Orientation dependence of the gage factor in electron-irradiated silicon
Crystal orientation dependence of thermal resistance and gage factor in electron irradiated n-type silicon strain gages
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Crystal orientation dependence of thermal resistance and gage factor in electron irradiated n-type silicon strain gages
Here, we investigate the temporal and spatial scales of resistance fluctuations (𝑅 fluctuations) at the superconducting resistive transition accessed through voltage fluctuation measurements in thin epitaxial TiN films. This material is characterized by slow electron-phonon relaxation, which puts it far beyond the applicability range of the textbook scenario of superconducting fluctuations. The measured Lorentzian spectrum of the 𝑅 fluctuations identifies their correlation time, which is nearly constant across the transition region and has no relation to the conventional Ginzburg-Landau timescale. Instead, the correlation time coincides with the energy relaxation time determined by a combination of the electron-phonon relaxation and the relaxation via diffusion into reservoirs. Our data are quantitatively consistent with the model of spontaneous temperature fluctuations and highlight the lack of understanding of the resistive transition in materials with slow electron-phonon relaxation.
We describe initial results from a time-dependent, semi-kinetic model of plasma outflow incorporating wave-particle interactions along current-carrying auroral field lines. Electrostatic waves are generated by the current driven ion cyclotron instability (CDICI), causing perpendicular velocity diffusion of ions plus electron heating via anomalous resistivity when and where the relative drift between electrons and ions exceeds certain critical velocities. Using the local bulk parameters we calculate these critical velocities, and so are able to self-consistently switch on and off the heating of the various particle species. Due to the dependence of these critical velocities on the bulk parameters of the species the heating effects exhibit quite complex spatial and temporal variations. A wide range of ion distribution functions are observed in these simulations, including conics with energies of a few electron volts and 'ring' distributions. The rings are seen to be a natural result of transverse heating and velocity filter effects and do not require coherent acceleration processes. We also observe the formation of a density depletion in hydrogen and enhanced oxygen densities at high altitudes.
Here, this work demonstrates a first-principles-based approach to obtaining finite temperature thermal and electronic transport properties which can be employed to model and understand mesoscale structural evolution during electronic, magnetic, and structural phase transitions. A computationally tractable model was introduced to estimate electron relaxation time and its temperature dependence. The model is applied to Ca 3 Ru 2 O 7 with a focus on understanding its electrical resistivity across the electronic phase transition at 48 K. A quasiharmonic phonon approach to the lattice vibrations was employed to account for thermal expansion while the Boltzmann transport theory including spin-orbit coupling was used to calculate the electron-transport properties, including the temperature dependence of electrical conductivity.
Welding force monitored in process. Electronic force gage uses strain gage on deformable member. Oscilloscope trace of welding force photographed and compared with standard trace during calibration and troubleshooting of resistance welding equipment. Adaptable to small scale resistance welding in electronics industry.
A hydrodynamic air bearing with a compliment surface is used in the gas generator of an upgraded automotive gas turbine engine. In the prototype design, the compliant surface is a thin foil spot welded at one end to the bearing cartridge. During operation, the foil failed along the line of spot welds which acted as a series of stress concentrators. Because of its higher degree of geometric uniformity, electron beam welding of the foil was selected as an alternative to spot welding. Room temperature bending fatigue tests were conducted to determine the fatigue resistance of the electron beam welded foils. Equations were determined relating cycles to crack initiation and cycles to failure to nominal total strain range. A scaling procedure is presented for estimating the reduction in cyclic life when the foil is at its normal operating temperature of 260 C (500 F).
The critical ionization velocity process is studied by first investigating a coupled system of equations describing the production of several ion species and electrons by impact ionization, their collisions with neutrals, and the heating of electrons. Analytic relations derived from this were tested with the help of a particle simulation, including collisional processes between neutrals and plasma particles. It was found that resistive heating of electrons plays an important role when the density of the neutrals is high, and that electron heating due to lower hybrid waves is significant when the neutral density is low. In both cases, the control of the plasma production rate by the ratio of the beam velocity to the critical velocity was verified.
The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.
