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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Assessment study of infrared detector arrays for low-background astronomical research

The current state-of-the-art of infrared detector arrays employing charge coupled devices (CCD) or charge injection devices (CID) readout are assessed. The applicability, limitations and potentials of such arrays under the low-background astronomical observing conditions of interest for SIRFT (Shuttle Infrared Telescope Facility) are determined. The following are reviewed: (1) monolithic extrinsic arrays; (2) monolithic intrinsic arrays; (3) charge injection devices; and (4) hybrid arrays.

Ando, K. J.↗
NASA NTRS1998

Design and Specification of Optical Bandpass Filters for Hubble Space Telescope (HST) Advanced Camera for Surveys (ACS)

Advanced optical bandpass filters for the Hubble Space Telescope (HST) Advanced Camera for Surveys (ACS) have been developed on a filter-by-filter basis through detailed studies which take into account the instrument's science goals, available optical filter fabrication technology, and developments in ACS's charge-coupled-device (CCD) detector technology. These filters include a subset of filters for the Sloan Digital Sky Survey (SDSS) which are optimized for astronomical photometry using today's charge-coupled-devices (CCD's). In order for ACS to be truly advanced, these filters must push the state-of-the-art in performance in a number of key areas at the same time. Important requirements for these filters include outstanding transmitted wavefront, high transmittance, uniform transmittance across each filter, spectrally structure-free bandpasses, exceptionally high out of band rejection, a high degree of parfocality, and immunity to environmental degradation. These constitute a very stringent set of requirements indeed, especially for filters which are up to 90 mm in diameter. The highly successful paradigm in which final specifications for flight filters were derived through interaction amongst the ACS Science Team, the instrument designer, the lead optical engineer, and the filter designer and vendor is described. Examples of iterative design trade studies carried out in the context of science needs and budgetary and schedule constraints are presented. An overview of the final design specifications for the ACS bandpass and ramp filters is also presented.

Leviton, Douglas B.↗
NASA NTRS1985

Wide Angle Michelson Doppler Imaging Interferometer (WAMDII)

The wide angle Michelson Doppler imaging interferometer (WAMDII) is a specialized type of optical Michelson interferometer working at sufficiently long path difference to measure Doppler shifts and to infer Doppler line widths of naturally occurring upper atmospheric Gaussian line emissions. The instrument is intended to measure vertical profiles of atmospheric winds and temperatures within the altitude range of 85 km to 300 km. The WAMDII consists of a Michelson interferometer followed by a camera lens and an 85 x 106 charge coupled device photodiode array. Narrow band filters in a filter wheel are used to isolate individual line emissions and the lens forms an image of the emitting region on the charge coupled device array.

Roberts, W. T.↗
NASA NTRS1986

Wide Angle Michelson Doppler Imaging Interferometer (WAMDII)

The wide angle Michelson Doppler imaging interferometer (WAMDII) is a specialized type of optical Michelson interferometer working at sufficiently long path difference to measure Doppler shifts and to infer Doppler line widths of naturally occurring upper atmospheric Gaussian line emissions. The instrument is intended to measure vertical profiles of atmospheric winds and temperatures within the altitude range of 85 km to 300 km. The WAMDII consists of a Michelson interferometer followed by a camera lens and an 85 x 106 charge coupled device photodiode array. Narrow band filters in a filter wheel are used to isolate individual line emissions and the lens forms an image of the emitting region on the charge coupled device array.

Roberts, B.↗
NASA NTRS1986

A study of Si:In hybrid surface channel IRCCD devices

Hybrid silicon Infrared Charge Coupled Devices (IRCCDs) are evaluated for use as viable astronomical detectors. A Si:In photoconductor array which is bump-bonded to a silicon multiplexer is described. A summary of the device parameters is given.

Tollestrup, E.↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

charged coupled devices (CCDs)↗
NASA NTRS1977

Further development of an indium antimonide (InSb)Charge-Coupled Infrared Imaging Device (CCIRID), 20-element linear imager

Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.

Source record↗
NASA NTRS1981

Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID)

The continued development of monolithic InSb charge coupled infrared imaging devices (CCIRIDs) is discussed. The processing sequence and structural design of 20-element linear arrays are discussed. Also, results obtained from radiometric testing of the 20-element arrays using a clamped sample-and-hold output circuit are reported. The design and layout of a next-generation CCIRID chip are discussed. The major devices on this chip are a 20 by 16 time-delay-and-integration (TDI) area array and a 100-element linear imaging array. The development of a process for incorporating an ion implanted S(+) planar channel stop into the CCIRID structure and the development of a thin film transparent photogate are also addressed. The transparent photogates will increase quantum efficiency to greater than 70% across the 2.5 to 5.4 micrometer spectral region in future front-side illuminated CCIRIDs.

Koch, T. L.↗
NASA NTRS1994

Spatial Acquisition in the Presence of Satellite Vibrations for Free Space Optical Communication Link

Laser communication systems offer distinct advantages over radio frequency based systems for near earth and particularly for deep space communicaiton links. Some of the advantages are smaller size, lower power requirements and higher data rates. However, laser beam widths are very narrow and require more precise pointing, acquisition and tracking (PAT) compared to RF communication sytems. In addition to imprecise knowledge of relative position and complex relative motion between the spacecrafts, the problem of pointing and acquisition is complicated by vibrations present in the spacecraft. This paper analyzes the impact of satellite vibration on acquisition time and acquisition probability for a charge coupled device (CCD) based acquisition scheme.

laser↗
NASA NTRS1991

Altering Interline Transfer In A CCD To Reduce Saturation

In proposed interline-transfer timing scheme for charge-coupled-device (CCD) video imaging array, charges accumulated during some fraction of frame period swept out and dumped to prevent overloading and saturation in intensely illuminated photosites. Excess charges swept out at highest possible rate, while charges used for imaging read out at rate lower but was highest rate that provides complete transfer of charge on array and handled by subsequent signal-processing equipment.

