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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Circuit for Communication over DC Power Line Using High Temperature Electronics

A high temperature communications circuit includes a power conductor for concurrently conducting electrical energy for powering circuit components and transmitting a modulated data signal, and a demodulator for demodulating the data signal and generating a serial bit stream based on the data signal. The demodulator includes an absolute value amplifier for conditionally inverting or conditionally passing a signal applied to the absolute value amplifier. The absolute value amplifier utilizes no diodes to control the conditional inversion or passing of the signal applied to the absolute value amplifier.

Krasowski, Michael J.↗
NASA NTRS1991

High temperature power electronics for space

A high temperature electronics program at NASA Lewis Research Center focuses on dielectric and insulating materials research, development and testing of high temperature power components, and integration of the developed components and devices into a demonstrable 200 C power system, such as inverter. An overview of the program and a description of the in-house high temperature facilities along with experimental data obtained on high temperature materials are presented.

Hammoud, Ahmad N.↗
DOE OSTI2024

Technology Feasibility of High-Temperature Heat Pumps for Industrial Drying Process in the US

High-temperature heat pumps are a prospective technology for electrifying and decarbonizing industrial drying processes. This study investigates the technological potential of HTHPs in replacing fossil-fuel burners or steam boilers in industrial spray dryers. The performance of HTHPs with three configurations was investigated, including high high-temperature heat pump boosted with an electric air heater, a steam-generating high-temperature heat pump with multi-stage mechanical vapor compressions, and transcritical high-temperature heat pumps. R1336mzz(Z) is used as the refrigerant in both subcritical and transcritical high-temperature heat pumps, and R717 is used as the working fluid in the mechanical vapor recompression and the heat transfer fluids. Thermodynamic models are built to evaluate the energy efficiency of HTHPs. A case study was carried out on an industrial spray dryer integrated with a waste heat recuperator, where the HTHPs are used to recover precooled air with a dew point of 40℃ and supply heat for drying air at 200℃. For a high-temperature heat pump boosted with an electric air heater, a higher system-level COP is achieved with a high supply temperature from high-temperature heat pump. For a high-temperature heat pump with mechanical vapor recompressions, larger temperature drops in the flashing tank provide higher heat capacities but almost constant values of the coefficient of performance. For a transcritical high-temperature heat pump, an optimum discharge pressure exists for the temperature profiles within the gas cooler and the coefficient of performance. The transcritical high-temperature heat pump provides the best energy efficiency among the three configurations. The theoretical results prove the technical feasibility of high-temperature heat pumps in industrial air-drying applications. .

Wang, Pengtao↗
NASA NTRS1988

Unified constitutive model development for metal matrix composites at high temperature

Structural alloys used in high temperature applications exhibit complex thermomechanical behavior that is time dependent and hereditary. Recent attention is being focused on metal matrix composite materials for high temperature applications where they exhibit all the complexities of conventional alloys and their strong anisotropy adds further complexities. Here, a proven constitutive model for isotropic materials in which the inelastic strain rate and internal state are expressible as gradients of a dissipation potential is taken to depend on invariants that reflect local transverse isotropy. Applications illustrate the capability of the theory of representing the time dependent, hereditary, anisotropic behavior typical of these materials at high temperature.

Robinson, D. N.↗
NASA NTRSDate not supplied

High-Cycle Fatigue Behavior of SiC-based Ceramic Matrix Composites (CMCs) at High Temperatures

High-cycle fatigue (HCF) behavior of a melt-infiltrated, pre-preg SiC/SiC ceramic matrix composite (CMC) was investigated using dogbone tensile specimens without and with simulated cooling holes at 1500 and 2400 °F. The CMC material used for this study was fabricated by GE Aviation and had a ply configuration of [0/90/0]3. HCF tests were conducted with an R-ratio of 0.6 and a cyclic frequency of 30 Hz. Runout in HCF was defined as 30 million cycles. Monotonic tensile tests were conducted at room temperature (RT) on as-received CMC specimens and on runout HCF specimens to determine residual tensile strengths. Digital image correlation (DIC) and acoustic emission (AE) techniques were used to monitor the initiation and progression of damage in RT tensile tests on specimens with and without holes. Microscopy was performed on the polished edge of specimens without cooling holes and on the polished face of specimens with cooling holes that were tested in HCF and achieved runout. Comparisons were made with baseline specimens. Fractography was performed to examine the fracture surfaces of samples that failed under different loading conditions.

