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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Center for the development of commercial crystal growth in space

The second year of operation of the Center for Commercial Crystal Growth in Space is described. This center is a consortium of businesses, universities and national laboratories. The primary goal of the Center's research is the development of commercial crystal growth in space. A secondary goal is to develop scientific understanding and technology which will improve commercial crystal growth on earth. In order to achieve these goals the Center's research is organized into teams by growth technique; melt growth, solution growth, and vapor growth. The melt growth team is working on solidification and characterization of bulk crystals of gallium arsenide and cadmium telluride. They used high resolution X-ray topography performed at the National Synchrotron Light Source at Brookhaven National Laboratory. Streak-like features were found in the diffraction images of semi-insulating undoped LEC GaAs. These were shown to be (110) antiphase boundaries, which have not been reported before but appear to be pervasive and responsible for features seen via less-sensitive characterization methods. The results on CdTe were not as definitive, but indicate that antiphase boundaries may also be responsible for the double peaks often seen in X-ray rocking curves of this material. A liquid encapsulated melt zone system for GaAs has been assembled and techniques for casting feed rods developed. It was found that scratching the inside of the quartz ampoules with silicon carbide abrasive minimized sticking of the GaAs to the quartz. Twelve floating zone experiments were done.

Wilcox, William R.↗
NASA NTRS1983

Microgravity silicon zoning investigation

A resistance heated zoner, suitable for early zoning experiments with silicon, was designed and put into operation. The initial power usage and size was designed for an shown to be compatible with payload carriers contemplated for the Shuttle. This equipment will be used in the definition and development of flight experiments and apparatus for float zoning silicon and other materials in microgravity.

Kern, E. L.↗
NASA NTRS1971

Hall effect study of electron irradiated Si(Li)

Measurement of the Hall coefficient as a function of temperature between 15 and 300 K allows the separate determination of donor and acceptor concentrations in silicon samples which were irradiated at 240 K by 1-MeV electrons and then thermally annealed at 300 K. In both lithium- and phosphorus-doped silicon irradiation increased the acceptor concentration and decreased the donor concentration due to the formation of vacancy donor pairs. Annealing did not change either concentration in phosphorus-doped silicon and caused both concentrations to decrease in silicon doped with moderate amounts of lithium. In addition to this, in both lithium- and phosphorus-doped silicon the concentration and energy level of the A center were measured at each point in the sample's history. This experiment was limited to float-zoned silicon doped with less than 6 x 10 to the 14th power donors per cu cm.

Stannard, J.↗
NASA NTRS1971

Study to determine and improve design for lithium-doped solar cells

Solar cell experiments show that a single lithium density parameter, the lithium density gradient, calculated from nondestructive capacitance measurements, provides the basis for accurate predictions of lithium cell behavior in a 1-MeV electron environment for fluences ranging between 3 X 10 to the 13th power e/sq cm and 3 X 10 to the 15th power/e sq cm. The oxygen-rich (quartz crucible) lithium cell with phosphorous starting dopant and lithium gradient between approximately 5 X 10 to the 18th power and 1.5 x 10 to the 19th power/cm to the 4th power was found superior in performance to the commercial 10 ohm-cm n/p control cells. Post-recovery stability of oxygen-rich cells was satisfactory. An average post-recovery current drop of approximately 1 mA was observed for 70 crucible cells after 1 year-equivalent storage time at 80 C. In contrast the oxygen-poor (float zone and Lopex) lithium cells displayed spotty initial performance and stability problems at room temperature.

Brucker, G.↗
NASA NTRS1972

Silicon solar cell development and radiation effects study for low temperature and low illumination intensity operation, volume 2

The results are presented of a study to determine the effect of in-situ proton irradiation upon low temperature, low intensity performance of several cell types. The cell types were selected in an attempt to distinguish variations in temperature-dependent radiation resistance which could be attributed to the n-p or p-n structure, diffused or implanted junctions, crucible grown or float-zone type base material, and high or low base resistivity. The results indicate that while expected variations of performance occur at room temperature, all cell types degrade more or less similarly at lower temperatures with normalized degradation becoming increasingly rapid as temperature is reduced. Recommendations for an optimized cell for Jupiter probe use are included along with a definition of the testing required on these cells to insure good performance characteristics.

