Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal–Organic Chemical Vapor Deposition
Not Available
2D semiconductor growth↗
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Universal progression of structure and dynamics in colloidal nanocrystal gels during salt-accelerated aging
Controlling the structure and function of colloidal gels requires a detailed understanding of how the various components govern network formation and aging. In particular, molecular additives like salts are widely used to tune interparticle interactions, yet their influence on gelation pathways in complex systems such as colloidal nanocrystal gels remains inadequately understood. Here, we investigate how noncoordinating salts modulate the evolution of gels formed using chemically linked tin-doped indium oxide nanocrystals. Through combined structural, dynamic, and kinetic analyses, we demonstrate that increasing salt concentration accelerates gelation. When rescaled by salt-dependent characteristic times, the evolution collapses onto universal trajectories, revealing a time-salt superposition principle. The universality extends across length scales, suggesting a consistent salt-dependent mechanism that controls both local structuring and macroscopic network formation. This observed salt modulation of structure and dynamics provides a predictive basis for controlling the kinetics of nonequilibrium nanocrystal gel assembly, enhancing the rational design of functional nanomaterials with tunable properties.
36 MATERIALS SCIENCE↗
Deep Learning Method to Accelerate Discovery of Effective Doping in Sr1-xRxFe1-yMyO3-δ Oxygen Carriers for Chemical Looping Air Separation
APS March Meeting 2022, Virtual, March 13-18, 2022
Ramazani, Ali↗
Sulfur-doped graphene anchoring of ultrafine Au 25 nanoclusters for electrocatalysis
The biggest challenge of exploring the catalytic properties of under-coordinated nanoclusters is the issue of stability. We demonstrate herein that chemical dopants on sulfur-doped graphene (S-G) can be utilized to stabilize ultrafine (sub-2 nm) Au 25 (PET)18 clusters to enable stable nitrogen reduction reaction (NRR) without significant structural degradation. The Au 25 @S-G exhibits an ammonia yield rate of 27.5μgNH 3 ∙ mg Au -1 ∙ h -1 at -0.5 V with faradic efficiency of 2.3%. More importantly, the anchored clusters preserve ~ 80% NRR activity after four days of continuous operation, a significant improvement over the 15% remaining ammonia production rate for clusters loaded on undoped graphene tested under the same conditions. Isotope labeling experiments confirmed the ammonia was a direct reaction product of N 2 feeding gas instead of other chemical contaminations. Ex-situ X-ray photoelectron spectroscopy and X-ray absorption near-edge spectroscopy of post-reaction catalysts reveal that the sulfur dopant plays a critical role in stabilizing the chemical state and coordination environment of Au atoms in clusters. Further ReaxFF molecular dynamics (RMD) simulation confirmed the strong interaction between Au nanoclusters (NCs) and S-G. Furthermore, this substrate-anchoring process could serve as an effective strategy to study ultrafine nanoclusters’ electrocatalytic behavior while minimizing the destruction of the under-coordinated surface motif under harsh electrochemical reaction conditions.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Role of Curvature in Stabilizing Boron-Doped Nanocorrugated Graphene
Boron-doped carbon nanostructures have attracted great interest recently because of their remarkable electrocatalytic performance comparable to or better than that of conventional metal catalysts. In a previous work (Carbon 123, 605 (2017)), we reported that along with significant performance improvement, B doping enhances the oxidation resistance of few-layer graphene (FLG) that provides increased structural stability for intermediate-temperature fuel-cell electrodes. In general, detailed characterization of the atomic and electronic structure transformations that occur in B-doped carbon nanostructures during fuel-cell operation is lacking. In this work, we use aberration-corrected scanning transmission electron microscopy, nanobeam electron diffraction, and electron energy-loss spectroscopy (EELS) to characterize the atomic and electronic structures of B-doped FLG before and after fuel-cell operation. These data point to the nanoscale corrugation of B-doped FLGs as the key factor responsible for increased stability and high corrosion resistance. In conclusion, the similarity of the 1s to π* and σ* transition features in the B K-edge EELS to those in B-doped carbon nanotubes provides an estimate for the curvature of nanocorrugation in B-FLG.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Controlled Dy-doping to nickel-rich cathode materials in high temperature aerosol synthesis
Layered nickel-rich materials are promising next-generation cathode materials for lithium ion batteries due to their high capacity and low cost. However, the poor thermal stability and longtime cycling performance hinders the commercial applications of high nickel materials. Doping with heteroatoms has been an effective approach for improving electrochemical performance of cathode materials. Controlling doping concentration and geometrical distribution is desired for optimal electrochemical performance, but it is challenging in traditional co-precipitation methods. In this work, controlled dysprosium (Dy) doping to NCM811 was studied in an aerosol synthesis method by controlling the precursor concentrations and heating parameters. The obtained materials were characterized by SEM, XRD, and XPS, and their electrochemical properties and thermal stability were evaluated. By controlling the doping concentration (1.5%), Dy-doped NCM811 was improved simultaneously in long-term cycling and high-rate performance. Here, the thermal-chemical stability of the Dy-doped cathode materials was examined in a microflow reactor with a mass spectrometer. The results showed that Dy-doping shifted the O 2 onset temperature to a higher temperature and reduced O 2 release by 80%, thus dramatically increasing the thermal-chemical stability and improving the fire safety of cathode materials. Since high temperature aerosol synthesis is a low-cost and scalable method, the findings in this work have broad implications for commercial synthesis of novel materials with controlled doping modification to achieve high electrochemical performance and safety in lithium ion batteries.