We present a comparative magnetotransport study of V4O7 thin films grown simultaneously on single-crystal Al2O3 (r-cut) and amorphous SiO2 substrates, to examine substrate-induced effects on electronic transport across the insulator–metal transition (IMT). Temperature-dependent resistivity reveals a broad electronic ordering regime below the IMT, with both films exhibiting similar transition temperatures but differing by nearly an order of magnitude in absolute resistivity. Despite this strong substrate dependence of the resistivity scale, the magnetoresistance remains predominantly quadratic in magnetic field over wide temperature intervals for both substrates. Analysis of the quadratic magnetoresistance defines an effective mobility scale that evolves systematically across the IMT and exhibits a similar temperature dependence for the two films. Structural characterization, including atomic-resolution scanning transmission electron microscopy of the V4O7/Al2O3 interface and azimuthal X-ray diffraction measurements, reveals a sharp interface and well-defined in-plane crystallographic registry for the r-cut film, in contrast to the rotationally averaged in-plane structure expected for films grown on amorphous SiO2. These results indicate that while substrate-controlled structural registry modifies the resistivity scale, the quadratic magnetotransport response across the IMT remains largely robust, providing a consistent diagnostic of electronic transport in V4O7 thin films.
Polymer binders add crucial structural integrity to lithium ion battery composite cathodes, but industry standard binders, such as polyvinylidene fluoride (PVDF), are insulating to ions and electrons, detrimentally adding resistance to the overall system. In this work, we use electrostatics to stabilize a blend of a charged conjugated polymer with an oppositely charged polyelectrolyte, providing a processable, stable binder with high ionic and electronic conduction. Using LiFePO4 cathodes as a model system, we show significant improvement in rate capability and stability, with the conducting binder enabling a 39% utilization at 6C compared to 1.6% when PVDF is the binder. Additionally, the conducting binder affords a 63% capacity retention over 400 C/2 cycles, compared to only a 6% retention over 400 cycles when PVDF is the binder. These results show that electrostatically stabilized complexation is a promising strategy to integrate both electronic and ionic conductivity into a binder, while simultaneously maintaining stability and processability.
Persistent photon and single-electron emissions - in the form of “electron trains” and localized “hot spots” - have been observed in multiple dual-phase liquid xenon (LXe) time projection chambers (TPCs), often persisting long after ionizing events. Here, we show that these phenomena are naturally explained by photon-triggered single-electron emission from resistive mixed-oxide films on stainless-steel (SS304 or s.s.) wires, which behave as leaky capacitors with long RC time constants at LXe temperature. Positive ions landing on these oxides can further enhance local fields and drive Malter-like electron emission. We outline the materials physics (Cr 2 O 3 /Cr 2 O 3-x /Cr(OH) 3 mosaics), quantify expected time scales (∼1 s under illumination), and demonstrate how small damaged regions with enhanced QE can produce persistent hot spots.
High resistances prevent hotspots in parallel input and output operation. Nonvolatile computer memory combines ultrahigh storage density with extremely-low power dissipation. Accommodates about 1 billion bits in square centimeter of surface area. Bit written with expenditure of less than 1 nanojoule of energy and read with even lower energy. Developed for parallel input and output operation.
Results are reported from a study of the stability of poly(arylene ethers) formed in a reaction of 1,3 -bis(4-chlorobenzoyl)benzene and various bisphenols after experiencing long-term exposure to space conditions. Transparent poly(arylene ethers) films were subjected to separate electron and UV bombardments, as were polysulfone and Kapton films for comparisons. The order of exposure to the two types of radiation was reversed for two sample populations. The optical properties and glass transition temperatures of the samples were determined after irradiation. The poly(arylene ethers) films exhibited good resistance to the electron radiation but suffered severe degradation in the UV environment. The loss of optical transmissivity was proportional to the UV radiation dose.
Resistance to damage by energetic electrons increased. Lithiumcounterdoped cells produce more output power than presently-used, conventional n + p silicon cells, after irradiation by MeV electrons. In addition to possessing increased radiation resistance, lithium-counterdoped silicon solar cells show significant performance restoration when annealed at temperature of 100 degrees C. Performances compared after irradiation with 1-MeV electrons. Lithium-counterdoped solar cell offers potential for in situ annealing in space. Process increases electrical power available from solar-cell array during use in space missions subject to degrading particulate environment of space.
