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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Magnetic Properties and Electronic Structure of Ni/C Multilayer Films

The magnetic properties of Ni/C multilayers were investigated using vibrating sample magnetometer and ferromagnetic resonance (FMR). Spin wave resonances were seen in FMR and the spin wave was found to be sustained through whole layers. The interlayer coupling constant was small pointing out a weak exchange coupling between Ni films through C spacers. The FMR linewidth, in parallel geometry, of the uniform mode decreases with the increase in Ni thickness from 30 to 300 Å which can be understood by considering interfacial effects. The magnetization decreases with decreasing Ni thickness due to the structural imperfections associated with the presence of Ni{sub 1−x}C{sub x} alloys at the interface. Density functional theory (DFT) has been performed to shed light on the decrease in magnetic moment at the interfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

The Blocking Temperature of an Amorphous Alternate A and B Layers Cylindrical Nanowire

The blocking temperature of an amorphous cylindrical nanowire of length L and radius R is studied within the framework of Monte Carlo simulation based on Metropolis algorithm. The nanowire is formed by alternate layers of atoms A and B. The interlayer coupling J{sub AB} is ferromagnetic. The effects of the exchange couplings J{sub B} and J{sub AB}, the plane anisotropy D{sub xy}, and the amorphization α on the blocking temperature of the system are investigated. We found that the blocking temperature increases with increasing the value of the exchange couplings J{sub B} and J{sub AB} and decreases with increasing the plane anisotropy D{sub xy} and the degree of the amorphization α.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

The Influence of Zn on Superconducting Properties of Bi{sub 2}Sr{sub 2}Ca{sub 1}Cu{sub 2}O{sub X}

It was investigated that the influence of Ca substitution by Zn on the specific resistivity, thermal power, and excess conductivity of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub X}, Bi{sub 2}Sr{sub 2}Ca{sub 0.8}Zn{sub 0.2}Cu{sub 2}O{sub X}, and Bi{sub 2}Sr{sub 2}Ca{sub 0.4}Zn{sub 0.6}Cu{sub 2}O{sub X} polycrystalline samples in the 70–300 K temperature interval. The fluctuation-induced conductivity is analyzed using the Aslamasov and Larkin and Lawrence and Doniach models. The microscopic parameters such as dimensional crossover temperature (T{sub cr}), interlayer coupling strength (J), and zero temperature coherence length along c axis (ξ{sub 0}) are estimated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Helical dislocation in twisted bilayer graphene

Here, we observe helical dislocation network in twisted bilayer graphene (tBLG), which is accompanied by large out-of-plane deformation. By atomistic calculations, we demonstrate two distinct out-of-plane deformation modes, breathing mode with small out-of-plane deformation and bending mode with one order larger corrugation magnitude compared to the breathing mode. The out-of-plane deformation is caused by inhomogeneous interlayer coupling resulting from the periodic stacking order of the tBLG moiré superlattice. Instead of commonly observed screw dislocation in tBLG, we demonstrate a slip-induced helical dislocation network in the bending mode tBLG. We show that bending mode deformation is more stable at low twist angles, as the energy savings due to interface energy exceeds the energy penalty due to the strain energy caused by the large out-of-plane deformation. Our work provides a detailed picture of a new helical dislocation structure in tBLG and establishes a direct connection between the dislocation and deformation. Therefore, understanding the dislocation mechanics of tBLG may open up the possibility to control the corrugation, and reveal an opportunity to tune the intriguing physical properties of twisted bilayer graphene.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Exchange bias and interface-related effects in two-dimensional van der Waals magnetic heterostructures: Open questions and perspectives

