopy measurement, it is demonstrated that SCM is able to distinguish carrier concentrations at all levels of the samples (from 2 × 10{sup 17 }cm{sup −3} to 3 × 10{sup 20 }cm{sup −3}). The good agreement of the results from the two techniques indicates that SCM can be a useful tool for two dimensional carrier profiling at nanoscale for ZnO nanostructure development. As an example, residual carrier concentration inside the non-intentionally doped buffer layer was estimated to be around 2 × 10{sup 16 }cm{sup −3} through calibration analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Annealing induced structural changes in amorphous Co{sub 23}Fe{sub 60}B{sub 17} film on Mo buffer layer

Structural changes occurring in a thin amorphous Co{sub 23}Fe{sub 60}B{sub 17} film sandwiched between two Mo layers, as a function of thermal annealing has been studied. Thermal stability of the Co{sub 23}Fe{sub 60}B{sub 17} film is found to be significantly lower than the bulk ribbons. SIMS measurements show that during crystallization, boron which is expelled out of the crystallites, has a tendency to move towards the surface. No significant diffusion of boron in Mo buffer layer is observed. This result is in contrast with some earlier studies where it was proposed that the role of buffer layer of refractory metal is to absorb boron which is expelled out of the bcc FeCo phase during crystallization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

The structural, morphological, optical, and electrical transport characteristics of a metamorphic, broken-gap InAs/GaSb p-i-n tunnel diode structure, grown by molecular beam epitaxy on GaAs, were demonstrated. Precise shutter sequences were implemented for the strain-balanced InAs/GaSb active layer growth on GaAs, as corroborated by high-resolution X-ray analysis. Cross-sectional transmission electron microscopy and detailed micrograph analysis demonstrated strain relaxation primarily via the formation of 90° Lomer misfit dislocations (MDs) exhibiting a 5.6 nm spacing and intermittent 60° MDs at the GaSb/GaAs heterointerface, which was further supported by a minimal lattice tilt of 180 arc sec observed during X-ray analysis. Selective area diffraction and Fast Fourier Transform patterns confirmed the full relaxation of the GaSb buffer layer and quasi-ideal, strain-balanced InAs/GaSb heteroepitaxy. Temperature-dependent photoluminescence measurements demonstrated the optical band gap of the GaSb layer. Strong optical signal at room temperature from this structure supports a high-quality material synthesis. Current–voltage characteristics of fabricated InAs/GaSb p-i-n tunnel diodes measured at 77 K and 290 K demonstrated two bias-dependent transport mechanisms. The Shockley–Read–Hall generation–recombination mechanism at low bias and band-to-band tunneling transport at high bias confirmed the p-i-n tunnel diode operation. This elucidated the importance of defect control in metamorphic InAs/GaSb tunnel diodes for the implementation of low-voltage and high-performance tunnel field effect transistor applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

DFSynthesizer: Dataflow-based Synthesis of Spiking Neural Networks to Neuromorphic Hardware

Spiking Neural Networks (SNNs) are an emerging computation model that uses event-driven activation and bio-inspired learning algorithms. SNN-based machine learning programs are typically executed on tile-based neuromorphic hardware platforms, where each tile consists of a computation unit called a crossbar, which maps neurons and synapses of the program. However, synthesizing such programs on an off-the-shelf neuromorphic hardware is challenging. This is because of the inherent resource and latency limitations of the hardware, which impact both model performance, e.g., accuracy, and hardware performance, e.g., throughput. We propose DFSynthesizer, an end-to-end framework for synthesizing SNN-based machine learning programs to neuromorphic hardware. The proposed framework works in four steps. First, it analyzes a machine learning program and generates SNN workload using representative data. Second, it partitions the SNN workload and generates clusters that fit on crossbars of the target neuromorphic hardware. Third, it exploits the rich semantics of the Synchronous Dataflow Graph (SDFG) to represent a clustered SNN program, allowing for performance analysis in terms of key hardware constraints such as number of crossbars, dimension of each crossbar, buffer space on tiles, and tile communication bandwidth. Finally, it uses a novel scheduling algorithm to execute clusters on crossbars of the hardware, guaranteeing hardware performance. We evaluate DFSynthesizer with 10 commonly used machine learning programs. Our results demonstrate that DFSynthesizer provides a much tighter performance guarantee compared to current mapping approaches.

