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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Performance of High-Efficiency Advanced Triple-Junction Solar Panels for the LILT Mission Dawn

NASA's Discovery Mission Dawn is designed to (LILT) conditions. operate within the solar system's Asteroid belt, where the large distance from the sun creates a low-intensity, low-temperature (LILT) condition. To meet the mission power requirements under LlLT conditions, very high-efficiency multi-junction solar cells were selected to power the spacecraft to be built by Orbital Sciences Corporation (OSC) under contract with JPL. Emcore's InGaP/InGaAs/Ge advanced triple-junction (ATJ) solar cells, exhibiting an average air mass zero (AMO) efficiency of greater than 27.6% (one-sun, 28 C), were used to populate the solar panels [1]. The two solar array wings, to be built by Dutch Space, with 5 large- area panels each (total area of 36.4 sq. meters) are projected to produce between 10.3 kWe and 1.3 kWe of end-of life (EOL) power in the 1.0 to 3.0 AU range, respectively. The details of the solar panel design, testing and power analysis are presented.

triple junction solar cells↗
DOE OSTI2024

Organic Nano-Junctions: Linking Nanomorphology and Charge Transport in Organic Semiconductor Nanoparticles for Organic Photovoltaic Devices

In this study, innovative nanoscale devices are developed to investigate the charge transport in organic semiconductor nanoparticles. Using different steps of lithography techniques and dielectrophoresis, planar organic nano-junctions are fabricated from which hole mobilities are extracted in a space charge-limited current regime. Subsequently, these devices are used to investigate the impact of the composition and morphology of organic semiconductor nanoparticles on the charge mobilities. Pure donor nanoparticles and composite donor:acceptor nanoparticles with different donor compositions in their shell are inserted in the nanogap electrode to form the nano-junctions. The results highlight that the hole mobilities in the composite nanoparticles decrease by two-fold compared to pure donor nanoparticles. However, no significant change between the two kinds of composite nanoparticle morphologies is observed, indicating that conduction pathways for the holes are as efficient for donor proportion in the shell from 40% to 60%. Organic photovoltaic (OPV) devices are fabricated from water-based colloidal inks containing the two composite nanoparticles (P3HT:eh-IDTBR and P3HT:o-IDTBR) and no significant change in the performances is observed in accordance with the mobility results. Through this study, the performance of OPV devices have been successfully correlated to the transport properties of nanoparticles having different morphology via innovative nanoscale devices.

42 ENGINEERING↗
DOE OSTI2025

Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects

In this study, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero °C. A sharp superconducting transition at T ∼ 1.3 K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility μ ∼ 1.0 × 10 6 cm 2 /Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.

Antimonide heterostructures↗
DOE OSTI2026

Transmon Qubit Using Sn as a Junction Superconductor

Superconductor qubits typically use aluminum–aluminum oxide tunnel junctions to provide the nonlinear inductance. Junctions with semiconductor barriers make it possible to vary the superconductor material and explore beyond aluminum. We use InAs semiconductor nanowires coated with thin superconducting shells of β-Sn to realize transmon qubits. By tuning the Josephson energy with a gate voltage, we adjust the qubit frequency over a range of 3 GHz. The longest energy relaxation time, T 1 = 27 μs, is obtained at the lowest qubit frequencies, while the longest echo dephasing time, T 2 = 1.8 μs, is achieved at higher frequencies. Finally, we assess the possible factors limiting coherence times in these devices and discuss steps to enhance performance through improvements in materials fabrication and circuit design.

B-Sn↗
DOE OSTI2026

A Vibrational Probe of Electrical Doping in N2200 and Fermi-Level Alignment at Polymer Cathode/Metal Cocatalyst/Electrolyte Junctions

