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This overview describes a flexible system of electronic and mechanical building blocks with characteristics and capabilities suitable for construction of a flight-capable experiment data management system. The initial space application of this modular system, called the Spacelab Payload System Modular Electronics (SPSME), is the data system for the Nuclear Radiation Monitor (NRM) on Spacelab Mission 2.
Reliability is the ability of a product to properly function, within specified performance limits, for a specified period of time, under the life cycle application conditions. Failure analysis is a vital tool in the effort to ensure reliability of electronic products and systems throughout their product lifecycle. Today, organizations involved in activities within the electronics supply chain are facing new challenges, not just from complex assembly styles, harsher lifecycle environments, and sophisticated supply chains, but also from customers who are demanding a quicker turn-around. Unfortunately, root cause failure analysis is often performed incompletely, leading to a poor understanding of failure mechanisms and causes and, customer dissatisfaction due to recurring failures. The PDC (Professional Development Course) starts with an introduction to reliability concepts, physics of failure and an overview of failure mechanisms that affect PCBs (Printed Circuit Boards), PCBAs (Printed Circuit Board Assembly) and components. The PDC then dives into root cause hypothesizing techniques (Pareto, FMEA (Failure Modes and Effects Analysis), fishbone (Cause-And-Effect Diagram), FTA (Fault Tree Analysis)), non-destructive and destructive analysis and, materials characterization will be discussed. Numerous failure analysis case studies will be used to illustrate the techniques and analysis principles to arrive at the root cause(s) of field failures on printed circuit boards, active components, and assemblies. What Attendees will Learn: Topics include: Overview of Reliability Concepts Failure mechanisms of electronic products Root cause analysis Failure analysis techniques -Non-destructive techniques (optical, CSAM (Confocal Scanning Electron Microscopy) etc.) -Destructive analysis (DPA (Destructive Physical Analysis), Decap (Decapsulation), FIB (Focused Ion Beam) etc.) -Materials characterization (XRF (X-Ray Fluorescence) , EDS (Error Detection Sequential), TMA/DSC (Thermal Mechanical Analysis/Differential Scanning Calorimetry) etc.)
Researchers at the NASA Glenn Research Center, in collaboration with the Rochester Institute of Technology, have investigated the thermionic properties of high-purity, single-wall carbon nanotubes (SWNTs) for use as electron-emitting electrodes. Carbon nanotubes are a recently discovered material made from carbon atoms bonded into nanometer-scale hollow tubes. Such nanotubes have remarkable properties. An extremely high aspect ratio, as well as unique mechanical and electronic properties, make single-wall nanotubes ideal for use in a vast array of applications. Carbon nanotubes typically have diameters on the order of 1 to 2 nm. As a result, the ends have a small radius of curvature. It is these characteristics, therefore, that indicate they might be excellent potential candidates for both thermionic and field emission.
The objectives of the Dynamics Explorer mission are to investigate the coupling of energy, mass, and momentum among the earth's magnetosphere, ionosphere, and upper atmosphere. At launch, on August 3, 1981, DE-1 was placed into an elliptical polar orbit having an apogee of 23,130 km to allow global auroral imaging and crossings of auroral field lines at altitudes of several thousand kilometers. At the same time DE-2 was placed into a polar orbit, coplanar with that of DE-1 but with a perigee altitude low enough (309 km) for neutral measurements and an apogee altitude of 1012 km. The DE-1 High Altitude Plasma Instrument (HAPI) provided data on low and medium energy electrons and ions from August 13, 1981 until December 1, 1981, when a high-voltage failure occured. Analysis of HAPI data for the time period of this contract has produced new results on the source mechanisms for electron conical distributions, particle acceleration phenomena in auroral acceleration regions, Birkeland currents throughout the nightside auroral regions, the source region for auroral kilometric radiation (AKR), and plasma injection phenomena in the polar cusp.
Two hundred and fifty-nine short-duration microwave (15.4 GHz) bursts which occurred during the period of January 1968 to March 1970 were correlated with possible soft X-ray (2-12 A) flares occurring simultaneously. Sixty-six percent of the microwave bursts which were observed during periods of soft X-ray data coverage had associated soft X-ray flares. A study of an index of impulsiveness of the microwave flares failed to show a separation of the events into subclasses which could be attributed to distinctly different physical mechanisms. A weak (0.43) correlation was found between the intensities of the microwave and X-ray flares. A very weak (0.15) and statistically questionable correlation was found between the total energy released in these two energy ranges. Two models for the electron acceleration mechanism are discussed.
