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At least 163 records · Page 9

Kinetic-Energy Distribution of D(2p) Atoms from Analysis of the D Lyman-Alpha Line Profile

The kinetic-energy distribution of D(2p) atoms resulting from electron-impact dissociation of D2 has been measured. A high-resolution vacuum ultraviolet spectrometer was employed for the first measurement of the D Lyman-alpha (D L(alpha)) emission line profiles at 20- and 100-eV excitation energies. Analysis of the deconvoluted line profile of D L(alpha) at 100 eV reveals the existence of a narrow line central peak of 29+/-2 mA full width at half maximum and a broad pedestal wing structure about 190 mA wide. The wings of the line can be used to determine the fast atom distribution. The wings of D L(alpha) arise from dissociative excitation of a series of doubly excited states that cross the Franck-Condon region between 23 and 40 eV. The fast atom distribution at 100-eV electron impact energy spans the energy range from 1 to 10 eV with a peak value near 6 eV. Slow D(2p) atoms characterized by a distribution function with peak energy near 100 meV produce the central peak profile, which is nearly independent of the impact energy. The deconvoluted line profiles of the central peak at 20 eV for dissociative excitation of D2 and H2 are fitted with an analytical function for use in calibration of space flight instrumentation equipped with a D/H absorption cell. The kinetic-energy and line profile results are compared to similar measurements for H2. The absolute cross sections for the line center (slow atoms) and wings (fast atoms) and total emission line profile were measured from threshold to 400 eV. Analytical model coefficients are given for the energy dependence of the measured slow atom cross section.

Ciocca, M.↗

Fast Nitrogen Atoms from Dissociative Excitation of N2 by Electron Impact

The Doppler profiles of one of the fine structure lines of the N I (1200 A) g (sup 4)S(sup 0)-(sup 4)P multiplet and of the N II (1085 A) g (sup 3)p(sup O)-(sup 3)D multiplet have been measured. Excitation of the multiplets is produced by electron impact dissociative excitation of N2. The experimental line profiles are evaluated by fast Fourier transform (FFT) techniques and analysis of the profiles yields the kinetic energy distribution of fragments. The full width at half maximum (FWHM) of N I (1200 A) increases from 27+/-6 mA at 30 eV to 37+/-4 mA at 100 eV as the emission cross section of the dissociative ionization excitation process becomes more important relative to the dissociative excitation process. The FWHM of the N II (1085 A) line is 36+/-4 mA at 100 eV. For each multiplet the kinetic energy distribution function of each of the two fragment N atoms (ions) is much broader than thermal with a mean energy above 1.0 eV. The dissociation process with the largest cross section is predissociation and predominantly produces N atoms with kinetic energy distributions having mean energies above 0.5 eV. Dissociative processes can lead to a substantial escape flux of N I atoms from the satellites, Titan and Triton of the outer planets.

Ajello, Joseph M.↗

Experiment 1: Orbital Processing of High-Quality Zn-Alloyed CdTe Compound Semiconductors