Hybrid (photo)­cathodes consisting of conjugated polymer and hydrogen evolution reaction (HER) cocatalysts are an emerging platform for low-cost solar fuel generation. Poly­{[N,N′-bis­(2-octyldodecyl)-naphthalene-1,4,5,8-bis­(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}, known as P­(NDI2OD-T2) or N2200, is a promising electron accepting material for bulk heterojunction photocathodes. Unlike inorganic (photo)­electrodes, much less is known about the energetic alignment of conjugated polymer electrode/metal/electrolyte junctions. Here, in this work, we investigate the electrical doping behavior in an N2200 cathode and its Fermi-level alignment with gold nanoparticles, which is used here as a model for the hydrogen evolution metal cocatalyst. Through UV/visible, Raman, and attenuated total-reflectance infrared spectroelectrochemistry, we observe the impact of electrical doping on the vibrational frequencies of neutral, anion, and dianion species in N2200, which suggests that electron density changes within the corresponding naphthalene-diimide (NDI) units. Upon one-electron reduction, the $C=O$ stretching frequency of the NDI anion unit (polaron) shows a red shift by ∼ 68 cm –1 . Additionally, the $C=O$ stretching frequency of neutral units in the doped N2200 shows a minor red shift of ∼ 5 cm –1 , suggesting charge transfer from neighboring polaron units. Surface-enhanced Raman spectroscopy measurements of a gold nanoparticle-functionalized N2200 electrode revealed that the Au Fermi level only shifts with that of N2200 upon polaron formation; thus, the formal potential of polymer polaron formation determines the behavior of the catalyst Fermi level, which we posit will modulate reaction capability. This mechanistic study provides a new approach for understanding the nanometer-scale energetics at the conjugated polymer/cocatalyst junction and provides critical insights for the future design of HER (photo)­cathodes.

charge transfer↗
DOE OSTI2026

The superconducting diode effect in Josephson junctions fabricated from a structurally chiral superconductor

The superconducting diode effect occurs in superconducting materials in which both time-reversal and inversion symmetry are broken. The recently observed chirality-induced spin selectivity effect demonstrates that chiral materials break both symmetries. Thus, a Josephson junction interface with the left-handed structure on one side of the junction and the right-handed structure on the other should exhibit a diode effect. Here, we report the electrical transport properties of right-handed/left-handed and right-handed/right-handed devices fabricated from single crystals of the structurally chiral superconductor Mo 3 Al 2 C. Fraunhofer-like magnetic diffraction patterns confirm the presence of the Josephson effect in all but one of our devices. A magnetic-field-induced superconducting diode effect is demonstrated in the right-handed/left-handed devices by a statistically significant difference in I c + and ∣ I c −∣, with a maximum asymmetry of 5%. The intrinsic superconducting diode effect is not observed in the right-handed/right-handed devices. We provide an explanation for the presence of the superconducting diode effect in the right-handed/left-handed devices.

superconducting devices↗
DOE OSTI2024

Superconducting diode effect in two-dimensional topological insulator edges and Josephson junctions

The superconducting diode effect—the dependence of critical current on its direction—can arise from the simultaneous breaking of inversion and time-reversal symmetry in a superconductor and has gained interest for its potential applications in superconducting electronics. In this Letter, we study the effect in a two-dimensional topological insulator (2D TI) in both a uniform geometry as well as in a long Josephson junction. We show that in the presence of Zeeman fields, a circulating edge current enables a large non-reciprocity of the critical current. We find a maximum diode efficiency of 1 for the uniform 2D TI and (2−1)2≈0.17 for the long Josephson junction.

Physics↗
DOE OSTI2024

Giant resistance switch in twisted transition metal dichalcogenide tunnel junctions

Resistance switching in multilayer structures are typically based on materials possessing ferroic orders. Here, in this work, we predict an extremely large resistance switching based on the relative spin–orbit splitting in twisted transition metal dichalcogenide (TMD) monolayers tunnel junctions. Because of the valence band spin splitting which depends on the valley index in the Brillouin zone, the perpendicular electronic transport through the junction depends on the relative reciprocal space overlap of the spin-dependent Fermi surfaces of both layers, which can be tuned by twisting one layer. Our quantum transport calculations reveal a switching resistance larger than 10 6 % when the relative alignment of TMDs goes from 0° to 60° and when the angle is kept fixed at 60° and the Fermi level is varied. By creating vacancies, we evaluate how inter-valley scattering affects the efficiency and find that the resistance switching remains large (10 4 %) for typical values of vacancy concentration. Not only should this resistance switching be observed at room temperature due to the large spin splitting, but our results also show how twist angle engineering and control of van der Waals heterostructures could be used for next-generation memory and electronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Theoretical description of atomtronic Josephson junctions in an optical lattice

Experimental realizations of “atomtronic” Josephson junctions have recently been created in annular traps in relative rotation with respect to potential barriers that generate the weak links. If these devices are additionally subjected to an optical lattice potential, then they can incorporate strong-coupling Mott physics within the design, which can modify the behavior and can allow for interesting new configurations of barriers and of superfluid flow patterns. We examine theoretically the behavior of a Bose superfluid in an optical lattice in the presence of an annular trap and a barrier across the annular region which acts as a Josephson junction. As the superfluid is rotated, circulating super-currents appear. Beyond a threshold superfluid velocity, phase slips develop, which generate vortices. We use a finite temperature strong-coupling expansion about the mean-field solution of the Bose Hubbard model to calculate various properties of such devices. Additionally, we discuss some of the rich behavior that can result when there are Mott regions within the system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Designing an exciton-condensate Josephson junction in quantum Hall heterostructures

