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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Niobium's intrinsic coherence length and penetration depth revisited using low-energy muon spin spectroscopy and secondary-ion mass spectrometry

Here, we report direct, simultaneous measurements of the London penetration depth (𝜆 𝐿 ) and Bardeen-Cooper-Schrieffer coherence length (𝜉 0 ) in oxygen-doped niobium, with impurity concentrations spanning the “clean” to “dirty” limits. Two depth-resolved techniques—low-energy muon spin spectroscopy and secondary-ion mass spectrometry—were used to quantify the element's Meissner screening profiles, analyzed within a framework that accounts for nonlocal electrodynamics. The analysis indicates intrinsic length scales of 𝜆 𝐿 = 29.1⁢ (10)⁢ nm and 𝜉 0 = 39.9 ⁢(25)⁢ nm, corresponding to a Ginzburg-Landau parameter 𝜅 = 0.70⁢ (5). The obtained 𝜆 𝐿 and 𝜅 values, accurately quantified at the nanoscale, are smaller than those commonly used in applications and modeling, and indicate that clean niobium lies at the boundary between type-I and type-II superconductivity, supporting the contemporary view that its intrinsic state may be type I.

Particle Accelerator↗
DOE OSTI2022

Investigating the Role of Copper in Arsenic Doped Cd(Se,Te) Photovoltaics

The open circuit voltage (VOC) deficit in Cd(Se,Te)-based photovoltaics remains a critical obstacle for pushing the technology closer to theoretical performance limits. Arsenic doping has become a dominant and promising route to achieve the higher p-type carrier concentrations necessary for higher VOC, but challenges associated with this alternate defect chemistry and higher doping density have hindered progress. Here we show that while arsenic doping enables high carrier concentrations (>1016 cm-3), co-doping with copper can provide a boost to VOC without a significant change to carrier concentration. A large data set is initially used to explore current-voltage and capacitance-voltage trends associated with arsenic doped devices with and without copper. A smaller subset is then used to probe these trends using a wide variety of characterization techniques. Copper is found to facilitate reduced interface recombination and potentially improved bulk absorber characteristics, though the mechanisms for these improvements are not yet clear. Despite the improved performance of co-doped devices, VOC is still far below its potential especially for highly doped devices. Low emitter doping in conjunction with high absorber doping seems to be a plausible cause for this significant deficit, though other device properties may exacerbate this problem.

CdSeTe↗
DOE OSTI2020

Correlative nm-Scale Nonuniformity of Active Charge Carriers and Electrical Potential Along Both the Plane-View and Depth Directions in Group-V-Doped CdTe Thin Films: Preprint

We report nanometer-scale imaging on inhomogeneous distributions of active carrier and electrical potential in an As-doped CdTe film along both plane-view and film-depth directions. Despite Se grading, the SCM imaging does not show a clear variation of carrier concentration along the depth of the film. Instead, we observe carrier concentration variations of about 1 order of magnitude (high 1015 to low 1017/cm3) with inhomogeneous spatial regions ranging from a few hundred nm to a few ?m. This nonuniformity is distributed randomly in both the film lateral and vertical directions, independent of grain structure and GBs. We further mapped the surface potential using Kelvin probe force microscopy (KPFM). Higher potential was found on GBs, illustrating positive GB charging but not GB-specific carrier concentration. The results indicate that this suite of techniques can help identify nonuniform carrier concentration and potential fluctuations that can contribute to Voc deficits in GrV-doped CdTe devices.

CdTe thin film photovoltaics↗
DOE OSTI2023

Pushing the heterometal doping limit while preserving long-lived charge separation in a Ti-based MOF photocatalyst

Here, this study explores the nature, dynamics, and reactivity of the photo-induced charge separated excited state in a Fe 3+ -doped titanium-based metal organic framework (MOF), xFeMIL125-NH 2 , as a function of iron concentration. The MOF is synthesized with doping levels x = 0.5, 1 and 2 Fe node sites per octameric Ti-oxo cluster and characterized by powder x-ray diffraction, UV-vis diffuse reflectance, atomic absorption, and steady state Fe K-edge X-ray absorption spectroscopy. For each doping level, time-resolved X-ray transient absorption spectroscopy studies confirm the electron trap site role of the Fe sites in the excited state. Time scan data reveal multiexponential decay kinetics for the charge recombination processes which extend into the microsecond range for all three concentrations. A series of dye photodegradation studies, based on the oxidative decomposition of Rhodamine B, demonstrates the reactivity of the charge separated excited state and the photocatalytic capacity of these MOF materials compared to traditional heterometal-doped semiconductor photocatalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Pyrolyzer Assisted Vapor Transport Deposition of Antimony-doped Cadmium Telluride