Zinc-alloyed cadmium telluride (Zn:CdTe) crystals were grown in unit gravity and in microgravity for comparative analysis. Two crystals were grown on USML-1/STS-50 in 1992, and two additional crystals were grown on USML-2/STS-73 in 1995. The Crystal Growth Furnace (CGF) in the seeded Bridgman-Stockbarger crystal growth geometry was utilized on both missions. Crystals grown on USML-1/STS-50 were found to have solidified with partial wall contact due to the near-absence of the hydrostatic pressure in microgravity, a residual g-vector that was not axial, and the nonwetting sample/ampoule wetting conditions. Crystals grown on USML-2/STS-73 included: a sample/ampoule identical to the USML-1/STS-73 sample/ampoule, with the addition of a restraining spring to simulate hydrostatic pressure internally, and a tapered ampoule which accomplished 2.2 cm of crystal growth without wall contact. Infrared transmission of all ground and flight samples was found to be 63-66 percent, very close to the theoretical 66 percent, suggesting good stoichiometric control. Infrared microscopy confirmed that the primary precipitates were Te and their size (1-10 microns) and density suggested that the flight- and ground-base samples experienced similar thermal histories. Longitudinal macrosegregation, calculated using scaling analysis, was predicted to be low. Nearly diffusion controlled growth was achieved even in unit gravity and macrosegregation data could be fit with a diffusion controlled model. Radial segregation was monitored and was found to vary with fraction solidified, particularly through the shoulder region, where the sample cross section was varying significantly. It was also disturbed in the flight samples in regions where asymmetric wall contact was noted. In regions where a steady state was established, the radial segregation was invariant within our experimental measurement error. Flight samples were found to be much higher in structural perfection than samples processed in unit gravity under identical growth conditions. In regions where solidification had occurred without wall contact, the free surfaces evidenced virtually no twinning, although twins appeared in the flight samples in regions of wall contact and were pervasive in the ground samples. These results were confirmed using optical microscopy and synchrotron x-ray white beam topography. Full-width half-maximum rocking curve widths (FWHM), recorded in arc-seconds, were significantly reduced from 20 a-s (1 g) to 9 a-s (micro-g) for the best regions of the crystals. The 9 a-s (FWHM) rocking curve value in the unconfined flight samples equals the best value reported terrestrially for this material. The ground samples exhibited a fully developed (111)[110] dislocation mosaic structure, whereas dislocations within the flight samples were discrete and no mosaic structure was evident. The defect density was quantitatively reduced from 75,000 (1 g) to 800 (micro-g) +/-50 percent. Dislocation etch pit density results were confirmed using transmission synchrotron white beam and monochromated beam topography. The low defect density is thought to have resulted from the near absence of hydrostatic pressure, which allowed the molten boule to solidify with little or no wall contact. This minimized the transfer of hoop stresses during solidification and post-solidification processing.

Larson, D. J., Jr.↗

Line Profile of H Lyman (alpha) from Dissociative Excitation of H2 with Application to Jupiter

Observations of the H Lyman(alpha) (Ly-alpha) emission from Jupiter have shown pronounced emissions, exceeding solar fluorescence, in the polar aurora and equatorial "bulge" regions. The H Ly-alpha line profiles from these regions are broader than expected, indicating high-energy processes producing fast atoms as determined from the observed Doppler broadening. Toward understanding that process a high-resolution ultraviolet (UV) spectrometer was employed for the first measurement of the H Ly-alpha emission Doppler profile from dissociative excitation of H2 by electron impact. Analysis of the deconvolved line profile reveals the existence of a narrow central peak of 40 +/- 4 mA full width at half maximum and a broad pedestal base about 240 mA wide. Two distinct dissociation mechanisms account for this Doppler structure. Slow H(2p) atoms characterized by a distribution function with peak energy near 80 meV produce the peak profile, which is nearly independent of the electron impact energy. Slow H(2p) atoms arise from direct dissociation and predissociation of singly excited states which have a dissociation limit of 14.68 eV. The wings of H Ly-alpha arise from dissociative excitation of a series of doubly excited states which cross the Franck-Condon region between 23 and 40 eV. The profile of the wings is dependent on the electron impact energy, and the distribution function of fast H(2p) atoms is therefore dependent on the electron impact energy. The fast atom kinetic energy distribution at 100 eV electron impact energy spans the energy range from 1 to 10 eV with a peak near 4 eV. For impact energies above 23 eV the fast atoms contribute to a slightly asymmetric structure of the line profile. The absolute cross sections of the H Ly-alpha line peak and wings were measured over the range from 0 to 200 eV. Analytic model coefficients are given for the measured cross sections which can be applied to planetary atmosphere auroral and dayglow calculations. The dissociative excitation process, while one contributing process, appears insufficient by itself to explain the line broadening observed at Jupiter.

Ajello, Joseph M.↗

Low Temperature Photoluminescence of PVT Grown ZnSe and ZnSeTe

ZnSe and ZnSeTe single crystals were grown by physical vapor transport (PVT) technique horizontally and vertically. The grown ZnSe and ZnSeTe single crystals were characterized by low temperature photoluminescence at 5 to 10 K using the 3.4 eV emission of an argon laser. The intensity of the sharp near band edge defect lines at 2.799, 2.783 eV and the intrinsic free exciton line at 2.802 eV were mapped on various crystal surfaces with different orientations to the gravitational field. The results show the effects of gravity vector orientation on the defect segregation. Comparison of the photoluminescence spectra of the ZeSe crystal before and after annealing in the Zn vapor shows that the 2.783 eV line of ZnSe crystal is related to the zinc vacancy. The photoluminescence spectra of the ternary ZnSeTe crystal were characterized by a single broad band from 2.2 to 2.4 eV, with a Full Width at Half Maximum (FWHM) of about 100 meV. The temperature dependence of the peak position and intensity were determined from 7 to 150 K.