The nonlinear saturation of the Farley-Buneman instability in a collisional plasma is studied by a 2 1/2 dimensional electrostatic particle simulation which includes inelastic and elastic collisions of electrons and elastic collision of ions with neutrals. In the simulation, a uniform convection electric field is applied externally so that the relative velocity between the electrons and ions is greater than the ion sound speed and destabilizes the instability. A nonlinear frequency shift from higher to lower frequencies and diffusion of the wave spectrum in two dimensional wave number space are found. It is found that the dominant mechanism for electron heating is due to an enhanced effective electron collision frequency and hence enhanced resistive heating as suggested by Primdahl (1986) and not due to the heating of electrons by the electric field of the waves parallel to the magnetic field. For the ionospheric conditions discussed by Schlegel and St.-Maurice (1981)an anomalous heating rate of about 4 x 10 to the 7th W/cu cm is found.
This report consists of a copy of a paper that has been submitted to the 'Journal of Geophysical Research', entitled 'DE 1 and Viking Observations Associated With Electron Conical Distributions,' and an abstract of another paper (included as an appendix to the report) that is about to be submitted to the same journal entitled 'Perpendicular Electron Heating by Absorption of Auroral Kilometric Radiation.' A bibliography of other papers that have been published as a result of this project follows. The purpose of this project was to use the DE 1 and Viking particle and wave data to better understand the source mechanism of electron conical distributions. We have shown that electron conics are often associated with upper hybrid waves in the nightside auroral region. We have also shown that electron conics are observed near auroral kilometric radiation (AKR) source regions and may be the result of perpendicular heating due to waves. We have completed a statistical study of electron conics observed by DE-l and Viking. The study shows the occurrence frequency and location of electron conical distributions; there are some differences between the results of DE and Viking perhaps due to different regions sampled.
Reliability is the ability of a product to properly function, within specified performance limits, for a specified period of time, under the life cycle application conditions. Failure analysis is a vital tool in the effort to ensure reliability of electronic products and systems throughout their product lifecycle. Today, organizations involved in activities within the electronics supply chain are facing new challenges, not just from complex assembly styles, harsher lifecycle environments, and sophisticated supply chains, but also from customers who are demanding a quicker turn-around. Unfortunately, root cause failure analysis is often performed incompletely, leading to a poor understanding of failure mechanisms and causes and, customer dissatisfaction due to recurring failures. The PDC starts with an introduction to reliability concepts, physics of failure and an overview of failure mechanisms that affect PCBs, PCBAs and components. The PDC then dives into root cause hypothesizing techniques (Pareto, FMEA, fishbone, FTA), non-destructive and destructive analysis and, materials characterization will be discussed. Numerous failure analysis case studies will be used to illustrate the techniques and analysis principles to arrive at the root cause(s) of field failures on printed circuit boards, active components, and assemblies. What Will You Learn: Topics include: Overview of Reliability Concepts Failure mechanisms of electronic products Root cause analysis Failure analysis techniques -Non-destructive techniques (optical, CSAM etc.) -Destructive analysis (DPA, Decap, FIB etc.) -Materials characterization (XRF, EDS, TMA/DSC etc.) Who Will Benefit: Reliability engineers, failure analysis engineers, engineering managers, design engineers, component engineers, quality assurance functions and, personnel involved with reliability activities within their company.
An attempt is made to determine the origin of the inverted-V precipitating electrons and mechanisms that could create the inverted-V structure. The energy and pitch angle structures are compared with predictions from several theories that have been proposed to explain the origin of inverted-V events. Data from the AE-D satellite indicate that the origin of the inverted-V precipitating electrons is in the magnetosphere, the most probable regions being the plasma sheet and the neutral sheet. The energy and pitch angle distributions show that electrons are trapped between the mirror points and the electric field potential. The observations suggest that field-aligned precipitating electrons have been heated, probably when they were accelerated by the parallel electric field. Qualitatively, the detailed structures of the inverted-V events favor the theory of anomalous resistivity.
An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.
The present invention is directed toward devices comprising carbon nanotubes that are capable of detecting displacement, impact, stress, and/or strain in materials, methods of making such devices, methods for sensing/detecting/monitoring displacement, impact, stress, and/or strain via carbon nanotubes, and various applications for such methods and devices. The devices and methods of the present invention all rely on mechanically-induced electronic perturbations within the carbon nanotubes to detect and quantify such stress/strain. Such detection and quantification can rely on techniques which include, but are not limited to, electrical conductivity/conductance and/or resistivity/resistance detection/measurements, thermal conductivity detection/measurements, electroluminescence detection/measurements, photoluminescence detection/measurements, and combinations thereof. All such techniques rely on an understanding of how such properties change in response to mechanical stress and/or strain.
