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At least 163 records · Page 9

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NASA NTRS1981

Silicon Ingot Casting - Heat Exchanger Method (HEM). Multi-Wire Slicing - Fixed Abrasive Slicing Technique (Fast). Phase 4 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-Cost Solar Array Project

The crystallinity of large HEM silicon ingots as a function of heat flow conditions is investigated. A balanced heat flow at the bottom of the ingot restricts spurious nucleation to the edge of the melted-back seed in contact with the crucible. Homogeneous resistivity distribution over all the ingot has been achieved. The positioning of diamonds electroplated on wirepacks used to slice silicon crystals is considered. The electroplating of diamonds on only the cutting edge is described and the improved slicing performance of these wires evaluated. An economic analysis of value added costs of HEM ingot casting and band saw sectioning indicates the projected add on cost of HEM is well below the 1986 allocation.

Schmid, F.↗

NASA NTRS1992

Thick strings, the liquid crystal blue phase, and cosmological large-scale structure

A phenomenological model based on the liquid crystal blue phase is proposed as a model for a late-time cosmological phase transition. Topological defects, in particular thick strings and/or domain walls, are presented as seeds for structure formation. It is shown that the observed large-scale structure, including quasi-periodic wall structure, can be well fitted in the model without violating the microwave background isotropy bound or the limits from induced gravitational waves and the millisecond pulsar timing. Furthermore, such late-time transitions can produce objects such as quasars at high redshifts. The model appears to work with either cold or hot dark matter.

Luo, Xiaochun↗

NASA NTRS1988

Imaging Of Directional-Solidification Interfaces

X-ray and gamma-ray technique developed at NASA Langley Research Center enables melt/solid interface to be observed visually during crystal growth by directional solidification in Bridgman furnace. Technique used to observe movement and shape of interface in germanium and in lead tin telluride. Valuable tool in efforts to grow seeded semiconductor materials in Bridgman furnaces.

Fripp, Archibald L., Jr.↗

NASA NTRS1988

A review of melt and vapor growth techniques for polydiacetylene thin films for nonlinear optical applications

Methods for the growth of polydiacetylene thin films by melt and vapor growth and their subsequent polymerization are summarized. Films with random orientations were obtained when glass or quartz were used as substrates in the vapor growth process. Oriented polydiacetylene films were fabricated by the vapor deposition of diacetylene monomer onto oriented polydiacetylene on a glass substrate and its subsequent polymerization by UV light. A method for the growth of oriented thin films by a melt-shear growth process as well as a method of film growth by seeded recrstallization from the melt between glass plates, that may be applied to the growth of polydiacetylene films, are described. Moreover, a method is presented for the fabrication of single crystal thin films of polyacetylenes by irradiation of the surface of diacetylene single crystals to a depth between 100 and 2000 angstroms.

Penn, B. G.↗

NASA NTRS1998

Experiment 13: The Study of Dopant Segregation Behavior During the Growth of GaAs in Microgravity on USML-2