Wang, Ling Jun↗

Growth of Homoepitaxial ZnO Semiconducting Films

As a high temperature semiconductor, ZnO has been used for many applications such as wave-guide, solar cells, and surface acoustic wave devices. Since the ZnO material has an energy gap of 3.3 eV at room temperature and an excitonic binding energy (60 meV) that is possible to make excitonic lasering at room temperature a recent surge of interest is to synthesize ZnO films for electro-optical devices. These applications require films with a smooth surface, good crystal quality, and low defect density. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystals are grown by the hydrothermal method. Substrates are mechanically polished and annealed in air for four hours before deposited films. The annealing temperature-dependence of ZnO substrates is studied. Films are synthesized by the off-axis reactive sputtering deposition. The films have very smooth surface with a roughness </= 5 nm on a 5 micrometers x 5 micrometers area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than the crystal substrate. The film quality is determined by measuring the film resistivity, the Hall mobility, carrier densities and the energy band gap. The properties of ZnO films grown of (0001) ZnO and (0001) sapphire substrates will be also compared and discussed in the presentation.

Zhu, Shen↗

Pressure Effect in ZnO Films Using Off-Axis Sputtering Deposition

ZnO films are deposited on (0001) sapphire, (001) Si and quartz substrates using the off-axis reactive magnetron sputtering deposition. Based on film thickness measurements, three transport regions of sputtered particles are observed when films are deposited in the pressure regions of 5 mtorr - 150 mtorr. X-ray diffraction, scanning probes microscopy, and electrical measurements are also used to characterize these films. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. The epitaxial films deposited at high pressure reveal a flat surface with some hexagonal facets. The density of hexagonal facets decreases when the growth pressure is reduced. The resistivity of these epitaxial films also depends on the growth pressures. A relationship between the pressure effects and film properties are discussed.

Zhu, Shen↗

Surface Texture and Structure of ZnO Films Synthesized by Off-Axis Sputtering Deposition

Morphology and structure of ZnO films deposited on (0001) sapphire and glass substrates by off-axis sputtering are investigated at various temperatures and pressures. All films show highly textured structures on glass substrates and epitaxial growth on sapphire substrates. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 degrees. In textured films, it rises to several degrees. The trend of surface textures in films grown at low pressures is similar to those grown at high temperatures. A morphology transition from large well-defined hexagonal grains to flat surface was observed at a pressure of 50 mtorr and temperature of 550 C. The experiment results are explained by the transport behavior of depositing species.

Zhu, Shen↗

Growth of Homoepitaxial ZnO Semiconducting Films

As a high temperature wide-band-gap (3.3 eV at room temperature) semiconductor, ZnO has been used for many applications such as wave-guides, solar cells, and surface acoustic wave devices, Since ZnO has a 60 meV excitonic binding energy that makes it possible to produce excitonic lasing at room temperature, a recent surge of interest is to synthesize ZnO films for UV/blue/green laser diodes. These applications require films with a smooth surface, good crystal quality, and low defect density. Thus, homoepitaxial film growth is the best choice. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystal substrates grown by the hydrothermal method are mechanically polished and annealed in air for four hours before the films are deposited. The annealing temperature-dependence on ZnO substrate morphology and electrical properties is investigated. Films are synthesized by off-axis reactive sputtering deposition. This produces films that have very smooth surfaces with roughness less than or equal to 5 nm on a 5 microns x 5 microns area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than that of the crystal substrate. Films are also characterized by measuring resistivity, optical transmittance, and photoluminescence. The properties of ZnO films grown on (0001) ZnO and (0001) sapphire substrates will also be compared and discussed.