The exchange bias (EB) effect is known as a fundamentally and technologically important magnetic property of a magnetic bilayer film. It is manifested as a horizontal shift in a magnetic hysteresis loop of a film subject to cooling in the presence of a magnetic field. The EB effect in van der Waals (vdW) heterostructures offers a novel approach for tuning the magnetic properties of the newly discovered single-layer magnets, as well as adds a new impetus to magnetic vdW heterostructures. Indeed, intriguing EB effects have recently been reported in a variety of low-dimensional vdW magnetic systems ranging from a weakly interlayer-coupled vdW magnet (e.g., Fe 3 GeTe 2 ) to a bilayer composed of two different magnetic vdW materials (e.g., Fe 3 GeTe 2 /CrCl 3 , Fe 3 GeTe 2 /FePS 3 , Fe 3 GeTe 2 /MnPS 3 , Fe 3 GeTe 2 /CrSe, Fe 3 GeTe 2 /CrOCl, Fe 3 GeTe 2 /CoPc, Fe 5 GeTe 2 /FePS 3 ), to bilayers of two different vdW defective magnets (e.g., VSe 2 /MoS 2 ), or to metallic ferromagnet/vdW defective magnet interfaces (e.g., Fe/MoS 2 ). Despite their huge potential in spintronic device applications, the physical origins of the observed EB effects have remained elusive to researchers. Here, we present here a critical review of the EB effect and associated phenomena such as magnetic proximity (MP) in various vdW heterostructure systems and propose approaches to addressing some of the emerging fundamental questions.

2D magnets↗
DOE OSTI2015

Bandgap engineering in van der Waals heterostructures of blue phosphorene and MoS{sub 2}: A first principles calculation

Blue phosphorene (BP) was theoretically predicted to be thermally stable recently. Considering its similar in-layer hexagonal lattice to MoS{sub 2}, MoS{sub 2} could be an appropriate substrate to grow BP in experiments. In this work, the van der Waals (vdW) heterostructures are constructed by stacking BP on top of MoS{sub 2}. The thermal stability and electronic structures are evaluated based on first principles calculations with vdW-corrected exchange-correlation functional. The formation of the heterostructures is demonstrated to be exothermic and the most stable stacking configuration is confirmed. The heterostructures BP/MoS{sub 2} preserve both the properties of BP and MoS{sub 2} but exhibit relatively narrower bandgaps due to the interlayer coupling effect. The band structures can be further engineered by applying external electric fields. An indirect–direct bandgap transition in bilayer BP/MoS{sub 2} is demonstrated to be controlled by the symmetry property of the built-in electric dipole fields. - Graphical abstract: An indirect-direct band gap transition occurs in van der Waals heterostructure of MoS{sub 2}/BP under external electric fields which is demonstrated to be controlled by the symmetry of the built-in electric dipole fields. - Highlights: • The stacking of heterostructures of BP/MoS{sub 2} is demonstrated to be exothermic. • This suggests that it is possible to grow BP using MoS{sub 2} as the substrate. • The band structures of the heterostructures are exploited. • It realizes an indirect–direct gap transition under external electric fields. • The symmetry of the built-in electric dipole fields controls such gap transition.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Selective Transfer of Rotationally Commensurate MoS 2 from an Epitaxially Grown van der Waals Heterostructure

We report that large-scale synthesis of high-quality two-dimensional (2D) semiconductors is critical for their incorporation in emerging electronic and optoelectronic technologies. In particular, chemical vapor deposition (CVD) of transition-metal dichalcogenides (TMDs) via van der Waals epitaxy on epitaxial graphene (EG) leads to rotationally commensurate TMDs in contrast to randomly aligned TMDs grown on amorphous oxide substrates. However, the interlayer coupling between TMDs and EG hinders the investigation and utilization of the intrinsic electronic properties of the resulting TMDs, thus requiring their isolation from the EG growth substrate. To address this issue, we report here a technique for selectively transferring monolayer molybdenum disulfide (MoS 2 ) from CVD-grown MoS 2 -EG van der Waals heterojunctions using copper (Cu) adhesion layers. The choice of Cu as the adhesion layer is motivated by density functional theory calculations that predict the preferential binding of monolayer MoS 2 to Cu in contrast to graphene. Atomic force microscopy and optical spectroscopy confirm the large-scale transfer of rotationally commensurate MoS 2 onto SiO 2 /Si substrates without cracks, wrinkles, or residues. Furthermore, the transferred MoS 2 shows high performance in field-effect transistors with mobilities of up to 30 cm 2 /V s and on/off ratios of up to 10 6 at room temperature. Lastly, this transfer technique can likely be generalized to other TMDs and related 2D materials grown on EG, thus offering a broad range of benefits in nanoelectronic, optoelectronic, and photonic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Pressure-Dependent Magnetic Properties of Quasi-2D Cr 2 Si 2 Te 6 and Mn 3 Si 2 Te 6