An investigation into the segregation behavior of selenium doped gallium arsenide (Se/GaAs) during directional solidification in the microgravity environment was conducted using the Crystal Growth Furnace (CGF) aboard the second United States Microgravity Laboratory (USML-2). Two crystals were successfully processed on USML-2, which lasted from October 20 to November 7, 1995. The first sample was processed for 67 hours, 45 minutes (MET 5/04:53:45-8/00:23:50) and included 19 hours of growth at 0.5 microns/sec which yielded 3.42 cm of sample length, and 5 hours of growth at 1.5 microns/sec which yielded 2.7 cm of sample. During the second experiment, the furnace temperature was adjusted to move the melt-solid interface position towards the hot end of the furnace. The second sample was processed for 50 hours, 10 minutes (MET 8/18:48:49-10/21:58:54) and included 11 hours of growth at 0.5 microns/sec which yielded 1.98 cm of sample, and 1 hour, 25 minutes of growth at 5.0 microns/sec which yielded 2.6 cm of sample. This sample provides an order of magnitude change in growth rate and reproduces one of the growth rates used during USML-1. In contrast to the results from USML-1, no voids were present in either crystal grown on USML-2. The absence of voids in either sample indicates that growth rate changes alone were not responsible for the formation of voids found in the crystals grown on USML-1. Sections of the ground-based and flight crystals grown on USML-2 were cut and polished. All of the interface demarcation lines expected from the current pulse interface demarcation (CPID) system have been identified. These measurements have been analyzed for interface positions, interface shapes, and growth rates. Using a newly developed technique, based on experimental and numerical results, the seeding interface reproducibility from run to run was <= 2.5 mm. The seeding interface position could be controllably moved, with respect to the furnace zones, by adjusting the control set points of the heating zones. The interface shapes flattened slightly as the interface position moved closer to the hot zone but was always an unfavorable concave into the solid shape. The growth rate was found to equal the furnace translation rate, after a 2 -hour transient, for growth rates <= 1.0 microns/sec. Segregation measurements for the ground-based crystals are indicative of complete mixing behavior, as expected. Segregation measurements of the flight crystals are still in progress.

Matthiesen, David H.↗

NASA NTRS1984

Proposed Technique of Crystal-Ribbon Growth

Technique for silicon crystal-ribbon growth from crucible, two inert wettable filaments dipped into silicon melt to guide growth of silicon sheet. Filaments clamped in place and tilted slightly away from each other and seed ribbon lowered into contact with melt to establish menisci between filaments.

Thornhill, J. W.↗

NASA NTRS1990

Method of forming three-dimensional semiconductor structures

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow columns of metal silicide embedded in a matrix of single crystal, epitaxially grown silicon. Higher substrate temperatures and lower deposition rates yield larger columns that are farther apart while more silicon produces smaller columns. Column shapes and locations are selected by seeding the substrate with metal silicide starting regions. A variety of three-dimensional, exemplary electronic devices are disclosed.

Fathauer, Robert W.↗

NASA NTRS1993

Measurements and computational analysis of heat transfer and flow in a simulated turbine blade internal cooling passage

Visual and quantitative information was obtained on heat transfer and flow in a branched-duct test section that had several significant features of an internal cooling passage of a turbine blade. The objective of this study was to generate a set of experimental data that could be used to validate computer codes for internal cooling systems. Surface heat transfer coefficients and entrance flow conditions were measured at entrance Reynolds numbers of 45,000, 335,000, and 726,000. The heat transfer data were obtained using an Inconel heater sheet attached to the surface and coated with liquid crystals. Visual and quantitative flow field results using particle image velocimetry were also obtained for a plane at mid channel height for a Reynolds number of 45,000. The flow was seeded with polystyrene particles and illuminated by a laser light sheet. Computational results were determined for the same configurations and at matching Reynolds numbers; these surface heat transfer coefficients and flow velocities were computed with a commercially available code. The experimental and computational results were compared. Although some general trends did agree, there were inconsistencies in the temperature patterns as well as in the numerical results. These inconsistencies strongly suggest the need for further computational studies on complicated geometries such as the one studied.

Russell, Louis M.↗

NASA NTRS1993

Measurements and computational analysis of heat transfer and flow in a simulated turbine blade internal cooling passage

Russell, Louis M.↗

NASA NTRS2002

Method of Forming Three-Dimensional Semiconductors Structures

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow columns of metal silicide embedded in a matrix of single crystal, epitaxially grown silicon. Higher substrate temperatures and lower deposition rates yield larger columns that are farther apart while more silicon produces smaller columns. Column shapes and locations are selected by seeding the substrate with metal silicide starting regions. A variety of 3-dimensional, exemplary electronic devices are disclosed.