Kirkpatrick, A. R.↗
NASA NTRS1972

The observation of damage regions produced by neutron irradiation in lithium-doped silicon solar cells.

Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).

Ghosh, S.↗
NASA NTRS1971

Lithium - An impurity of interest in radiation effects of silicon.

Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.

Naber, J. A.↗
NASA NTRS1972

Directional solidification of eutectic composites in space environment

The Ni-Ni3Ta eutectic and a nickel-base alloy containing 30 wt pct Ta were solidified unidirectionally in an electron beam floating zone melting apparatus. It was found that the volume fraction of the Ni3Ta phase in the Ni-Ni3Ta eutectic mixture was increased from 7.6 to 36 volume pct in agreement with the theory as predicted. Tensile properties of the randomly solidified and unidirectionally solidified Ni-Ni3Ta eutectic were determined as function of solidification rate and temperature. It was found that the ultimate tensile strength decreased as both the test temperature and solidification rate increased. An elongation of 40 pct was obtained for a nickelbase alloy containing 30 wt at room temperature. This unusually large elongation was attributed to the superplastic behavior of the alloy. The critical currents versus the external fields at 2.5, 3.0, 3.5 and 4.2 deg for the unidirectionally solidified Pb-Sn eutectic were measured. The values of critical fields at zero critical currents were obtained by extrapolation.

Yue, A. S.↗
NASA NTRS1973

Growth of a single crystal ribbon in space

Three critical technological areas associated with adapting the method of pulling signal crystal silicon ribbon to a space environment were investigated. Basic parameters such as the magnitude of the forces required and the coupling between thermal and force are discussed. The design of a ribbon puller is described, and the problems encountered are also discussed. The force fields in the vicinity of a coil were characterized and results of attempts to pull ribbon are described. The results of the one experiment to grow a conventional float zone crystal in an external static magnetic field are presented.

Padovani, F. A.↗
NASA NTRS1974

Skylab 3 and 4 science demonstrations: Preliminary report

Twelve science demonstrations were accomplished on the Skylab 3 and 4 missions. These were defined in response to crew requests for time-gap fillers and were designed to be accomplished using onboard equipment. The following 12 are described and the preliminary results are given: liquid floating zone; diffusion in liquids; ice melting; immiscible liquids; liquid films; gyroscope; Rochelle salt growth; deposition of silver crystals; fluid mechanics series; neutron environment; orbital mechanics; and charged particle mobility.

Bannister, T. C.↗
NASA NTRS1974

Analytics of crystal growth in space

Two crystal growth processes considered for spacelab experiments were studied to anticipate and understand phenomena not ordinarily encountered on earth. Computer calculations were performed on transport processes in floating zone melting and on growth of a crystal from solution in a spacecraft environment. Experiments intended to simulate solution growth at micro accelerations were performed.

Wilcox, W. R.↗
NASA NTRS1975

The study of single crystals for space processing and the effect of zero gravity

A study was undertaken to analyze different growth techniques affected by a space environment. Literature on crystal growth from melt, vapor phase and float zone was reviewed and the physical phenomena important for crystal growth in zero-gravity environment was analyzed. Recommendations for potential areas of crystal growth feasible for space missions are presented and a bibliography of articles in the area of crystal growth in general is listed.

Lal, R. B.↗
NASA NTRS1975

Research and development of low cost processes for integrated solar arrays

Si reduction, purification and sheet generation work has been concentrated on gaining information about a reduction process combined with purification (higher purity arc furnace with gas blowing and gradient freezing), transport process with purification and polycrystal sheet growth potential (SiF2), plastic deformation for sheet generation, and float zone sheet recrystallization.

Wolf, M.↗