Recently, pressure has been used to induce structural and magnetic phase transitions in many layered quantum materials whose layers are linked by van der Waals forces. Materials with such weakly held layers allow for relatively easy manipulation of the superexchange mechanism, which can give rise to novel magnetic behavior. Here, using hydrostatic pressure as a disorderless means to manipulate the interlayer coupling, we applied pressure on two quasi-2D sister compounds, namely, Cr 2 Si 2 Te 6 (CST) and Mn 3 Si 2 Te 6 (MST), up to ~1 GPa. Magnetic property measurements with the application of pressure revealed that the ferromagnetic transition temperature decreases in CST, while the opposite occurs for the ferrimagnetic MST. In MST, magnetization decreases with the increase in pressure, and such a trend is not clearly observed within the pressure range studied for CST. The overall pressure effect on magnetic characteristics such as exchange couplings and magnetic anisotropy energies is also examined theoretically using density functional theory. Exchange coupling in MST is strongly frustrated, and the first nearest neighbor interaction is the most dominant of the components with the strongest pressure dependence. In CST, the exchange coupling parameters exhibit very little dependence on pressure. This combined experimental and theoretical work has the potential to expand to other relevant quantum materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Stacking Faults and Topological Properties in MnBi 2 Te 4 : Reconciling Gapped and Gapless States

Despite theoretical predictions of a gapped surface state for the magnetic topological insulator MnBi 2 Te 4 (MBT), there has been a series of experimental evidence pointing toward gapless states. Here, we theoretically explore how stacking faults could influence the topological characteristics of MBT. We envisage a scenario that a stacking fault exists at the surface of MBT, causing the uppermost layer to deviate from the ground state and its interlayer separation to be expanded. This stacking fault with modulated interlayer couplings hosts a nearly gapless state within the topmost layer due to charge redistribution as the outermost layer recedes. Furthermore, we find evidence of spin-momentum locking and preservation of weak band inversion in the gapless surface state, suggesting the nontrivial topological surface states in the presence of the stacking fault. In conclusion, our findings provide a plausible elucidation to the long-standing conundrum of reconciling the observation of gapped and gapless states on MBT surfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Anomalous Second Harmonic Generation from Atomically Thin MnBi 2 Te 4

MnBi 2 Te 4 is a van der Waals topological insulator with intrinsic intralayer ferromagnetic exchange and A-type antiferromagnetic (AFM) interlayer coupling. Theoretically, it belongs to a class of structurally centrosymmetric crystals whose layered antiferromagnetic order breaks inversion symmetry for even layer numbers, making optical second harmonic generation (SHG) an ideal probe of the coupling between the crystal and magnetic structures. Here, we perform magnetic field and temperature dependent SHG measurements on MnBi 2 Te 4 flakes ranging from bulk to monolayer thickness. We find that the dominant SHG signal from MnBi 2 Te 4 is unexpectedly unrelated to both magnetic state and layer number. As a result, we suggest that surface SHG is the likely source of the observed strong SHG, whose symmetry matches that of the MnBi 2 Te 4 -vacuum interface. Our results highlight the importance of considering the surface contribution to inversion symmetry breaking in van der Waals centrosymmetric magnets.