Fathauer, Robert W.↗

NASA NTRS1982

Liquid encapsulated Czochralski growth of low dislocation GaAs

The availability of high-quality, large-diameter GaAs substrates is key to the successful development and production of high-speed GaAs devices and high-efficiency GaAs solar cells. The liquid encapsulated Czochralski (LEC) technique has provided a means for producing large-diameter GaAs. Progress in improving the LEC growth process which has resulted in 3-inch GaAs crystals with exceptionally low dislocation densities and reduced propensity for twinning is reported. Undoped, semi-insulating GaAs ingots were grown in a Melbourn high-pressure LEC system. The effects of seed perfection, seed necking, cone angle, melt stoichiometry, ambient pressure, thickness of the B2O3 encapsulating layer, and diameter control on the dislocation density were investigated. The material was characterized by preferential etching and X-ray topography. It is shown that 3-inch diameter substrates can be produced with dislocation densities as low as 6000 per sq cm through proper selection and control of growth parameters. Also, the incidence of twinning can be reduced significantly by growing from slightly As-rich melts.

Kirkpatrick, C. G.↗

NASA NTRS1998

Measurements of Heat Transfer, Flow, and Pressures in a Simulated Turbine Blade Internal Cooling Passage

An experimental study was made to obtain quantitative information on heat transfer, flow, and pressure distribution in a branched duct test section that had several significant features of an internal cooling passage of a turbine blade. The objective of this study was to generate a set of experimental data that could be used for validation of computer codes that would be used to model internal cooling. Surface heat transfer coefficients and entrance flow conditions were measured at nominal entrance Reynolds numbers of 45,000, 335,000, and 726,000. Heat transfer data were obtained by using a steady-state technique in which an Inconel heater sheet is attached to the surface and coated with liquid crystals. Visual and quantitative flow-field data from particle image velocimetry measurements for a plane at midchannel height for a Reynolds number of 45,000 were also obtained. The flow was seeded with polystyrene particles and illuminated by a laser light sheet. Pressure distribution measurements were made both on the surface with discrete holes and in the flow field with a total pressure probe. The flow-field measurements yielded flow-field velocities at selected locations. A relatively new method, pressure sensitive paint, was also used to measure surface pressure distribution. The pressure paint data obtained at Reynolds numbers of 335,000 and 726,000 compared well with the more standard method of measuring pressures by using discrete holes.

Russell, Louis M.↗

NASA NTRS1994

Development of lasers optimized for pumping Ti:Al2O3 lasers

Laboratory demonstrations that were completed included: (1) an all-solid-state, broadly tunable, single-frequency, Ti:Al2O3 master oscillator, and (2) a technique for obtaining 'long' (nominally 100- to 200-ns FWHM) laser pulses from a Q-switched, Nd oscillator at energy levels commensurate with straightforward amplification to the joule level. A diode-laser-pumped, Nd:YLF laser with intracavity SHG was designed, constructed, and evaluated. With this laser greater than 0.9 W of CW, output power at 523.5 nm with 10 W of diode-laser pump power delivered to the Nd:YLF crystal was obtained. With this laser as a pump source, for the first time, to our knowledge, an all solid-state, single frequency, Ti:Al203 laser with sufficient output power to injection seed a high-energy oscillator over a 20-nm bandwidth was demonstrated. The pulsed laser work succeeded in demonstrating pulse-stretching in a Q-switched Nd:YAG oscillator. Pulse energies greater than 50-mJ were obtained in pulses with 100- to 200-ns pulsewidths (FWHM).

