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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Antiferromagnetic memory storage devices from magnetic transition metal dichalcogenides

Switchable antiferromagnetic (AFM) memory devices are provided based on magnetically intercalated transition metal dichalcogenides (TMDs) of the form AxMC2, where A is a magnetic element of stoichiometry x between 0 and 1, M is a transition metal of stoichiometry 1, and C is a chalcogen of stoichiometry 2. Memory storage is achieved by fabricating these materials into crosses of two or more bars and driving DC current pulses along the bars to rotate the AFM order to a fixed angle with respect to the current pulse. Application of current pulses along different bars can switch the AFM order between multiple directions. Standard resistance measurements can detect the orientation of the AFM order as high or low resistance states. The state of the device can be set by the input current pulses, and read-out by the resistance measurement, forming a non-volatile, AFM memory storage bit.

Analytis, James G.↗
DOE OSTI2022

Electrocatalyst comprising a crumpled transition metal dichalcogenide support loaded with monodispersed metal nanoparticles

An electrocatalyst comprises a crumpled transition metal dichalcogenide support loaded with catalytic metal nanoparticles through spontaneous reduction reactions. The support can be prepared by hydrothermal conversion of 2D nanosheets to 3D hierarchically crumpled sheets. As an example, using crumpled MoS 2 as a support, highly tunable Ru loadings were obtained using the electrostatic interaction between MoS 2 and RuCl 3 in solution. Control over Ru loading was leveraged to produce Ru—MoS 2 electrocatalysts that demonstrate different nitrogen reduction reaction activities, and which show varying resistance to electrochemical sintering and deactivation. Further, these high surface area materials can be utilized for many applications, including electrocatalysts, supercapacitors, and batteries.

Percival, Stephen↗
DOE OSTI2020

Excitations of Intercalated Metal Monolayers in Transition Metal Dichalcogenides

We combine Raman scattering spectroscopy and lattice dynamics calculations to reveal the fundamental excitations of the intercalated metal monolayers in the Fe x TaS 2 (x = 1/4, 1/3) family of materials. Both in- and out-of-plane modes are identified, each of which has trends that depend upon the metal–metal distance, the size of the van der Waals gap, and the metal-to-chalcogenide slab mass ratio. We test these trends against the response of similar systems, including Cr-intercalated NbS 2 and RbFe(SO 4 ) 2 , and demonstrate that the metal monolayer excitations are both coherent and tunable. Here, we discuss the consequences of intercalated metal monolayer excitations for material properties and developing applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Low Energy Implantation into Transition-Metal Dichalcogenide Monolayers to Form Janus Structures

Atomically-thin two-dimensional (2D) materials face significant energy barriers for synthesis and processing into functional metastable phases such as Janus structures. Here, in this study, the controllable implantation of hyperthermal species from pulsed laser deposition (PLD) plasmas is introduced as a top-down method to compositionally engineer 2D monolayers. The kinetic energies of Se clusters impinging on suspended monolayer WS 2 crystals were controlled in the <10 eV/atom range with in situ plasma diagnostics to determine the thresholds for selective top layer replacement of sulfur by selenium for the formation of high quality WSSe Janus monolayers at low (300 °C) temperatures, and bottom layer replacement for complete conversion to WSe 2 . Atomic-resolution electron microscopy and spectroscopy in tilted geometry confirm the WSSe Janus monolayer. Molecular dynamics simulations reveal that Se clusters implant to form disordered metastable alloy regions, which then recrystallize to form highly ordered structures, opening the door for low-energy implantation by PLD as a novel method to explore the synthesis of 2D Janus layers and alloys of variable composition.

2D materials↗
DOE OSTI2021

Metal-insulator transition in transition metal dichalcogenide heterobilayer moiré superlattices

Moiré superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics in which the number of electrons per effective atom can be tuned at will. Here we report on an exact diagonalization study of the electronic properties of half-filled narrow moiré bands in which correlation strengths are varied by changing twist angles or interaction strengths. We construct a phase diagram for the bilayer, identifying where the metal-insulator phase transition occurs, estimating the sizes of the charge gaps in the insulating phase, and commenting on the nature of the transition and the importance of subdominant interaction parameters.

