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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Modeling of Multi-Loops Related Device Turn-On Overvoltage in 3L-ANPC Converters

The analytical model for the device drain-source turn-on overvoltage in three-level active neutral point clamped (3L-ANPC) converters is established in this paper. Considering the two commutation loops in the converter, the relationship between the overvoltage and the loop inductances is evaluated. The line switching frequency device usually exhibits higher overvoltage, while the high switching frequency device is not strongly influenced by the multiple loops. A 500 kVA 3L-ANPC converter using SiC MOSFETs is tested, and the model is verified with the experimental results.

SiC MOSFET↗
NASA NTRS1979

Low-speed wind-tunnel parametric investigation of flight spoilers as trailing-vortex-alleviation devices on a transport aircraft model

The trailing-wing sensor technique was used in the Langley V/STOL tunnel to determine the effectiveness of 11 combinations of the existing flight-spoiler segments on a jumbo-jet transport aircraft model when they were deflected as trailing-vortex-alleviation devices. All 11 of the flight-spoiler configurations investigated were effective in reducing the induced rolling moment on the trailing model. This investigation is an extension of earlier wind-tunnel and flight tests which showed that the existing flight spoilers on the jumbo-jet aircraft can be used as effective trailing-vortex-alleviation devices. Essentially, all of the reduction in induced rolling moment on the trailing-wing model was realized at a spoiler deflection of 45 deg for single-spoiler configurations, 30 for two-spoiler configurations, and 15 deg for both the three- and four-spoiler configurations. Of the 11 flight-spoiler configurations investigated, the most promising configuration for trailing-vortex abatement on the jumbo-jet aircraft appears to be the three inboard flight spoilers deflected 15 deg.

Croom, D. R.↗
NASA NTRS1988

Modelling and Control of an Annular Momentum Control Device

The results of a modelling and control study for an advanced momentum storage device supported on magnetic bearings are documented. The control challenge posed by this device lies in its dynamics being such a strong function of flywheel rotational speed. At high rotational speed, this can lead to open loop instabilities, resulting in requirements for minimum and maximum control bandwidths and gains for the stabilizing controllers. Using recently developed analysis tools for systems described by complex coefficient differential equations, the closed properties of the controllers were analyzed and stability properties established. Various feedback controllers are investigated and discussed. Both translational and angular dynamics compensators are developed, and measures of system stability and robustness to plant and operational speed variations are presented.

Downer, James R.↗
NASA NTRS1978

Some observations on the mechanism of aircraft wing rock

A pressure scale model of Northrop F-5A was tested in NASA Ames Research Center Eleven-Foot Transonic Tunnel to simulate the wing rock oscillations in a transonic maneuver. For this purpose, a flexible model support device was designed and fabricated which allowed the model to oscillate in roll at the scaled wing rock frequency. Two tunnel entries were performed to acquire the pressure (steady state and fluctuating) and response data when the model was held fixed and when it was excited by flow to oscillate in roll. Based on these data, a limit cycle mechanism was identified which supplied energy to the aircraft model and caused the Dutch roll type oscillations, commonly called wing rock. The major origin of the fluctuating pressures which contributed to the limit cycle was traced to the wing surface leading edge stall and the subsequent lift recovery. For typical wing rock oscillations, the energy balance between the pressure work input and the energy consumed by the model aerodynamic and mechanical damping was formulated and numerical data presented.

Hwang, C.↗
NASA NTRS1979

Some observations on the mechanism of aircraft wing rock

A scale model of the Northrop F-5A was tested in NASA Ames Research Center Eleven-Foot Transonic Tunnel to simulate the wing rock oscillations in a transonic maneuver. For this purpose, a flexible model support device was designed and fabricated, which allowed the model to oscillate in roll at the scaled wing rock frequency. Two tunnel entries were performed to acquire the pressure (steady state and fluctuating) and response data when the model was held fixed and when it was excited by flow to oscillate in roll. Based on these data, a limit cycle mechanism was identified, which supplied energy to the aircraft model and caused the Dutch roll type oscillations, commonly called wing rock. The major origin of the fluctuating pressures that contributed to the limit cycle was traced to the wing surface leading edge stall and the subsequent lift recovery. For typical wing rock oscillations, the energy balance between the pressure work input and the energy consumed by the model's aerodynamic and mechanical damping was formulated and numerical data presented.

