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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

The tantalum-cased tantalum capacitor

Tantalum-cased tantalum capacitors were tested with regard to temperature stability, capacitance ratio, surge current capabilities, shock, vibration, and thermal shock. They were found to be superior to the conventional wet slug tantalum capacitor cased in silver, since they are more resistant to sulfuric acid. The tantalum-cased tantalum capacitors are widely accepted for use in critical electronic equipment because of their excellent performance and reliability.

Moynihan, J. D.↗
NASA NTRS1978

Regulated high efficiency, lightweight capacitor-diode multiplier dc to dc converter

A voltage multiplier having a capacitor-diode voltage multiplying network is disclosed which is fed with voltage pulses from a dc source through a first switching means. Pulses of a second polarity are also supplied through a second switching means to the input of the capacitor-diode voltage multiplier from a second dc source whose voltage is adjustable to change the voltage of the pulses of second polarity. The switching means are alternately rendered conducting by signals from a control circuit. The second dc source may be controlled by a voltage comparator which compares the output voltage of the capacitor-diode voltage multiplier to the reference source.

Harrigill, W. T., Jr.↗
NASA NTRS1981

Unstable insulation resistance in ceramic capacitors

The effects of low and varying values of insulation resistance (IR) and their significance in the cause of failure in ceramic capacitors were investigated. Two specific instances involving hardware failure involving ceramic capacitors were examined. It is shown that monolithic, multilayer ceramic capacitors may exhibit low and unstable IR at low voltages, or exhibit no voltage. Other significant results are reported.

Holladay, A. M.↗
NASA NTRS1981

Influence of current needs on the advancement of aluminum electrolytic capacitors

The need for cost effective, high performance, long life capacitors with improved reliability is discussed. It is shown that a low cost, miniature aluminum capacitor, with improved reliability and proven life, can be produced with existing technology. It is further shown that the capacitor can be specified for 125 C life and shelf test requirements, and meet established standards for their parametric performance.

Moresi, J. A.↗
NASA NTRS1985

Capacitor-Test System

Polycarbonate film capacitors tested for leakage paths with microprocessor controlled multiplexer test sequence. Microprocessor based capacitor test system simultaneously monitors 80 capacitors.

Ott, F. M.↗
NASA NTRS1983

High-current, high-frequency capacitors

The NASA Lewis high-current, high-frequency capacitor development program was conducted under a contract with Maxwell Laboratories, Inc., San Diego, California. The program was started to develop power components for space power systems. One of the components lacking was a high-power, high-frequency capacitor. Some of the technology developed in this program may be directly usable in an all-electric airplane. The materials used in the capacitor included the following: the film is polypropylene, the impregnant is monoisopropyl biphenyl, the conductive epoxy is Emerson and Cuming Stycast 2850 KT, the foil is aluminum, the case is stainless steel (304), and the electrode is a modified copper-ceramic.

Renz, D. D.↗
NASA NTRS1983

Material considerations for high frequency, high power capacitors

Dielectric materials chosen for use in this high frequency, high power capacitor must endure hard vacuum conditions, high currents (up to 125 A rms), and frequencies up to 40 kHz. Temperature requirements for this type of capacitor are that capacitor operation must be efficient up to 125 C. A more stringent requirement for the sold dielectric is that the temperature coefficient of dissipation factor should indicate self stabilization well below 125 C. In addition, the dielectric temperature coefficient of capacitance should be negative.

White, W.↗
NASA NTRS1986

Determining Internal Connections in Capacitors

Simple electrical test shows which terminals connected to outer capacitor foil. Test makes it unnecessary to resort to X-ray inspection to distinguish terminals. When outer foil of capacitor is attached to ungrounded signal-generator output lead, oscilloscope displays higher waveform amplitude. When outer foil is joined to grounded signalgenerator output lead, waveform amplitude is lower. Test also used to determine internal connections in multiple-element capacitors.

Ott, F. M.↗
NASA NTRS1984

MOSFET and MOS capacitor responses to ionizing radiation

The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

Benedetto, J. M.↗
NASA NTRS1986

Capacitor-type micrometeoroid detectors

The metal oxide semiconductor (MOS) capacitor micrometeroid detector consists of a thin dielectric capacitor fabricated on a silicon wafer. In operation, the device is charged to a voltage level sufficiently near breakdown that micrometeoroid impacts will cause dielectric deformation or heating and subsequent arc-over at the point of impact. Each detector is capable of recording multiple impacts because of the self-healing characteristics of the device. Support instrumentation requirements consist of a voltage source and pulse counters that monitor the pulse of recharging current following every impact. An investigation has been conducted in which 0.5 to 5 micron diameter carbonized iron spheres traveling at velocities of 4 to 10 Km/sec were impacted on to detectors with either a dielectric thickness of 0.4 or 1.0 micron. This study demonstrated that an ion microprobe tuned to sufficiently high resolution can detect Fe remaining on the detector after the impact. Furthermore, it is also possible to resolve Fe ion images free of mass interferences from Si, for example, giving its spatial distribution after impact. Specifically this technique has shown that significant amounts of impacting particles remain in the crater and near it which can be analyzed for isotopic content. Further testing and calibration could lead to quantitive analysis. This study has shown that the capacitor type micrometeroid detector is capable of not only time and flux measurements but can also be used for isotopic analysis.

