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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Measurements of Lunar Dust Charging Properties by Electron Impact

Dust grains in the lunar environment are believed to be electrostatically charged predominantly by photoelectric emissions resulting from solar UV radiation on the dayside, and on the nightside by interaction with electrons in the solar wind plasma. In the high vacuum environment on the lunar surface with virtually no atmosphere, the positive and negative charge states of micron/submicron dust grains lead to some unusual physical and dynamical dust phenomena. Knowledge of the electrostatic charging properties of dust grains in the lunar environment is required for addressing their hazardous effect on the humans and mechanical systems. It is well recognized that the charging properties of individual small micron size dust grains are substantially different from the measurements on bulk materials. In this paper we present the results of measurements on charging of individual Apollo 11 and Apollo 17 dust grains by exposing them to mono-energetic electron beams in the 10-100 eV energy range. The charging/discharging rates of positively and negatively charged particles of approx. 0.1 to 5 micron radii are discussed in terms of the sticking efficiencies and secondary electron yields. The secondary electron emission process is found to be a complex and effective charging/discharging mechanism for incident electron energies as low as 10-25 eV, with a strong dependence on particle size. Implications of the laboratory measurements on the nature of dust grain charging in the lunar environment are discussed.

Abbas, Mian M.↗
NASA NTRS1990

Calorimetric determination of thermal parameters for the Li/BrCl in SOCl2 (BCX) chemistry

The heat capacity of a Li-BCX DD-cell was found to be dependent on its state of charge by drop calorimetry measurements. The method of drop calorimetry involves measuring the energy (joules) gained or lost from a sample that is transferred from a bath at temperature A to one at temperature B. The thermoneutral potential is defined as the cell potential where the cell electrochemical reactions are neither exothermic nor endothermic. A Hart scientific calorimeter system, Model No. S77XX, designed for heat conduction calorimetry and drop calorimetry was used. Calorimetric analysis yielded a thermoneutral potential of 4.14 volts and a cell heat capacity dependent on the state of charge.

Darcy, Eric C.↗
NASA NTRS1982

Charge exchange in the Io torus and exosphere

Charge-exchange cross sections and their velocity dependence have been estimated for the most important reactions in the Io torus and exosphere. The methods used for calculating the cross sections are given and discussed in some detail. For symmetric-resonant single and double charge exchange, the cross sections are slowly varying functions of velocity. For inelastic charge-exchange collisions, the transition probabilities into a given final state can depend critically on velocity. Models are described which can be used to estimate both the most rapid charge-exchange processes and those states which play an important role. Calculated cross sections are used to obtain reaction rates as a function of radial position, demonstrating the importance of charge exchange in the inner torus. Charge-exchange reactions of torus ions with molecular species in Io's exosphere may yield a net supply of neutrals and plasma to the torus.

Johnson, R. E.↗
NASA NTRS1997

Charge Transfer Between Ground-State Si(3+) and He at Electron-Volt Energies

The charge-transfer rate coefficient for the reaction Si(3+)(3s(sup 2)S) + He yields products is measured by means of a combined technique of laser ablation and ion storage. A cylindrical radio-frequency ion trap was used to store Si(3+) ions produced by laser ablation of solid silicon targets. The rate coefficient of the reaction was derived from the decay rate of the ion signal. The measured rate coefficient is 6.27(exp +0.68)(sub -0.52) x 10(exp -10)cu cm/s at T(sub equiv) = 3.9 x 10(exp 3)K. This value is about 30% higher than the Landau-Zener calculation of Butler and Dalgarno and is larger by about a factor of 3 than the recent full quantal calculation of Honvault et al.

Fang, Z.↗
NASA NTRS2009

Fuel-Cell Power Systems Incorporating Mg-Based H2 Generators

Two hydrogen generators based on reactions involving magnesium and steam have been proposed as means for generating the fuel (hydrogen gas) for such fuel-cell power systems as those to be used in the drive systems of advanced motor vehicles. The hydrogen generators would make it unnecessary to rely on any of the hydrogen storage systems developed thus far that are, variously, too expensive, too heavy, too bulky, and/or too unsafe to be practical. The two proposed hydrogen generators are denoted basic and advanced, respectively. In the basic hydrogen generator (see figure), steam at a temperature greater than or equals 330 C would be fed into a reactor charged with magnesium, wherein hydrogen would be released in the exothermic reaction Mg + H2O yields MgO + H2. The steam would be made in a flash boiler. To initiate the reaction, the boiler could be heated electrically by energy borrowed from a storage battery that would be recharged during normal operation of the associated fuel-cell subsystem. Once the reaction was underway, heat from the reaction would be fed to the boiler. If the boiler were made an integral part of the hydrogen-generator reactor vessel, then the problem of transfer of heat from the reactor to the boiler would be greatly simplified. A pump would be used to feed water from a storage tank to the boiler.