A new method for in-situ Sb doping of CdTe that uses a modified vapor transport deposition system is described. This modification enables control of the Sb concentration with a pyrolysis stage to enhance the doping efficiency. CdTe:Sb films under different deposition conditions are characterized by SEM, XRD, and CV measurements for determining morphology, crystal structure, and hole concentration. Variations of the Sb dopant heater and pyrolyzer temperatures do not affect the CdTe morphology and crystal structure. However, CV measurements show that a higher dopant heater or pyrolyzer temperature leads to higher hole concentration. In this study, CdTe: Sb films achieve a hole concentration of 1016 cm-3 and 10% doping efficiency when the dopant heater is 600C and the pyrolyzer temperature is 1100C. This demonstrates a path to produce high hole concentration polycrystalline CdTe film with a low concentration of dopant-induced defect.

14 SOLAR ENERGY↗
DOE OSTI2025

Assessment and Planning of HFIR Test Articles

Burnable absorbers (BAs) are introduced into nuclear fuels to aid in controlling the activity of the irradiated fuel at the beginning of life in a light water reactor (LWR). This improves the efficiency of the reactor since it allows for higher enrichments (> 5 % 235 U) to be used in a LWR, which increases the burnup limit and therefore the cycle length. The purpose of the BA is to absorb neutrons to prevent power peaking, and the concentration of BA is consumed under irradiation. In order to understand the effect of the BAs on the microstructure and thermophysical properties of the fresh and irradiated fuel, neutron irradiation tests will be carried out at the High Flux Isotope Reactor (HFIR). These tests will include Gd 2 O 3 doped UO 2 fuels with concentrations that vary from 4 to 10 weight % Gd 2 O 3 .

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing

Single-crystal model systems are valuable tools to investigate fundamental material properties. In this work, we use molecular beam epitaxy to deposit in situ arsenic (As) doped single-crystal CdTe films on large area Si substrates to better understand As doping for photovoltaic applications. We found that As incorporation is highly temperature dependent: a substrate temperature difference of 50 °C can lead to several orders of magnitude difference in As concentration. Cd overpressure during in situ doping may limit out-diffusion of As but decrease As incorporation, especially at lower growth temperatures. Carrier concentrations greater than 10 16 cm −3 can be achieved with or without Cd overpressure when annealed at temperatures above 500 °C. However, unlike the low (∼1% to 5%) dopant activation commonly observed in polycrystalline CdTe, our films achieve significantly higher activation ratios—exceeding 50%, and in some cases approaching 80%. These values are consistent with or exceed prior reports in single-crystal CdTe systems. In addition to as-deposited arsenic concentrations, we also consider arsenic distribution after different rapid thermal processing temperatures. We propose a detailed definition and description of how arsenic incorporation is considered and calculated. Due to carrier concentration saturation, As incorporation also needs to be controlled to average levels of 10 17 cm −3 to achieve high activation. These findings suggest that higher annealing temperature regimes may be beneficial to polycrystalline CdTe based PV devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Investigating the Role of Copper in Arsenic Doped CdSeTe Photovoltaic Devices

As part of NREL's development of arsenic doped CdSeTe devices, co-doping with copper has become a common practice and, despite little difference in carrier concentration (often ~1016 cm-3), co-doped devices regularly show improved Voc. Given the critical importance of improving Voc, we are investigating this trend with a wide variety of characterization techniques including SEM, EBSD, SIMS, PL, CL, XPS, TRPL, JVT, KPFM, and DLTS. Together these indicate that Cu facilitates improved absorber-buffer interface properties and potentially improved bulk absorber characteristics, though specific mechanisms have not yet been determined. Despite the improved performance of co-doped devices, Voc is still far below its potential, and we explore the possibility that this limitation is the result of low buffer doping in conjunction with high absorber doping.

arsenic doping↗
DOE OSTI2020

Computational discovery of promising new n-type dopable ABX Zintl thermoelectric materials