Zhu, Shen↗

Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

Zhu, Shen↗

High Resolution Emission Spectroscopy of the Alpha Pi-1 - Chi Sigma-1(+) Fourth Positive Band System of CO from Electron Impact

We report electron-impact induced fluorescence spectra [300 mA full width at half maximum (FWHM)] of CO for 20 and 100 eV impact energies of the spectral region of 1300 to 2050 A and high resolution spectra (FWHM) of the v'=5 to v"=l and the v'=3 to v"=O bands showing that the rotational structure of the band system are modeled accurately. The excitation function of the (0,1) band (1597 A) was measured from electron impact in the energy range from threshold to 750 eV and placed on an absolute scale from modem calibration standards.

Beegle, Luther W.↗

On-Orbit Calibration of ADEOS OCTS with an AVIRIS Underflight

The Ocean Color Temperature Scanner (OCTS) onboard the Advanced Earth Observation Satellite (ADEOS) was launched on August 17, 1996. Calibration of OCTS is required for use of the on-orbit measured data for retrieval of physical properties of the ocean. In the solar reflected portion of the electromagnetic spectrum, OCTS measures images with nominally 700-m spatial resolution through eight multispectral bands. The objective of this research was to establish the absolute radiometric calibration of OCTS on orbit through an underflight by the Airborne Visible/Infrared Imaging Spectrometer (AVIRIS). AVIRIS is a NASA earth-observing imaging spectrometer designed, built and operated by the Jet Propulsion Laboratory (JPL). AVIRIS acquires data from 20-km altitude on a NASA ER-2 aircraft, above most of the Earth's atmosphere. AVIRIS measures the solar reflected spectrum from 370 nm to 2500 nm through 224 contiguous spectral channels. The full width at half maximum (FWHM) of the spectral channels is nominally 10-nm. AVIRIS spectra are acquired as images of 11 km by up to 800 km extent with 20-m spatial resolution. The high spectral resolution of AVIRIS data allows direct convolution to the spectral response functions of the eight multispectral bands of OCTS. The high spatial resolution of AVIRIS data allows for spatial re-sampling of the data to match the ADEOS sensors spatial resolution. In addition, the AVIRIS high spatial resolution allows assessment of the scaling effects due to environmental factors of thin cirrus clouds, sub-pixel cloud cover, white caps, ocean foam, sun-glint, and bright-target adjacency. The platform navigation information recorded by AVIRIS allows calculation of the position and observation geometry of each spectrum for matching to the OCTS measurement. AVIRIS is rigorously characterized and calibrated in the laboratory prior to and following the flight season. The stability and repeatability of AVIRIS calibration have been validated through an extensive series of inflight calibration experiments. In the OCTS portion of the spectrum, using pre-and post-flight runway calibrations of AVIRIS coupled with the on-board calibrator an absolute calibration accuracy of better than 3% spectral, 2% radiometric and 5% spatial has been achieved. An analogous satellite underflight calibration experiment was performed with AVIRIS and the Optical Sensor (OPS) onboard the Japanese Earth Resources Satellite (JERS).

Green, Robert O.↗

Inflight Validation of AVIRIS Calibration in 1996 and 1997

The Airborne Visible/Infrared Imaging Spectrometer (AVIRIS) measures spectral radiance in the solar reflected spectrum from 400 to 2500 nm. Spectra are measured through 224 spectral channels with nominally 10-nm sampling and 10-nm full width at half maximum (FWHM). From a NASA ER-2 aircraft flying at 20,000 m altitude, these spectra are acquired as images with an 11-km width by up to 800-km length. The spatial sampling is 17 m, and the instantaneous field of view (IFOV) 20 m. The objective of AVIRIS is to acquire calibrated spectra that are used to derive properties of the Earth's land, water, and atmosphere for scientific research and environmental applications. To achieve this objective, the AVIRIS spectra must be calibrated. The AVIRIS sensor is calibrated in the laboratory before and after each flight season, however, the spectra acquired by AVIRIS for science investigators are acquired in the Q-bay of the ER-2 at 20 km altitude. The objective of the AVIRIS inflight calibration experiment is to validate the calibration of AVIRIS spectral images in the low pressure, low temperature operating environment of the ER-2. Inflight calibration experiments have been orchestrated for AVIRIS in every year of flight operations.