25 ENERGY STORAGE↗
Magnesium doping profile control in p-GaN layers grown by metalorganic chemical vapor deposition
Not Available
Bakhtiary-Noodeh, Marzieh↗
The role of chemical potential in compensation control in Si:AlGaN
Reduction in compensation in Si-doped Al-rich AlGaN is demonstrated via chemical potential control (CPC). The chemical potentials and the resulting formation energies of carbon on the nitrogen site (C N ) and cation vacancy complex with Si (V III + nSi III ) were related to growth variables through a thermodynamic supersaturation model, which quantitatively predicted the incorporation of C N and the generation of the V III + nSi III complex. The compensation “knee” behavior, i.e., decreasing conductivity with increasing Si incorporation beyond a certain concentration, was successfully controlled. The maximum free carrier concentration was improved by impeding the formation of V III + nSIi III complexes under III-richer conditions, while the impurity compensation by C N was reduced by making the growth environment N-richer. The results of Hall effect measurement and photoluminescence agreed well with quantitative theoretical predictions of the CPC model. Based on the developed model, the highest conductivity of 160 Ω -1 cm -1 with free carrier concentration of 3 × 10 19 cm -3 in Al 0.7 Ga 0.3 N ever reported was achieved on single crystal AlN substrates. The demonstrated predictive power of the CPC model should greatly reduce the empirical analysis or iterative experimentation that would otherwise be necessary.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Development of APCVD BSG and POCl 3 Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication
This paper presents a commercially viable process for fabricating a high-quality double-side tunnel oxide passivating contact (DS-TOPCon) cell precursor using APCVD-deposited boron silicate glass and ex-situ POCl 3 diffusion in a single high-temperature step, eliminating the need for additional masking and diffusion processes. A two-tier temperature profile was developed, involving a pre-annealing at above 900°C in nitrogen (N2) ambient followed by POCl 3 diffusion at 840°C. We investigated the effect of varying pre-annealing temperatures, ranging from 875°C to 950°C, on the passivation quality and metal-Si contact properties of both n-TOPCon and p-TOPCon layers. The resultant DS-TOPCon cell precursor after silicon nitride (SiNX) passivation exhibited an excellent iV OC of close to 730 mV. In addition, a rapid asymmetric poly-Si thinning technique, developed in this work, enabled adjustment of the front n + poly-Si thickness while maintaining the rear p + poly-Si thickness. Two types of DS-TOPCon cell architectures can be fabricated: i) full-area thin (≈40nm) n-TOPCon layer on the front and ii) selective-area thick (≈200nm) n-TOPCon fingers underneath the metal grid. Device simulations suggest that full-area DS-TOPCon cell with 40 nm n + poly-Si and selective-area DS-TOPCon cell with 200 nm n + poly fingers on the front, fabricated from our current DS-TOPCon cell precursor, can achieve cell efficiencies of 22.1 and 23.5%, respectively. Detailed power loss analysis and device simulation reveal that further improvements in material and device parameters have potential to push the cell efficiencies of DS-TOPCon cell structure beyond 25%, making it a promising alternative to fabricate a high-efficiency next-generation solar cells at low cost.