Present day integrated circuits pose a challenge to conventional electronic and mechanical test methods. Feature sizes in the submicron and nanometric regime require radical approaches in order to facilitate electrical contact to circuits and devices being tested. In addition, microwave operating frequencies require careful attention to distributed effects when considering the electrical signal paths within and external to the device under test. An alternative testing approach which combines the best of electrical and optical time domain testing is presented, namely photocathode electron microscope quantitative voltage contrast (PEMQVC).
In order to sustain life on the moon, and especially on Mars, the inhabitants must be self-sufficient. As on Earth, electronic and mechanical systems will break down and must be repaired. It is not realistic to "send" parts to the moon or Mars in an effort to replace failed ones or have spares for all components. It will be important to have spares on hand and even better would be to have the capability to fabricate parts in situ. The In Situ Fabrication and Repair (ISFR) team is working to develop the Arcam Electron Beam Melting (EBM) machine as the manufacturing process that will have the capability to produce repair parts, as well as new designs, and tooling on the lunar surface and eventually on Mars. What materials will be available for the inhabitants to use? What materials would be most useful? The EBM process is versatile and can handle a multitude of materials. These include titanium, stainless steels, aluminums, inconels, and copper alloys. Research has shown what parts have failed during past space missions and this data has been compiled and assessed. The EBM machine is fully capable of processing these materials of choice. Additionally, the long-term goal is to use the lunar regolith as a viable feedstock. Preliminary work has been performed to assess the feasibility of using raw lunar regolith as a material source or use a binder combined with the regolith to achieve a good melt.
A 2.5-dimensional fully relativistic EM, particle-in-cell code (PIC) is used to investigate a potential electron acceleration mechanism in solar flares. The free energy is provided by ions which have a ring velocity distribution about the magnetic-field direction. Ion rings may be produced by perpendicular shocks, which could in turn be generated by the super-Alfvenic motion of magnetic flux tubes emerging from the photosphere or by coronal mass ejections. Such ion distributions are known to be unstable to the generation of lower hybrid waves, which have phase velocities in excess of the electron thermal speed parallel to the field and can, therefore, resonantly accelerate electrons in that direction. The simulations show the transfer of perpendicular ion energy to energetic electrons via lower hybrid wave turbulence. With plausible ion ring velocities, the process can account for the observationally inferred fluxes and energies of non-thermal electrons during the impulsive phase of flares.
A software module that models the electronic and mechanical aspects of hydrocarbon molecules and carbon molecular structures on the basis of first principles has been written for incorporation into, and execution within, the Easy (Modular) Tight-Binding (EZTB) software infrastructure, which is summarized briefly in the immediately preceding article. Of particular interest, this module can model carbon crystals and nanotubes characterized by various coordinates and containing defects, without need to adjust parameters of the physical model. The module has been used to study the changes in electronic properties of carbon nanotubes, caused by bending of the nanotubes, for potential utility as the basis of a nonvolatile, electriccharge- free memory devices. For example, in one application of the module, it was found that an initially 50-nmlong carbon, (10,10)-chirality nanotube, which is a metallic conductor when straight, becomes a semiconductor with an energy gap of .3 meV when bent to a lateral displacement of 4 nm at the middle.
An ion beam probe diagnostic system can measure time- and space-resolved profiles of plasma space potential and electron density. In combination with a computer iterative technique, the ion beam probe can determine both the space potential profile in plasmas containing strong electric fields and potentials comparable in magnitude to the energy of the probing ion beam. During ion beam probing of a modified Penning discharge, several groups of secondary ions were observed coming from the plasma with a fixed primary beam energy and momentum. The energies of these ions were within 10 percent of the values predicted by a computer-generated model of the potential profile in the plasma. The mechanical and electronic components of the system are described, with particular emphasis on those features required to probe plasma potentials comparable in magnitude to the ion beam energy.
The practicability of a multi-frequency antenna for spaceborne microwave radiometers was considered in detail. The program consisted of a comparative study of various antenna systems, both mechanically and electronically scanned, in relation to specified design goals and desired system performance. The study involved several distinct tasks: definition of candidate antennas that are lightweight and that, at the specified frequencies of 5, 10, 18, 22, and 36 GHz, can provide conical scanning, dual linear polarization, and simultaneous multiple frequency operation; examination of various feed systems and phase-shifting techniques; detailed analysis of several key performance parameters such as beam efficiency, sidelobe level, and antenna beam footprint size; and conception of an antenna/feed system that could meet the design goals. Candidate antennas examined include phased arrays, lenses, and optical reflector systems. Mechanical, electrical, and performance characteristics of the various systems were tabulated for ease of comparison.
We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.