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At least 163 records · Page 9

Printed Antennas Made Reconfigurable by Use of MEMS Switches

A class of reconfigurable microwave antennas now undergoing development comprise fairly conventional printed-circuit feed elements and radiating patches integrated with novel switches containing actuators of the microelectromechanical systems (MEMS) type. In comparison with solid-state electronic control devices incorporated into some prior printed microwave antennas, the MEMS-based switches in these antennas impose lower insertion losses and consume less power. Because the radio-frequency responses of the MEMS switches are more nearly linear, they introduce less signal distortion. In addition, construction and operation are simplified because only a single DC bias line is needed to control each MEMS actuator.

Simons, Rainee N.↗

Magneto-optic garnet and liquid crystal optical switches

Magnetic stripe domain and liquid crystal devices are being developed and evaluated as fiber optic switches that can be utilized for nonblocking type nxm optical matrix switches in networking and optical processing. Liquid crystal switches are characterized by very low insertion loss and crosstalk, while stripe domain switches commutate in less than one microsecond. Both switches operate on multimode, randomly polarized fiber light with potentially large values for (n,m). The applications of these magnetic stripe domain and liquid crystal devices are discussed.

Krawczak, J. A.↗

Turbine-Driven Pipe-Cleaning Brush

Simple pipe-cleaning device includes small turbine wheel axially connected, by standoff, to circular brush. Turbine wheel turns on hub bearing attached to end of upstream cable. Turbine-and-brush assembly inserted in pipe with cable trailing upstream and brush facing downstream. Water or cleaning solution pumped through pipe. Cable held at upstream end, so it holds turbine and brush in pipe at location to be cleaned. Flow in pipe turns turbine, which turns wheel, producing desired cleaning action. In addition to brushing action, device provides even mixing of cleaning solution in pipe.

Werlink, Rudy J.↗

Continuous magnetic flux pump

A method and means for altering the intensity of a magnetic field by transposing flux from one location to the location desired fro the magnetic field are examined. The device described includes a pair of communicating cavities formed in a block of superconducting material, is dimensioned to be insertable into one of the cavities and to substantially fill the cavity. Magnetic flux is first trapped in the cavities by establishing a magnetic field while the superconducting material is above the critical temperature at which it goes superconducting. Thereafter, the temperature of the material is reduced below the critical value, and then the exciting magnetic field may be removed. By varying the ratios of the areas of the two cavities, it is possible to produce a field having much greater flux density in the second, smaller cavity, into which the flux transposed.

Hildebrandt, A. F.↗

Long distance quantum communication using quantum error correction

We describe a quantum error correction scheme that can increase the effective absorption length of the communication channel. This device can play the role of a quantum transponder when placed in series, or a cyclic quantum memory when inserted in an optical loop.

quantum memory quantum repeater↗

An electrical connector pin protector

Spring loaded insert protects electrical connector pins from being bent due to improper mating, or probing the pins with a screwdriver. This device modifies existing electrical connectors using only springs and retaining pins.

Mc Quillen, R. B.↗

Inflatable device for installing strain gage bridges

Methods and devices for installing in a tubular shaft multiple strain gages are disclosed with focus on a method and a device for pneumatically forcing strain gages into seated engagement with the internal surfaces of a tubular shaft in an installation of multiple strain gages in a tubular shaft. The strain gages or other electron devices are seated in a template-like component which is wrapped about a pneumatically expansible body. The component is inserted into a shaft and the body is pneumatically expanded after a suitable adhesive was applied to the surfaces.

Cook, C. E.↗

Shape-Memory Probe Grasps Small Objects

Shape-memory device removes foreign objects from ear canal, nose, or throat with little risk of damage to tissue. Thin, flexible wire inserted into cavity. Once positioned, it is made to bend into hook, tweezer, or other "remembered" grasping configuration by heating above critical temperature.