Computational prediction of good thermoelectric (TE) performance in several n-type doped Zintl phases, combined with successful experimental realization, has sparked interest in discovering new n-type dopable members of this family of materials. However, most known Zintls are typically only p-type dopable; prior successes in finding n-type Zintl phases have been largely serendipitous. Here in this paper, we go beyond previously synthesized Zintl phases and perform chemical substitutions in known n-type dopable ABX Zintl phases to discover new ones. We use first-principles calculations to predict their stability, potential for TE performance as well as their n-type dopability. Using this approach, we find 17 new ABX Zintl phases in the KSnSb structure type that are predicted to be stable. Several of these newly predicted phases (KSnBi, RbSnBi, NaGeP) are found to exhibit promising n-type TE performance and are n-type dopable. We propose these compounds for further experimental studies, especially KSnBi and RbSnBi, which are both predicted to be good TE materials with high electron concentrations due to self-doping by native defects, when grown under alkali-rich conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide

Abstract Reliable, controlled doping of 2D transition metal dichalcogenides will enable the realization of next‐generation electronic, logic‐memory, and magnetic devices based on these materials. However, to date, accurate control over dopant concentration and scalability of the process remains a challenge. Here, a systematic study of scalable in situ doping of fully coalesced 2D WSe 2 films with Re atoms via metal–organic chemical vapor deposition is reported. Dopant concentrations are uniformly distributed over the substrate surface, with precisely controlled concentrations down to <0.001% Re achieved by tuning the precursor partial pressure. Moreover, the impact of doping on morphological, chemical, optical, and electronic properties of WSe 2 is elucidated with detailed experimental and theoretical examinations, confirming that the substitutional doping of Re at the W site leads to n‐type behavior of WSe 2 . Transport characteristics of fabricated back‐gated field‐effect‐transistors are directly correlated to the dopant concentration, with degrading device performances for doping concentrations exceeding 1% of Re. The study demonstrates a viable approach to introducing true dopant‐level impurities with high precision, which can be scaled up to batch production for applications beyond digital electronics.

Kozhakhmetov, Azimkhan↗
DOE OSTI2022

Understanding and Manipulating Helical Nanofilaments in Binary Systems with Achiral Dopants

Here, in this paper, we report the relationship between helical pitch of the helical nanofilament (HNF) phase formed by bent-core molecule NOBOW and the concentration of achiral dopants 5CB and octane, using linearly polarized resonant soft X-ray scattering (RSoXS). Utilizing theory-based simulation, which fits well with the experiments, the molecular helices in the filament were probed and the superstructure of helical 5CB directed by groove of HNFs was observed. Quantitative pitch determination with RSoXS reveals that helical pitch variation is related to 5CB concentration with no temperature dependence. Doping rodlike immiscible 5CB led to a pitch shortening of up to 30%, which was attributed to a change in interfacial tension. By shedding light not only on phase behavior of binary systems but also enabling control over pitch length, our work may benefit various applications of HNF-containing binary systems, including optical rotation devices, circularly polarized light emitters, and chirality transfer agents.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

The Stability of Nd Hydroxyl Complexes at Near Neutral to Alkaline pH from 25 to 75 °C: Implications for Monazite Solubility in Hydrothermal Aqueous Fluids

Speciation of rare earth elements (REE) in aqueous fluids controls their mobilization during fluid-rock interaction. Thermodynamic modeling provides important insights into the factors controlling REE mobility and fractionation in aqueous fluids, in which aqueous REE hydroxyl complexes are particularly important across a broad pH range. However, the stability of these REE hydroxyl complexes remains poorly determined due to limited experimental data above ambient temperature. In this work, UV–vis spectrophotometry experiments were conducted to determine the cumulative hydrolysis constants for neodymium (Nd) from 25 to 75 °C in near-neutral to alkaline solutions. The color indicator m -cresol purple was used to determine in situ pH. Alkaline NaOH-bearing aqueous solutions were doped with varying initial Nd concentrations (0 to ∼0.155 mmol/kg), which resulted in the release of protons (H + ) and pH decrease during hydrolysis of Nd 3+ according to Nd 3+ + n H 2 O = Nd(OH) n 3– n + H + . The average OH – ligand number coordinated to Nd 3+ was found to increase from 1.0 to 1.6 at 25 °C and from 1.2 to 2.8 at 75 °C over a pH range from 6.3 to 9.0. The measured speciation shows an increased predominance of Nd(OH) 3 0 over the Nd(OH) 2 + and Nd(OH) 2+ species with increased temperature and pH. The increasing cumulative formation constants (log*β° n , n = 1 to 3) retrieved from 25 to 75 °C differ by 0.1 to 1.9 logarithmic units in comparison to existing thermodynamic databases. These updated thermodynamic data have important implications for geochemical modeling of the speciation of Nd hydroxyl complexes and the solubility of monazite as a function of pH.