2-dimensional systems↗
DOE OSTI2021

Insights into hyperbolic phonon polaritons in h – BN using Raman scattering from encapsulated transition metal dichalcogenide layers

Alternative techniques for probing hyperbolic phonon polaritons (HPPs) in two-dimensional materials will support the development of the emerging technologies in this field. Previous reports have shown that it is possible for W Se 2 monolayers in contact with the hexagonal boron nitride (h– BN) to generate HPPs in the h– BN via Raman scattering. In this paper, we set out our results on HPP Raman scattering induced in h– BN by W Se 2 and Mo Se 2 monolayers including multiple resonances at which the Raman scattering is enhanced. Analysis of the observed Raman line shapes demonstrates that Raman scattering allows HPPs with wave vectors with magnitudes significantly in excess of 15 000 cm –1 to be probed. Finally, we present evidence that the Raman scattering can probe HPPs with frequencies less than the expected lower bound on the reststrahlen band, suggesting new HPP physics still waits to be discovered.

2-dimensional systems↗
DOE OSTI2022

Layer pseudospin magnetism in a transition metal dichalcogenide double-moiré system

Spontaneous order of layer pseudospins in two-dimensional bilayers is common in quantum Hall systems, where it is responsible for hysteretic responses to gate fields in states with Ising order and giant drag voltages in states with XY (spontaneous interlayer phase coherence) order. In this article we predict that layer pseudospin order will also occur in double-moiré strongly correlated two-dimensional electron systems. Here, we comment on similarities and differences in the competition between the two types of order in quantum Hall and double-moiré systems, and relate our findings to previous work on Falicov-Kimball models of electronic ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Atomistic modeling of a superconductor–transition metal dichalcogenide–superconductor Josephson junction

Using an atomistic tight-binding model, we investigate the characteristics of a Josephson junction formed by monolayers of MoS 2 sandwiched between Pb superconducting electrodes. We derive and apply Green's function–based formulation to compute the Josephson current as well as the local density of states in the junction. Our analysis of diagonal and off-diagonal components of the local density of states reveals the presence of triplet superconducting correlations in the MoS 2 monolayers and spin-polarized subgap (Andreev bound) states. Our formulation can be extended to other systems where atomistic details and large scales are needed to obtain accurate modeling of Josephson junction physics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Itinerant ferromagnetism in transition metal dichalcogenide moiré superlattices

Moiré materials are artificial crystals formed at van der Waals heterojunctions that have emerged as a highly tunable platform that is able to realize much of the rich quantum physics of electrons in atomic scale solids, and in several cases even new quantum phases of matter. Here we use finite-size exact diagonalization methods to explore the physics of single-band itinerant electron ferromagnetism in semiconductor moiré materials. As a result, we predict where ferromagnetism is likely to occur in triangular-lattice moiré systems, and where it is likely to yield the highest Curie temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Quantum Melting of Generalized Wigner Crystals in Transition Metal Dichalcogenide Moiré Systems

The generalized Wigner crystal (GWC) is a novel quantum phase of matter driven by further-range interaction at fractional fillings of a lattice. The role of further-range interaction as the driver for the incompressible state is akin to the Wigner crystal. On the other hand, the significant role of commensurate filling is akin to the Mott insulator. Recent progress in simulator platforms presents unprecedented opportunities to investigate quantum melting in the strongly interacting regime through synergy between theory and experiments. However, the earlier theory literature presents diverging predictions. We study the quantum freezing of GWC through large-scale density matrix renormalization group simulations of a triangular lattice extended Hubbard model. We find a single first-order phase transition between the Fermi liquid and the √3×√3 GWC state. Furthermore, the GWC state shows long-range antiferromagnetic 120° Néel order. Our results present the simplest answers to the question of the quantum phase transition into the GWC phase and the properties of the GWC phase.

Density matrix renormalization group↗