In recent years, nonreciprocal transport measurement has emerged as a probe of spin orbit interaction, spin texture, superconductivity, and other fundamental properties of materials. Here, we study the nonlinear Hall effect (NLHE) in Bi 2 Se 3 /CoFeB heterostructures measured by second harmonic voltage method. Magneto-optical Kerr effect measurements demonstrate the origin of the NLHE to be the asymmetric magnon scattering mechanism. Moreover, a linear relation between the nonlinear Hall resistance and the electron phase coherence length of Bi 2 Se 3 is observed between 5 and 50 K. In this work, we propose a phenomenological model that explains the enhancement of the NLHE below 50 K as a result of one-dimensional antilocalization of electrons from spin disorder, enabled by spin-momentum locking and conservation of angular momentum.
While MAX phases offer an exotic combination of ceramic and metallic properties, rendering them a unique class of materials, their applications remain virtually hypothetical. To overcome this shortcoming, a sol–gel based route is introduced that allows access to microwires in the range of tens of micrometers. Thorough structural characterization through XRD, SEM, EDS, and AFM demonstrates a successful synthesis of carbonaceous Cr2GaC wires, and advanced low temperature electronic transport measurements revealed resistivity behavior dominated by amorphous carbon. Here, the tunability of electronic behavior of the obtained microwires is shown by a halide post-synthesis treatment, allowing purposeful engineering of the microwires’ electrical conductivity. Raman studies revealed the polyanionic nature of the intercalated halides and a slow decrease in halide concentration was concluded from time-dependent conductivity measurements. Based on these findings, the process is considered a viable candidate for fabricating chemiresistive halogen gas sensors.
Interactions at the interface between atmospheric pressure plasmas and liquids are being investigated to address applications ranging from nanoparticle synthesis to decontamination and fertilizer production. Furthermore, many of these applications involve activation of droplets wherein the droplet is fully immersed in the plasma and synergistically interacts with the plasma. To better understand these interactions, two-dimensional modeling of radio frequency (RF) glow discharges at atmospheric pressure operated in He with an embedded lossy dielectric droplet (tens of microns in size) was performed. The properties of the sheath that forms around the droplet were investigated over the RF cycle. The electric field in the bulk plasma polarizes the dielectric droplet while the electron drift in the external electric field is shadowed by the droplet. The interaction between the bulk and sheath electric fields produces a maximum in E/N (electric field/gas number density) at the equator on one side of the droplet where the bulk and sheath fields are aligned in the same direction and a minimum along the opposite equator. Due to resistive heating, the electron temperature T e is maximum 45° above and below the equator of the droplet where power deposition per electron is the highest. Although the droplet is, on the average, negatively charged, the charge density on the droplet is positive on the poles and negative on the equator, as the electron motion is primarily due to diffusion at the poles but due to drift at the equator.
Nanocrystalline (or quantum dot) materials hold potential as components of next-generation photovoltaic (PV) devices. The inclusion of quantum dots in PV devices has been proposed as a means to improve the efficiency of photon conversion (quantum dot solar cell), enable low-cost deposition of thin-films, provide sites for exciton dissociation, and pathways for electron transport. Quantum dots are also expected to be more resistant to degradation from electron, proton, and alpha particle radiation than the corresponding bulk material, a requirement for use in space solar ~sells. Chalcopyrite nanocrystals can be produced by low-temperature thermal decomposition of single-source precursors such as (PR3)2CuIn(ER')4 (R = Ph, R' = Et, E = S; R = R' = Ph, E = Se). Single-source precursors are molecules which contain all the necessary elements for synthesis of a desired material. Thermal decomposition of the precursor results in the formation of material with the correct stoichiometry as a nanocrystalline powder or a thin film, often at significantly lower temperatures than those typically employed for thin-film deposition by multi-source evaporation techniques, typically less than 500 C. We show that CuInSz and CuInSe2 nanocrystals can be synthesized from the precursors at temperatures as low as 250 C. The nanocrystals are characterized by optical spectroscopy, X-ray diffraction, and electron microscopy.