Green, Robert O.↗

On-Orbit Calibration of ADEOS OCTS with an AVIRIS Underflight

The Ocean Color Temperature Scanner (OCTS) onboard the Advanced Earth Observation Satellite (ADEOS) was launched on August 17, 1996. Calibration of OCTS is required for use of the on-orbit measured data for retrieval of physical properties of the ocean. In the solar reflected portion of the electromagnetic spectrum, OCTS measures images with nominally 700-m spatial resolution through eight multispectral bands. The objective of this research was to establish the absolute radiometric calibration of OCTS on orbit through an underflight by the Airborne Visible/Infrared Imaging Spectrometer (AVIRIS). AVIRIS is a NASA Earth-observing imaging spectrometer designed, built and operated by the Jet Propulsion Laboratory (JPL). AVIRIS acquires data from 20-km altitude on a NASA ER-2 aircraft, above most of the Earth's atmosphere. AVIRIS measures the solar reflected spectrum from 370 nm to 2500 nm through 224 contiguous spectral channels. The full width at half maximum (FWHM) of the spectral channels is nominally 10-nm. AVIRIS spectra are acquired as images of 11 km by up to 800 km extent with 20-m spatial resolution. The high spectral resolution of AVIRIS data allows direct convolution to the spectral response functions of the eight multispectral bands of OCTS. The high spatial resolution of AVIRIS data allows for spatial re-sampling of the data to match the ADEOS sensors spatial resolution. In addition, the AVIRIS high spatial resolution allows assessment of the scaling effects due to environmental factors of thin cirrus clouds, sub-pixel cloud cover, white caps, ocean foam, sun-glint, and bright-target adjacency. The platform navigation information recorded by AVIRIS allows calculation of the position and observation geometry of each spectrum for matching to the OCTS measurement. AVIRIS is rigorously characterized and calibrated in the laboratory prior to and following the flight season. The stability and repeatability of AVIRIS calibration have been validated through an extensive series of inflight calibration experiments. In the OCTS portion of the spectrum, using pre- and post-flight runway calibrations of AVIRIS coupled with the on-board calibrator an absolute calibration accuracy of better than 3% spectral, 2% radiometric, and 5% spatial, has been achieved. An analogous satellite underflight calibration experiment was performed with AVIRIS and the Optical Sensor (OPS) onboard the Japanese Earth Resources Satellite (JERS).

Green, Robert O.↗

The High Mosaicity Illusion: Revealing the True Physical Characteristics of Macromolecular Crystals

An experimental system and software have been developed for simultaneously measuring the diffraction resolution and mosaic spread of macromolecular crystals. Hundreds of reflection profiles over a wide resolution range were rapidly measured by using a charge coupled device (CCD) area detector in combination with superfine phi slicing data collection. The contributions of the X-ray beam to the reflection widths were minimized by using a highly-parallel, highly-monochromatic synchrotron source. These contributions and Lorentz effects were evaluated and deconvoluted from the recorded data. Data collection and processing is described. From one degree of superfine phi slice data collected on a crystal of manganese superoxide dismutase the mosaicity of 261 reflections were measured. The average mosaicity was 0.0101 degrees (0.0035) at the full-width-at-half-maximum (FWHM) and ranged from 0.0011 degrees to 0.0188 degrees. Each reflection profile was individually fit with two gaussian profiles with the first gaussian contributing 55% and the second contributing 35% of the reflection. On average, the mosaicity of the first gaussian was 0.0054 degrees (0.0015) and the second was 0.0061 degrees (0.0023). The mosaicity of the crystal was anisotropic with fh, f k, and fl values of 0.0068 degrees, 0.0140 degrees and 0.0046 degrees, respectively at the FWHM. The anisotropic mosaicity analysis indicates that the crystal is the most perfect in the I direction which corresponds to the favored growth direction of the crystal.