The exciton condensate, a counterpart of superconductors realized in two-dimensional quantum Hall bilayer systems, has yet to demonstrate definitive experimental evidence of phase coherence such as the Josephson effect. This work introduces a gate-defined Josephson junction designed to exhibit the in-plane Josephson effect in van der Waals heterostructures. Unlike superconducting S-I-S junctions, the proposed device leverages a nearly layer-polarized gated region to mediate Josephson coupling via layer pseudospin variation. This coupling mechanism is tunable through gate voltages and magnetic fields, offering a high degree of experimental control. We demonstrate the feasibility of the design using realistic parameters, paving the way for direct observation of excitonic phase coherence in clean quantum Hall systems.

Wang, Tianle↗
DOE OSTI2025

Observation of edge supercurrent in topological antiferromagnet MnBi 2 Te 4 -based Josephson junctions

Hybridizing superconductivity with topology and magnetism attracts growing interest in condensed matter physics. Here, we present our findings on the measurement of supercurrent induced in an intrinsic antiferromagnetic topological insulator MnBi 2 Te 4 . By constructing a MnBi 2 Te 4 proximity Josephson junction, we observed an anomalously large period of the Fraunhofer patterns, indicating a strong Josephson coupling state. As the MnBi 2 Te 4 thickness is reduced, a distinct asymmetric edge supercurrent emerges, aligning consistently with the observed oscillatory junction magnetoresistance. Leveraging this large asymmetric edge supercurrent, we have realized a nonvolatile Josephson diode device with programmable polarity, achieved through training with an out-of-plane magnetic field. Theoretical calculations substantiate that these behaviors are attributed to the interference between the highly asymmetric topological edge channel–mediated supercurrent induced in MnBi 2 Te 4 . Our study establishes this system as a promising avenue for investigating topological superconductivity, chiral Majorana edge modes, and advanced functionality device applications.

Science & Technology - Other Topics↗
DOE OSTI2025

Controlled Growth of Ta Oxide With Reactive Sputtering for Overlap Josephson Junction Application

Josephson junctions $\($JJs$\)$ are indispensable elements for superconducting quantum electronics. There is a growing need to develop processes for high quality JJs. Here we explore the growth of Ta oxide as a dielectric barrier for Metal-Oxide-Metal overlap JJ implementations. We study films of Ta oxides prepared with reactive magnetron sputtering. TaOx is grown on silicon and Ta films with varying RF power and oxygen concentrations. Tuning these parameters allows us to control the rate of deposition as well as composition of polycrystalline Ta oxides needed to meet our dielectric requirements for Josephson Junctions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Parallel-Processed Multi-junction Perovskite Solar Cells (Final Technical Report)

This report consolidates the findings from this Department of Energy supported project, which aimed to advance the manufacturing of high-efficiency perovskite photovoltaics. To facilitate the processing of tandem devices, and perovskite single-junction and multi-junction devices more generally, the project team developed a lamination process to integrate the subcells and cells, decoupling the processing from the restrictive requirements of serial manufacturing. The lamination approach enables independent and precise tailoring of interface properties for stability and performance.

14 SOLAR ENERGY↗
DOE OSTI2024

Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality

Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.

2D materials↗
NASA NTRS1972

Effects of 22 MeV protons on single junction and silicon controlled rectifiers

The effects of 22-MeV protons on various types of silicon single junction and silicon controlled rectifiers were investigated. The results show that low-leakage devices and silicon controlled rectifiers are the most susceptable to radiation damage. There are also differences noted between single junction rectifiers of the same type made by different manufacturers, which emphasizes the need for better selection of devices used in spacecraft.

Beatty, M. E., III↗
NASA NTRS1972

Three-Josephson-junction interferometer.

An analysis shows that a three-Josephson-junction asymmetric-feed quantum interferometer has increased magnetic field sensitivity and amplitude deviation over those of a two-junction interferometer. The critical current at zero applied field is lower than the critical current at zero flux in the interference loop.

Stuehm, D. L.↗
NASA NTRS1972

Critical current periodicity of Josephson junction interferometers.

Numerical calculation of the critical current through a Josephson junction interferometer, taking into consideration the effect of applied and self-induced magnetic fields on the junctions and in the interference loop. The periodicity of the interference pattern is shown to be less than the flux quantum. Quantitative results are given which illustrate the degree of deviation in periodicity from the flux quantum.

Stuehm, D. L.↗