Kindler, Andrew↗
NASA NTRSDate not supplied

Recent Advances in Structural Carbon Nanotube Composites

Carbon nanotubes (CNT) have been a subject of investigation for more than two decades. Part of the interest in CNTs was driven by CNT tensile mechanical properties at the nanoscale that suggest their potential to outperform state-of-the-art (SOA) lightweight structural materials. Early work on the development of CNT nanocomposites involved the dispersion of CNT powder into polymer matrices. Although low levels of CNT doping resulted in meaningful increases in electrical conductivity to enable applications such as electrostatic charge dissipation, the highest concentrations of CNTs in these lightly doped nanocomposites did not yield mechanical properties that could compete with SOA carbon fiber composites. The maximum concentration of CNTs in lightly doped nanocomposites was limited to about 5% due to increases in viscosity that prevent the fabrication of good quality nanocomposites. At the lower concentrations, properties of the resulting nanocomposites were analogous to those of composites made with very short, chopped carbon fibers. About ten years ago, CNTs became available in continuous fiber form, allowing the investigation of processing methods to incorporate much higher CNT content into composites. Recent developments in CNT composite fabrication have yielded improved mechanical properties and indicate that while some standard carbon fiber composite processing methods can be used, CNTs have unique microstructural features that require techniques tailored to access the hierarchical features of CNTs. This presentation will discuss the evolution of structural CNT mechanical property advancements and collaboration mechanisms for research across federal labs, academia, and industry that accelerated the maturation of structural CNTs.

Carbon Nanotubes↗
NASA NTRS1978

The effect of N2/+/ recombination on the aeronomic determination of the charge exchange rate coefficient of O/+//2D/ with N2

The Atmosphere Explorer (AE) data are reexamined in the light of new laboratory measurements of the N2(+) recombination rate coefficient alpha. The new measurements support earlier measurements which yielded values of alpha significantly lower than the AE values. It is found that the values for alpha determined from the satellite data can be reconciled with the laboratory measurements, if the charge exchange rate coefficient for O(+)(2D) with N2 is less than one-quarter of that derived in the laboratory by Rutherford and Vroom (1971).

Torr, D. G.↗
NASA NTRS1979

Plasma property and performance prediction for mercury ion thrusters

The discharge chambers of mercury ion thrusters are modelled so the principal effects and processes which govern discharge plasma properties and thruster performance are described. The conservation relations for mass, charge and energy when applied to the Maxwellian electron population in the ion production region yield equations which may be made one-dimensional by the proper choice of coordinates. Solutions to these equations with the appropriate boundary conditions give electron density and temperature profiles which agree reasonably well with measurements. It is then possible to estimate plasma properties from thruster design data and those operating parameters which are directly controllable. By varying the operating parameter inputs to the computer code written to solve these equations, perfromance curves are obtained which agree quite well with measurements.

Longhurst, G. R.↗
NASA NTRS1984

Recent developments in semiconductor research

Recent findings drawn from various laboratories focused toward a new understanding of the nature of crystal growth and how impurities are incorporated or excluded from the lattice were considered. From these findings a heuristic approach is given for improving the uniformity and charge carrier concentration of thin semiconductor films. Such improvement is considered essential to achieve respectable yield on large scale integrated circuits. A tentative conclusion is drawn which indicates that if the host compound crystal reactants are provided to the growing crystal surface in a reasonably stoichiometric manner, it is virtually impossible to include impurities into a growing crystal surface held at a sufficiently low temperature; impurities are incorporated into the crystal by gettering action of crystal defects located one and two monlayers beneath the growing surface. Devices in 3-5 semiconductors based on heterojunctions and two dimensional electron gases are noted and reliability concerns are voiced. Alternatives and novel device structures such as truly single crystal high quality silicon on insulator and beta silicon carbide devices are presented.

Yoder, M. N.↗
NASA NTRS1989

Novel nitrogen-based organosulfur electrodes for advanced intermediate temperature batteries

Advanced secondary batteries operating at intermediate temperatures (100 to 200 C) have attracted considerable interest due to their inherent advantages (reduced corrosion and safety risks) over higher temperature systems. Current work in this laboratory has involved research on a class of intermediate temperature Na/beta double prime- alumina/RSSR batteries conceptually similar to Na/S cells, but operating within a temperature range of 100 to 150 C, and having an organosulfur rather than inorganic sulfur positive electrode. The organosulfur electrodes are based on the reversible, two electron eduction of organodisulfides to the corresponding thiolate anions, RSSR + 2 electrons yield 2RS(-), where R is an organic moiety. Among the advantages of such a generic redox couple for battery research is the ability to tailor the physical, chemical, and electrochemical properties of the RSSR molecule through choice of the organic moiety. The viscosity, liquidus range, dielectric constant, equivalent weight, and redox potential can in fact be verified in a largely predictable manner. The current work concerns the use of multiple nitrogen organosulfur molecules, chosen for application in Na/RSSR cells for their expected oxidizing character. In fact, a Na/RSSR cell containing one of these materials, the sodium salt of 5-mercapto 1-methyltetrazole, yielded the highest open circuit voltage obtained yet in the laboratory; 3.0 volts in the charged state and 2.6 volts at 100 percent discharge. Accordingly, the cycling behavior of a series of multiple nitrogen organodisulfides as well as polymeric organodisulfides are presented in this manuscript.