14 SOLAR ENERGY↗
New Approaches to Low-Cost Scalable Doping of Interdigitated back Contact Silicon Solar Cells (Final Report)
The goal of this project was to develop novel approaches to patterning of dopants in the rear fingers of interdigitated back contact (IBC) Si solar cells to reduce the cost of manufacturing this high-efficiency-potential cell architecture. The work throughout this project can be divided into four categories: (a) development of dopant patterning technique using laser scribed Si contacts masks that are mechanically aligned with ~10 μm resolution to the underlying Si substrate; (b) measuring dopant spreading profiles in the isolation region between n- and p-type dopant fingers during plasma-enhanced chemical vapor deposition (PECVD) of doped hydrogenated amorphous silicon (a-Si:H) via shadow masks, and dopant desorption and re-adsorption during high-temperature annealing; (c) understanding the role of dopant compensation on the shunt resistance in contaminated isolation regions through analysis of defect-enhanced compensation; and (d) simulation and fabrication of passivated two-sided grid and back-contact solar cells to demonstrate the use of direct dopant patterning in cell fabrication. For the passivated two-sided grid solar cells, masked deposition was used to demonstrate an improvement in the blue response of the cell by creating a shallow front emitter. During development of the masked PECVD patterning process, we measured 3-D dopant profiles using secondary ion mass spectrometry. After deposition, in the masked region, the phosphorus dopant tail was >100 µm at concentrations >10 19 cm -3 while the boron dopant tail was shorter. During high-temperature crystallization of doped a-Si:H films to polycrystalline Si (poly-Si), phosphorus atoms spread by desorbing from the poly-Si surface and re-adsorbing onto intrinsic poly-Si on adjacent wafers that were separated by several millimeters. These contamination mechanisms resulted in a decrease in resistivity from ~10 5 Ω·cm for intrinsic poly-Si to ~10 -1 Ω·cm for contaminated poly-Si. Mitigation strategies for each contamination mechanism were developed to maintain a resistivity of ~10 5 Ω·cm between doped fingers. During fabrication of the 209 cells created during this project, it was found that despite contamination of the IBC gap through the abovementioned mechanisms, high shunt resistances and FF ~75% were still reached. Investigation into this led to the discovery of defect-enhanced compensation which exists within highly defective poly-Si when net doping concentrations reach the value of defect density (~10 18 cm -3 for many poly-Si films). Simulations guided us in the fabrication of IBCs and the cells fabricated were able to meet the year-end goals for BP 2 and 3 of 15% and 17% IBC cell efficiency, as well as the BP 4 goal of a 1% absolute increase in efficiency for PERC-like devices. However, the most efficient cell created during this project of 18.6% fell short of the 21% final project target. While the champion device fell short in V oc and J sc , many devices fabricated were able to reach the necessary goals of ~40 mA/cm 2 , ~700 mV, and ~75% FF required for a 21% device. The results generated from this project were disseminated through 11 conference presentations and proceedings. Presentations included oral talks at 2019 IEEE PVSC, 2019 MRS Fall Meeting, 2020 PVSEC-30 and 2021 IEEE PVSC, as well as poster presentations at 2020 IEEE PVSC and 2021 SiPV. The project resulted in 2 peer reviewed publications – one published in IEEE Journal of Photovoltaics and one in ACS Applied Energy Materials. The information gained in this project will aid in development of improved processes for fabrication of high-efficiency solar cells and other areas of the semiconductor device industry as well. The IBC cells will also pave the way for higher efficiency tandem devices. Through further manufacturing of high-efficiency solar cells, more of the world’s energy demands can be met through renewable sources, helping to stave off the worst effects that may come about from global climate change.
14 SOLAR ENERGY↗
Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor
Two-dimensional nanoelectronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with ab initio calculations establish the large work function and narrow bands of α-RuCl 3 enable modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition grown graphene and WSe 2 , and molecular beam epitaxy grown EuS. We further demonstrate proof of principle photovoltage devices, control via twist angle, and charge transfer through hexagonal boron nitride. Short-ranged lateral doping (≤65 nm) and high homogeneity are achieved in proximate materials with a single layer of α-RuCl 3 . Here, this leads to the best-reported monolayer graphene mobilities (4900 cm 2 /(V s)) at these high hole densities (3 × 10 13 cm -2 ) and yields larger charge transfer to bilayer graphene (6 × 10 13 cm -2 ).
