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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate

The design, fabrication, and demonstration of a novel Silicon Carbide Low Gain Avalanche Detector (4HSiC LGAD), exhibiting an ultra-fast time response and excellent time resolution, are reported. Here, the use of field plates is proposed to suppress the high electric field caused by the negative bevel-etched angle in 4H-SiC LGADs based on TCAD simulations. Experimental measurements confirm that the field plate significantly increases the breakdown voltage of the 4H-SiC LGADs. Gain and time resolution are measured by using the ultraviolet transient current technique (UV-TCT) showing that 4H-SiC LGADs possess excellent timing performance, with a time resolution better than 35 ps for the injected laser signal with single minimum ionizing particle (MIP) charges generation at room temperature. Additionally, the gain suppression effect in a 4H-SiC LGAD is observed for the first time.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Polysilicon on silicon oxide (poly-Si/SiO x ) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8 x 10^4 to 4.5 x 10^7 cm^-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm^2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm^2.

amorphous Si↗
DOE OSTI2024

An examination of the performance of molecular dynamics force fields: Silicon and silicon dioxide reactive ion etching

Classical molecular dynamics (MD) simulations of plasma-surface interactions were performed of physical sputtering and reactive ion etching (RIE), with predictions based on several force fields. In this paper, we focus mainly on SiO 2 but include some results for Si substrates as well. Here, we compare predictions from these MD simulations to experimental studies of SiO 2 physical sputtering (by Ar + ions), RIE of Si, and RIE of SiO 2 (both using F atoms and Ar + ions). MD results using different published force fields are compared to reported yields from published vacuum beam experiments. The near-surface depth profiles predicted using different force fields are compared. One motivation for the present study is to document the nature and magnitude of differences in the predictions for selected systems and conditions of practical interest.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Shallow-etched thin-film lithium niobate waveguides for highly-efficient second-harmonic generation

High-fidelity periodic poling over long lengths is required for robust, quasi-phase-matched second-harmonic generation using the fundamental, quasi-TE polarized waveguide modes in a thin-film lithium niobate (TFLN) waveguide. Here, a shallow-etched ridge waveguide is fabricated in x-cut magnesium oxide doped TFLN and is poled accurately over 5 mm. The high fidelity of the poling is demonstrated over long lengths using a non-destructive technique of confocal scanning second-harmonic microscopy. We report a second-harmonic conversion efficiency of up to 939 %.W −1 (length-normalized conversion efficiency 3757 %.W −1 .cm −2 ), measured at telecommunications wavelengths. The device demonstrates a narrow spectral linewidth (1 nm) and can be tuned precisely with a tuning characteristic of 0.1 nm/°C, over at least 40 °C without measurable loss of efficiency.

Zhao, Jie (ORCID:0000000306230125)↗
DOE OSTI2021

Room temperature plasma-etching and surface passivation of far-ultraviolet Al mirrors using electron beam generated plasmas

The development of optical systems operating in the far ultraviolet range (FUV, λ=100-200 nm) is limited by the efficiency of passivated aluminum (Al) mirrors. Although it is presently possible to obtain high-reflectivity FUV mirrors through physical vapor deposition, the process involves deposition with substrates at high temperatures, which is technically challenging for large optical elements. A novel passivation procedure for bare Al mirrors is reported. The treatment consisted of using a low-temperature electron-beam generated plasma produced in a gas mixture of Ar and SF6 to etch away the native oxide layer from the Al film, while simultaneously promoting the generation of a thin aluminum tri-fluoride (AlF3) layer on the Al surface. In the first section we analyze the effect of varying both ion energy and SF6 concentration on the FUV reflectance, thickness, composition, and surface morphology of the resulting AlF3 protective layers. In the second section, the reflectivity of samples is optimized at selected important FUV wavelengths for astronomical observations. Notably, samples attained state-of-the-art reflectances of 75% at 108.5 nm (He Lyman γ), 91% at 121.6 nm (H Lyman α), 90% at 130.4 nm (OI), and of 95% at 155.0 nm (C IV). The stability over time of these passivated mirrors is also investigated.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

System and method for repeated metal deposition-dewetting steps to form a nano-particle etching mask producing thicker layer of engraved metasurface

A method and system is disclosed for creating an optical component having a spatially controlled refractive index and uniform anti-reflective layer. The method may involve alternately depositing and dewetting two or more thin metal material layers on the substrate to form a mask having a spatially varying nano-particle distribution, and with an increased thickness beyond what could be achieved using a single, thick layer of the same material. The substrate may then be etched, using the mask, to imprint a spatially patterned nanostructure pattern on a surface the substrate in accordance with the mask.

Feigenbaum, Eyal↗
DOE OSTI2023

Facile etching for single crystal cathode materials

A recycling and synthesis of charge material for secondary batteries generates single-crystal charge materials for producing batteries with greater charge cycle longevity. Charge material particles undergo a heating for fusing or enhancing grain boundaries between polycrystalline particles. The resulting, more well-defined grain boundaries are easily etched by a relatively weak mineral acid solution. The acid solution removes material at the grain boundaries to separate secondary particles into primary particles along the grain boundaries. The resulting single crystal (monocrystalline) charge material particles are washed and filtered, and typically re-sintered to accommodate any needed lithium (lithium carbonate), and result in a charge material with larger surface area, higher lithium diffusivity and lower cation ordering.