58 GEOSCIENCES↗
DOE OSTI2021

Approaching disorder-tolerant semiconducting polymers

Doping has been widely used to control the charge carrier concentration in organic semiconductors. However, in conjugated polymers, n-doping is often limited by the tradeoff between doping efficiency and charge carrier mobilities, since dopants often randomly distribute within polymers, leading to significant structural and energetic disorder. Here, we screen a large number of polymer building block combinations and explore the possibility of designing n-type conjugated polymers with good tolerance to dopant-induced disorder. We show that a carefully designed conjugated polymer with a single dominant planar backbone conformation, high torsional barrier at each dihedral angle, and zigzag backbone curvature is highly dopable and can tolerate dopant-induced disorder. With these features, the designed diketopyrrolopyrrole (DPP)-based polymer can be efficiently n-doped and exhibit high n-type electrical conductivities over 120 S cm -1 , much higher than the reference polymers with similar chemical structures. This work provides a polymer design concept for highly dopable and highly conductive polymeric semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

The critical role of synthesis conditions on small polaron carrier concentrations in hematite—A first-principles study

Achieving highly efficient energy conversion with transition metal oxides necessitates overcoming conductivity limitations due to the formation of small polarons. Detailed understanding of the interplay among intrinsic defects, dopants, and electron polarons can help devise strategies for achieving higher carrier concentrations, therefore improving carrier conductivity. This work employs first-principles calculations to reliably predict electron polaron concentrations in a prominent polaronic oxide, hematite (Fe 2 O 3 ), by resolving interactions between charged defects and electron polarons and keeping charge neutrality condition among all charged species. This work addresses that both V O and Fe i can be primary donors in undoped hematite depending on the synthesis conditions, such as synthesis temperature and oxygen partial pressure, despite the fact that V O owns an extremely high ionization energy compared to k B T. Furthermore, from calculations of a plethora of n-type dopants (group IV and V elements), we find that Ti, Ge, Sb, and Nb are able to raise electron polaron concentrations in hematite significantly without considering dopant clustering. However, the magnitude of electron polaron concentration increase would be smaller if the dopant has a high tendency of clustering, such as Ti. Here we reveal the critical role of synthesis conditions on tuning electron polaron concentrations of both undoped and doped hematite. Our theoretical analysis provides important insights and general design principles for engineering more conductive polaronic oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Insights into ε - Fe 2 O 3 interactions via Cr doping

We report innovative materials, particularly multiferroics, have the potential to transform technology. Full optimization of their usage will require an in-depth understanding of the underlying electronic and magnetic interactions. One such material is ε-Fe 2 O 3 . However, because this hard ferrimagnet with strong magnetoelectric coupling is composed of only Fe 3+ , distinguishing the role of the various sites is incredibly challenging. To overcome this challenge, Cr 3+ ions were doped into the DOh1 sites of ε-Fe 2 O 3 nanoparticles, effectively creating electron deficient defects. The ε-(Fe 1-x Cr x ) 2 O 3 (x = 0.01 to 0.12) nanoparticles have reduced μ 0 H C (T) and M S (T) as the Cr concentration increases. The impact of Cr doping on the local electronic and magnetic structure is characterized. At 10 K, subtle changes are measured, with the T d site electrons becoming increasingly localized as the concentration of electron-deficient DOh1 sites increases. Far more dramatic changes occur at 300 K, when the T d site of the ε-(Fe 1-x Cr x ) 2 O 3 splits into two distinct local environments with Fe 2+ and Fe 4+ character. The nature of this splitting suggests that dynamic electron interactions play a significant role in ε-Fe 2 O 3 ’s magnetic anisotropy and magnetoelectric properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