Hwang, C.↗
NASA NTRS1984

The 3SPACE digitizer: A new input device for solid geometry modeling

The 3SPACE Digitizer is a derivation of SPASYN, which is a patented magnetic transducing system offering an accurate method of calculating the location of one object relative to another. SPASYN uses low-frequency magnetic fields to measure both the position and orientation of its sensor relative to its transmitter. The 3SPACE Digitizer unit consists of a system's electronics unit, a model table, a stylus, and a keypad. In operation, the 3SPACE Digitizer determines the X, Y, Z coordinates of any point located on a low-conductive, three-dimensional model. This data, along with the orientation of the Digitizer's stylus, is immediately available for transmission to a host computer or graphics terminal. Digitization is effected by touching the point to be measured with the tip of a handheld stylus. The 3SPACE Digitizer presents new opportunities for interacting with computers in a large number of engineering and scientific applications. Developed from proven military technology, the 3SPACE Digitizer significantly simplifies three-dimensional digitization and overcomes many of the problems that once plagued such procedures. Its ability to digitize solid objects makes it a valuable new tool for computer-aided design and manufacturing.

Scully, J.↗
NASA NTRS1993

Piezoelectric devices for vibration suppression: Modeling and application to a truss structure

For a space structure assembled from truss members, an effective way to control the structure may be to replace the regular truss elements by active members. The active members play the role of load carrying elements as well as actuators. A piezo strut, made of a stack of piezoceramics, may be an ideal active member to be integrated into a truss space structure. An electrically driven piezo strut generates a pair of forces, and is considered as a two-point actuator in contrast to a one-point actuator such as a thruster or a shaker. To achieve good structural vibration control, sensing signals compatible to the control actuators are desirable. A strain gage or a piezo film with proper signal conditioning to measure member strain or strain rate, respectively, are ideal control sensors for use with a piezo actuator. The Phase 0 CSI Evolutionary Model (CEM) at NASA Langley Research Center used cold air thrusters as actuators to control both rigid body motions and flexible body vibrations. For the Phase 1 and 2 CEM, it is proposed to use piezo struts to control the flexible modes and thrusters to control the rigid body modes. A tenbay truss structure with active piezo struts is built to study the modeling, controller designs, and experimental issues. In this paper, the tenbay structure with piezo active members is modelled using an energy method approach. Decentralized and centralized control schemes are designed and implemented, and preliminary analytical and experimental results are presented.

Won, Chin C.↗
NASA NTRS1955

Emergency Spin-Recovery Device for the 1/18-Scale Model of the Ryan X-13 Airplane as Determined from Tests in the Langley 20-Foot Free-Spinning Tunnel

An investigation has been conducted in the Langley 20-foot free-spinning tunnel on a l/18-scale model of the Ryan X-13 airplane to determine the size parachute required for emergency-spin recovery during demonstration spins. Test results for erect spins indicate that a stable 12.73-foot-diameter parachute with a drag coefficient of 1.11 (based on the 12.73-foot projected diameter) is the minimum size required to insure satisfactory recovery in an emergency. The use of a stable parachute is recommended. Test results for inverted spins indicate that the l2.75-foot-diameter parachute is also satisfactory to terminate inverted spins.

Bowman, James S., Jr.↗
NASA NTRS1987

Charge-coupled-device X-ray detector performance model

A model that predicts the performance characteristics of CCD detectors being developed for use in X-ray imaging is presented. The model accounts for the interactions of both X-rays and charged particles with the CCD and simulates the transport and loss of charge in the detector. Predicted performance parameters include detective and net quantum efficiencies, split-event probability, and a parameter characterizing the effective thickness presented by the detector to cosmic-ray protons. The predicted performance of two CCDs of different epitaxial layer thicknesses is compared. The model predicts that in each device incomplete recovery of the charge liberated by a photon of energy between 0.1 and 10 keV is very likely to be accompanied by charge splitting between adjacent pixels. The implications of the model predictions for CCD data processing algorithms are briefly discussed.