2D magnets↗
DOE OSTI2023

Layer-Dependent Magnetism and Spin Fluctuations in Atomically Thin van der Waals Magnet CrPS 4

van der Waals (vdW) magnets, an emerging family of two-dimensional (2D) materials, have received tremendous attention due to their rich fundamental physics and significant potential for cutting-edge technological applications. In contrast to the conventional bulk counterparts, vdW magnets exhibit significant tunability of local material properties, such as stacking engineered interlayer coupling and layer-number dependent magnetic and electronic interactions, which promise to deliver previously unavailable merits to develop multifunctional microelectronic devices. As a further ingredient of this emerging topic, here we report nanoscale quantum sensing and imaging of atomically thin vdW magnet chromium thiophosphate CrPS 4 , revealing its characteristic layer-dependent 2D static magnetism and dynamic spin fluctuations. We also show a large tunneling magnetoresistance in CrPS 4 -based spin filter vdW heterostructures. Here, the excellent material stability, robust strategy against environmental degradation, in combination with tailored magnetic properties highlight the potential of CrPS 4 in developing state-of-the-art 2D spintronic devices for next-generation information technologies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus

As a new two-dimensional layered material, black phosphorus (BP) is a very promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principles theory to characterize and understand low-frequency (LF) interlayer breathing modes (<100 cm-1) in few-layer BP for the first time. Using laser polarization dependence study and group theory analysis the breathing modes are assigned to Ag symmetry. Compared to the high-frequency (HF) Raman modes, the LF breathing modes are considerably more sensitive to interlayer coupling and thus their frequencies show stronger dependence on the number of layers. Hence, they constitute an effective means to probe both the crystalline orientation and thickness of few-layer BP. Furthermore, the temperature dependence shows that the breathing modes have a harmonic behavior, in contrast to HF Raman modes which exhibit anharmonicity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Visualization of Local Conductance in MoS 2 /WSe 2 Heterostructure Transistors

The vertical stacking of van der Waals (vdW) materials presents a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS 2 )/tungsten diselenide (WSe 2 ) heterostructure devices, which exhibit an intriguing antiambipolar effect in their transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS 2 and holes in the p-type WSe 2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS 2 -heterostructure-WSe 2 . Our work vividly illustrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research.

42 ENGINEERING↗
DOE OSTI2019

Atomically Thin CrCl 3 : An In-Plane Layered Antiferromagnetic Insulator

The recent discovery of magnetism in atomically thin layers of van der Waals (vdW) crystals has created new opportunities for exploring magnetic phenomena in the two-dimensional (2D) limit. In most 2D magnets studied to date, the c-axis is an easy axis, so that at zero applied field the polarization of each layer is perpendicular to the plane. In this work, we demonstrate that atomically thin CrCl 3 is a layered antiferromagnetic insulator with an easy-plane normal to the c-axis, that is, the polarization is in the plane of each layer and has no preferred direction within it. Ligand-field photoluminescence at 870 nm is observed down to the monolayer limit, demonstrating its insulating properties. We investigate the in-plane magnetic order using tunneling magnetoresistance in graphene/CrCl 3 /graphene tunnel junctions, establishing that the interlayer coupling is antiferromagnetic down to the bilayer. From the temperature dependence of the magnetoresistance, we obtain an effective magnetic phase diagram for the bilayer. Our findings suggest that CrCl 3 should be useful for studying the physics of 2D phase transitions and for making new kinds of vdW spintronic devices.