Visco, S. J.↗
NASA NTRS1989

Solar abundances as derived from solar energetic particles

Recent studies have shown that there are well defined average abundances of heavy (Z above 2) solar energetic particles (SEPs), with variations in the acceleration and propagation producing a systematic flare-to-flare fractionation that depends on the charge per unit mass of the ion. Correcting the average SEP abundances for this fractionation yields SEP-derived coronal abundances for 20 elements. High-resolution SEP studies have also provided isotopic abundances for five elements. SEP-derived abundances indicate that elements with high first ionization potentials (greater than 10 eV) are depleted in the corona relative to the photosphere and provide new information on the solar abundance of C and Ne-22.

Stone, E. C.↗
NASA NTRS2004

Arylethynyl Substituted 9,lO-Anthraquinones: Tunable Stokes Shifts by Substitution and Solvent Polarity

2-Arylethynyl- and 2,6- and 2,7-diarylethynyl-substituted 9,lO-anthraquinones were synthesized via Sonogashira coupling reactions of 2-bromo-, 2,6-dibromo-, and 2,7-dibromo-9,10- anthraquinone with para-substituted phenylacetylenes. While the redox properties of those compounds are almost insensitive to substitution, their absorption maxima are linearly related to the Hammett constants with different slopes for electron donors and electron acceptors. ABI compounds are photoluminescent both in solution (quantum yields of emission <= 6 %), and as solids. The emission spectra have the characteristics of charge-transfer bands with large Stokes shifts (100-250 nm). The charge-transfer character of the emitting state is supported by large dipole moment differences between the ground and the excited state as concluded on the basis of molecular modeling and Lippert-Mataga correlations of the Stokes shifts with solvent polarity. Maximum Stokes shifts are attained by both electron-donating and -withdrawing groups. This is explained by a destabilization of the HOMO by electron donors and a stabilization of the LUMO by electron acceptors. X-ray crystallographic analysis of, for example, 2,7-bisphenylethynfl- 9,lO-anthraquinone reveals a monoclinic P21In space group and no indication for pi-overlap that would promote quenching, thus explaining emission from the solid state. Representative reduced forms of the title compounds were isolated as stable acetates of the corresponding dihydrs-9,10- anthraquinones. The emission of these compounds is blue-shifted relative to the parent oxidized forms and is attributed to internal transitions in the dihydro-9,lO-anthraquinone core.

Yang, Jinhua↗
NASA NTRS1987

Four-shooter - A large format charge-coupled device camera for the Hale telescope

The Hale telescope has employed an astronomical camera using four 800x800 CCDs in an optical arrangement that allows the imaging of a contiguous 1600-pixel-square region of the sky; reimaging optics are then used to yield a scale of 0.33 arcsec/pixel. Optical coatings are incorporated to yield a throughput at peak efficiency of nearly 50 percent, including telescope losses. This camera can be used in a scanning mode, in which the telescope tracking rate is offset and the charge is clocked in the chips in such a way that the charge image remains aligned with the optical image. Attention is given to the results of a survey for high-redshift quasars using this equipment, which has produced images for the most distant galaxy clusters yet discovered.

Gunn, James E.↗
NASA NTRS2000

Hierarchical Statistical 3D ' Atomistic' Simulation of Decanano MOSFETs: Drift-Diffusion, Hydrodynamic and Quantum Mechanical Approaches

