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Current-induced spin accumulation and magnetoresistance in chiral semimetals
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Two types of colossal magnetoresistance with distinct mechanisms in Eu5In2As6
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Image of Dynamic Local Exchange Interactions in the dc Magnetoresistance of Spin-Polarized Current through a Dopant
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Low Temperature Dynamic Polaron Liquid in a Manganite Exhibiting Colossal Magnetoresistance
Polarons - fermionic charge carriers bearing a strong companion lattice deformation - exhibit a natural tendency for self-localization due to the recursive interaction between electrons and the lattice. While polarons are ubiquitous in insulators, how they evolve in transitions to metallic and superconducting states in quantum materials remains an open question. Here, we use resonant inelastic x-ray scattering to track the electron-lattice coupling in the colossal magneto-resistive bi-layer manganite La 1.2 Sr 1.8 Mn 2 O 7 across its metal-to-insulator transition. The response in the insulating high-temperature state features harmonic emissions of a dispersionless oxygen phonon at small energy transfer. Additionally, upon cooling into the metallic state, we observe a drastic redistribution of spectral weight from the region of these harmonic emissions to a broad high energy continuum. In concert with theoretical calculations, we show that this evolution implies a shift in electron-lattice coupling from static to dynamic lattice distortions that leads to a distinct polaronic ground state in the low temperature metallic phase - a dynamic polaron liquid.
Extended Kohler’s Rule of Magnetoresistance
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Roller Coaster in a Flatland: Magnetoresistivity in Eu-Intercalated Graphite
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Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy
Dimensional confinement and heteroepitaxy enable the engineering of material properties at the atomic scale.
Evaluation of Anisotropic Magnetoresistive (AMR) Sensors for a Magnetic Field Scanning System for SRF Cavities
One of the significant causes of residual losses in superconducting radio-frequency (SRF) cavities is trapped magnetic flux. The flux trapping mechanism depends on many factors that include cool-down conditions, surface preparation techniques, and ambient magnetic field orientation. Suitable diagnostic tools are not yet available to quantitatively correlate such factors’ effect on the flux trapping mechanism. A magnetic field scanning system (MFSS) consisting of AMR sensors, fluxgate magnetometers, or Hall probes is recently commissioned to scan the local magnetic field of trapped vortices around 1.3 GHz single-cell SRF cavities. In this contribution, we will present results from sensitivity calibration and the first tests of AMR sensors in the MFSS.
Near Zero Field Magnetoresistance Investigation of 4H-SiC PiN Junctions Subjected to Energetic Carbon Ion Bombardment
Poster displaying results of Ion Beam Lab testing of non-Sandia test structures.
Extracting the Chiral Contribution to the Negative Longitudinal Magnetoresistance in Epitaxial Pr 2 Ir 2 O 7 Thin Films
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Variation of magnetoresistivity of aucu with degree of order
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Magnetoresistance and field-induced phase transitions in the helical antiferromagnetic state of dysprosium
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Upper limit for magnetoresistance in silicon bronze and phosphor bronze wire
The electrical resistivity of silicon bronze and phosphor bronze was measured in magnetic fields from 0 to 14 T and at temperatures between 2 and 300 K. At any fixed temperature, the change in resistivity to 14 T was less than a few parts in 100,000. Thus, these bronzes are excellent for use in high magnetic fields where constant resistance is required. Welding leads to the sample was found to be superior to soldering. The soldered contacts were subject to spurious resistivity changes that resulted from superconducting transitions in the solder.
Ultra-dense magnetoresistive mass memory
This report details the progress and accomplishments of Nonvolatile Electronics (NVE), Inc., on the design of the wafer scale MRAM mass memory system during the fifth quarter of the project. NVE has made significant progress this quarter on the one megabit design in several different areas. A test chip, which will verify a working GMR bit with the dimensions required by the 1 Meg chip, has been designed, laid out, and is currently being processed in the NVE labs. This test chip will allow electrical specifications, tolerances, and processing issues to be finalized before construction of the actual chip, thus providing a greater assurance of success of the final 1 Meg design. A model has been developed to accurately simulate the parasitic effects of unselected sense lines. This model gives NVE the ability to perform accurate simulations of the array electronic and test different design concepts. Much of the circuit design for the 1 Meg chip has been completed and simulated and these designs are included. Progress has been made in the wafer scale design area to verify the reliable operation of the 16 K macrocell. This is currently being accomplished with the design and construction of two stand alone test systems which will perform life tests and gather data on reliabiliy and wearout mechanisms for analysis.
Deep Flaw Detection with Giant Magnetoresistive (GMR) Based Self-Nulling Probe
In this paper a design modification to the Very-Low Frequency GMR Based Self-Nulling Probe has been presented to enable improved signal to noise ratio for deeply buried flaws. The design change consists of incorporating a feedback coil in the center of the flux focusing lens. The use of the feedback coil enables cancellation of the leakage fields in the center of the probe and biasing of the GMR sensor to a location of high magnetic field sensitivity. The effect of the feedback on the probe output was examined, and experimental results for deep flaw detection were presented. The experimental results show that the modified probe is capable of clearly identifying flaws up to 1 cm deep in aluminum alloy structures.
Tunneling Evidence of Half-Metallic Ferromagnetism in the Colossal Magnetoresistive La(0.7)Ca(0.3)MnO(3) and La(0.7)Sr(0.3)Mn0(3) Films
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Effects of Lattice Distortion and Mixed Valences on the Magnetic and Electrical Transport Properties of Magnetoresistive Manganites with A- and B- Site Doping
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