Wortman, J. J.↗
NASA NTRS1989

Low-Inductance Capacitor For Low Temperatures

Planar capacitor made on epoxy/fiberglass printed-circuit board. Planar design and flat copper plates ensure low inductance and low series resistance. Planar construction minimized effects of thermal contraction, and epoxy/fiberglass substrate ensured high breakdown voltage. Design is simple, and this type of capacitor easy for any printed-circuit-board facility to fabricate. Design suitable for any small-capacitance, high-voltage capacitor, whether operating at low or high temperature.

Rhodes, David B.↗
NASA NTRS1991

Ferroelectric Memory Capacitors For Neural Networks

Thin-film ferroelectric capacitors proposed as nonvolatile analog memory devices. Intended primarily for use as synaptic connections in electronic neural networks. Connection strengths (synaptic weights) stored as nonlinear remanent polarizations of ferroelectric films. Ferroelectric memory and interrogation capacitors combined into memory devices in vertical or lateral configurations. Photoconductive layer modulated by light provides variable resistance to alter bias signal applied to memory capacitor. Features include nondestructive readout, simplicity, and resistance to ionizing radiation. Interrogated without destroying stored analog data. Also amenable to very-large-scale integration. Allows use of ac coupling, eliminating errors caused by dc offsets in amplifier circuits of neural networks.

Thakoor, Sarita↗
NASA NTRS1990

MIS capacitor studies on silicon carbide single crystals

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

Kopanski, J. J.↗
NASA NTRS1991

Electrical characterization of glass, teflon, and tantalum capacitors at high temperatures

Dielectric materials and electrical components and devices employed in radiation fields and the space environment are often exposed to elevated temperatures among other things. Therefore, these systems must withstand the high temperature exposure while still providing good electrical and other functional properties. Experiments were carried out to evaluate glass, teflon, and tantalum capacitors for potential use in high temperature applications. The capacitors were characterized in terms of their capacitance and dielectric loss as a function of temperature up to 200 C. At a given temperature, these properties were obtained in a frequency range of 50 Hz to 100 kHz. The DC leakage current measurements were also performed in a temperature range from 20 to 200 C. The obtained results are discussed and conclusions are made concerning the suitability of the capacitors investigated for high temperature applications.

Hammoud, A. N.↗
NASA NTRS1992

Electrical properties of teflon and ceramic capacitors at high temperatures

Space power systems and components are often required to operate efficiently and reliably in harsh environments where stresses, such as high temperature, are encountered. These systems must, therefore, withstand exposure to high temperature while still providing good electrical and other functional properties. Experiments were carried out to evaluate Teflon and ceramic capacitors for potential use in high temperature applications. The capacitors were characterized in terms of their capacitance and dielectric loss as a function of temperature, up to 200 C. At a given temperature, these properties were obtained in a frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed in a temperature range from 25 to 200 C. The results obtained are discussed and conclusions are made concerning the suitability of the capacitors studied for high temperature applications.

Hammoud, A. N.↗
NASA NTRS1991

Comparison of converter topologies for charging capacitors used in pulsed load applications

The authors present a qualitative comparison of different power converter topologies which may be utilized for charging capacitors in pulsed power applications requiring voltages greater than 1 kV. The operation of the converters in capacitor charging applications is described, and relevant advantages are presented. All of the converters except one may be classified in the high-frequency switching category. One of the benefits from high-frequency operation is a reduction in size and weight. The other converter discussed is a member of the command resonant changing category. The authors first describe a boost circuit which functions as a command resonant charging circuit and utilizes a single pulse of current to charge the capacitor. The discussion of high-frequency converters begins with the flyback and Ward converters. Then, the series, parallel, and series/parallel resonant converters are examined.

Nelms, R. M.↗
NASA NTRS1992

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment

Thin film ferroelectric capacitors comprising a ferroelectric film sandwiched between electrodes for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode. The anneal is done so as to form the interface between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550 to 600 C for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the nonswitching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices. The formation treatment also reduces the ratio of change of the charge associated with the nonswitching pulse as a function of retention time. These improved memory devices exhibit greater performance in retention and reduced fatigue in memory arrays.

Thakoor, Sarita↗
NASA NTRS1994

Automated System Tests Ferroelectric Capacitors

Polarization-switching parameters measured under computer control. Ferroelectric-capacitor-testing system applies voltage pulses and measures responses of ferroelectric capacitor to determine write; "time dependence of polarization," polarization-retention and fatigue characteristics of capacitor. Highly integrated setup quite flexible, versatile, and interactive, and allows convenient computer storage and analysis of data.

Lakata, Mark↗