Bellamy, Henry↗

High-Resolution Studies of Extreme-Ultraviolet Emission from CO by Electron Impact

We report a high-resolution study (0.0036 nm full width at half maximum) of electron-impact-induced emission spectra of CO at 30-, 75-, and 100-eV electron-impact energies. The spectral features were acquired in optically thin conditions. At the specified resolution, attainable with our 3-m vacuum ultraviolet spectrometer, we observe rotationally resolved emission bands of CO in the extreme ultraviolet, from the vibronic states B (sup 1)sigma(sup +)(0), C (sup 1)sigma(sup+)(0), and E (sup 1)pi(0), to the ground state X (sup 1)sigma(sup +)(0). A simple model of these bands, based on the Honl-London factors and the rotational constants, is constructed and is shown to be in good agreement with the observed spectra. The predissociation yield for the E (sup 1)pi electronic state has been determined, showing that the E state has the largest predissociation cross section of CO for all singlet-state Rydberg series members. The excitation function of the [E (sup 1)pi(0) yields X (sup 1)sigma(sup +)(0)] transition, in the 0-800-eV impact energy range, is measured, permitting determination of the oscillator strength by using a modified Born approximation analytical fit.

Ciocca, Marco↗

A Compact X-Ray System for Macromolecular Crystallography

We describe the design and performance of a high flux x-ray system for a macromolecular crystallography that combines a microfocus x-ray generator (40 micrometer full width at half maximum spot size at a power level of 46.5 W) and a collimating polycapillary optic. The Cu Ka lpha x-ray flux produced by this optimized system through a 500,um diam orifice is 7.0 times greater than the x-ray flux previously reported by Gubarev et al. [M. Gubarev et al., J. Appl. Crystallogr. 33, 882 (2000)]. The x-ray flux from the microfocus system is also 2.6 times higher than that produced by a rotating anode generator equipped with a graded multilayer monochromator (green optic, Osmic Inc. CMF24-48-Cu6) and 40% less than that produced by a rotating anode generator with the newest design of graded multilayer monochromator (blue optic, Osmic, Inc. CMF12-38-Cu6). Both rotating anode generators operate at a power level of 5000 W, dissipating more than 100 times the power of our microfocus x-ray system. Diffraction data collected from small test crystals are of high quality. For example, 42 540 reflections collected at ambient temperature from a lysozyme crystal yielded R(sub sym)=5.0% for data extending to 1.70 A, and 4.8% for the complete set of data to 1.85 A. The amplitudes of the observed reflections were used to calculate difference electron density maps that revealed positions of structurally important ions and water molecules in the crystal of lysozyme using the phases calculated from the protein model.

Gubarev, Mikhail↗

Radiometry Measurements of Mars at 1064 nm Using the Mars Orbiter Laser Altimeter

Measurements by the Mars Orbiter Laser Altimeter (MOLA) on board the Mars Global Surveyor (MGS) may be used to provides a radiometric measurement of Mars in addition to the topographic measurement. We will describe the principle of operation, a mathematical model, and the receiver calibration in this presentation. MOLA was designed primarily to measure Mars topography, surface roughness end the bidirectional reflectance to the laser beam. To achieve the highest sensitivity the receiver detection threshold is dynamically adjusted to be as low as possible while keeping a predetermined false alarm rate. The average false alarm rate 29 monitored in real time on board MOLA via a noise counter, whose output is fed to the threshold control loop. The false alarm rate at a given threshold is a function of the detector output noise which is the sum of the photo detector, shot noise due to the background light seen by the detector and the dark noise. A mathematical model has been developed that can be used to numerically solve for the optical background power given the MOLA threshold setting and the average noise count. The radiance of Mars can then be determined by dividing the optical power by the solid angle subtended by the MOLA receiver, the receiver optical band-width, end the Mars surface area within the receiver field of view. The phase angle which is the sun-Mars-MOLA angle is available from the MGS database. MOLA also measures simultaneously the bidirectional reflectance of Mars vie its 106-lum loser beam at nadir with nearly zero phase angle. The optical bandwidth of the MOLA receiver is 2um full width at half maximum (FWHM) and centered at 106-lum. The receiver field of view is 0.95mrad FWHM. The nominated spacecraft altitude is 100km and the ground track speed is about 3km/s. Under normal operation, the noise counter are read and the threshold levels are updated at 1Hz. The receiver sensitivity is limited by the detector dark noise to about 0.1nW, which corresponds to less than 2% the maximum radiance during daytime from the brightest area on Mars. The results from the mathematical model agree well with the prelaunch measurements at several calibrated optical power levels. The radiance of sunlit Mars estimated with this technique correlates well with the measurement from the MGS. Thermal Emission Spectrometer (TES) and the Hubble Space Telescope at similar wavelength.

Sun, Xiao-Li↗