2D magnetic insulator↗
DOE OSTI2019

Tailored Plasmons in Pentacene/Graphene Heterostructures with Interlayer Electron Transfer

van der Waals (vdW) heterostructures, which are produced by the precise assemblies of varieties of two-dimensional (2D) materials, have demonstrated many novel properties and functionalities. Here we report a nanoplasmonic study of vdW heterostructures that were produced by depositing ordered molecular layers of pentacene on top of graphene. We find through nanoinfrared (IR) imaging that surface plasmons formed due to the collective oscillations of Dirac Fermions in graphene are highly sensitive to the adjacent pentacene layers. In particular, the plasmon wavelength declines systematically but nonlinearly with increasing pentacene thickness. Further analysis and density functional theory (DFT) calculations indicate that the observed peculiar thickness dependence is mainly due to the tunneling-type electron transfer from pentacene to graphene. Here, our work unveils a new method for tailoring graphene plasmons and deepens our understanding of the intriguing nano-optical phenomena due to interlayer couplings in novel vdW heterostructures.

42 ENGINEERING↗
DOE OSTI2019

Coexistence of Magnetic Orders in Two-Dimensional Magnet CrI3

The magnetic properties in two-dimensional van der Waals materials depend sensitively on structure. CrI 3 , as an example, has been recently demonstrated to exhibit distinct magnetic properties depending on the layer thickness and stacking order. Bulk CrI 3 is ferromagnetic (FM) with a Curie temperature of 61 K and a rhombohedral layer stacking, whereas few-layer CrI 3 has a layered antiferromagnetic (AFM) phase with a lower ordering temperature of 45 K and a monoclinic stacking. In this work, we use cryogenic magnetic force microscopy to investigate CrI 3 flakes in the intermediate thickness range (25–200 nm) and find that the two types of magnetic orders, hence the stacking orders, can coexist in the same flake with a layer of ~13 nm at each surface being in the layered AFM phase similar to few-layer CrI 3 and the rest in the bulk FM phase. The switching of the bulk moment proceeds through a remnant state with nearly compensated magnetic moment along the c-axis, indicating formation of c-axis domains allowed by a weak interlayer coupling strength in the rhombohedral phase. Our research provides a comprehensive picture on the magnetism in CrI 3 and point to the possibility of engineering magnetic heterostructures within the same material.

2D magnets↗
DOE OSTI2019

A Natural 2D Heterostructure [Pb 3.1 Sb 0.9 S 4 ][Au x Te 2– x ] with Large Transverse Nonsaturating Negative Magnetoresistance and High Electron Mobility

We report the two-dimensional (2D) natural hetero-structure [Pb 3.1 Sb 0.9 S 4 ][Au$_x$Te$_{2-x}$] ($x$ = 0.52-0.36) which shows anomalous, transverse nonsaturating negative magnetoresistance (MR). For $x$ = 0.52, the material has a commensurately modulated structure with alternating [Pb3.1Sb0.9S4] rocksalt layers and atomically thin [Au$_x$Te$_{2-x}$] sheets, as determined by single-crystal X-ray diffraction using a (3 + 1)-dimensional space group; for other $x$ compositions, the modulated structure is absent and the Au and Te atoms are disordered. The transport properties in this system at low temperature (<100 K) are dominated by an unusual 2D hopping mechanism, while at room temperature a high carrier mobility of similar to ~1352 cm 2 V -1 s -1 obtained ($x$ = 0.36). The confined electrons within the [Au$_x$Te$_{2-x}$] layers are also exposed to interlayer coupling with the insulating [Pb 3.1 Sb 0.9 S 4 ] layers, and as a result, the properties of the heterostructures emerge not only from the constituent layers but also the interactions between them. Furthermore, the various Au and Te coordination patterns found in the [Au$_x$Te$_{2-x}$] sheets as a function of $x$ further contribute to a unique electronic structure that leads to the anomalous nonsaturating negative MR with different field dependent behaviors. First-principles calculations indicate that the [Au$_x$Te$_{2-x}$] sheets are responsible for the unusual electrical transport properties in this 2D system.

2D materials↗
DOE OSTI2015

Determination of band alignment in the single-layer MoS 2 /WSe 2 heterojunction

The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS 2 and WSe 2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe 2 and MoS 2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

36 MATERIALS SCIENCE↗