Bautz, M. W.↗
NASA NTRS1989

Impact of device level faults in a digital avionic processor

This study describes an experimental analysis of the impact of gate and device-level faults in the processor of a Bendix BDX-930 flight control system. Via mixed mode simulation, faults were injected at the gate (stuck-at) and at the transistor levels and, their propagation through the chip to the output pins was measured. The results show that there is little correspondence between a stuck-at and a device-level fault model, as far as error activity or detection within a functional unit is concerned. In so far as error activity outside the injected unit and at the output pins are concerned, the stuck-at and device models track each other. The stuck-at model, however, overestimates, by over 100 percent, the probability of fault propagation to the output pins. An evaluation of the Mean Error Durations and the Mean Time Between Errors at the output pins shows that the stuck-at model significantly underestimates (by 62 percent) the impact of an internal chip fault on the output pins. Finally, the study also quantifies the impact of device fault by location, both internally and at the output pins.

Suk, Ho Kim↗
NASA NTRS1988

Impact of device level faults in a digital avionic processor

This paper describes an experimental analysis of the impact of gate and device-level faults in the processor of a flight control system. Via mixed mode simulation faults were injected both at the gate (stuck-at) and at the transistor levels, and their propagation through the chip to the output pins was measured. The results show that there is little correspondence between a stuck-at and a device-level fault model insofar as error activity or detection within a functional unit is concerned. Insofar as error activity outside the injected unit and at the output pins are concerned, the stuck-at and device models track each other, although the stuck-at model overestimates, by over one hundred percent, the probability of fault propagation to the output pins. The stuck-at model significantly underestimates the impact of an internal chip fault on the output pins.

Kim, S.↗
NASA NTRS1976

Low-speed wind-tunnel investigation of various segments of flight spoilers as trailing-vortex-alleviation devices on a transport aircraft model

An investigation was made in the Langley V/STOL tunnel to determine, by the trailing wing sensor technique, the effectiveness of various segments of the existing flight spoilers on a transport aircraft model when they were deflected as trailing-vortex-alleviation devices. The four combinations of flight-spoiler segments investigated were effective in reducing the induced rolling moment on the trailing wing model by as much as 40 to 50 percent at distances behind the transport model of from about 7 to 27 transport wing spans, 27 spans being the downstream limit of distances used in this investigation. Results obtained at about 7 wing spans downstream for two of the spoiler configurations indicate that essentially all the reduction in induced rolling moment on the trailing wing model was realized at a spoiler deflection of about 30 deg.

Croom, D. R.↗
NASA NTRS1972

An eclectic integrated circuit reliability model

A general form of a comprehensive reliability modeling rationale was formulated for the integrated circuit. Integrated device failure models amenable to long term applications were investigated.

Fetcher, B. C.↗
NASA NTRS1987

Microwave characterization and modeling of GaAs/AlGaAs heterojunction bipolar transistors

The characterization and modeling of a microwave GaAs/AlGaAs heterojunction Bipolar Transistor (HBT) are discussed. The de-embedded scattering parameters are used to derive a small signal lumped element equivalent circuit model using EEsof's Touchstone software package. Each element in the equivalent circuit model is shown to have its origin within the device. The model shows good agreement between the measured and modeled scattering parameters over a wide range of bias currents. Further, the MAG (maximum available power gain) and the h sub 21 (current gain) calculated from the measured data and those predicted by the model are also in good agreement. Consequently, the model should also be capable of predicting the f sub max and the f sub T of other HBTs.

Simons, Rainee N.↗
NASA NTRS1989

Spike train generation and current-to-frequency conversion in silicon diodes

A device physics model is developed to analyze spontaneous neuron-like spike train generation in current driven silicon p(+)-n-n(+) devices in cryogenic environments. The model is shown to explain the very high dynamic range (0 to the 7th) current-to-frequency conversion and experimental features of the spike train frequency as a function of input current. The devices are interesting components for implementation of parallel asynchronous processing adjacent to cryogenically cooled focal planes because of their extremely low current and power requirements, their electronic simplicity, and their pulse coding capability, and could be used to form the hardware basis for neural networks which employ biologically plausible means of information coding.