Wang, Yan↗
DOE OSTI2024

Growth of Native Oxides of Niobium Thin Films for Superconducting Qubits with Etching Chemistry

Niobium thin films have been broadly applied in building superconducting qubits for quantum computing hardware. While improvements have been made by device engineering efforts, scaling the energy-sensitive quantum system requires materials study for further improvements. In this study, we performed XPS and ToF-SIMS analysis for Nb thin films across samples with different manufacturing techniques. By varying the air exposure time of the samples, this research comparatively investigates the chemical and depth profile of native oxides before and after the etching process. We observe a rapid logarithmic growth of oxide thickness across all samples and the dominant presence and growth of Niobium pentoxide in atomic percentage concentration on the surface. This comparative study provides insight into oxides mitigation strategies and correlation with qubits performance.

Lei, Zhicheng↗
DOE OSTI2024

Self-terminating etching processes for post-processing of 3D printed metal alloys

A process is provided to remove a selective amount of material from a metal part fabricated by additive manufacturing in a self-terminating manner. The process can be used to remove support structures and trapped powder from a metal part as well as to smooth surfaces of a 3D printed metal part. In one embodiment, selected surfaces of the metal part are treated to make the selected surfaces at least one of mechanically and chemically unstable. The unstable portion of the metal support can then be removed chemically, electrochemically, with a pressure differential, and/or through vapor-phase etching. In one embodiment, the metal part may comprise one or more of an aluminum alloy, a titanium alloy, and a copper alloy. The process can be used to modify any fluid or vapor-accessible regions and surfaces of a 3D printed metal part.

Hildreth, Owen J.↗
DOE OSTI2024

Silicon-carbide-on-insulator via photoelectrochemical etching

Silicon carbide on insulator is provided by bonding bulk silicon carbide to a substrate with an oxide-oxide fusion bond, followed by thinning the bulk silicon carbide as needed. A doping-selective etch for silicon carbide is used to improve thickness uniformity of the silicon carbide layer(s).

Lukin, Daniil M.↗
DOE OSTI2025

Dehydrogenation vs Apparent Hydrogenation: Unraveling the Mechanisms of He and O 2 Plasma Etching on Colloidal Nanocrystal Films

Removing organic ligands from colloidal nanoparticles is critical for fabricating solid-state devices, yet accurately quantifying this removal remains a significant analytical challenge. Here, we establish a robust and accessible method for this quantification by calibrating Raman spectroscopy against precise ion beam analysis (IBA) for nanoparticle assemblies (CNAs) processed by helium (He) and oxygen (O 2 ) plasmas. We demonstrate that the calibration curves are remarkably independent of plasma power and pressure, depending critically only on the choice of feed gas. He plasma induces rapid dehydrogenation and cross-linking, evidenced by a much faster decrease in the C–H Raman signal relative to the actual carbon loss. Conversely, O 2 plasma leads to a surprising “apparent hydrogenation”, where the carbon backbone is removed significantly faster than the C–H signal diminishes. This counterintuitive effect is explained by a serial mechanism of oxidative fragmentation; β-scission cleaves the alkyl chains, and subsequent stabilization steps enrich the remaining film with hydrogen-rich methyl-terminated fragments, while carbon is efficiently removed as volatile CO. This work provides calibrated functions that enable the rapid determination of absolute carbon content in processed CNAs using simple Raman spectroscopy with uncertainties of ∼8% for O 2 and ∼12% for He plasma, offering a vital tool for both process diagnostics and fundamental studies of plasma–matter interactions in colloidal nanocrystal films.

Animal feed↗
DOE OSTI2021

WhiteWind: White Etching Crack (WEC) Bearing Failures in Wind Turbine: Cooperative Research and Development, CRADA Number CRD-18-00758 (Final Report)

A WEC is a particularly aggressive, unpredictable and wide spread rolling element bearing failure mode that is common for large multi-megawatt (MW) wind turbines. WEC is considered the single most expensive failure mode for all wind turbine components, and there is currently no commercial solution. The Technical University of Denmark (DTU) is leading the WhiteWind project to investigate WECs through funding provided by the Innovation Fund Denmark. Other project partners include Vestas, SKF, Expanite, Rheinisch-Westfalische Technische Hochschule Aachen University (RWTH Aachen), and Argonne National Laboratory. The objective of the overall project is to develop a new surface engineered WEC-resistant bearing material using novel surface engineering techniques that shall provide a commercially competitive alternative to existing wind turbine bearings. NREL will support the project by providing existing measured bearing loads and validating models of drivetrain loads.

17 WIND ENERGY↗
DOE OSTI2024

Data and Code for Atomic Scale Etching of Diamond: Insights from Molecular Dynamics Simulations

This work investigates the effects of argon ions, hydrogen atoms, and hydrogen ions on the diamond (100) surface using classical molecular dynamics simulations. The purpose of this investigation was to asses plasma processing techniques for applications in quantum device manufacturing. The simulations suggest that combining argon ion smoothing with selective, near threshold energy H removal of amorphous C could be an effective strategy for diamond surface engineering, leading to more reliable and sensitive diamond color center devices. Results were found to differ significantly with interatomic potential, and an analysis of these differences was also carried out. Included in this repository are LAMMPS source files, input scripts, and plotting scripts required to reproduce the data. Also included are the output data required to make all the plots included in the associated publication.

Brenner↗