2D atomic crystals↗
Ion diffusion retarded by diverging chemical susceptibility
Abstract For first-order phase transitions, the second derivatives of Gibbs free energy (specific heat and compressibility) diverge at the transition point, resulting in an effect known as super-elasticity along the pressure axis, or super-thermicity along the temperature axis. Here we report a chemical analogy of these singularity effects along the atomic doping axis, where the second derivative of Gibbs free energy (chemical susceptibility) diverges at the transition point, leading to an anomalously high energy barrier for dopant diffusion in co-existing phases, an effect we coin as super-susceptibility. The effect is realized in hydrogen diffusion in vanadium dioxide (VO 2 ) with a metal-insulator transition (MIT). We show that hydrogen faces three times higher energy barrier and over one order of magnitude lower diffusivity when it diffuses across a metal-insulator domain wall in VO 2 . The additional energy barrier is attributed to a volumetric energy penalty that the diffusers need to pay for the reduction of latent heat. The super-susceptibility and resultant retarded atomic diffusion are expected to exist universally in all phase transformations where the transformation temperature is coupled to chemical composition, and inspires new ways to engineer dopant diffusion in phase-coexisting material systems.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
First-Principles Dissociation Pathways of BCl 3 on the Si(100)-2 × 1 Surface
BCl 3 is a promising acceptor precursor for atomic-precision δ-doping of silicon, as it has been observed to rapidly dissociate into boron doped into the silicon surface and surface chlorine, which can be removed upon annealing. The chemical pathway and the resulting kinetics, through which BCl 3 adsorbs and dissociates on silicon, however, have only been partially explained. Here, in this work, we use density functional theory to expand the dissociation reactions of BCl 3 to include reactions that take place across multiple silicon dimer rows and reactions which end in a bare B atom either at the surface, substituted for a surface silicon, or in a subsurface position. We further simulate the resulting scanning tunneling microscopy images for each of these BCl x dissociation fragments, demonstrating that they often display distinct features that may allow for relatively confident experimental identification. Finally, we input the full dissociation pathway for BCl 3 into a kinetic Monte Carlo model, which simulates realistic reaction pathways as a function of environmental conditions, such as the pressure and temperature of dosing. We find that BCl 2 is broadly dominant at low temperatures, while high temperatures and ample space on the silicon surface for dissociation encourage the formation of bridging BCl fragments and B substitutions on the surface. This work provides the chemical mechanisms for understanding atomic-precision doping of Si with B, enabling a number of relevant quantum applications, such as bipolar nanoelectronics, acceptor-based qubits, and superconducting Si.
Campbell, Quinn T. [Sandia National Laboratories (↗
GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)
Fabricating a vertical-channel junction field-effect transistor includes forming an unintentionally doped GaN layer on a bulk GaN layer by metalorganic chemical vapor deposition, forming a Cr/SiO 2 hard mask on the unintentionally doped GaN layer, patterning a fin by electron beam lithography, defining the Cr and SiO 2 hard masks by reactive ion etching, improving a regrowth surface with inductively coupled plasma etching, removing hard mask residuals, regrowing a p-GaN layer, selectively etching the p-GaN layer, forming gate electrodes by electron beam evaporation, and forming source and drain electrodes by electron beam evaporation. The resulting vertical-channel junction field-effect transistor includes a doped GaN layer, an unintentionally doped GaN layer on the doped GaN layer, and a p-GaN regrowth layer on the unintentionally doped GaN layer. Portions of the p-GaN regrowth layer are separated by a vertical channel of the unintentionally doped GaN layer.
Zhao, Yuji↗
Reduction of Pertechnetate by Chemical and Photochemical Approaches and Incorporation of Tc(IV) into Titanium Dioxide
Technetium-99 is a prevalent fission product from nuclear waste. The long half-life (211,000 yr) and environmental mobility of pertechnetate (TcO 4 - ) render Tc particularly challenging to isolate and stabilize. Here, in this study, we present two approaches for development of potential wasteforms using titanium dioxide, TiO 2 . Approach 1 is a low temperature chemical synthesis of TiO 2 doped with Tc(IV) from TcO 4 - intended to mimic the Tc waste stream from the UREX family of separations and removes 98.5 % of the Tc, mainly present as edge-shared Tc(IV) pairs. Approach 2 utilizes TiO 2 to photocatalytically reduce TcO 4 - to Tc(IV) stabilized on the surface of or within the TiO 2 lattice. The %Tc removed from solution and adsorbed to TiO 2 is pH dependent, with the maximum Tc(IV) adsorbed at pH 3–4 as either TcO 2 or edge-sharing Tc(IV) octahedra. The Tc(IV)-TiO 2 composites materials formed by both approaches are suitable for consolidation into a dense wasteform by Hot Isostatic Pressing (HIPing).