Ceramic Matrix Composites↗
NASA NTRS1994

Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

Vasquez, Richard P.↗
DOE OSTI2025

Optimizing ensemble NV − spin properties of fluorescent diamond microparticles by systematic low pressure high temperature annealing

Low pressure high temperature annealing is a means for driving nitrogen and defect diffusion in diamond to reduce internal lattice damage without the need for technically complicated high-pressure cells. Herein, we perform a systematic time (5, 15, and 30 min) and temperature (1200 °C–1800 °C) study of effects of low-pressure high temperature annealing on photoluminescence, spin concentrations, and spin relaxation properties of NV centers in ca. 3 μm synthetic type 1b diamond particles. Annealing in the temperature range of ca. 1400 °C–1700 °C for even 5 min leads to a higher optically detected magnetic resonance contrast as compared to standard annealing at 900 °C for 2 h. Particles annealed at 1700 °C for 5 min exhibit a contrast close to about 13% as compared to about 9% for those annealed at 900 °C for 2 h. A reduction in the zero-field splitting strain parameter from E ≈ 4.5 MHz to ≈ 2.5 MHz and spectral linewidth from Δν ≈ 7 MHz to ≈ 4 MHz are observed even after 5 min annealing at 1700 °C. Improvements in these spectral parameters resulted in a roughly 2-fold reduction in the noise level of temperature monitoring experiment utilizing an ensemble of NV centers in the particles. Annealing in the temperature range of 1600 °C for 15 or 30 min or 1700 °C for 5 min resulted in NV T 1 relaxation times approaching ca. 5 ms typically observed for bulk diamond. Quantitative electron paramagnetic resonance (EPR) allowed for estimations of thermal activation energies of paramagnetic center annihilation. Monitoring the primary defect concentration (P1 and other defects with half integer spins) and utilizing second order kinetic modeling, an activation energy of 3.63 ± 0.28 eV was estimated. Alternatively, using the NV half field EPR signal and first order kinetic modeling, a similar activation energy 3.89 ± 0.29 eV was estimated.

NV centers↗
NASA NTRS2016

Electrical Performance of a High Temperature 32-I/O HTCC Alumina Package

A high temperature co-fired ceramic (HTCC) alumina material was previously electrically tested at temperatures up to 550 C, and demonstrated improved dielectric performance at high temperatures compared with the 96% alumina substrate that we used before, suggesting its potential use for high temperature packaging applications. This paper introduces a prototype 32-I/O (input/output) HTCC alumina package with platinum conductor for 500 C low-power silicon carbide (SiC) integrated circuits. The design and electrical performance of this package including parasitic capacitance and parallel conductance of neighboring I/Os from 100 Hz to 1 MHz in a temperature range from room temperature to 550 C are discussed in detail. The parasitic capacitance and parallel conductance of this package in the entire frequency and temperature ranges measured does not exceed 1.5 pF and 0.05 microsiemens, respectively. SiC integrated circuits using this package and compatible printed circuit board have been successfully tested at 500 C for over 3736 hours continuously, and at 700 C for over 140 hours. Some test examples of SiC integrated circuits with this packaging system are presented. This package is the key to prolonged T greater than or equal to 500 C operational testing of the new generation of SiC high temperature integrated circuits and other devices currently under development at NASA Glenn Research Center.

dielectric performance↗
NASA NTRS2012

Silicon Carbide Nanotube Oxidation at High Temperatures

Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.

Ahlborg, Nadia↗
NASA NTRS2014

High Temperature Chemistry at NASA: Hot Topics

High Temperature issues in aircraft engines Hot section: Ni and Co based Superalloys Oxidation and Corrosion (Durability) at high temperatures. Thermal protection system (TPS) and RCC (Reinforced Carbon-Carbon) on the Space Shuttle Orbiter. High temperatures in other worlds: Planets close to their stars.

re-entry heat shields↗
NASA NTRS1985

Nonlinear Constitutive Relations for High Temperature Application, 1984

Nonlinear constitutive relations for high temperature applications were discussed. The state of the art in nonlinear constitutive modeling of high temperature materials was reviewed and the need for future research and development efforts in this area was identified. Considerable research efforts are urgently needed in the development of nonlinear constitutive relations for high temperature applications prompted by recent advances in high temperature materials technology and new demands on material and component performance. Topics discussed include: constitutive modeling, numerical methods, material testing, and structural applications.