Angulo, Earl D.↗

Optically addressed asymmetric Fabry-Perot modulator

A low power, high contrast optically addressed modulator, operating with normal incidence, has been fabricated. Optically controlled reflection modulation is achieved through optically induced absorption modulation in a periodically delta-doped InGaAs/GaAs multiple quantum well structure inserted in an integrated asymmetric Fabry-Perot resonator. A contrast ratio over 60:1 was measured using a spectrally matched low power InGaAs/GaAs quantum well laser to generate the write (control) signal. The insertion loss for the normally off modulator is 4.6 dB at the highest write signal power (30 mW) used. The device lends itself to the fabrication of arrays for optically addressed spatial light modulation.

Larsson, A.↗

Silicon micromachined waveguides for millimeter-wave and submillimeter-wave frequencies

Rectangular waveguide is commonly used up to high millimeter-wave frequencies. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. The development of silicon micro-machining techniques to create silicon-based waveguide circuits, which can operate up to high submillimeter-wave frequencies, is reported. As a first step, WR-10 waveguide has been fabricated from (110) silicon wafers. Insertion loss measurements of gold plated silicon waveguide show performance comparable to standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems.

Mcgrath, William R.↗

RF MEMS Switches with SiC Microbridges for Improved Reliability

Radio frequency (RF) microelectromechanical (MEMS) switches offer superior performance when compared to the traditional semiconductor devices such as PIN diodes or GaAs transistors. MEMS switches have a return loss (RL) better than -25 dB, negligible insertion loss (IL), isolation better than -30 dB, and near zero power consumption. However, RF MEMS switches have several drawbacks the most serious being long-term reliability. The ability for the switch to operate for millions or even billions of cycles is a major concern and must be addressed. MEMS switches are basically grouped in two categories, capacitive and metal-to-metal contact. The capacitive type switch consists of a movable metal bridge spanning a fixed electrode and separated by a narrow air gap and thin insulating material. The metal-to-metal contact type utilizes the same basic design but without the insulating material. After prolonged operation the metal bridges, in most of these switches, begin to sag and eventually fail to actuate. For the metal-to-metal type, the two metal layers may actually fuse together. Also if the switches are not packaged properly or protected from the environment moisture may build up and cause stiction between the top and bottom electrodes rendering them useless. Many MEMS switch designs have been developed and most illustrate fairly good RF characteristics. Nevertheless very few have demonstrated both great RF performance and ability to perform millions/billions of switching cycles. Of these, nearly all are of metal-to-metal type so as the frequency increases RF performance decreases.

Scardelletti, Maximilian C.↗

Recent Radiation Test Results for Trench Power MOSFETs

Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions.

Schottky Diodes↗

Nickel-Graphite Composite Compliant Interface and/or Hot Shoe Material

Next-generation high-temperature thermoelectric-power-generating devices will employ segmented architectures and will have to reliably withstand thermally induced mechanical stresses produced during component fabrication, device assembly, and operation. Thermoelectric materials have typically poor mechanical strength, exhibit brittle behavior, and possess a wide range of coefficient of thermal expansion (CTE) values. As a result, the direct bonding at elevated temperatures of these materials to each other to produce segmented leg components is difficult, and often results in localized microcracking at interfaces and mec hanical failure due to the stresses that arise from the CTE mismatch between the various materials. Even in the absence of full mechanical failure, degraded interfaces can lead to increased electrical and thermal resistances, which adversely impact conversion efficiency and power output. The proposed solution is the insertion of a mechanically compliant layer, with high electrical and thermal conductivity, between the low- and high-temperature segments to relieve thermomechanical stresses during device fabrication and operation. This composite material can be used as a stress-relieving layer between the thermoelectric segments and/or between a thermoelectric segment and a hot- or cold-side interconnect material. The material also can be used as a compliant hot shoe. Nickel-coated graphite powders were hot-pressed to form a nickel-graphite composite material. A freestanding thermoelectric segmented leg was fabricated by brazing the compliant pad layer between the high-temperature p- Zintl and low-temperature p-SKD TE segments using Cu-Ag braze foils. The segmented leg stack was heated in vacuum under a compressive load to achieve bonding. The novelty of the innovation is the use of composite material that re duces the thermomechanical stresses en - countered in the construction of high-efficiency, high-temperature therm - o-electric devices. The compliant pad enables the bonding of dissimilar thermoelectric materials while maintaining the desired electrical and thermal properties essential for efficient device operation. The modulus, CTE, electrical, and thermal conductances of the composite can be controlled by varying the ratio of nickel to graphite.

