An aluminum nitride melting technique
Crucible melting and arc melting of aluminum nitride and determination of its melting point
Class, W.↗
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Two source evaporation of uniform thickness, gallium arsenide films.
Crucible arrangements for two source vacuum evaporation of thin GaAs films of uniform thickness
Nicol, W. S.↗
Study of radiation effects in lithium-doped Si using infrared spectroscopy /1 to 50 microns/ and photoconductivity /1 to 10 microns/
Infrared spectroscopic and photoconductivity determinations of electron irradiation effects in Li-doped floating zone and crucible grown silicon
Corelli, J. C.↗
Radiation damage and annealing of lithium-doped silicon solar cells
Evidence has been presented that a lithium-diffused crucible-grown silicon solar cell can be made with better efficiency than the flight-quality n p 10 ohms-cm solar cell. When this lithium cell is exposed to a continuous radiation evironment at 60 C (electron spectrum from gamma rays) it has a higher power output than the N/P cell after a fluence equivalent to 1 MeV. A comparison of annealing of proton- and electron-damage in this lithium cell reveals a decidedly faster rate of recovery and higher level of recoverable power from the proton effects. Therefore, the lithium cell shows a good potential for many space missions where the proton flux is a significant fraction of the radiation field to be encountered.
Statler, R. L.↗
Preliminary terrestrial based experiments on gravity-affected crystal growth
Tin was melted in a heating assembly secured to the arm of a centrifuge. The furnace was allowed to pivot and reach its equilibrium angle of swing for the gravity force being experienced. The crucible was cooled during rotation to allow the growth of single crystals. The crystals were etched for the purpose of observing the growth striations. Slices were removed from some of the crystals to permit observation of the striations in the interior. Visual analyses were made with a scanning electron microscope. Preliminary conclusions relating the appearance of the striations to gravity forces and the affected growth mechanisms are presented. Further experiments that will verify these conclusions and determine other gravity effects are proposed.
Johnston, M. H.↗
Silicon solar cell development and radiation effects study for low temperature and low illumination intensity operation, volume 2
The results are presented of a study to determine the effect of in-situ proton irradiation upon low temperature, low intensity performance of several cell types. The cell types were selected in an attempt to distinguish variations in temperature-dependent radiation resistance which could be attributed to the n-p or p-n structure, diffused or implanted junctions, crucible grown or float-zone type base material, and high or low base resistivity. The results indicate that while expected variations of performance occur at room temperature, all cell types degrade more or less similarly at lower temperatures with normalized degradation becoming increasingly rapid as temperature is reduced. Recommendations for an optimized cell for Jupiter probe use are included along with a definition of the testing required on these cells to insure good performance characteristics.
Kirkpatrick, A. R.↗
Thick film silicon growth techniques
Thick film silicon ribbons were produced by means of the edge-defined, film-fed growth (EFG) technique. EFG is a process by which single crystals may be grown having a shape controlled by the outside dimensions of a die, the growth taking place from an extremely thin film of liquid fed by capillary action from a crucible below. The principal problem to be overcome in the application of this process to the growth of thick film silicon ribbon relates to the material, such as the shaping die. For the method to operate, this die material must be wet by the liquid silicon. To preserve semiconductor quality, the liquid silicon must not react significantly with the die material. The most promising die material for this application appears to be SiC and SiC-SiO2 admixture. In this case good wetting occurs between the molten silicon and the SiC. C is a relatively unharmful contaminant of Si and additions of quartz to SiC are found to decrease the extent of reaction.
Bates, H. E.↗
A Study of the Growth of Single Crystals
Research on the growth of single crystals of the III-V compound indium antimonide was pursued in order to gain a firsthand knowledge of some factors which govern the growth of single crystals of this compound. These studies were conducted using a standard Czochralski crystal pulling furnace. This type of furnace allows crystals to be formed without being constrained to a crucible. Several factors were found to have a large detrimental effect on the growth of single crystals of indium antimonide, the most important of which seems to be the degree to which the environment surrounding the crystal during growth can be controlled. Ways to overcome these effects were determined and are outlined.
Desmet, D. J.↗
Development of a Thick-film Silicon Ribbon Growth Technique for Application to Large-area Solar Cells and Arrays
A new technique is described for growth of large-area silicon ribbons. This technique is an edge-defined, film-fed growth process by which single crystals can be grown having a shape controlled by the outside dimensions of a shaping die, growth taking place from an extremely thin film of liquid fed by capillary action from a crucible below. The material from which the die is fabricated is very critical to the process. The die must be wet by the silicon, but adverse impurities must not be introduced into the silicon, and the die must not become degraded by the molten silicon. A breakthrough in die fabrication that has allowed the growth of silicon ribbons having dimensions of 1 cm by 30 cm with a thickness of 0.7 mm is described. The implications of this significant advancement with respect to development of photovoltaic solar arrays for wide-scale terrestrial solar-to-electric energy conversion systems are discussed.
Berman, P. A.↗
Infrared spectra of group III A metal oxides
The measurement of infrared frequencies of metal-oxygen species which could be formed in the matrix and to investigate with an oxygen-18 enrichment study the controversy on the vibrational assignments for the suboxide. Several new molecules, Al3O2, Ga3O, In3O, In4O2, IntaO, IntaO2, and In2WO4, were found by mass spectrometric sampling to exist in extremely minor concentrations in the vapor phase. The latter three species were formed by reaction with the crucible materials and were unimportant for an infrared analysis. The infrared spectroscopic measurements were obtained by the matrix isolation technique of molecular beam sampling. The MO2 species were formed by direct reaction between metal and O2 in the matrix. A C2v structure and an O-M-O bond angle near 40 deg was favored for these molecules by analogy with a similar investigation of the alkali metals. The vibrational frequencies which were determined are given.