Source record↗
NASA NTRS1982

High temperature deformation of NiAl and CoAl

The high temperature mechanical properties of the aluminides are reviewed with respect to their potential as high temperature structural materials. It is shown that NiAl and CoAl are substantially stronger than the pure metals Ni and Co at high temperatures and approach the strength of some superalloys, particularly when those superalloys are tested in "weak" directions. The factors that limit and control the high temperature strengths of NiAl and CoAl are examined to provide a basis for the development of intermetallic alloys of this type.

Nix, W. D.↗
NASA NTRS1998

High temperature thrust chamber for spacecraft

A high temperature thrust chamber for spacecraft (20) is provided herein. The high temperature thrust chamber comprises a hollow body member (12) having an outer surface and an internal surface (16) defining the high temperature chamber (10). The body member (12) is made substantially of rhenium. An alloy (18) consisting of iridium and at least alloying metal selected of the group consisting of rhodium, platinum and palladium is deposited on at least a portion of the internal surface (16) of the body member (12). The iridium and the alloying metal are electrodeposited onto the body member (12). A HIP cycle is performed upon the body member (12) to cause the coating of iridium and the alloying metal to form the alloy (18) which protects the body member (12) from oxidation.

Chazen, Melvin L.↗
NASA NTRSDate not supplied

Electrical and Dielectric Characterizations of HTCC Electronic Packages for High Temperature Harsh Environment Applications

A prototype high temperature co-fired ceramic (HTCC) alumina packaging system composed of a 32-I/Os package and a compatible circuit board was previously developed and demonstrated for long term operation in 500 °C environments. The electrical / dielectric parasitic parameters of that chip level package were characterized and reported. This co-fired packaging system with platinum (Pt) conductor has successfully facilitated tests of silicon carbide (SiC) analog and digital integrated circuits (ICs) developed at NASA GRC at 500°C for up to 10,000 hours in ambient oven environment and 60 earth days in Venus surface environment with simulated temperature, pressure, and chemical constituents. Based on these previous results, this paper introduces new designs of Pt-HTCC packages with 16, 24, and 44 I/Os for packaging a new generation SiC ICs with 8, 24, 56, 62, and 72 I/Os to be tested in high temperature harsh environments. The package with 44 I/Os is specifically designed for the new SiC ICs with 56, 62, and 72-I/Os and electrical connection needs, the power pads of this package are consolidated, and an array of I/O pads distributed on separated vertical levels (inside the package) is used to control the overall package dimensions and mitigate the parasitic effects at high temperatures. This paper will present the detailed design of these chip-level packages and results of electrical and dielectric characterization of these newly fabricated chip-level Pt-HTCC packages.

High temperature↗
NASA NTRSDate not supplied

Electrical and Dielectric Characterizations of HTCC Electronic Packages for High Temperature Harsh Environment Applications

A prototype high temperature co-fired ceramic (HTCC) alumina packaging system composed of a 32-I/Os package and a compatible circuit board was previously developed and demonstrated for long term operation in 500 °C environments. The electrical / dielectric parasitic parameters of that chip level package were characterized and reported. This co-fired packaging system with platinum (Pt) conductor has successfully facilitated tests of silicon carbide (SiC) analog and digital integrated circuits (ICs) developed at NASA GRC at 500°C for up to 10,000 hours in ambient oven environment and 60 earth days in Venus surface environment with simulated temperature, pressure, and chemical constituents. Based on these previous results, this paper introduces new designs of Pt-HTCC packages with 16, 24, and 44 I/Os for packaging a new generation SiC ICs with 8, 24, 56, 62, and 72 I/Os to be tested in high temperature harsh environments. The package with 44 I/Os is specifically designed for the new SiC ICs with 56, 62, and 72-I/Os and electrical connection needs, the power pads of this package are consolidated, and an array of I/O pads distributed on separated vertical levels (inside the package) is used to control the overall package dimensions and mitigate the parasitic effects at high temperatures. This paper will present the detailed design of these chip-level packages and results of electrical and dielectric characterization of these newly fabricated chip-level Pt-HTCC packages.

High temperature↗