Rentsch, Edward M.↗
NASA NTRS1991

A resistive-gate In(0.53)Ga(0.47)As/InP heterostructure CCD

The first InGaAs/InP charge-coupled device is demonstrated, exhibiting a charge transfer efficiency (CTE) of 0.98 at 13 MHz and 1 GHz. Cooling the device improves the CTE to greater than 0.99 at 13-MHz clock frequency. The 0.76-eV In(0.53)Ga(0.47)As bandgap makes this structure applicable to direct-detection short-wavelength infrared imagers.

Rossi, D. V.↗
NASA NTRS2010

Aligning Astronomical Telescopes via Identification of Stars

A proposed method of automated, precise alignment of a ground-based astronomical telescope would eliminate the need for initial manual alignment. The method, based on automated identification of known stars and other celestial objects in the telescope field of view, would also eliminate the need for an initial estimate of the aiming direction. The method does not require any equipment other than a digital imaging device such as a charge-coupled-device digital imaging camera and control computers of the telescope and camera, all of which are standard components in professional astronomical telescope systems and in high-end amateur astronomical telescope systems. The method could be implemented in software running in the telescope or camera control computer or in an external computer communicating with the telescope pointing mount and camera control computers.

Whorton, Mark↗
NASA NTRS1999

Signal processing applications of massively parallel charge domain computing devices

The present invention is embodied in a charge coupled device (CCD)/charge injection device (CID) architecture capable of performing a Fourier transform by simultaneous matrix vector multiplication (MVM) operations in respective plural CCD/CID arrays in parallel in O(1) steps. For example, in one embodiment, a first CCD/CID array stores charge packets representing a first matrix operator based upon permutations of a Hartley transform and computes the Fourier transform of an incoming vector. A second CCD/CID array stores charge packets representing a second matrix operator based upon different permutations of a Hartley transform and computes the Fourier transform of an incoming vector. The incoming vector is applied to the inputs of the two CCD/CID arrays simultaneously, and the real and imaginary parts of the Fourier transform are produced simultaneously in the time required to perform a single MVM operation in a CCD/CID array.

Fijany, Amir↗
NASA NTRSDate not supplied

Spectrally Dependent Radiometric Measurement Errors Due to Ccd Serial Pixel-to-Pixel Readout Interference in the Ocean Color Instrument of the NASA PACE Mission

The Ocean Color Instrument on NASA’s PACE mission is a 322 887 nm hyperspectral imager with 1 km x 1 km nadir spatial resolution and 5 nm spectral resolution utilizing charge-coupled devices (CCDs) operating in Time Delay Integration (TDI) mode where each TDI column represents a different wavelength in 0.625 nm increments. After TDI, the charge is moved into serial output pixels and read out. The spatial resolution requires an 8.5 MHz readout rate. This only allows 59 ns for the CCD reset and video to be asserted and settled before sampling. The response exhibits serial pixel-to-pixel readout interference due to the lack of full settling. Each serial pixel value has a dependence on the value of the preceding pixel value. This leads to a spectrally dependent radiometric measurement error of up to 0.3 %. We explain the operation of the detection system, the behavior of the interference, and show the resulting measurement error based on data from both ground testing and on-orbit characterization.

Remote Sensing↗
NASA NTRS2024

Spectrally Dependent Radiometric Measurement Errors Due to CCD Serial Pixel-to-Pixel Readout Interference in the Ocean Color Instrument of the NASA PACE Mission

The Ocean Color Instrument on NASA’s PACE mission is a 322 887 nm hyperspectral imager with 1 km x 1 km nadir spatial resolution and 5 nm spectral resolution utilizing charge-coupled devices (CCDs) operating in Time Delay Integration (TDI) mode where each TDI column represents a different wavelength in 0.625 nm increments. After TDI, the charge is moved into serial output pixels and read out. The spatial resolution requires an 8.5 MHz readout rate. This only allows 59 ns for the CCD reset and video to be asserted and settled before sampling. The response exhibits serial pixel-to-pixel readout interference due to the lack of full settling. Each serial pixel value has a dependence on the value of the preceding pixel value. This leads to a spectrally dependent radiometric measurement error of up to 0.3 %. We explain the operation of the detection system, the behavior of the interference, and show the resulting measurement error based on data from both ground testing and on-orbit characterization.

Remote Sensing↗
NASA NTRS1997

Active Pixel Sensor (APS) based Star Tracker

Charge-Coupled Device (CCD) based star trackes provide reliable attitude estimation onboard most 3 axis stabilized spacecraft. The spacecraft attitude is calculated based on observed positions of stars, which are located and identified in a CCD image of the sky.

active↗
NASA NTRS1982

Development and evaluation of integrated infrared arrays for astronomical applications

The status of a technology program to evaluate existing infrared detector arrays, and to develop improved ones for low background astronomical applications, is described. For applications such as the Shuttle Infrared Telescope Facility, arrays that cover as much of the 1-1000 micron range as possible are of interest. Low background test results for a 2 x 64 Si:Bi charge-injection-device, and 1 x 20 InSb charge-coupled-device arrays, are included. As a result of the present testing, improved, astronomy-optimized extrinsic silicon arrays in both linear and area formats are planned. Efforts to develop accumulation mode MOSFETs specifically for liquid helium temperatures, and cryogenic amplifier and multiplexer circuits, are discussed.

Mccreight, C. R.↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 °C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices ((CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

Nikzad, Shouleh↗