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
pH Regulates Ion Dynamics in Carboxylated Mixed Conductors
Coupled ionic and electronic transport underpins processes as diverse as electrochemical energy conversion, biological signaling, and soft adaptive electronics. Yet, how chemical environments such as pH modulate this coupling at the molecular scale remains poorly understood. Here, we show that the protonation state of carboxylated polythiophenes provides precise chemical control over ion dynamics, doping efficiency, solvent uptake, and mechanical response. Using a suite of multimodal operando techniques, supported by simulations, we reveal that pH dictates the balance of cation/anion uptake during electrochemical doping. Mapping across pH uncovers a quasi-nonswelling regime (≈pH 3–3.5) where charge compensation proceeds with minimal volumetric change yet pronounced stiffening. These findings establish molecular acidity as a general strategy to program ionic preference and mechanical stability, offering design principles for pH-responsive mixed conductors and soft electronic materials that couple ionic, electronic, and mechanical functionality.
PH↗
Critical role of oxide anchoring groups in organic electron transport layers for perovskite solar cell stability
Charge transport layers (CTLs) play a critical role in the performance and long-term stability of perovskite solar cells (PSCs) by facilitating efficient charge extraction and providing interfacial stabilization. For organic CTLs, different functional groups have been designed to modulate the interactions with the substrate. Anchoring groups are used to establish strong adhesion to transparent conductive oxides (TCOs) but are not routinely incorporated in organic CTL design. In this study, we investigate the influence of anchoring groups in organic electron transport layers (ETLs) on PSC performance and stability by synthesizing and evaluating two naphthalene diimide (NDI)-based ETLs: NDI-(PhPA) 2 , functionalized with polar phenyl phosphonic acid (PhPA) groups, and NDI-(PhBr) 2 , modified with nonpolar bromophenyl (PhBr) groups. X-ray photoelectron spectroscopy confirms that PhPA functionalization leads to NDIs anchored onto fluorine-doped tin oxide (FTO) following chemical bath deposition, while NDI-(PhBr) 2 shows no detectable surface presence after deposition. We show that NDI-(PhPA) 2 deposits as a thin film on FTO, exhibiting strong adhesion, high solvent resistance, and enhanced light and thermal stability, achieving a maximum device efficiency of 14.3%. Stability assessments conducted under continuous illumination at 25 °C for 200 hours and at 65 °C for 100 hours demonstrate performance on par with TiO 2 -based ETLs. In contrast, NDI-(PhBr) 2 , which lacks strong anchoring interactions, fails to adhere to the FTO surface, resulting in a rapid decrease in efficiency over a few hours, comparable to devices without an ETL. These findings highlight the importance of anchoring groups in organic CTLs for achieving long-term PSC stability under operational conditions.
Kim, Sanggyun [Georgia Institute of Technology, At↗
Tuning counterion chemistry to reduce carrier localization in doped semiconducting carbon nanotube networks
Understanding and controlling the impact that electrostatic interactions have on the transport of injected charge carriers is important for the utilization of pi-conjugated semiconductors in opto-electronic applications. Here, we explore the impact of dopant chemical and electronic structure on the doping efficacy and charge carrier transport in semiconducting single-walled carbon nanotube (s-SWCNT) networks using molecular charge-transfer dopants based on functionalized icosahedral dodecaborane (DDB) clusters. Calculations indicate that localization of electron density on the DDB core reduces the coulombic interactions that contribute to hole localization in the s-SWCNTs, thereby improving charge carrier transport. The enhanced delocalization produces an increase in the electrical conductivity and thermopower at lower charge carrier densities, yielding enhanced thermoelectric transport and a thermoelectric power factor that surpasses the previous best in class for enriched s-SWCNT thin-film networks. This strategy can be applied broadly across pi-conjugated semiconductors to tune and enhance performance in a variety of energy harvesting devices.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