Firdosy, Samad A.↗

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

Qiu, Yueming↗

Subcooled freon-11 flow boiling in top-heated finned coolant channels with and without a twisted tape

An experimental study was conducted in top-heated finned horizontal tubes to study the effect of enhancement devices on flow boiling heat transfer in coolant channels. The objectives are to examine the variations in both the mean and local (axial and circumferential) heat transfer coefficients for circular coolant channels with spiral finned walls and/or spiral fins with a twisted tape, and improve the data reduction technique of a previous investigator. The working fluid is freon-11 with an inlet temperature of 22.2 C (approximately 21 C subcooling). The coolant channel's exit pressure and mass velocity are 0.19 M Pa (absolute) and 0.21 Mg/sq. ms, respectively. Two tube configurations were examined; i.e., tubes had either 6.52 (small pitch) or 4.0 (large pitch) fins/cm of the circumferential length (26 and 16 fins, respectively). The large pitch fins were also examined with a twisted tape insert. The inside nominal diameter of the copper channels at the root of the fins was 1.0 cm. The results show that by adding enhancement devices, boiling occurs almost simultaneously at all axial locations. The case of spiral fins with large pitch resulted in larger mean (circumferentially averaged) heat transfer coefficients, h sub m, at all axial locations. Finally, when twisted tape is added to the tube with large-pitched fins, the power required for the onset of boiling is reduced at all axial and circumferential locations.

Smith, Alvin↗

Catheter-tip force transducer for cardiovascular research

Sensor can be installed in left ventricle by means of procedures available for inserting catheter into an artery at body's extremities and manipulating it through vessel and past aortic valve. Metallic tines of device can be used as internal electrode for electrocardiogram.

Feldstein, C.↗

Method for fabricating a mass spectrometer inlet leak

A method of fabricating an inlet leak for measuring chemically reactive gases is proposed. The method involves the steps of preparing a selected internal surface of a high melting point metal tubing for sealing to a glass tubing. A portion of the glass tubing is inserted into the prepared portion of the metal tubing, the glass tubing having an outer diameter substantially the same as the inner diameter of the metal tubing. The inserted glass tubing is sealed to the internal surface of the metal tubing; the glass tubing is drawn under a magnifying device to reduce the entire interior diameter thereof to substantially two microns; and an end portion of the drawing glass tubing is broken away.

Harris, R. F.↗

Investigation of advanced fault insertion and simulator methods

The cooperative agreement partly supported research leading to the open-literature publication cited. Additional efforts under the agreement included research into fault modeling of semiconductor devices. Results of this research are presented in this report which is summarized in the following paragraphs. As a result of the cited research, it appears that semiconductor failure mechanism data is abundant but of little use in developing pin-level device models. Failure mode data on the other hand does exist but is too sparse to be of any statistical use in developing fault models. What is significant in the failure mode data is that, unlike classical logic, MSI and LSI devices do exhibit more than 'stuck-at' and open/short failure modes. Specifically they are dominated by parametric failures and functional anomalies that can include intermittent faults and multiple-pin failures. The report discusses methods of developing composite pin-level models based on extrapolation of semiconductor device failure mechanisms, failure modes, results of temperature stress testing and functional modeling. Limitations of this model particularly with regard to determination of fault detection coverage and latency time measurement are discussed. Indicated research directions are presented.

Dunn, W. R.↗