Coon, D. D.↗
NASA NTRS1998

Computational Nanoelectronics and Nanotechnology at NASA ARC

Both physical and economic considerations indicate that the scaling era of CMOS will run out of steam around the year 2010. However, physical laws also indicate that it is possible to compute at a rate of a billion times present speeds with the expenditure of only one Watt of electrical power. NASA has long-term needs where ultra-small semiconductor devices are needed for critical applications: high performance, low power, compact computers for intelligent autonomous vehicles and Petaflop computing technology are some key examples. To advance the design, development, and production of future generation micro- and nano-devices, IT Modeling and Simulation Group has been started at NASA Ames with a goal to develop an integrated simulation environment that addresses problems related to nanoelectronics and molecular nanotechnology. Overview of nanoelectronics and nanotechnology research activities being carried out at Ames Research Center will be presented. We will also present the vision and the research objectives of the IT Modeling and Simulation Group including the applications of nanoelectronic based devices relevant to NASA missions.

Saini, Subhash↗
NASA NTRS1998

Computational Nanoelectronics and Nanotechnology at NASA ARC

Both physical and economic considerations indicate that the scaling era of CMOS will run out of steam around the year 2010. However, physical laws also indicate that it is possible to compute at a rate of a billion times present speeds with the expenditure of only one Watt of electrical power. NASA has long-term needs where ultra-small semiconductor devices are needed for critical applications: high performance, low power, compact computers for intelligent autonomous vehicles and Petaflop computing technolpgy are some key examples. To advance the design, development, and production of future generation micro- and nano-devices, IT Modeling and Simulation Group has been started at NASA Ames with a goal to develop an integrated simulation environment that addresses problems related to nanoelectronics and molecular nanotecnology. Overview of nanoelectronics and nanotechnology research activities being carried out at Ames Research Center will be presented. We will also present the vision and the research objectives of the IT Modeling and Simulation Group including the applications of nanoelectronic based devices relevant to NASA missions.

Saini, Subhash↗
NASA NTRS1998

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

The continued down-scaling of electronic devices, in particular the commercially dominant MOSFET, will force a fundamental change in the process of new electronics technology development in the next five to ten years. The cost of developing new technology generations is soaring along with the price of new fabrication facilities, even as competitive pressure intensifies to bring this new technology to market faster than ever before. To reduce cost and time to market, device simulation must become a more fundamental, indeed dominant, part of the technology development cycle. In order to produce these benefits, simulation accuracy must improve markedly. At the same time, device physics will become more complex, with the rapid increase in various small-geometry and quantum effects. This work describes both an approach to device simulator development and a physical model which advance the effort to meet the tremendous electronic device simulation challenge described above. The device simulation approach is to specify the physical model at a high level to a general-purpose (but highly efficient) partial differential equation solver (in this case PROPHET, developed by Lucent Technologies), which then simulates the model in 1-D, 2-D, or 3-D for a specified device and test regime. This approach allows for the rapid investigation of a wide range of device models and effects, which is certainly essential for device simulation to catch up with, and then stay ahead of, electronic device technology of the present and future. The physical device model used in this work is the density-gradient (DG) quantum correction to the drift-diffusion model [Ancona, Phys. Rev. B 35(5), 7959 (1987)]. This model adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We used the DG model in 1-D and 2-D (for the first time) to simulate both bipolar and unipolar devices. Simulations of heavily-doped, short-base diodes indicated that the DG quantum corrections do not have a large effect on the IN characteristics of electronic devices without heteroj unction s. On the other hand, ultra-small MOSFETs certainly exhibit important quantum effects that the DG model will include: quantum repulsion of the inversion and gate charges from the oxide interfaces, and quantum tunneling through thin gate oxides. We present initial results of 2-D DG simulations of ultra-small MOSFETs. Subtle but important issues involving the specification of the model, boundary conditions, and interface constraints for DG simulation of MOSFETs will also be illuminated.

Biegal, Bryan A.↗