Rines, Glen A.↗

NASA NTRS2005

A Further Investigation of the Exceptional Zircon Aggregate in Lunar Thin Section 73235,82

Introduction: Smith et al. described an exceptional zircon assemblage in thin section 82 from lunar breccia 73235 which, in transmitted light, resembles a cluster of pomegranate seeds, situated in a clast dominated by bytownite (Fig.1). They reported that high-contrast back-scattered electron (BSE) images of the zircon assemblage clearly show an overgrowth around most of the crystals. Most significantly these authors reported that the age of the rims of ca 4.18Ga is 120 million years younger than age of the interiors, dated at ca 4.31Ga. Smith et al. concluded that ca 4.31 billion years ago a relatively large (500+micron) zircon crystallized within a clast of Ca rich plagioclase. The zircon was fractured into numerous smaller crystals and was subsequently overgrown by a second generation of zircon at approximately 4.18Ga.

Pidgeon, R. T.↗

NASA NTRS1995

Research support for cadmium telluride crystal growth

The growth of single crystals of zinc selenide was carried out by both closed ampoule physical vapor transport and effusive ampoule physical vapor transport (EAPVT). The latter technique was shown to be a much more efficient method for the seeded growth of zinc selenide, resulting in higher transport rates. Furthermore, EAPVT work on CdTe has shown that growth onto (n 11) seeds is advantageous for obtaining reduced twinning and defect densities in II-VI sphalerite materials.

Rosenberger, Franz↗

NASA NTRS1995

Growth of zinc selenide crystals by physical vapor transport in microgravity

The growth of single crystals of zinc selenide was carried out by both closed ampoule physical vapor transport and effusive ampoule physical vapor transport (EAPVT). The latter technique was shown to be a much more efficient method for the seeded growth of zinc selenide, resulting in higher transport rates. Furthermore, EAPVT work on CdTe has shown that growth onto /n11/ seeds is advantageous for obtaining reduced twinning and defect densities in II-VI sphalerite materials.

Rosenberger, Franz↗

NASA NTRS1984

A new dimension in space experimentation

Based on the Space Shuttle's ability to place the Long Duration Exposure Facility (LDEF) in space and later retrieve it, a new opportunity for scientific exploration in space is studied. The LDEF which is scheduled to be placed in orbit in 1984 and returned to earth after one year in space is described. It is a large unmanned facility 9 m in length and 4 m in diameter and flying at an 482 km orbit. It is pointed out that the LDEF allows investigators to have their experiments returned to them for in-depth analysis, eliminates the need for complex systems to transmit data to earth, does not require propulsion equipment, and increases the kinds of experiments that can be performed. A description is given for each of the five categories of the experiments provided by the LDEF: (1) evaluation of the impact of space environments on materials used for thermal coatings on polymer-matrix composites, on optics, and on quartz-crystal oscillators; (2) experiments with unique heat pipe systems having the goal to achieve temperature control of + or - 6 F; (3) evaluation of solar array materials; (4) growth of single crystals of lead sulfite, calcium carbonate, and synthetic metals; and (5) scientific experiments to determine the chemistry of micrometeoroids and to identify isotopes in interstellar gas and ultra-heavy cosmic ray nuclei. Finally, the project SEEDS (Space Exposed Experiment Developed for Students) which experiments with tomato seeds behavior in zero gravity is discussed.

Sandy, M. L.↗

NASA NTRS1997

Interface Shape and Growth Rate Analysis of Se/GaAs Bulk Crystals Grown in the NASA Crystal Growth Furnace (CGF)

Selenium-doped gallium arsenide, Se/GaAs, bulk crystals have been grown on earth using NASA's crystal growth furnace (CGF) in preparation for microgravity experimentation on the USML-2 spacelab mission. Peltier cooling pulses of 50 ms duration, 2040 A magnitude, and 0.0033 Hz frequency were used to successfully demark the melt-solid interface at known times during the crystal growth process. Post-growth characterization included interface shape measurement, growth rate calculation, and growth rate transient determinations. It was found that the interface shapes were always slightly concave into the solid. The curvature of the seeding interfaces was typically 1.5 mm for the 15 mm diameter samples. This was in agreement with the predicted interface shapes and positions relative to the furnace determined using a numerical model of the sample/ampoule/cartridge assembly (SACA).

Bly, J. M.↗