Computer Science↗
DOE OSTI2021

Nanosecond Gated CMOS Camera (NSGCC) ICD (Rev. 2.1)

The Ultra-Fast X-ray Imager (UXI) program is an ongoing effort at Sandia National Laboratories to create high speed, multi-frame, time-gated Read Out Integrated Circuits (ROICs), and a corresponding suite of photodetectors to image a wide variety of High Energy Density (HED) physics experiments on both Sandia’s Z-Machine and LLNL’s National Ignition Facility (NIF). Several cameras have been designed over the length of the program; one of the most recent is the Icarus, which is an improvement on past imagers (Furi and Hippogriff). A second sensor that can be connected is the Daedalus sensor. The Icarus is a 1024 × 512-pixel array with either 25 μm or 8 µm spatial resolution containing four frames of storage per pixel and has improved timing generation and distribution components while achieved 2 ns time gating. The Daedalus sensor is also a 1024 x 512-pixel array with 25 µm special resolution containing three frames of storage per pixel and has an increased set of features for a wider variety of applications from interlacing of rows in each frame to configurability of all shutters. See Section 14 for details regarding the Icarus implementation of the firmware and Section 15 for details regarding the Daedalus implementation. Due to the unique test environments UXI sensors are targeted for, full custom hardware was required to physically mount an Icarus or Daedalus sensor, manage its various functions, and read out pixel data for transfer to a host computer. Beyond experimental functionality, the hardware also needed to accommodate sensor characterization requirements. Lawrence Livermore National Laboratory’s ‘Version 4.0 Board’ was the result of these efforts. It mounts all the components required to fully utilize the Icarus and Daedalus sensors including analog to digital converters to convert pixel data and various system voltages to digital form for readout and analysis, DAC channels for remote configuration of critical bias voltages, static random-access memories to buffer pixel data, RS422 and Gigabit Ethernet communications for remote access, and an FPGA to tie these components together. This document describes the FPGA electrical interfaces in detail to allow the reader a greater understanding of the device, and to facilitate implementation of custom software to control and manage it. The Version 4.0 Board is a continuation of the Nano-second Gated CMOS hardware design that retains much of the functionality of the Version 1.0 Board while adding features including a DAC instead of digital potentiometers, as well as sensors for pressure and radiation. The Version 4.0 board is intended for applications requiring tight form-factor enclosures. It is composed of two stacking boards; one holds the FPGA and regulators to power the various components of the board while the other contains the mating connector to the sensor, image-readoff ADCs, the DAC, and other components.

42 ENGINEERING↗
DOE OSTI2025

Real-Time Automated pH Control within Batch Processes Relying on Raman pH Measurement

Nuclear fission is an energy source that can provide consistent power with very low associated carbon emissions. However, management of the used nuclear fuel is an important aspect of the application of nuclear power. Recycling of useful components from used fuel is an attractive option, but this involves chemical processing of the fuel. Possible chemical separation technologies that might be used in this regard are sensitive to solution pH. Raman spectroscopy is a promising technique for monitoring the pH of solutions in real time. Classical pH probes are too fragile to be used in the harsh environments encountered in nuclear fuel processing. Raman probes are robust and can withstand these harsh environments to track pH. Coupled with chemometric analysis, the demonstration of the use of Raman spectroscopy to track and predict the pH in carboxylate-buffered systems is made possible. Utilizing this spectroscopy in conjunction with Programmable Logic Controllers mimics industrial control systems used in many modern industrial settings. This showcases a pragmatic approach toward leveraging Raman spectroscopy and chemometric model outputs as inputs for a real-time control system. The model to predict pH created by chemometrics proved to be successful in tracking pH. The optimal pH for TALSPEAK extraction of lanthanides and actinides from aqueous solution is known to proceed in a narrow pH range of around pH = 2.8 ± 0.1. This study uses Raman optical monitoring and automated control to return and maintain solution pH within this range after acid or base perturbations move the solution pH well outside this region. Root-mean-square errors show that pH changes measured using Raman spectroscopy on the batch process solution are reliably measured and used to automatically correct and maintain solution pH. Measurement of solution pH tracks favorably with electrochemical pH probe comparison measurements. As a result, the ability to showcase Raman spectroscopy paired with chemometrics analysis acts as a durable, better alternative data source compared to traditional pH probes to optimize the separation efficiency in the used nuclear fuel processing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1986

The adsorption and reaction of adenine nucleotides on montmorillonite

The binding of AMP to Zn(2+)-montmorillonite is investigated in the presence of salts and Good's zwitterion buffers, PIPES and MES. The initial concentrations of nucleotide and the percent adsorbtion are used to calculate the adsorption isotherms, and the Langmuir adsorption equation is used for the analysis of data. The adsorption coefficient was found to be three times greater in the presence of 0.2 M PIPES than in its absence. In addition, basal spacings measured by X-ray diffraction were increased by the buffer. These results are interpreted in terms of a model in which the adsorption of AMP is mediated by a Zn(2+) complex of PIPES in different orientations in the interlamellar region of the montmorillonite. Mixed ligand complexes of this type are reminiscent of the complexes observed between metal ions and biological molecules in living systems.

Ferris, James P.↗