Lynch, D. A., Jr.↗
Voltage and power relationships in lithium-containing solar cells.
Photovoltaic characteristics have been measured on a large number of crucible-grown lithium-containing solar cells irradiated by 1-MeV electrons to fluences ranging from 3 x 10 to the 13th power to 3 x 10 to the 15th power electrons per sq cm. These measurements have established empirical relationships between cell photovoltaic parameters and lithium donor density gradient. Short-circuit current and maximum power measured immediately after irradiation decrease logarithmically with lithium gradient. Open-circuit voltage increases logarithmically with lithium gradient both immediately after irradiation and after recovery, the degree of recovery being strongly gradient-dependent at high fluence. As a result, the maximum power and the power at 0.43 V after recovery from 3 x 10 to the 15th power electrons per sq cm increase with increasing lithium gradient.
Faith, T. J.↗
Rapid method for determining nitrogen in tantalum and niobium alloys
Adaptation of commercial instrument which measures nitrogen and oxygen in steel gave results in less than four minutes. Sample is heated in helium atmosphere in single-use graphite crucible. Platinum flux facilitates melting of sample. Released gases are separated chromatographically and measured in thermal-conductivity cell.
Merkle, E. J.↗
Comparison of inert-gas-fusion and modified Kjeldahl techniques for determination of nitrogen in niobium alloys
This report compares results obtained for the determination of nitrogen in a selected group of niobium-base alloys by the inert-gas-fusion and the Kjeldahl procedures. In the inert-gas-fusion procedure the sample is heated to approximately 2700 C in a helium atmosphere in a single-use graphite crucible. A platinum flux is used to facilitate melting of the sample. The Kjeldahl method consisted of a rapid decomposition with a mixture of hydrofluoric acid, phosphoric acid, and potassium chromate; distillation in the presence of sodium hydroxide; and highly sensitive spectrophotometry with nitroprusside-catalyzed indophenol. In the 30- to 80-ppm range, the relative standard deviation was 5 to 7 percent for the inert-gas-fusion procedure and 2 to 8 percent for the Kjeldahl procedure. The agreement of the nitrogen results obtained by the two techniques is considered satisfactory.
Merkle, E. J.↗
Resistance of nickel-chromium-aluminum alloys to cyclic oxidation at 1100 C and 1200 C
Nickel-rich alloys in the Ni-Cr-Al system were evaluated for cyclic oxidation resistance in still air at 1,100 and 1,200 C. A first approximation oxidation attack parameter Ka was derived from specific weight change data involving both a scaling growth constant and a spalling constant. An estimating equation was derived with Ka as a function of the Cr and Al content by multiple linear regression and translated into countour ternary diagrams showing regions of minimum attack. An additional factor inferred from the regression analysis was that alloys melted in zirconia crucibles had significantly greater oxidation resistance than comparable alloys melted otherwise.
Barrett, C. A.↗
Dendritic web - A viable material for silicon solar cells
The dendritic web process is a technique for growing thin silicon ribbon from liquid silicon. The material is suitable for solar cell fabrication and, in fact, cells fabricated on web material are equivalent in performance to cells fabricated on Czochralski-grown material. A recently concluded study has delineated the thermal requirements for silicon web crucibles, and a detailed conceptual design has been developed for a laboratory growth apparatus.
Seidensticker, R. G.↗
Manufacturing unique glasses in space
An air suspension melting technique is described for making glasses from substances which to date have been observed only in the crystalline condition. A laminar flow vertical wind tunnel was constructed for suspending oxide melts that were melted using the energy from a carbon dioxide laser beam. By this method it is possible to melt many high-melting-point materials without interaction between the melt and crucible material. In addition, space melting permits cooling to suppress crystal growth. If a sufficient amount of under cooling is accompanied by a sufficient increase in viscosity, crystallization will be avoided entirely and glass will result.
Happe, R. P.↗
Web-dendritic ribbon growth
A web furnace was constructed for pulling dendritic-web samples. The effect of changes in the furnace thermal geometry on the growth of dendritic-web was studied. Several attempts were made to grow primitive dendrites for use as the dendritic seed crystals for web growth and to determine the optimum twin spacing in the dendritic seed crystal for web growth. Mathematical models and computer programs were used to determine the thermal geometries in the susceptor, crucible melt, meniscus, and web. Several geometries were determined for particular furnace geometries and growth conditions. The information obtained was used in conjunction with results from the experimental growth investigations in order to achieve proper conditions for sustained pulling of two dendrite web ribbons. In addition, the facilities for obtaining the following data were constructed: twin spacing, dislocation density, web geometry, resistivity, majority charge carrier type, and minority carrier lifetime.
Hilborn, R. B., Jr.↗
Method of crystallization
A method is described for refining or growing bulk single crystals in an environment substantially free of gravity. The base material is suspended, positioned, and shaped as a containerless melt by wetting forces. Because no crucible is required, high temperature refractory materials can be processed.
Walter, H. U.↗