When MOSFETs are scaled to deep submicron dimensions the discreteness and randomness of the dopant charges in the channel region introduces significant fluctuations in the device characteristics. This effect, predicted 20 year ago, has been confirmed experimentally and in simulation studies. The impact of the fluctuations on the functionality, yield, and reliability of the corresponding systems shifts the paradigm of the numerical device simulation. It becomes insufficient to simulate only one device representing one macroscopical design in a continuous charge approximation. An ensemble of macroscopically identical but microscopically different devices has to be characterized by simulation of statistically significant samples. The aims of the numerical simulations shift from predicting the characteristics of a single device with continuous doping towards estimating the mean values and the standard deviations of basic design parameters such as threshold voltage, subthreshold slope, transconductance, drive current, etc. for the whole ensemble of 'atomistically' different devices in the system. It has to be pointed out that even the mean values obtained from 'atomistic' simulations are not identical to the values obtained from continuous doping simulations. In this paper we present a hierarchical approach to the 'atomistic' simulation of aggressively scaled decanano MOSFETs. A full scale 3D drift-diffusion'atomostic' simulation approach is first described and used for verification of the more economical, but also more restricted, options. To reduce the processor time and memory requirements at high drain voltage we have developed a self-consistent option based on a thin slab solution of the current continuity equation only in the channel region. This is coupled to the Poisson's equation solution in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison with the full self-consistent solution. At low drain voltage only single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. A pilot version of a hydrodynamic 'atomistic' simulator has been developed in order to study the effect of the nonequilibrium, non local transport in decanano MOSFETs on the random dopant induced current fluctuations. For the first time we have also applied the density gradient approach in 3D to investigate the effect of the quantum confinement on the threshold voltage fluctuations. The developed 'atomistic' simulation techniques have been applied to study various fluctuation resistant MOSFET architectures including epitaxial and delta doped devices.

Asenov, Asen↗
NASA NTRS1983

A threshold effect for spacecraft charging

The borderline case between no charging and large (kV) negative potentials for eclipse charging events on geosynchronous satellites is investigated, and the dependence of this transition on a threshold energy in the ambient plasma is examined. Data from the Applied Technology Satellite 6 and P78-2 (SCATHA) show that plasma sheet fluxes must extend above 10 keV for these satellites to charge in eclipse. The threshold effect is a result of the shape of the normal secondary yield curve, in particular the high energy crossover, where the secondary yield drops below 1. It is found that a large portion of the ambient electron flux must exceed this energy for a negative current to exist.

Olsen, R. C.↗
NASA NTRS1991

Effect of ohmic, mass-transfer, and kinetic resistances on linear-sweep voltammetry in a cylindrical-pore electrode

A means is presented to account for the effect of ohmic, mass-transfer, and kinetic resistances on linear-sweep voltammograms by modeling a pore in a porous matrix as a cylindrical-pore electrode, and solving the mass and charge conservation equations in the context of this geometry for the simply redox reaction O + ne(-) yield R where both O and R are soluble species. Both analytical and numerical techniques are used to solve the governing equations. The calculated peak currents and potentials are correlated by empirical formulas to the measurable parameters: sweep rate, concentration of the redox species, diffusion coefficient, conductivity of the electrolyte, and pore dimensions. Using the correlations, a methodology is established for determining if the redox reaction kinetics are irreversible or reversible (Nernstian). If the reaction is irreversible, it is shown how the standard rate constant and the transfer coefficient may be extracted from linear-sweep voltammetry data, or, if the reaction is reversible, how the number of electrons transferred may be deduced.

Weidner, John W.↗
NASA NTRS1997

Measurement of Charge Transfer Rate Coefficient Between Ground-State N(2+) Ion and He at Electron-Volt Energies

The charge transfer rate coefficient for the reaction N(2+)(2p(sup 2)P(sup 0)) + He yields products is measured by recording the time dependence of the N(2+) ions stored in an ion trap. A cylindrical radio-frequency ion trap was used to store N(2+) ions produced by laser ablation of a solid titanium nitride target. The decay of the ion signals was analyzed by single exponential least-squares fits to the data. The measured rate coefficient is 8.67(0.76) x 10(exp -11)sq cm/s. The N(2+) ions were at a mean energy of 2.7 eV while He gas was at room temperature, corresponding to an equivalent temperature of 3.9 x 10(exp 3) K. The measured value is in good agreement with a recent calculation.

Fang, Z.↗
NASA NTRS2006

Single Event Effects Test Results for Advanced Field Programmable Gate Arrays

Reconfigurable Field Programmable Gate Arrays (FPGAs) from Altera and Actel and an FPGA-based quick-turnApplication Specific Integrated Circuit (ASIC) from Altera were subjected to single-event testing using heavy ions. Both Altera devices (Stratix II and HardCopy II) exhibited a low latchup threshold (below an LET of 3 MeV-cm2/mg) and thus are not recommended for applications in the space radiation environment. The flash-based Actel ProASIC Plus device did not exhibit latchup to an effective LET of 75 MeV-cm2/mg at room temperature. In addition, these tests did not show flash cell charge loss (upset) or retention damage. Upset characterization of the design-level flip-flops yielded an LET threshold below 10 MeV-cm2/mg and a high LET cross section of about lxlO-6 cm2/bit for storing ones and about lxl0-7 cm2/bit for storing zeros . Thus, the ProASIC device may be suitable for critical flight applications with appropriate triple modular redundancy mitigation techniques.

Field Programmable Gate Arrays↗